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STB18N65M5 [STMICROELECTRONICS]

N-channel 650 V, 0.198 Ω typ., 15 A MDmesh™ V Power MOSFET in D²PAK and DPAK packages; N沟道650 V， 0.198 I© （典型值） ， 15 A MDmeshâ ?? ¢在D²PAK和DPAK封装V功率MOSFET
STB18N65M5
型号： STB18N65M5
厂家： ST    ST
描述：

N-channel 650 V, 0.198 Ω typ., 15 A MDmesh™ V Power MOSFET in D²PAK and DPAK packages
N沟道650 V， 0.198 I© （典型值） ， 15 A MDmeshâ ?? ¢在D²PAK和DPAK封装V功率MOSFET
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STB18N65M5, STD18N65M5  
N-channel 650 V, 0.198 Ω typ., 15 A MDmesh™ V Power MOSFET  
in D²PAK and DPAK packages  
Datasheet — production data  
Features  
VDSS  
TJmax  
@
RDS(on)  
max  
Order codes  
ID  
TAB  
TAB  
STB18N65M5  
STD18N65M5  
710 V  
< 0.22 Ω  
15 A  
2
1
2
3
3
1
D2PAK  
DPAK  
■ Worldwide best RDS(on) * area  
■ Higher VDSS rating and high dv/dt capability  
■ Excellent switching performance  
■ 100% avalanche tested  
Figure 1.  
Internal schematic diagram  
Applications  
■ Switching applications  
$ꢅꢆꢇ 4!"ꢈ  
Description  
These devices are N-channel MDmesh™ V  
Power MOSFETs based on an innovative  
proprietary vertical process technology, which is  
combined with STMicroelectronics’ well-known  
PowerMESH™ horizontal layout structure. The  
resulting product has extremely low on-  
'ꢅꢁꢈ  
3ꢅꢉꢈ  
resistance, which is unmatched among silicon-  
based Power MOSFETs, making it especially  
suitable for applications which require superior  
power density and outstanding efficiency.  
!-ꢀꢁꢂꢃꢄVꢁ  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
Tape and reel  
STB18N65M5  
STD18N65M5  
D2PAK  
DPAK  
18N65M5  
July 2012  
Doc ID 023446 Rev 1  
1/18  
This is information on a product in full production.  
www.st.com  
18  
Contents  
STB18N65M5, STD18N65M5  
Contents  
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
2.1  
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
3
4
5
6
Test circuits  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17  
2/18  
Doc ID 023446 Rev 1  
STB18N65M5, STD18N65M5  
Electrical ratings  
1
Electrical ratings  
Table 2.  
Symbol  
Absolute maximum ratings  
Parameter  
Value  
Unit  
D2PAK  
DPAK  
VGS  
ID  
Gate-source voltage  
25  
15  
V
A
Drain current (continuous) at TC = 25 °C  
Drain current (continuous) at TC = 100 °C  
Drain current (pulsed)  
ID  
9.4  
60  
A
(1)  
IDM  
A
PTOT  
Total dissipation at TC = 25 °C  
110  
15  
W
dv/dt (1) Peak diode recovery voltage slope  
V/ns  
Tstg  
Tj  
Storage temperature  
- 55 to 150  
150  
°C  
°C  
Max. operating junction temperature  
1.  
I
≤ 15 A, di/dt ≤400 A/µs; V  
< V  
, V = 400 V  
SD  
DSPeak  
(BR)DSS DD  
Table 3.  
Symbol  
Thermal data  
Parameter  
Value  
Unit  
D2PAK  
DPAK  
Rthj-case Thermal resistance junction-case max  
1.14  
°C/W  
°C/W  
(1)  
Rthj-pcb  
Thermal resistance junction-pcb max  
30  
50  
1. When mounted on 1 inch² FR-4, 2 Oz copper board.  
Table 4.  
Symbol  
Avalanche characteristics  
Parameter  
Value  
Unit  
Avalanche current, repetetive or not repetetive  
IAR  
4
A
(pulse width limited by Tjmax  
)
Single pulse avalanche energy  
EAS  
210  
mJ  
(starting TJ = 25 °C, ID= IAR; VDD=50 V)  
Doc ID 023446 Rev 1  
3/18  
Electrical characteristics  
STB18N65M5, STD18N65M5  
2
Electrical characteristics  
(TC = 25 °C unless otherwise specified)  
Table 5.  
Symbol  
On /off states  
Parameter  
Test conditions  
ID = 1 mA, VGS = 0  
VDS = 650 V  
Min.  
Typ.  
Max. Unit  
Drain-source  
breakdown voltage  
V(BR)DSS  
650  
V
Zero gate voltage  
1
µA  
µA  
IDSS  
drain current (VGS = 0) VDS = 650 V, TC=125 °C  
100  
Gate-body leakage  
IGSS  
VGS  
=
25 V  
100 nA  
current (VDS = 0)  
VGS(th)  
RDS(on)  
Gate threshold voltage VDS = VGS, ID = 250 µA  
Static drain-source on-  
3
4
5
V
V
GS = 10 V, ID = 7.5 A  
0.198  
0.22  
Ω
resistance  
Table 6.  
Symbol  
Dynamic  
Parameter  
Test conditions  
Min.  
Typ.  
Max. Unit  
Input capacitance  
Output capacitance  
Ciss  
Coss  
Crss  
1240  
32  
pF  
V
DS = 100 V, f = 1 MHz,  
GS = 0  
-
-
-
pF  
pF  
V
Reverse transfer  
capacitance  
3.2  
Equivalent  
capacitance time  
related  
(1)  
Co(tr)  
-
99  
pF  
VDS = 0 to 520 V, VGS = 0  
f = 1 MHz open drain  
Equivalent  
capacitance energy  
related  
(2)  
Co(er)  
-
-
30  
3
-
-
pF  
Intrinsic gate  
resistance  
RG  
Ω
Qg  
Qgs  
Qgd  
Total gate charge  
Gate-source charge  
Gate-drain charge  
VDD = 520 V, ID = 7.5 A,  
VGS = 10 V  
31  
8
nC  
nC  
nC  
-
-
(see Figure 18)  
14  
1. Time related is defined as a constant equivalent capacitance giving the same charging time as C  
when  
oss  
V
increases from 0 to 80% V  
DSS  
DS  
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as C  
oss  
when V increases from 0 to 80% V  
DS  
DSS  
4/18  
Doc ID 023446 Rev 1  
STB18N65M5, STD18N65M5  
Electrical characteristics  
Table 7.  
Symbol  
Switching times  
Parameter  
Test conditions  
Min. Typ.  
Max Unit  
td (V)  
tr (V)  
tf(i)  
Voltage delay time  
Voltage rise time  
Current fall time  
Crossing time  
36  
ns  
VDD = 400 V, ID = 9.5 A,  
7
ns  
RG = 4.7 Ω, VGS = 10 V  
(see Figure 19 and  
Figure 22)  
-
-
9
ns  
tc(off)  
11  
ns  
Table 8.  
Symbol  
Source drain diode  
Parameter  
Test conditions  
Min. Typ. Max. Unit  
ISD  
Source-drain current  
15  
60  
A
A
-
-
(1)  
ISDM  
Source-drain current (pulsed)  
(2)  
VSD  
Forward on voltage  
ISD = 15 A, VGS = 0  
1.5  
V
trr  
Reverse recovery time  
Reverse recovery charge  
Reverse recovery current  
290  
3.4  
ns  
µC  
A
ISD = 15 A, di/dt = 100 A/µs  
Qrr  
-
-
VDD = 100 V (see Figure 22)  
IRRM  
23.5  
trr  
Reverse recovery time  
Reverse recovery charge  
Reverse recovery current  
ISD = 15 A, di/dt = 100 A/µs  
DD = 100 V, Tj = 150 °C  
(see Figure 22)  
352  
4
ns  
µC  
A
Qrr  
V
IRRM  
24  
1. Pulse width limited by safe operating area.  
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%  
Doc ID 023446 Rev 1  
5/18  
Electrical characteristics  
STB18N65M5, STD18N65M5  
Thermal impedance for D2PAK  
2.1  
Electrical characteristics (curves)  
Figure 2.  
Safe operating area for D2PAK  
Figure 3.  
Figure 5.  
Figure 7.  
AM12487v1  
I
D
(A)  
10  
10µs  
100µs  
1ms  
1
Tj=150°C  
Tc=25°C  
10ms  
Single  
pulse  
0.1  
10  
VDS(V)  
0.1  
1
100  
Figure 4.  
Safe operating area for DPAK  
Thermal impedance for DPAK  
AM124871v1  
I
D
(A)  
10µs  
10  
100µs  
1
Tj=150°C  
Tc=25°C  
1ms  
10ms  
Single  
pulse  
0.1  
10  
VDS(V)  
0.1  
1
100  
Figure 6.  
Output characteristics  
Transfer characteristics  
AM12472v1  
AM12486v1  
I
D
(A)  
I
D
(A)  
V
= 9, 10 V  
GS  
35  
35  
30  
25  
20  
15  
10  
V
= 25 V  
DS  
30  
V
= 8 V  
GS  
25  
20  
15  
V
= 7 V  
GS  
10  
5
V
= 6 V  
GS  
5
0
0
5
20  
7
8
9
V
15  
3
5
6
10  
4
V
DS(V)  
GS(V)  
0
6/18  
Doc ID 023446 Rev 1  
STB18N65M5, STD18N65M5  
Electrical characteristics  
Figure 8.  
Gate charge vs gate-source voltage Figure 9.  
Static drain-source on-resistance  
AM12474v1  
DS  
AM12475v1  
V
(V)  
GS  
R
DS(on)  
(Ω)  
0.24  
0.23  
0.22  
V
V
DD=520V  
=7.5A  
(V)  
12  
V
GS=10V  
500  
I
D
VDS  
10  
400  
300  
200  
8
6
4
0.21  
0.2  
0.19  
0.18  
100  
0
2
0
0.17  
0.16  
30  
10  
20 25  
Q
g(nC)  
2
ID(A)  
10 12 14  
0
5
15  
0
6
8
4
Figure 10. Capacitance variations  
Figure 11. Output capacitance stored energy  
AM12476v1  
AM12484v1  
C
Eoss  
(pF)  
(µJ)  
6
10000  
1000  
5
Ciss  
4
3
2
100  
Coss  
Crss  
10  
1
1
0
0.1  
100  
200  
400  
1
10  
V
DS(V)  
0
600  
VDS(V)  
Figure 12. Normalized gate threshold voltage Figure 13. Normalized on-resistance vs  
vs temperature temperature  
AM12471v1  
AM12483v1  
V
GS(th)  
R
DS(on)  
(norm)  
(norm)  
1.10  
2.1  
I
= 250 µA  
D
V
= 10V  
GS  
I = 7.5 A  
1.9  
1.7  
1.5  
1.3  
1.1  
V
= V  
DS  
GS  
D
1.00  
0.90  
0.80  
0.9  
0.7  
0.5  
-50  
-25  
0.70  
-50  
-25  
0
25 50 75  
TJ(°C)  
0
25 50 75  
TJ(°C)  
100  
100  
Doc ID 023446 Rev 1  
7/18  
Electrical characteristics  
STB18N65M5, STD18N65M5  
Figure 14. Drain-source diode forward  
characteristics  
Figure 15. Normalized BVDSS vs temperature  
AM05461v1  
AM10399v1  
V
(V)  
SD  
VDS  
(norm)  
TJ=-50°C  
1.08  
1.2  
ID = 1mA  
1.06  
1.04  
1.02  
1.00  
1.0  
0.8  
0.6  
TJ=25°C  
TJ=150°C  
0.98  
0.4  
0.2  
0.96  
0.94  
0.92  
0
0
-50  
-25  
10  
20  
30  
40  
50 ISD(A)  
0
25 50 75  
TJ(°C)  
100  
Figure 16. Switching losses vs gate resistance  
(1)  
AM12485v1  
E
(μJ)  
VDD=400V  
VGS=10V  
ID=9.5A  
160  
140  
120  
100  
80  
Eon  
60  
Eoff  
40  
20  
0
20  
30  
40  
10  
RG(Ω)  
0
1. Eon including reverse recovery of a SiC diode  
8/18  
Doc ID 023446 Rev 1  
STB18N65M5, STD18N65M5  
Test circuits  
3
Test circuits  
Figure 17. Switching times test circuit for  
resistive load  
Figure 18. Gate charge test circuit  
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6'  
6$  
2'  
6'3  
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ꢆꢌꢃK  
ꢂꢃK  
07  
ꢁK  
07  
!-ꢀꢁꢂꢊꢋVꢁ  
!-ꢀꢁꢂꢊꢍVꢁ  
Figure 19. Test circuit for inductive load  
switching and diode recovery times  
Figure 20. Unclamped inductive load test  
circuit  
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Figure 21. Unclamped inductive waveform  
Figure 22. Switching time waveform  
Concept waveform for Inductive Load Turn-off  
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Id  
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90%Id  
Tdelay-off  
)$-  
Vgs  
90%Vgs  
10%Vds  
on  
)$  
Vgs(I(t))  
6$$  
6$$  
10%Id  
Vds  
Trise  
Tfall  
Tcross -over  
!-ꢀꢁꢂꢃꢆVꢁ  
AM05540v2  
Doc ID 023446 Rev 1  
9/18  
Package mechanical data  
STB18N65M5, STD18N65M5  
4
Package mechanical data  
In order to meet environmental requirements, ST offers these devices in different grades of  
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®  
specifications, grade definitions and product status are available at: www.st.com. ECOPACK  
is an ST trademark.  
Table 9.  
Dim.  
D²PAK (TO-263) mechanical data  
mm  
Min.  
Typ.  
Max.  
A
A1  
b
4.40  
0.03  
0.70  
1.14  
0.45  
1.23  
8.95  
7.50  
10  
4.60  
0.23  
0.93  
1.70  
0.60  
1.36  
9.35  
b2  
c
c2  
D
D1  
E
10.40  
E1  
e
8.50  
2.54  
e1  
H
4.88  
15  
5.28  
15.85  
2.69  
2.79  
1.40  
1.75  
J1  
L
2.49  
2.29  
1.27  
1.30  
L1  
L2  
R
0.4  
V2  
0°  
8°  
10/18  
Doc ID 023446 Rev 1  
STB18N65M5, STD18N65M5  
Figure 23. D²PAK (TO-263) drawing  
Package mechanical data  
0079457_T  
Figure 24. D²PAK footprint(a)  
16.90  
12.20  
5.08  
1.60  
3.50  
9.75  
Footprint  
a. All dimensions are in millimeters  
Doc ID 023446 Rev 1  
11/18  
Package mechanical data  
STB18N65M5, STD18N65M5  
Table 10. DPAK (TO-252) mechanical data  
mm  
Dim.  
Min.  
Typ.  
Max.  
A
A1  
A2  
b
2.20  
0.90  
0.03  
0.64  
5.20  
0.45  
0.48  
6.00  
2.40  
1.10  
0.23  
0.90  
5.40  
0.60  
0.60  
6.20  
b4  
c
c2  
D
D1  
E
5.10  
6.40  
6.60  
E1  
e
4.70  
2.28  
e1  
H
4.40  
9.35  
1
4.60  
10.10  
1.50  
L
L1  
L2  
L4  
R
2.80  
0.80  
0.60  
0°  
1
0.20  
V2  
8°  
12/18  
Doc ID 023446 Rev 1  
STB18N65M5, STD18N65M5  
Figure 25. DPAK (TO-252) drawing  
Package mechanical data  
0068772_I  
Figure 26. DPAK footprint(b)  
6.7  
3
1.8  
1.6  
2.3  
2.3  
6.7  
1.6  
AM08850v1  
b. All dimensions are in millimeters  
Doc ID 023446 Rev 1  
13/18  
Packaging mechanical data  
STB18N65M5, STD18N65M5  
5
Packaging mechanical data  
Table 11. DPAK (TO-252) tape and reel mechanical data  
Tape  
Reel  
mm  
mm  
Dim.  
Dim.  
Min.  
Max.  
Min.  
Max.  
A0  
B0  
B1  
D
6.8  
7
A
B
C
D
G
N
T
330  
10.4  
10.6  
12.1  
1.6  
1.5  
12.8  
20.2  
16.4  
50  
13.2  
18.4  
22.4  
1.5  
1.5  
D1  
E
1.65  
7.4  
1.85  
7.6  
F
K0  
P0  
P1  
P2  
R
2.55  
3.9  
2.75  
4.1  
Base qty.  
Bulk qty.  
2500  
2500  
7.9  
8.1  
1.9  
2.1  
40  
T
0.25  
15.7  
0.35  
16.3  
W
Table 12. D²PAK (TO-263) tape and reel mechanical data  
Tape  
Reel  
mm  
mm  
Dim.  
Dim.  
Min.  
Max.  
Min.  
Max.  
A0  
B0  
D
10.5  
15.7  
1.5  
10.7  
15.9  
1.6  
A
B
C
D
G
N
T
330  
1.5  
12.8  
20.2  
24.4  
100  
13.2  
26.4  
30.4  
D1  
E
1.59  
1.65  
11.4  
4.8  
1.61  
1.85  
11.6  
5.0  
F
K0  
P0  
P1  
P2  
3.9  
4.1  
11.9  
1.9  
12.1  
2.1  
Base qty  
Bulk qty  
1000  
1000  
14/18  
Doc ID 023446 Rev 1  
STB18N65M5, STD18N65M5  
Packaging mechanical data  
Table 12. D²PAK (TO-263) tape and reel mechanical data (continued)  
Tape Reel  
mm  
mm  
Dim.  
Dim.  
Min.  
Max.  
Min.  
Max.  
R
T
50  
0.25  
23.7  
0.35  
24.3  
W
Figure 27. Tape for D²PAK (TO-263) and DPAK (TO-252)  
10 pitches cumulative  
tolerance on tape +/- 0.2 mm  
P0  
P2  
Top cover  
D
T
tape  
E
F
W
K0  
B0  
A0  
D1  
P1  
User direction of feed  
R
Bending radius  
User direction of feed  
AM08852v2  
Doc ID 023446 Rev 1  
15/18  
Packaging mechanical data  
Figure 28. Reel for D²PAK (TO-263) and DPAK (TO-252)  
STB18N65M5, STD18N65M5  
T
REEL DIMENSIONS  
40mm min.  
Access hole  
At sl ot location  
B
D
C
N
A
G measured at hub  
Full radius  
Tape slot  
in core for  
tape start 25 mm min.  
width  
AM08851v2  
16/18  
Doc ID 023446 Rev 1  
STB18N65M5, STD18N65M5  
Revision history  
6
Revision history  
Table 13. Document revision history  
Date  
Revision  
Changes  
18-Jul-2012  
1
First release.  
Doc ID 023446 Rev 1  
17/18  
STB18N65M5, STD18N65M5  
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Doc ID 023446 Rev 1  

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