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STB80NE03L-06 [STMICROELECTRONICS]

N-CHANNEL 30V - 0.005ohm - 80A D2PAK / I2PAK STripFET⑩ POWER MOSFET; N沟道30V - 0.005ohm - 80A D2PAK / I2PAK STripFET⑩功率MOSFET
STB80NE03L-06
型号： STB80NE03L-06
厂家： ST    ST
描述：

N-CHANNEL 30V - 0.005ohm - 80A D2PAK / I2PAK STripFET⑩ POWER MOSFET
N沟道30V - 0.005ohm - 80A D2PAK / I2PAK STripFET⑩功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲
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STB80NE03L-06  
STB80NE03L-06-1  
2
2
N-CHANNEL 30V - 0.005Ω - 80A D PAK / I PAK  
STripFET™ POWER MOSFET  
TYPE  
V
R
I
D
DSS  
DS(on)  
STB80NE03L-06  
STB80NE03L-06-1  
30 V  
30 V  
< 0.006 Ω  
< 0.006 Ω  
80 A  
80 A  
■
■
■
■
TYPICAL R (on) = 0.005 Ω  
DS  
EXCEPTIONAL dv/dt CAPABILITY  
LOW GATE CHARGE 100°C  
100% AVALANCHE TESTED  
3
3
1
2
1
DESCRIPTION  
2
2
I PAK  
D PAK  
This Power MOSFET is the latest development of  
STMicroelectronics unique “Single Feature  
Size™” strip-based process. The resulting transis-  
tor shows extremely high packing density for low  
on-resistance, rugged avalanche characteristics  
and less critical alignment steps therefore a re-  
markable manufacturing reproducibility.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
■
■
■
■
■
HIGH CURRENT, HIGH SPEED SWITCHING  
SOLENOID AND RELAY DRIVERS  
MOTOR CONTROL,AUDIO AMPLIFIERS  
DC-DC & DC-AC CONVERTERS  
AUTOMOTIVE ENVIRONMENT (INJECTION,  
ABS, AIR-BAG, LAMPDRIVERS, Etc.)  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
30  
Unit  
V
DS  
Drain-source Voltage (V = 0)  
V
V
GS  
V
Drain-gate Voltage (R = 20 kΩ)  
30  
DGR  
GS  
V
Gate- source Voltage  
± 20  
80  
V
GS  
I
Drain Current (continuos) at T = 25°C  
A
D
C
I
Drain Current (continuos) at T = 100°C  
60  
A
D
C
I
( )  
Drain Current (pulsed)  
320  
150  
1
A
DM  
P
Total Dissipation at T = 25°C  
W
TOT  
C
Derating Factor  
W/°C  
V/ns  
dv/dt (1)  
Peak Diode Recovery voltage slope  
Storage Temperature  
7
T
stg  
– 55 to 175  
°C  
T
Max. Operating Junction Temperature  
j
(●) Pulse width limited by safe operating area  
(1) I ≤804A, di/dt ≤300A/µs, V ≤ V  
, T ≤ T  
(BR)DSS j JMAX.  
SD  
DD  
February 2003  
1/9  
STB80NE03L-06 / STB80NE03L-06-1  
THERMAL DATA  
Rthj-case  
Rthj-amb  
Thermal Resistance Junction-case Max  
1
°C/W  
°C/W  
°C  
Thermal Resistance Junction-ambient Max  
Maximum Lead Temperature For Soldering Purpose  
62.5  
300  
T
l
AVALANCHE CHARACTERISTICS  
Symbol  
Parameter  
Max Value  
Unit  
I
AR  
Avalanche Current, Repetitive or Not-Repetitive  
80  
A
(pulse width limited by T max)  
j
E
Single Pulse Avalanche Energy  
600  
mJ  
AS  
(starting T = 25 °C, I = I , V = 15 V)  
j
D
AR  
DD  
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)  
OFF  
Symbol  
Parameter  
Drain-source  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
V
I
= 250 µA, V = 0  
30  
V
(BR)DSS  
D
GS  
Breakdown Voltage  
I
Zero Gate Voltage  
V
V
V
= Max Rating  
DS  
1
µA  
µA  
nA  
DSS  
Drain Current (V = 0)  
GS  
= Max Rating, T = 125 °C  
10  
DS  
GS  
C
I
Gate-body Leakage  
= ± 20 V  
± 100  
GSS  
Current (V = 0)  
DS  
ON (1)  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
1.7  
Max.  
2.5  
Unit  
V
V
R
V
V
V
= V , I = 250µA  
Gate Threshold Voltage  
1
GS(th)  
DS  
GS  
GS  
GS  
D
Static Drain-source On  
Resistance  
= 10 V, I = 40 A  
0.005  
0.006  
0.008  
Ω
DS(on)  
D
= 4.5 V, I = 40 A  
Ω
D
DYNAMIC  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
g
(1)  
Forward Transconductance  
V
> I  
x R  
DS(on)max,  
30  
50  
S
fs  
DS  
D(on)  
I
= 40 A  
D
C
C
V
= 25V, f = 1 MHz, V = 0  
DS GS  
Input Capacitance  
Output Capacitance  
6500  
1500  
500  
pF  
pF  
pF  
iss  
oss  
C
rss  
Reverse Transfer  
Capacitance  
2/9  
STB80NE03L-06 / STB80NE03L-06-1  
ELECTRICAL CHARACTERISTICS (CONTINUED)  
SWITCHING ON  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
t
V
R
= 15 V, I = 40 A  
Turn-on Delay Time  
40  
55  
ns  
d(on)  
DD  
D
= 4.7Ω V = 4.5 V  
G
GS  
t
Rise Time  
260  
350  
130  
ns  
r
(see test circuit, Figure 3)  
Q
V
V
= 24 V, I = 80A,  
95  
30  
44  
nC  
nC  
nC  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
g
DD  
GS  
D
Q
Q
= 5V  
gs  
gd  
SWITCHING OFF  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
t
Off-voltage Rise Time  
Fall Time  
Cross-over Time  
70  
165  
250  
ns  
ns  
ns  
V
R
= 24 V, I = 80 A,  
95  
220  
340  
r(Voff)  
DD  
D
t
f
= 4.7Ω, V = 5V  
G
GS  
t
c
(see test circuit, Figure 3)  
SOURCE DRAIN DIODE  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
80  
Unit  
A
I
Source-drain Current  
SD  
I
(2)  
(1)  
Source-drain Current (pulsed)  
Forward On Voltage  
320  
1.5  
A
SDM  
V
I
I
= 80 A, V = 0  
V
SD  
SD  
SD  
GS  
t
Reverse Recovery Time  
Reverse Recovery Charge  
Reverse Recovery Current  
75  
0.14  
4
ns  
nC  
A
= 80 A, di/dt = 100A/µs,  
= 15 V, T = 150°C  
rr  
Q
V
rr  
RRM  
DD  
j
I
(see test circuit, Figure 5)  
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.  
2. Pulse width limited by safe operating area.  
Safe Operating Area  
Thermal Impedence  
3/9  
STB80NE03L-06 / STB80NE03L-06-1  
Output Characteristics  
Transfer Characteristics  
Transconductance  
Static Drain-source On Resistance  
Gate Charge vs Gate-source Voltage  
Capacitance Variations  
4/9  
STB80NE03L-06 / STB80NE03L-06-1  
Normalized On Resistance vs Temperature  
Normalized Gate Threshold Voltage vs  
Temperature  
Source-drain Diode Forward Characteristics  
5/9  
STB80NE03L-06 / STB80NE03L-06-1  
Fig. 1: Unclamped Inductive Load Test Circuit  
Fig. 2: Unclamped Inductive Waveform  
Fig. 3: Switching Times Test Circuit For  
Fig. 4: Gate Charge test Circuit  
Resistive Load  
Fig. 5: Test Circuit For Inductive Load Switching  
And Diode Recovery Times  
6/9  
STB80NE03L-06 / STB80NE03L-06-1  
D2PAK MECHANICAL DATA  
mm.  
TYP  
inch  
TYP.  
DIM.  
MIN.  
4.4  
MAX.  
4.6  
MIN.  
0.173  
0.098  
0.001  
0.027  
0.044  
0.017  
0.048  
0.352  
MAX.  
0.181  
0.106  
0.009  
0.036  
0.067  
0.023  
0.053  
0.368  
A
A1  
A2  
B
2.49  
0.03  
0.7  
2.69  
0.23  
0.93  
1.7  
B2  
C
1.14  
0.45  
1.23  
8.95  
0.6  
C2  
D
1.36  
9.35  
D1  
E
8
0.315  
0.334  
10  
10.4  
0.393  
E1  
G
8.5  
4.88  
15  
5.28  
15.85  
1.4  
0.192  
0.590  
0.050  
0.055  
0.094  
0.208  
0.625  
0.055  
0.068  
0.126  
L
L2  
L3  
M
1.27  
1.4  
1.75  
3.2  
2.4  
R
0.4  
0.015  
V2  
0º  
8º  
3
7/9  
1
STB80NE03L-06 / STB80NE03L-06-1  
TO-262 (I2PAK) MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
4.4  
TYP.  
MAX.  
4.6  
MIN.  
0.173  
0.098  
0.027  
0.044  
0.017  
0.048  
0.352  
0.094  
0.393  
0.515  
0.137  
0.050  
MAX.  
0.181  
0.106  
0.036  
0.067  
0.023  
0.053  
0.368  
0.106  
0.409  
0.531  
0.149  
0.055  
A
A1  
B
2.49  
0.7  
2.69  
0.93  
1.7  
B2  
C
1.14  
0.45  
1.23  
8.95  
2.4  
0.6  
C2  
D
1.36  
9.35  
2.7  
e
E
10  
10.4  
13.6  
3.78  
1.4  
L
13.1  
3.48  
1.27  
L1  
L2  
L1  
L2  
D
L
P011P5/E  
8/9  
STB80NE03L-06 / STB80NE03L-06-1  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the  
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from  
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications  
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information  
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or  
systems without express written approval of STMicroelectronics.  
© The ST logo is a registered trademark of STMicroelectronics  
© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco  
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.  
© http://www.st.com  
9/9  

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