STBV32_05 [STMICROELECTRONICS]
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR; 高压快速开关NPN功率晶体管
| 型号： | STBV32_05 |
| 厂家： | 
ST |
| 描述： | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| 文件： | 总9页 (文件大小：260K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STBV32
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
n
n
n
HIGH VOLTAGE CAPABILITY
Figure 1: Package
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
n
VERY HIGH SWITCHING SPEED
APPLICATIONS
COMPACT FLUORESCENT LAMPS (CFLS)
n
DESCRIPTION
The device is manufactured using High Voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining the wide RBSOA.
TO-92
Figure 2: Internal Schematic Diagram
The STBV series is designed for use in Compact
Fluorescent Lamps.
Table 1: Order Codes
Part Number
Marking
Package
Packaging
STBV32
BV32
BV32
TO-92
TO-92
Bulk
STBV32-AP
Ammopack
Table 2: Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
V
Collector-Emitter Voltage (V = 0)
700
400
V
V
V
A
CES
BE
V
Collector-Emitter Voltage (I = 0)
CEO
B
V
Emitter-Base Voltage (I = 0, I = 0.5 A, t < 10 ms)
V
EBO
C
B
p
(BR)EBO
Collector Current
1.5
I
C
o
(f ≥ 100 Hz, duty-cycle ≤ 50 %, T = 25 C)
C
I
Collector Peak Current (t < 5ms)
Base Current
3
A
A
A
CM
p
I
0.5
1.5
1.5
B
I
Base Peak Current (t < 5ms)
BM
p
o
P
W
Total Dissipation at T = 25 C
tot
C
Rev. 2
April 2005
1/9
STBV32
Symbol
Parameter
Value
Unit
T
T
Storage Temperature
Max. Operating Junction Temperature
-65 to 150
150
°C
°C
stg
J
Table 3: Thermal Data
o
R
Thermal Resistance Junction-case
Max
Max
83.3
112
thj-case
C/W
C/W
Thermal Resistance Junction-Ambient
o
R
thj-amb
o
Table 4: Electrical Characteristics (T
= 25 C unless otherwise specified)
case
Symbol
Parameter
Collector Cut-off Current V = 700 V
(V = -1.5 V)
Test Conditions
Min.
Typ.
Max.
1
5
Unit
mA
mA
I
CEV
CE
o
BE
V
= 700 V
T =125 C
j
CE
V
Emitter-Base
I = 10 mA
9
18
V
(BR)EBO
E
Breakdown Voltage
(I = 0 )
C
V
* Collector-Emitter
I
= 10 mA
400
V
CEO(sus)
C
Sustaining Voltage
(I = 0 )
B
V
*
Collector-Emitter
Saturation Voltage
I
I
I
= 0.5 A
= 1 A
I = 100 mA
0.5
1
1.5
V
V
V
CE(sat)
C
C
C
B
I = 250 mA
B
= 1.5 A
I = 500 mA
B
V
*
Base-Emitter Saturation I = 0.5 A
I = 100 mA
1.0
1.2
V
V
BE(sat)
C
B
Voltage
I
I
I
I
I
= 1 A
= 0.5 A
= 1 A
I = 250 mA
B
C
h
DC Current Gain
V
V
= 2 V
8
5
35
25
FE
C
CE
CE
= 2 V
C
C
RESISTIVE LOAD
Rise Time
Storage Time
Fall Time
= 1 A
V
= 125 V
CC
t
t
1
4
0.7
µs
µs
µs
= -I = 200 mA
t = 25 µs
p
r
B1
B2
(see figure 12)
s
t
f
INDUCTIVE LOAD
Storage Time
I
I
= 1 A
V
= 300 V
= -5V
BE(off)
C
clamp
t
0.8
µs
= 200 mA
V
R
s
B1
L = 50 mH
= 0
BB
(see figure 13)
* Pulsed: Pulsed duration = 300 µs, duty cycle ≤ 1.5 %.
2/9
STBV32
Figure 3: Safe Operating Area
Figure 6: Derating Curve
Figure 4: Output Characteristics
Figure 7: Collector-Emitter Saturation Voltage
Figure 5: Base-Emitter Saturation Voltage
Figure 8: DC Current Gain
3/9
STBV32
Figure 9: DC Current Gain
Figure 11: Inductive Load Switching Times
Figure 10: Reverse Biased Operating Area
4/9
STBV32
Figure 12: Resistive Load Switching Test Circuit
1) Fast electronic switch
2) Non-inductive Resistor
Table 13: Inductive Load Switching Test Circuit
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
5/9
STBV32
TO-92 BULK SHIPMENT MECHANICAL DATA
mm.
DIM.
MIN.
4.32
0.36
4.45
3.30
2.41
1.14
12.70
2.16
0.92
0.41
TYP
MAX.
4.95
0.51
4.95
3.94
2.67
1.40
15.49
2.41
1.52
0.56
A
b
D
E
e
e1
L
R
S1
W
V
5 O
0102782 C
6/9
STBV32
TO-92 AMMOPACK SHIPMENT (Suffix”-AP”) MECHANICAL DATA
mm.
DIM.
MIN.
TYP
MAX.
4.80
A1
T
3.80
T1
1.60
T2
2.30
d
0.48
P0
12.50
5.65
12.70
6.35
2.54
12.90
7.05
P2
F1,F2
delta H
W
2.44
2.94
-2.00
17.50
5.70
2.00
18.00
6.00
9.00
19.00
6.30
W0
W1
W2
H
8.50
9.25
0.50
18.50
15.50
20.50
16.50
25.00
4.20
H0
H1
D0
t
16.00
4.00
3.80
0.90
L
11.00
I1
3.00
delta P
-1.00
1.00
7/9
STBV32
Figure 1: Revision History
Version
Release Date
Change Designator
01-Dec-2002
27-Apr-2005
1
1
First Release.
Total dissipation value has been modified.
8/9
STBV32
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2005 STMicroelectronics - All Rights Reserved
STMicroelectronics group of companies
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www.st.com
9/9
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