STB3NA80 [STMICROELECTRONICS]
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR; N - 沟道增强模式快速功率MOS晶体管
| 型号： | STB3NA80 |
| 厂家： | 
ST |
| 描述： | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| 文件： | 总10页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STB3NA80
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE
VDSS
RDS(on )
< 4.5 Ω
ID
STB3NA80
800 V
3.1 A
n
n
n
n
n
n
n
n
TYPICAL RDS(on) = 3.5 Ω
± 30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100oC
LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
3
3
2
REDUCED THRESHOLD VOLTAGE SPREAD
THROUGH-HOLE I2PAK (TO-262) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
SURFACE-MOUNTING D2PACK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX)
OR IN TAPE & REEL (SUFFIX ”T4”)
1
1
I2PAK
TO-262
D2PAK
TO-263
n
APPLICATIONS
n
n
n
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
Parameter
Value
800
Unit
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
V
V
VDGR
VGS
ID
800
± 30
3.1
V
A
ID
2
A
I
DM(• )
12.5
100
A
Ptot
Total Dissipation at Tc = 25 oC
W
Derating Factor
1.25
-65 to 150
150
W/oC
oC
oC
Tstg
Tj
Storage Temperature
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
1/10
October 1995
STB3NA80
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Rthc-sink Thermal Resistance Case-sink
Max
Max
Typ
0.8
62.5
0.5
oC/W
oC/W
oC/W
oC
Tl
Maximum Lead Temperature For Soldering Purpose
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
EAS
EAR
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
3.1
A
Single Pulse Avalanche Energy
48
2
mJ
mJ
A
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
2
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unlessotherwise specified)
OFF
Symbol
V(BR)DSS Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (VGS = 0) VDS = Max Rating x 0.8 Tc = 125 oC
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ID = 250 µA VGS = 0
800
V
IDSS
IGSS
VDS = Max Rating
250
1000
µA
µA
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
± 100
nA
ON ( )
Symbol
VGS(th)
Parameter
Test Conditions
Min.
Typ.
3
Max.
Unit
Gate Threshold Voltage VDS = VGS ID = 250 µA
2.25
3.75
V
RDS(on)
Static Drain-source On VGS = 10V ID = 1.5 A
Resistance
3.5
4.5
9
Ω
Ω
VGS = 10V ID = 1.5 A Tc = 100oC
ID(on)
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
3.1
A
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
Min.
Typ.
Max.
Unit
gfs ( )
VDS > ID(on) x RDS(on)max
ID = 1.5 A
1.5
3
S
Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V f = 1 MHz VGS = 0
730
85
20
950
115
30
pF
pF
pF
2/10
STB3NA80
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Turn-on Time
Rise Time
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
VDD = 400 V ID = 1.5 A
25
55
35
75
ns
ns
RG = 47 Ω
(see test circuit, figure 3)
(di/dt)on Turn-on Current Slope VDD = 640 V ID = 3 A
VGS = 10 V
180
A/µs
RG = 47 Ω
VGS = 10 V
(see test circuit, figure 5)
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 640 V ID = 3 A VGS = 10 V
35
6
15
50
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 640 V ID = 3 A
RG = 47 Ω VGS = 10 V
(see test circuit, figure 5)
50
15
75
70
25
100
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (• )
Source-drain Current
Source-drain Current
(pulsed)
3.1
12.5
A
A
VSD ( ) Forward On Voltage
ISD = 3.1 A VGS = 0
1.6
V
trr
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 3.1 A di/dt = 100 A/µs
VDD = 100 V
(see test circuit, figure 5)
700
9.5
27
ns
Tj = 150 oC
Qrr
µC
IRRM
A
( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse widthlimited by safe operating area
Safe Operating Area
Thermal Impedance
3/10
STB3NA80
Derating Curve
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
4/10
STB3NA80
CapacitanceVariations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Turn-on Current Slope
Turn-off Drain-source Voltage Slope
Cross-over Time
5/10
STB3NA80
Switching Safe Operating Area
Accidental Overload Area
Source-drain Diode Forward Characteristics
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
6/10
STB3NA80
Fig. 3: Switching Times Test Circuits For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And DIode Recovery Times
7/10
STB3NA80
TO-262 (I2PAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.3
TYP.
MAX.
4.6
MIN.
0.169
0.098
0.027
0.047
0.049
0.017
0.047
0.354
0.096
0.393
0.519
0.137
0.050
MAX.
0.181
0.106
0.036
0.054
0.055
0.023
0.053
0.368
0.104
0.404
0.531
0.149
0.054
A
A1
B
2.49
0.7
2.69
0.93
1.38
1.4
B1
B2
C
1.2
1.25
0.45
1.21
9
0.6
C2
D
1.36
9.35
2.64
10.28
13.5
3.78
1.37
e
2.44
10
E
L
13.2
3.48
1.27
L1
L2
L1
L2
D
L
8/10
STB3NA80
TO-263 (D2PAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.3
TYP.
MAX.
4.6
MIN.
0.169
0.098
0.027
0.049
0.017
0.047
0.354
0.393
0.192
0.590
0.050
0.055
MAX.
0.181
0.106
0.036
0.055
0.023
0.053
0.368
0.404
0.208
0.624
0.054
0.068
A
A1
B
2.49
0.7
2.69
0.93
1.4
B2
C
1.25
0.45
1.21
9
0.6
C2
D
1.36
9.35
10.28
5.28
15.85
1.37
1.75
E
10
G
4.88
15
L
L2
L3
1.27
1.4
E
A
C2
L2
D
L
L3
A1
B2
B
C
G
9/10
STB3NA80
Information furnished is believed to be accurateand reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such informationnor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publicationare subjectto change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenotauthorized for use as critical components in life supportdevices or systems withoutexpress
written approval of SGS-THOMSON Microelectonics.
1995 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore- Spain - Sweden - Switzerland- Taiwan - Thailand - United Kingdom - U.S.A
. . .
10/10
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