STD120N4F6 [STMICROELECTRONICS]
N-channel 40 V, 3.5 mΩ , 80 A, DPAK, D²PAK STripFET⢠VI DeepGATE⢠Power MOSFET; N沟道40 V ， 3.5 MI © ， 80 A， DPAK ， D²PAK STripFETâ ?? ¢六DeepGATEâ ?? ¢功率MOSFET
| 型号： | STD120N4F6 |
| 厂家： | 
ST |
| 描述： | N-channel 40 V, 3.5 mΩ , 80 A, DPAK, D²PAK STripFET⢠VI DeepGATE⢠Power MOSFET |
| 文件： | 总18页 (文件大小：998K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STB120N4F6
STD120N4F6
N-channel 40 V, 3.5 mΩ , 80 A, DPAK, D²PAK
STripFET™ VI DeepGATE™ Power MOSFET
Features
RDS(on)
Order codes
VDSS
ID
max.
4 mΩ
4 mΩ
80 A (1)
80 A (1)
STB120N4F6
STD120N4F6
40 V
40 V
3
3
1. Current limited by package
1
1
DPAK
■ Standard threshold drive
■ 100% avalanche tested
D²PAK
Application
■ Switching applications
■ Automotive
Figure 1.
Internal schematic diagram
Description
$ ꢄ4!" OR ꢅꢆ
These devices are 40 V N-channel STripFET™ VI
Power MOSFET based on the ST’s proprietary
STripFET™ technology, with a new gate structure.
The resulting Power MOSFET exhibits the lowest
'ꢄꢁꢆ
R
in all packages.
DS(on)
3ꢄꢇꢆ
!-ꢀꢁꢂꢃꢂVꢁ
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STB120N4F6
STD120N4F6
D²PAK
DPAK
120N4F6
Tape and reel
May 2011
Doc ID 17042 Rev 5
1/18
www.st.com
18
Contents
STB120N4F6, STD120N4F6
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/18
Doc ID 17042 Rev 5
STB120N4F6, STD120N4F6
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
40
Unit
V
VDS
VGS
Drain-source voltage (VGS = 0)
Gate-source voltage
20
V
(1)
Drain current (continuous) at TC = 25 °C
80
A
ID
(1)
Drain current (continuous) at TC = 100 °C
80
A
A
ID
(2)
Drain current (pulsed)
320
110
IDM
PTOT
Tstg
Tj
Total dissipation at TC = 25 °C
Storage temperature
W
-55 to 175
°C
Operating junction temperature
1. Current limited by package
2. Pulse width limited by safe operating area
Table 3.
Symbol
Thermal resistance
Parameter
Value
Unit
DPAK
D²PAK
Rthj-case
Rthj-pcb
Thermal resistance junction-case max
Thermal resistance junction-pcb max (1)
1.36
°C/W
°C/W
50
35
1. When mounted on 1 inch2 2 oz. Cu board.
Table 4.
Symbol
Thermal resistance
Parameter
Value
40
Unit
A
(1)
Avalanche current, repetitive or not-repetitive
Single pulse avalanche energy
IAR
(2)
394
mJ
EAS
1. Pulse width limited by Tj max
2. Starting Tj = 25 °C, ID = 40 A, VDD = 25 V
Doc ID 17042 Rev 5
3/18
Electrical characteristics
STB120N4F6, STD120N4F6
2
Electrical characteristics
(T
= 25 °C unless otherwise specified)
CASE
Table 5.
Symbol
Static
Parameter
Test conditions
Min.
Typ.
Max. Unit
Drain-source breakdown
Voltage
V(BR)DSS
ID = 250 µA, VGS= 0
40
V
VDS = 20 V
1
µA
µA
Zero gate voltage drain
current (VGS = 0)
IDSS
VDS = 20 V,Tc = 125 °C
10
Gate body leakage current
(VDS = 0)
IGSS
VGS
=
20 V
±100
4
nA
V
VGS(th) Gate threshold voltage
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 40 A
2
Static drain-source on
resistance
RDS(on)
3.5
4.0
mΩ
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min
Typ.
Max. Unit
Input capacitance
Output capacitance
Ciss
Coss
Crss
3850
650
pF
VDS = 25 V, f=1 MHz,
VGS = 0 V
-
-
pF
pF
Reverse transfer
capacitance
350
Qg
Qgs
Qgd
VDD = 20 V, ID = 80 A
VGS = 10 V
Total gate charge
Gate-source charge
Gate-drain charge
65
20
16
nC
nC
nC
-
-
-
-
(see Figure 14)
RG
Intrinsic gate resistance
f = 1 MHz open drain
1.5
Ω
4/18
Doc ID 17042 Rev 5
STB120N4F6, STD120N4F6
Electrical characteristics
Table 7.
Symbol
Switching on/off (inductive load)
Parameter
Test conditions
Min. Typ.
Max. Unit
td(on)
tr
td(off)
tf
Turn-on delay time
20
ns
-
-
VDD = 20 V, ID = 40 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 15)
Rise time
70
ns
Turn-off delay time
Fall time
40
ns
-
-
20
ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
Source-drain current
80
A
A
-
-
(1)
Source-drain current (pulsed)
320
ISDM
(2)
ISD = 40 A, VGS = 0
ISD = 80 A,
Forward on voltage
1.1
V
VSD
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
40
56
ns
nC
A
di/dt = 100 A/µs,
VDD = 30 V
Qrr
-
2.8
IRRM
(see Figure 17)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 17042 Rev 5
5/18
Electrical characteristics
STB120N4F6, STD120N4F6
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
AM08627v1
I
D
(A)
Tj=175°C
Tc=25°C
Single pulse
100
100µs
1ms
10
10ms
1
0.1
10
V
DS(V)
0.1
1
Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
AM08628v1
AM08629v1
I
D
(A)
ID
(A)
V
GS=10V
VDS=2V
350
300
250
300
6V
200
150
100
200
150
100
5V
50
0
50
0
4V
1
7
1
4
5
6
8
V
DS(V)
4
5
VGS(V)
0
2
3
0
2
3
Figure 6.
Normalized B
vs temperature Figure 7.
Static drain-source on resistance
VDSS
AM08630v1
AM08631v1
BVDSS
R
DS(on)
(norm)
(mΩ)
V
GS=10V
1.15
4.5
4.0
3.5
3.0
1.10
1.05
1.00
0.95
0.90
2.5
2.0
0.85
0.80
40
60
20
80
-75
-25
25
75
TJ
(°C)
ID(A)
125
175
6/18
Doc ID 17042 Rev 5
STB120N4F6, STD120N4F6
Electrical characteristics
Figure 8.
Gate charge vs gate-source voltage Figure 9.
Capacitance variations
AM08632v1
AM08633v1
V
GS
C
(V)
(pF)
V
I
DD=20V
Ciss
10
8
D=80A
1000
Coss
Crss
6
100
10
4
2
0
20
40
70
0.1
50 60
Qg(nC)
VDS(V)
0
10
30
1
10
Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs
vs temperature temperature
AM08634v1
AM08635v1
V
GS(th)
(norm)
RDS(on)
(norm)
VGS=10V
ID
=40A
1.2
1.0
0.8
0.6
2.0
1.5
1.0
0.5
0
0.4
0.2
-75
175
-75
-25
25
75
TJ(°C)
-25
25
75
125
125
175
T
J(°C)
Figure 12. Source-drain diode forward
characteristics
AM08636v1
VSD
(V)
TJ=-55°C
1.0
0.9
0.8
TJ=25°C
0.7
0.6
TJ=175°C
0.5
0.4
10
20
30 40 50
70 80
ISD(A)
60
Doc ID 17042 Rev 5
7/18
Test circuits
STB120N4F6, STD120N4F6
3
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
VDD
12V
47kΩ
100nF
1kΩ
2200
3.3
μF
RL
μF
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
D.U.T.
VD
RG
VGS
2200
μF
D.U.T.
VG
2.7kΩ
47kΩ
PW
1kΩ
PW
AM01468v1
AM01469v1
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 16. Unclamped Inductive load test
circuit
L
A
A
A
B
D
FAST
DIODE
L=100μH
VD
G
2200
μF
D.U.T.
B
3.3
μF
VDD
S
3.3
μF
1000
μF
B
VDD
25
Ω
ID
D
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
ton
tdon
toff
tdoff
V(BR)DSS
tr
tf
VD
90%
10%
90%
IDM
10%
VDS
ID
0
0
VDD
VDD
90%
VGS
10%
AM01472v1
AM01473v1
8/18
Doc ID 17042 Rev 5
STB120N4F6, STD120N4F6
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and products status are available at: www.st.com.
ECOPACK is an ST trademark.
Doc ID 17042 Rev 5
9/18
Package mechanical data
STB120N4F6, STD120N4F6
Table 9.
Dim.
D²PAK (TO-263) mechanical data
mm
Min.
Typ.
Max.
A
A1
b
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
4.60
0.23
0.93
1.70
0.60
1.36
9.35
b2
c
c2
D
D1
E
10.40
E1
e
8.50
2.54
e1
H
4.88
15
5.28
15.85
2.69
2.79
1.40
1.75
J1
L
2.49
2.29
1.27
1.30
L1
L2
R
0.4
V2
0°
8°
10/18
Doc ID 17042 Rev 5
STB120N4F6, STD120N4F6
Figure 19. D²PAK footprint
Package mechanical data
(a)
16.90
12.20
5.08
1.60
3.50
9.75
Footprint
Figure 20. D²PAK (TO-263) drawing
0079457_R
a. All dimension are in millimeters
Doc ID 17042 Rev 5
11/18
Package mechanical data
STB120N4F6, STD120N4F6
Table 10. DPAK (TO-252) mechanical data
mm
Dim.
Min.
Typ.
Max.
A
A1
A2
b
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
b4
c
c2
D
D1
E
5.10
6.40
6.60
E1
e
4.70
2.28
e1
H
4.40
9.35
1
4.60
10.10
1.50
L
L1
L2
L4
R
2.80
0.80
0.60
0°
1
0.20
V2
8°
(b)
Figure 21. DPAK footprint
6.7
3
1.8
1.6
2.3
2.3
6.7
1.6
AM08850v1
b. All dimension are in millimeters
12/18
Doc ID 17042 Rev 5
STB120N4F6, STD120N4F6
Figure 22. DPAK (TO-252) drawing
Package mechanical data
0068772_H
Doc ID 17042 Rev 5
13/18
Packaging mechanical data
STB120N4F6, STD120N4F6
5
Packaging mechanical data
Table 11. D²PAK (TO-263) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
D
10.5
15.7
1.5
10.7
15.9
1.6
A
B
C
D
G
N
T
330
1.5
12.8
20.2
24.4
100
13.2
26.4
30.4
D1
E
1.59
1.65
11.4
4.8
1.61
1.85
11.6
5.0
F
K0
P0
P1
P2
R
3.9
4.1
11.9
1.9
12.1
2.1
Base qty
Bulk qty
1000
1000
50
T
0.25
23.7
0.35
24.3
W
14/18
Doc ID 17042 Rev 5
STB120N4F6, STD120N4F6
Packaging mechanical data
Table 12. DPAK (TO-252) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
B1
D
6.8
7
A
B
C
D
G
N
T
330
10.4
10.6
12.1
1.6
1.5
12.8
20.2
16.4
50
13.2
18.4
22.4
1.5
1.5
D1
E
1.65
7.4
1.85
7.6
F
K0
P0
P1
P2
R
2.55
3.9
2.75
4.1
Base qty.
Bulk qty.
2500
2500
7.9
8.1
1.9
2.1
40
T
0.25
15.7
0.35
16.3
W
Doc ID 17042 Rev 5
15/18
Packaging mechanical data
Figure 23. Tape for DPAK (TO-252) and D²PAK (TO-263)
STB120N4F6, STD120N4F6
10 pitches cumulative
tolerance on tape +/- 0.2 mm
P0
D
P2
Top cover
tape
T
E
F
W
K0
B0
A0
D1
P1
User direction of feed
R
Bending radius
User direction of feed
AM08852v2
Figure 24. Reel for DPAK (TO-252) and D²PAK (TO-263)
T
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
N
A
G measured at hub
Full radius
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
16/18
Doc ID 17042 Rev 5
STB120N4F6, STD120N4F6
Revision history
6
Revision history
Table 13. Document revision history
Date
Revision
Changes
09-Feb-2010
29-Oct-2010
11-Nov-2010
13-May-2011
17-May-2011
1
2
3
4
5
First release
Document status promoted from preliminary data to datasheet.
Corrected RDS(on) value in Table 5: Static.
Removed package and mechanical data: TO-220
Description in cover page has been updated.
Doc ID 17042 Rev 5
17/18
STB120N4F6, STD120N4F6
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18/18
Doc ID 17042 Rev 5
相关型号：
STD120N4LF6
N-channel 40 V, 3.1 mΩ, 80 A DPAK, D²PAK STripFET⢠VI DeepGATE⢠Power MOSFET
STMICROELECTR
STD120S
This axial leaded strap product is designed to provide reliable, non-cycling protection for rechanrgeable batteries
LITTELFUSE
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