ST93003 [STMICROELECTRONICS]
HIGH VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR; 高压快速开关PNP功率晶体管
| 型号： | ST93003 |
| 厂家： | 
ST |
| 描述： | HIGH VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR |
| 文件： | 总7页 (文件大小：257K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ST93003
®
HIGH VOLTAGE FAST-SWITCHING
PNP POWER TRANSISTOR
■
■
■
MEDIUM VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
■
VERY HIGH SWITCHING SPEED
APPLICATIONS:
■
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
1
2
3
DESCRIPTION
The device is manufactured using high voltage
Multi-Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
SOT-32
The ST93003 is expressly designed for a new
solution to be used in compact fluorescent lamps,
where it is coupled with the ST83003, its
complementary NPN transistor.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
Parameter
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Value
-500
Unit
V
V
V
VCEO
-400
VEBO
Emitter-Base Voltage
V(BR)EBO
(IC = 0, IB = -0.75 A, tp < 10µs, Tj < 150oC)
Collector Current
IC
ICM
IB
-1.5
-3
A
A
Collector Peak Current (tp < 5 ms)
Base Current
-0.75
-1.5
A
IBM
Ptot
Tstg
Tj
Base Peak Current (tp < 5 ms)
A
o
Total Dissipation at Tc = 25 C
40
W
oC
oC
Storage Temperature
-65 to 150
150
Max. Operating Junction Temperature
1/7
October 2002
ST93003
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
3.12
89
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off
Current (VBE = 0)
VCE = -500V
VCE = -500V
-1
-5
mA
mA
Tj = 125oC
V(BR)EBO Emitter Base
Breakdown Voltage
IE = -10 mA
-5
-10
V
(IC = 0)
VCEO(sus) Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = -10 mA
L = 25 mH
-400
V
VCE(sat)
VBE(sat)
hFE
Collector-Emitter
Saturation Voltage
IC = -0.5 A
IC = -0.35 A
IB = -0.1 A
IB = -50 mA
-0.5
-0.5
V
V
Base-Emitter
Saturation Voltage
IC = -0.5 A
IB = -0.1 A
-1
V
DC Current Gain
IC = -10 mA
IC = -0.35 A
IC = -1 A
VCE = -5 V
VCE = -5 V
VCE = -5 V
10
16
4
25
32
RESISTIVE LOAD
Rise Time
Storage Time
Fall Time
tr
ts
tf
IC = -0.35 A
IB1 = -70 mA
Tp ≥ 25 µs
VCC = 125 V
IB2 = 70 mA
(see Figure 2)
90
2.2
0.1
ns
µs
µs
1.5
12
2.9
INDUCTIVE LOAD
Storage Time
Fall Time
IC = -0.5 A
VBE(off) = 5 V
Vclamp = 300 V
IB1 = -0.1 A
L = 10 mH
(see Figure 1)
ts
tf
400
40
ns
ns
Esb
Avalanche Energy
L = 4 mH
IBR ≤ 2.5 A
C = 1.8 nF
mJ
25oC < TC < 125oC
Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %
2/7
ST93003
Safe Operating Area
Derating Curve
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
3/7
ST93003
Resistive Fall Time
Resistive Storage Time
Inductive Fall Time
Inductive Storage Time
Reverse Biased SOA
4/7
ST93003
Figure 1: Inductive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
Figure 2: Resistive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
5/7
ST93003
SOT-32 (TO-126) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
7.4
TYP.
MAX.
7.8
MIN.
0.291
0.413
0.028
0.015
0.094
0.039
0.606
MAX.
0.307
0.425
0.035
0.025
0.106
0.051
0.630
A
B
10.5
0.7
10.8
0.9
b
b1
C
c1
D
e
0.40
2.4
0.65
2.7
1.0
1.3
15.4
16.0
2.2
4.4
3.8
0.087
0.173
0.150
e3
F
G
H
H2
I
3
3.2
0.118
0.126
0.100
2.54
2.15
1.27
0.3
0.084
0.05
0.011
10o
O
V
10o
1: Base
2: Collector
3: Emitter
0016114/B
6/7
ST93003
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2002 STMicroelectronics – Printed in Italy – All Rights Reserved
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