STB10NK60Z-1 [STMICROELECTRONICS]
N-CHANNEL 600V-0.65ohm-10A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET; N沟道600V - 0.65ohm -10A TO- 220 / FP / D2PAK / I2PAK / TO- 247齐纳保护SuperMESH⑩Power MOSFET
| 型号： | STB10NK60Z-1 |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 600V-0.65ohm-10A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET |
| 文件： | 总14页 (文件大小：685K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP10NK60Z/FP, STB10NK60Z/-1
STW10NK60Z
N-CHANNEL 600V-0.65Ω-10A TO-220/FP/D2PAK/I2PAK/TO-247
Zener-Protected SuperMESH™Power MOSFET
TYPE
V
R
I
D
Pw
DSS
DS(on)
STP10NK60Z
STP10NK60ZFP
STB10NK60Z
STB10NK60Z-1
STW10NK60Z
600 V < 0.75 Ω 10 A
600 V < 0.75 Ω 10 A
600 V < 0.75 Ω 10 A
600 V < 0.75 Ω 10 A
600 V < 0.75 Ω 10 A
115 W
35 W
115 W
115 W
156 W
3
2
1
TO-220
TO-220FP
■
■
■
■
■
■
TYPICAL R (on) = 0.65 Ω
DS
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEATIBILITY
3
1
3
3
2
2
1
2
D PAK
1
2
I PAK
TO-247
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
■
■
LIGHTING
ORDERING INFORMATION
SALES TYPE
MARKING
P10NK60Z
P10NK60ZFP
B10NK60Z
PACKAGE
PACKAGING
TUBE
STP10NK60Z
STP10NK60ZFP
STB10NK60ZT4
TO-220
TO-220FP
TUBE
2
TAPE & REEL
D PAK
2
STB10NK60Z-1
STW10NK60Z
B10NK60Z
W10NK60Z
TUBE
TUBE
I PAK
TO-247
July 2003
1/14
STP10NK60Z-STP10NK60ZFP, STB10NK60Z, STB10NK60Z-1, STW10NK60Z
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
TO-220FP
Unit
TO-220/
TO-247
2
2
D PAK/I PAK
V
Drain-source Voltage (V = 0)
600
600
± 30
V
V
DS
GS
V
Drain-gate Voltage (R = 20 kΩ)
DGR
GS
V
Gate- source Voltage
V
GS
I
Drain Current (continuous) at T = 25°C
10
5.7
36
10 (*)
10
5.7
36
A
D
D
C
I
Drain Current (continuous) at T = 100°C
5.7 (*)
36 (*)
35
A
C
I
( )
Drain Current (pulsed)
A
DM
P
Total Dissipation at T = 25°C
115
0.92
156
1.25
W
W/°C
V
TOT
C
Derating Factor
0.28
V
Gate source ESD
4000
ESD(G-S)
(HBM-C=100pF, R=1.5KΩ)
dv/dt (1)
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
4.5
2500
V/ns
V
V
-
-
ISO
T
T
stg
Operating Junction Temperature
Storage Temperature
j
-55 to 150
°C
( ) Pulse width limited by safe operating area
(1) I ≤10A, di/dt ≤200A/µs, V ≤ V
, T ≤ T
j JMAX.
SD
DD
(BR)DSS
(*) Limited only by maximum temperature allowed
THERMAL DATA
TO-220
2
TO-220FP
TO-247
Unit
D PAK
2
I PAK
Rthj-case
Rthj-pcb
Thermal Resistance Junction-case Max
1.09
3.6
0.8
°C/W
°C/W
Thermal Resistance Junction-pcb Max
(When mounted on minimum Footprint)
60
Rthj-amb
Thermal Resistance Junction-ambient
Max
62.5
50
°C/W
°C
T
Maximum Lead Temperature For
Soldering Purpose
300
l
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
9
A
(pulse width limited by T max)
j
E
E
Single Pulse Avalanche Energy
300
3.5
mJ
mJ
AS
(starting T = 25 °C, I = I , V = 50 V)
j
D
AR
DD
Repetitive Avalanche Energy
(Pulse with limited by T max.)
AR
j
GATE-SOURCE ZENER DIODE
Symbol
BV
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Gate-Source Breakdown
Voltage
Igs=± 1mA (Open Drain)
30
V
GSO
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid
the usage of external components.
2/14
STP10NK60Z-STP10NK60ZFP, STB10NK60Z, STB10NK60Z-1, STW10NK60Z
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
ON/OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
V
I
= 1 mA, V = 0
600
V
(BR)DSS
D
GS
Breakdown Voltage
I
Zero Gate Voltage
V
V
= Max Rating
= Max Rating, T = 125 °C
1
50
µA
µA
DSS
DS
DS
Drain Current (V = 0)
GS
C
I
Gate-body Leakage
V
= ± 20V
±10
µA
GSS
GS
Current (V = 0)
DS
V
V
V
= V , I = 100µA
Gate Threshold Voltage
3
3.75
0.65
4.5
V
GS(th)
DS
GS
GS
D
R
Static Drain-source On
Resistance
= 10V, I = 4.5 A
0.75
Ω
DS(on)
D
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
(1)
Forward Transconductance
V
V
= 15 V I = 4.5 A
7.8
S
fs
DS
, D
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
= 25V, f = 1 MHz, V = 0
1370
156
37
pF
pF
pF
iss
DS
GS
oss
rss
C
(3) Equivalent Output
Capacitance
= 0V, V = 0V to 480V
90
pF
oss eq.
GS
DS
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
Turn-on Delay Time
Rise Time
V
R
= 300 V, I = 4 A
= 4.7Ω V = 10 V
GS
20
20
ns
ns
d(on)
DD
D
t
r
G
(Resistive Load see, Figure 3)
Q
Q
Q
V
V
= 480V, I = 8 A,
= 10V
70
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
50
10
25
nC
nC
nC
g
DD
GS
D
gs
gd
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
Turn-off Delay Time
Fall Time
V
= 300 V, I = 4 A
55
30
ns
ns
d(off)
DD
D
t
f
R = 4.7Ω V = 10 V
G GS
(Resistive Load see, Figure 3)
t
V
R
= 480V, I = 8 A,
ns
ns
ns
Off-voltage Rise Time
Fall Time
Cross-over Time
18
18
36
r(Voff)
DD
D
t
f
= 4.7Ω, V = 10V
G
GS
t
c
(Inductive Load see, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
10
36
A
A
Source-drain Current
Source-drain Current (pulsed)
SD
(2)
I
SDM
V
(1)
I
I
= 10 A, V = 0
Forward On Voltage
1.6
V
SD
SD
SD
GS
t
= 8 A, di/dt = 100A/µs
= 40V, T = 150°C
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
570
4.3
15
ns
µC
A
rr
Q
V
DD
rr
RRM
j
I
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
V
is defined as a constant equivalent capacitance giving the same charging time as C
when V increases from 0 to 80%
oss DS
oss eq.
.
DSS
3/14
STP10NK60Z-STP10NK60ZFP, STB10NK60Z, STB10NK60Z-1, STW10NK60Z
Safe Operating Area For TO-220/D2PAK/I2PAK
Thermal Impedance For TO-220/D2PAK/I2PAK
Safe Operating Area For TO-220FP
Thermal Impedance For TO-220FP
Safe Operating Area For TO-247
Thermal Impedance For TO-247
4/14
STP10NK60Z-STP10NK60ZFP, STB10NK60Z, STB10NK60Z-1, STW10NK60Z
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
5/14
STP10NK60Z-STP10NK60ZFP, STB10NK60Z, STB10NK60Z-1, STW10NK60Z
Normalized Gate Threshold Voltage vs Temp.
Source-drain Diode Forward Characteristics
Maximum Avalanche Energy vs Temperature
Normalized On Resistance vs Temperature
Normalized BVDSS vs Temperature
6/14
STP10NK60Z-STP10NK60ZFP, STB10NK60Z, STB10NK60Z-1, STW10NK60Z
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
7/14
STP10NK60Z-STP10NK60ZFP, STB10NK60Z, STB10NK60Z-1, STW10NK60Z
TO-220 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
MAX.
0.181
0.051
0.107
A
C
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
L2
Dia.
L5
L9
L7
L6
L4
P011C
8/14
STP10NK60Z-STP10NK60ZFP, STB10NK60Z, STB10NK60Z-1, STW10NK60Z
TO-220FP MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.4
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.5
1.5
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L5
L6
L7
Ø
16
0.630
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
1.126
.0385
0.114
0.626
0.354
0.118
1.204
0.417
0.141
0.645
0.366
0.126
16.4
9.3
3
3.2
L3
L6
L7
1 2 3
L4
L5
L2
9/14
STP10NK60Z-STP10NK60ZFP, STB10NK60Z, STB10NK60Z-1, STW10NK60Z
D2PAK MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.4
MAX.
4.6
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
A
A1
A2
B
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
10.4
0.393
E1
G
8.5
4.88
15
5.28
15.85
1.4
0.192
0.590
0.050
0.055
0.094
0.208
0.625
0.055
0.068
0.126
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
R
0.4
0.015
V2
0º
8º
3
10/14
1
STP10NK60Z-STP10NK60ZFP, STB10NK60Z, STB10NK60Z-1, STW10NK60Z
2
TO-262 (I PAK) MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
10
MAX.
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
10.40
14
MIN.
0.173
0.094
0.024
0.044
0.019
0.048
0.352
0.094
0.194
0.393
0.511
0.137
0.050
MAX.
0.181
0.107
0.034
0.066
0.027
0.052
0.368
0.106
0.202
0.410
0.551
0.154
0.055
A
A1
b
b1
c
c2
D
e
e1
E
L
13
L1
L2
3.50
1.27
3.93
1.40
11/14
STP10NK60Z-STP10NK60ZFP, STB10NK60Z, STB10NK60Z-1, STW10NK60Z
TO-247 MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.85
2.20
1.0
MAX.
5.15
MIN.
0.19
MAX.
0.20
A
A1
b
2.60
0.086
0.039
0.079
0.118
0.015
0.781
0.608
0.102
0.055
0.094
0.134
0.03
1.40
b1
b2
c
2.0
2.40
3.0
3.40
0.40
19.85
15.45
0.80
D
20.15
15.75
0.793
0.620
E
e
5.45
18.50
5.50
0.214
0.728
0.216
L
14.20
3.70
14.80
4.30
0.560
0.14
0.582
0.17
L1
L2
øP
øR
S
3.55
4.50
3.65
5.50
0.140
0.177
0.143
0.216
12/14
STP10NK60Z-STP10NK60ZFP, STB10NK60Z, STB10NK60Z-1, STW10NK60Z
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
0.059
12.8
20.2
24.4
100
13.2 0.504 0.520
0795
26.4 0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6 0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449 0.456
5.0 0.189 0.197
4.1 0.153 0.161
12.1 0.468 0.476
2.1 0.075 0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
W
* on sales type
13/14
STP10NK60Z-STP10NK60ZFP, STB10NK60Z, STB10NK60Z-1, STW10NK60Z
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
© http://www.st.com
14/14
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