STB80NF10_09 [STMICROELECTRONICS]
N-channel 100 V, 0.012 Ω, 80 A, TO-220, D2PAK low gate charge STripFET™ II Power MOSFET; N沟道100 V， 0.012 Ω ， 80 A ， TO- 220 ， D2PAK低栅电荷的STripFET ™II功率MOSFET
| 型号： | STB80NF10_09 |
| 厂家： | 
ST |
| 描述： | N-channel 100 V, 0.012 Ω, 80 A, TO-220, D2PAK low gate charge STripFET™ II Power MOSFET |
| 文件： | 总14页 (文件大小：582K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STB80NF10
STP80NF10
N-channel 100 V, 0.012 Ω, 80 A, TO-220, D2PAK
low gate charge STripFET™ II Power MOSFET
Features
RDS(on)
max
Type
VDSS
ID
STP80NF10
STB80NF10
100 V
100 V
< 0.015 Ω
< 0.015 Ω
80 A
80 A
3
3
■ Exceptional dv/dt capability
■ 100% Avalanche tested
2
1
1
TO-220
D²PAK
■ Application oriented characterization
Applications
■ Switching applications
Description
Figure 1.
Internal schematic diagram
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency isolated DC-DC converters for telecom
and computer application. It is also intended for
any application with low gate charge drive
requirements.
Table 1.
Device summary
Order codes
Marking
Package
TO-220
D²PAK
Packaging
STP80NF10
P80NF10@
B80NF10@
Tube
STB80NF10T4
Tape and reel
April 2009
Doc ID 6958 Rev 18
1/14
www.st.com
14
Contents
STB80NF10, STP80NF10
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
4
5
6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/14
Doc ID 6958 Rev 18
STB80NF10, STP80NF10
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
VDS
VGS
Drain-source voltage (VGS = 0)
Gate- source voltage
100
20
V
V
(1)
ID
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
80
A
(1)
ID
80
A
(2)
IDM
320
300
2
A
PTOT
Total dissipation at TC = 25 °C
Derating factor
W
W/°C
V/ns
mJ
dv/dt (3)
Peak diode recovery voltage slope
Single pulse avalanche energy
7
(4)
EAS
350
Tstg
Tj
Storage temperature
-55 to 175
°C
Operating junction temperature
1. Limited by package
2. Pulse width limited by safe operating area
3. ISD < 80 A, di/dt < 300 A/µs, VDD= 80% V(BR)DSS
4. Starting Tj = 25 °C, ID = 40 A, VDD = 50 V
Table 3.
Symbol
Thermal resistance
Parameter
Value
Unit
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
0.5
62.5
300
°C/W
°C/W
°C
Tl
Maximum lead temperature for soldering purpose
Doc ID 6958 Rev 18
3/14
Electrical characteristics
STB80NF10, STP80NF10
2
Electrical characteristics
(T
=25 °C unless otherwise specified)
CASE
Table 4.
Symbol
On/off states
Parameter
Test conditions
Min.
Typ.
Max. Unit
Drain-source
V(BR)DSS
ID = 250 µA, VGS = 0
100
V
breakdown voltage
Zero gate voltage
V
DS = Max rating
500
10
nA
µA
IDSS
drain current (VGS = 0)
VDS = Max rating @125°C
Gate-body leakage
current (VDS = 0)
IGSS
VGS = 20 V
100
4
nA
V
VGS(th) Gate threshold voltage
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 40 A
2
3
Static drain-source on
resistance
RDS(on)
0.012
0.015
Ω
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max. Unit
(1)
gfs
Forward transconductance VDS = 25 V , ID =40 A
Input capacitance
-
50
S
Ciss
Coss
Crss
5500
700
pF
pF
pF
VDS = 25 V, f = 1 MHz,
VGS = 0
Output capacitance
-
-
Reverse transfer
capacitance
175
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
135
23
182
nC
nC
nC
V
DD = 50 V, ID = 80 A,
VGS = 10 V
51.3
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Table 6.
Symbol
Switching times
Parameter
Test conditions
Min.
Typ.
Max. Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
26
80
ns
VDD = 50 V, ID= 40 A,
RG = 4.7 Ω, VGS=10 V
(see Figure 15)
ns
-
-
Turn-off-delay time
Fall time
116
60
ns
ns
4/14
Doc ID 6958 Rev 18
STB80NF10, STP80NF10
Electrical characteristics
Min. Typ. Max Unit
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
ISD
Source-drain current
-
-
-
80
320
1.3
A
A
V
(1)
ISDM
VSD
trr
Source-drain current (pulsed)
Forward on voltage
(2)
ISD = 80 A, VGS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=80 A, VDD = 50 V
di/dt = 100 A/µs,
Tj=150 °C
106
450
8.5
ns
nC
A
Qrr
-
IRRM
1. Pulse width limited by safe operating area
2. Pulse duration=300µs, duty cycle 1.5%
Doc ID 6958 Rev 18
5/14
Electrical characteristics
STB80NF10, STP80NF10
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
Figure 4. Output characteristics
Figure 5. Transfer characteristics
Figure 6. Transconductance
Figure 7. Static drain-source on resistance
6/14
Doc ID 6958 Rev 18
STB80NF10, STP80NF10
Electrical characteristics
Figure 8. Gate charge vs. gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs.
vs. temperature
temperature
Figure 12. Source-drain diode forward
characteristics
Doc ID 6958 Rev 18
7/14
Test circuits
STB80NF10, STP80NF10
3
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
VDD
12V
47kΩ
100nF
1kΩ
2200
3.3
µF
RL
µF
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
D.U.T.
VD
RG
VGS
2200
µF
D.U.T.
VG
2.7kΩ
47kΩ
PW
1kΩ
PW
AM01468v1
AM01469v1
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 16. Unclamped inductive load test
circuit
L
A
A
A
B
D
FAST
DIODE
L=100µH
VD
G
2200
µF
D.U.T.
B
3.3
µF
VDD
S
3.3
µF
1000
µF
B
VDD
25
Ω
ID
D
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
ton
tdon
toff
tdoff
V(BR)DSS
tr
tf
VD
90%
10%
90%
IDM
10%
VDS
ID
0
0
VDD
VDD
90%
VGS
10%
AM01472v1
AM01473v1
8/14
Doc ID 6958 Rev 18
STB80NF10, STP80NF10
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Doc ID 6958 Rev 18
9/14
Package mechanical data
STB80NF10, STP80NF10
TO-220 mechanical data
mm
inch
Dim
Min
Typ
Max
Min
Typ
Max
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
0.173
0.024
0.044
0.019
0.6
0.181
0.034
0.066
0.027
0.62
b1
c
D
D1
E
1.27
0.050
10
10.40
2.70
5.15
1.32
6.60
2.72
14
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
3.50
3.93
16.40
0.645
28.90
1.137
3.75
3.85
2.95
0.147
0.104
0.151
0.116
2.65
10/14
Doc ID 6958 Rev 18
STB80NF10, STP80NF10
Package mechanical data
D²PAK (TO-263) mechanical data
mm
inch
Dim
Min
Typ
Max
Min
Typ
Max
A
A1
b
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
4.60
0.23
0.93
1.70
0.60
1.36
9.35
0.173
0.001
0.027
0.045
0.017
0.048
0.352
0.295
0.394
0.334
0.181
0.009
0.037
0.067
0.024
0.053
0.368
b2
c
c2
D
D1
E
10.40
0.409
E1
e
8.50
2.54
0.1
e1
H
4.88
15
5.28
15.85
2.69
2.79
1.40
1.75
0.192
0.590
0.099
0.090
0.05
0.208
0.624
0.106
0.110
0.055
0.069
J1
L
2.49
2.29
1.27
1.30
L1
L2
R
0.051
0.4
0.016
V2
0°
8°
0°
8°
0079457_M
Doc ID 6958 Rev 18
11/14
Packaging mechanical data
STB80NF10, STP80NF10
5
Packaging mechanical data
2
D PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
24.4
100
0.059
13.2 0.504 0.520
0795
26.4 0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6 0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449 0.456
5.0 0.189 0.197
4.1 0.153 0.161
12.1 0.468 0.476
2.1 0.075 0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
W
* on sales type
12/14
Doc ID 6958 Rev 18
STB80NF10, STP80NF10
Revision history
6
Revision history
Table 8.
Date
Document revision history
Revision
Changes
04-Nov-2003
13-Dec-2004
16-Dec-2004
27-Jan-2005
22-Feb-2005
28-Feb-2005
01-Mar-2005
06-Apr-2006
25-Jan-2007
17-Nov-2008
15-Apr-2009
8
New datasheet according to PCN DSG-TRA/03/382
D²PAK inserted
9
10
11
12
13
14
15
16
17
18
@ inserted in table 2 for TO-220 marking
New value in table 3
Id value changed
New value in table 3
Vgs value changed
The document has been reformatted
Typo mistake on page 1 (order codes)
EAS value has been updated
IDSS value changed in Table 4: On/off states
Doc ID 6958 Rev 18
13/14
STB80NF10, STP80NF10
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14/14
Doc ID 6958 Rev 18
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