STB13005_07 [STMICROELECTRONICS]
High voltage fast-switching NPN power transistor; 高压快速开关NPN功率晶体管
| 型号： | STB13005_07 |
| 厂家： | 
ST |
| 描述： | High voltage fast-switching NPN power transistor |
| 文件： | 总11页 (文件大小：208K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STB13005
High voltage fast-switching
NPN power transistor
Features
■ Low spread of dynamic parameters
■ Minimum lot-to-lot spread for reliable operation
■ Very high switching speed
2
■ Through hole TO-262 (I PAK) power package
in tube (suffix “-1”)
3
2
1
Applications
I2PAK
■ Electronic ballast for fluorescent lighting
■ Switch mode power supplies
Description
Figure 1.
Internal schematic diagram
The device is manufactured using high voltage
multi-epitaxial planar technology for high
switching speeds and medium voltage capability.
It uses a cellular emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
Table 1.
Device summary
Marking (1)
Order code
Package
Packaging
B13005A
B13005B
I2PAK
STB13005-1
Tube
1. Product is pre-selected in DC current gain (group A and group B). STMicroelectronics reserves the right to ship either
groups according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.
October 2007
Rev 1
1/11
www.st.com
11
Contents
STB13005
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
4
5
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2/11
STB13005
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum rating
Parameter
Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage (IC = 0)
Collector current
Value
Unit
V
VCES
VCEO
VEBO
IC
700
400
9
V
V
4
A
ICM
IB
Collector peak current (tP < 5ms)
Base current
8
A
2
A
IBM
Ptot
Tstg
TJ
Base peak current (tP < 5ms)
Total dissipation at Tc = 25°C
Storage temperature
4
75
A
W
°C
°C
-65 to 150
150
Max. operating junction temperature
3/11
Electrical characteristics
STB13005
2
Electrical characteristics
(T
= 25°C unless otherwise specified)
case
Table 3.
Symbol
Electrical characteristics
Parameter
Test conditions
Min. Typ. Max. Unit
VCE =700 V
Collector cut-off current
(VBE = 0)
1
5
mA
mA
ICES
VCE =700 V TC = 125°C
Emitter cut-off current
(IC = 0)
IEBO
VEB = 9 V
1
mA
V
Collector-emitter
sustaining voltage
(1)
IC =10 mA
400
VCEO(sus)
(IB = 0)
IC = 1 A
_
IB = 0.2 A
IB = 0.5 A
IB = 1 A
0.5
0.6
1
V
V
V
Collector-emitter
saturation voltage
(1)
IC = 2 A _ _
IC = 4 A _ _
VCE(sat)
IC = 1 A
_
IB = 0.2 A
IB = 0.5 A
1.2
1.6
V
V
Base-emitter saturation
voltage
(1)
VBE(sat)
IC = 2 A _ _
IC = 1 A
_
VCE = 5 V
15
27
8
32
45
40
Group A
Group B
(1)(2)
DC current gain
hFE
IC = 2 A _ _ VCE = 5 V
IC = 2 A VCC = 125 V
Resistive load
Storage time
Fall time
ts
tf
IB1 = - IB2 = 0.4 A
1.5
3
µs
µs
0.2
tp = 30 µs
1. Pulsed duration = 300 ms, duty cycle £1.5%
2. Product is pre-selected in DC current gain (group A and group B). STMicroelectronics reserves the right to
ship either groups according to production availability. Please contact your nearest STMicroelectronics
sales office for delivery details.
4/11
STB13005
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 2.
Figure 4.
Figure 6.
Safe operating area
Figure 3.
Derating curve
DC current gain
Figure 5.
DC current gain
Collector-emitter saturation Figure 7.
voltage
Base-emitter saturation
voltage
5/11
Electrical characteristics
Figure 8.
STB13005
Inductive load fall time
Figure 9.
Inductive load storage time
Figure 10. Resistive load fall time
Figure 11. Resistive load storage time
Figure 12. Reverse biased operating
area
6/11
STB13005
Test circuit
3
Test circuit
Figure 13. Inductive load switching test circuit
1) Fast electronic switch
2) Non-inductive resistor
3) Fast recovery rectifier
Figure 14. Resistive load switching test circuit
1) Fast electronic switch
2) Non-inductive resistor
7/11
Package mechanical data
STB13005
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
8/11
STB13005
Package mechanical data
2
TO-262 (I PAK) MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
10
MAX.
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
10.40
14
MIN.
0.173
0.094
0.024
0.044
0.019
0.048
0.352
0.094
0.194
0.393
0.511
0.137
0.050
MAX.
0.181
0.107
0.034
0.066
0.027
0.052
0.368
0.106
0.202
0.410
0.551
0.154
0.055
A
A1
b
b1
c
c2
D
e
e1
E
L
13
L1
L2
3.50
1.27
3.93
1.40
9/11
Revision history
STB13005
5
Revision history
Table 4.
Date
11-Oct-2007
Document revision history
Revision
Changes
6
Initial release
10/11
STB13005
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