STD12N65M5 [STMICROELECTRONICS]

N-channel 650 V, 0.39 Ohm, 8.5 A MDmesh V Power MOSFET DPAK, I2PAK, TO-220FP, TO-220, IPAK; N沟道650 V， 0.39欧姆， 8.5的MDmesh V功率MOSFET采用DPAK ， I2PAK ， TO- 220FP ， TO- 220 ， IPAK


型号：	STD12N65M5
厂家：	ST
描述：	N-channel 650 V, 0.39 Ohm, 8.5 A MDmesh V Power MOSFET DPAK, I2PAK, TO-220FP, TO-220, IPAK N沟道650 V， 0.39欧姆， 8.5的MDmesh V功率MOSFET采用DPAK ， I2PAK ， TO- 220FP ， TO- 220 ， IPAK 晶体晶体管功率场效应晶体管开关脉冲
文件：	总23页 (文件大小：1092K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

STD12N65M5, STF12N65M5, STI12N65M5

STP12N65M5, STU12N65M5

N-channel 650 V, 0.39 Ω, 8.5 A MDmesh™ V Power MOSFET

DPAK, I²PAK, TO-220FP, TO-220, IPAK

Features

V_DSS

T_Jmax

R_DS(on)

max

Type

I_D

P_TOT

STD12N65M5

STF12N65M5

STI12N65M5

STP12N65M5

STU12N65M5

8.5 A 70 W

8.5 A⁽¹⁾25 W

IPAK

TO-220

710 V < 0.43 Ω 8.5 A 70 W

8.5 A 70 W

DPAK

8.5 A 70 W

1. Limited only by maximum temperature allowed.

■ Worldwide best R

* area

DS(on)

TO-220FP

I²PAK

■ Higher V

rating and high dv/dt capability

DSS

■ Excellent switching performance

■ Easy to drive

■ 100% avalanche tested

Figure 1.

Internal schematic diagram

Applications

$ꢅꢆꢇ

Switching applications

Description

'ꢅꢁꢇ

These devices are N-channel MDmesh™ V

Power MOSFETs based on an innovative

proprietary vertical process technology, which is

combined with STMicroelectronics’ well-known

PowerMESH™ horizontal layout structure. The

resulting product has extremely low on-

3ꢅꢈꢇ

resistance, which is unmatched among silicon-

based Power MOSFETs, making it especially

suitable for applications which require superior

power density and outstanding efficiency.

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Table 1.

Device summary

Order codes

Marking

Packages

DPAK

Packaging

STD12N65M5

STF12N65M5

STI12N65M5

STP12N65M5

STU12N65M5

Tape and reel

Tube

TO-220FP

I²PAK

12N65M5

Tube

TO-220

IPAK

Tube

June 2011

Doc ID 15428 Rev 5

1/23

www.st.com

Contents

STD/F/I/P/U12N65M5

Contents

Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1

Electrical characteristics (curves)

. . . . . . . . . . . . . . . . . . . . . . . . . 6

Test circuits

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

2/23

Doc ID 15428 Rev 5

STD/F/I/P/U12N65M5

Electrical ratings

Table 2.

Symbol

Absolute maximum ratings

Parameter

Value

Unit

TO-220, IPAK,

DPAK, I²PAK

TO-220FP

V_DS

V_GS

I_D

Drain-source voltage (V_GS= 0)

Gate-source voltage

650

Drain current (continuous) at T_C= 25 °C

Drain current (continuous) at T_C= 100 °C

Drain current (pulsed)

8.5

5.4

8.5 ⁽¹⁾

5.4 ⁽¹⁾

34 ⁽¹⁾

I_D

(2)

I_DM

P_TOT

I_AR

Total dissipation at T_C= 25 °C

Avalanche current, repetitive or not-

repetitive (pulse width limited by T_jmax)

2.5

Single pulse avalanche energy

E_AS

150

(starting T_j= 25 °C, I_D= I_AR, V_DD= 50 V)

dv/dt ⁽³⁾Peak diode recovery voltage slope

V/ns

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t = 1 s; TC = 25 °C)

V_ISO

2500

T_stg

T_j

Storage temperature

- 55 to 150

150

°C

Max. operating junction temperature

1. Limited only by maximum temperature allowed.

2. Pulse width limited by safe operating area.

3. I_SD≤ 8.5 A, di/dt ≤400 A/µs; V_Peak< V_(BR)DSS, V_{DD = 400 V}

Table 3.

Symbol

Thermal data

Parameter

Value

DPAK IPAK I²PAK TO-220 TO-220FP

1.79

Unit

Thermal resistance junction-case

max

R_thj-case

R_thj-amb

°C/W

°C

Thermal resistance junction-

ambient max

100

62.5

Thermal resistance junction-pcb

max

(1)

R_thj-pcb

T_l

Maximum lead temperature for

soldering purpose

300

1. When mounted on 1inch² FR-4 board, 2 oz Cu

Doc ID 15428 Rev 5

3/23

Electrical characteristics

STD/F/I/P/U12N65M5

Electrical characteristics

(T = 25 °C unless otherwise specified)

Table 4.

Symbol

On /off states

Parameter

Test conditions

I_D= 1 mA, V_GS= 0

_DS= Max rating

Min.

Typ.

Max. Unit

Drain-source

breakdown voltage

V_(BR)DSS

650

Zero gate voltage

µA

I_DSS

drain current (V_GS= 0) V_DS= Max rating, T_C=125 °C

100

Gate-body leakage

I_GSS

V_GS

25 V

100

current (V_DS= 0)

V_GS(th)

R_DS(on)

Gate threshold voltage V_DS= V_GS, I_D= 250 µA

Static drain-source on

V_GS= 10 V, I_D= 4.3 A

0.39

0.43

Ω

resistance

Table 5.

Symbol

Dynamic

Parameter

Test conditions

Min.

Typ.

Max. Unit

Input capacitance

C_iss

C_oss

C_rss

900

V_DS= 100 V, f = 1 MHz,

V_GS= 0

Output capacitance

Reverse transfer

capacitance

Equivalent

capacitance time

(1)

C_o(tr)

V_DS= 0 to 520 V, V_GS= 0

f = 1 MHz open drain

Equivalent

capacitance energy

(2)

C_o(er)

Intrinsic gate

resistance

R_G

2.5

Ω

Q_g

Q_gs

Q_gd

Total gate charge

Gate-source charge

Gate-drain charge

V_DD= 520 V, I_D= 4.25 A,

V_GS= 10 V

4.8

8.3

(see Figure 20)

1. Time related is defined as a constant equivalent capacitance giving the same charging time as C_osswhen

V_DSincreases from 0 to 80% V_DSS

2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as C_oss

when V_DSincreases from 0 to 80% V_DSS

4/23

Doc ID 15428 Rev 5

STD/F/I/P/U12N65M5

Electrical characteristics

Table 6.

Symbol

Switching times

Parameter

Test conditions

Min. Typ.

Max Unit

t_d(v)

t_r(v)

t_f(i)

Voltage delay time

Voltage rise time

Current fall time

Crossing time

22.6

V_DD= 400 V, I_D= 5 A,

17.6

R_G= 4.7 Ω, V_GS= 10 V

(see Figure 21 and

Figure 24)

15.6

t_c(off)

23.4

Table 7.

Symbol

Source drain diode

Parameter

Test conditions

Min. Typ. Max. Unit

I_SD

Source-drain current

8.5

(1)

I_SDM

Source-drain current (pulsed)

(2)

V_SD

Forward on voltage

I_SD= 8.5 A, V_GS= 0

1.5

t_rr

Reverse recovery time

Reverse recovery charge

Reverse recovery current

230

2.2

µC

I_SD= 8.5 A, di/dt = 100 A/µs

Q_rr

V_DD= 100 V (see Figure 24)

I_RRM

t_rr

Reverse recovery time

Reverse recovery charge

Reverse recovery current

I_SD= 8.5 A, di/dt = 100 A/µs

V_DD= 100 V, T_j= 150 °C

(see Figure 24)

280

2.7

µC

Q_rr

I_RRM

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Doc ID 15428 Rev 5

5/23

Electrical characteristics

STD/F/I/P/U12N65M5

2.1

Electrical characteristics (curves)

Figure 2.

Safe operating area for TO-220 and Figure 3.

I²PAK

Thermal impedance for TO-220 and

I²PAK

AM05572v1

(A)

10µs

100µs

0.1

1ms

10ms

Tj=150°C

Tc=25°C

Sinlge

pulse

0.01

VDS(V)

0.1

100

Figure 4.

Safe operating area for TO-220FP Figure 5.

Thermal impedance for TO-220FP

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Safe operating area for DPAK, IPAK Figure 7.

Thermal impedance for DPAK, IPAK

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6/23

Doc ID 15428 Rev 5

STD/F/I/P/U12N65M5

Electrical characteristics

Figure 8.

Output characteristics

Figure 9.

Transfer characteristics

AM05575v1

AM05576v1

(A)

GS=10V

DS= 20V

DS(V)

GS(V)

Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance

AM05578v1

600

AM05577v1

(V)

DS(on)

(Ω)

DD=520V

=4.25A

0.43

0.38

0.33

0.28

0.23

0.18

500

400

GS= 10V

VDS

300

200

100

0.13

0.08

(nC)

D(A)

Figure 12. Capacitance variations

Figure 13. Output capacitance stored energy

AM05579v1

AM05580v1

(pF)

^oss(µJ)

4.0

3.5

3.0

1000

100

Ciss

2.5

2.0

1.5

1.0

Coss

Crss

0.5

0.1

100

200

400 500

600

DS(V)

100

300

VDS(V)

Doc ID 15428 Rev 5

7/23

Electrical characteristics

STD/F/I/P/U12N65M5

Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs

vs temperature temperature

AM05581v1

AM05501v2

DS(on)

GS(th)

(norm)

1.10

1.00

2.1

= 4.25 A

1.9

1.7

GS= 10 V

1.5

1.3

1.1

0.9

0.90

0.80

0.7

0.5

-50

-25

0.70

-50

-25

25 50 75

J(°C)

25 50 75

TJ(°C)

125

100

Figure 16. Source-drain diode forward

characteristics

Figure 17. Normalized B

@ 1 mA vs

VDSS

temperature

AM05584v1

AM05583v1

(V)

BVDSS

(norm)

TJ=-50°C

1.07

1.05

1.2

=25°C

1.0

1.03

1.01

0.99

0.8

0.6

0.4

TJ=150°C

0.97

0.95

0.93

0.2

-50

-25

SD(A)

25 50 75

TJ(°C)

100

Figure 18. Switching losses vs gate resistance

(1)

AM05585v1

(µJ)

Eon

ID=5A

V^DD=400V

Eoff

R^G(Ω)

1. Eon including reverse recovery of a SiC diode

8/23

Doc ID 15428 Rev 5

STD/F/I/P/U12N65M5

Test circuits

Figure 19. Switching times test circuit for

resistive load

Figure 20. Gate charge test circuit

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Figure 21. Test circuit for inductive load

switching and diode recovery times

Figure 22. Unclamped inductive load test

circuit

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Doc ID 15428 Rev 5

9/23

Package mechanical data

STD/F/I/P/U12N65M5

Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK packages, depending on their level of environmental compliance. ECOPACK

specifications, grade definitions and product status are available at: www.st.com. ECOPACK

is an ST trademark.

10/23

Doc ID 15428 Rev 5

STD/F/I/P/U12N65M5

Package mechanical data

Table 8.

Dim.

DPAK (TO-252) mechanical data

Min.

Typ.

Max.

2.20

0.90

0.03

0.64

5.20

0.45

0.48

6.00

2.40

1.10

0.23

0.90

5.40

0.60

6.20

5.10

6.40

6.60

4.70

2.28

4.40

9.35

4.60

10.10

1.50

2.80

0.80

0.60

0°

0.20

8°

Doc ID 15428 Rev 5

11/23

Package mechanical data

Figure 25. DPAK (TO-252) drawing

STD/F/I/P/U12N65M5

0068772_H

(a)

Figure 26. DPAK footprint

6.7

1.8

1.6

2.3

6.7

1.6

AM08850v1

a. All dimension are in millimeters

12/23

Doc ID 15428 Rev 5

STD/F/I/P/U12N65M5

Package mechanical data

Table 9.

DIM.

IPAK (TO-251) mechanical data

min.

mm.

typ

max.

2.20

0.90

0.64

2.40

1.10

0.90

0.95

5.40

5.20

0.3

0.45

0.48

6.00

6.40

0.60

6.20

6.60

2.28

4.40

4.60

9.40

16.10

9.00

0.80

1.20

0.80

1.00

Doc ID 15428 Rev 5

13/23

Package mechanical data

Figure 27. IPAK (TO-251) drawing

STD/F/I/P/U12N65M5

0068771_H

AM09214V1

14/23

Doc ID 15428 Rev 5

STD/F/I/P/U12N65M5

Package mechanical data

Table 10. I²PAK (TO-262) mechanical data

mm.

typ

DIM.

min.

max.

4.40

2.40

0.61

1.14

0.49

1.23

8.95

2.40

4.95

4.60

2.72

0.88

1.70

0.70

1.32

9.35

2.70

5.15

10.40

3.50

1.27

3.93

1.40

Doc ID 15428 Rev 5

15/23

Package mechanical data

Figure 28. I²PAK (TO-262) drawing

STD/F/I/P/U12N65M5

0015988_typeA_Rev_S

16/23

Doc ID 15428 Rev 5

STD/F/I/P/U12N65M5

Package mechanical data

Table 11. TO-220 type A mechanical data

Dim.

Min.

Typ.

Max.

4.40

0.61

1.14

0.48

15.25

4.60

0.88

1.70

0.70

15.75

1.27

10.40

2.70

5.15

1.32

6.60

2.72

2.40

4.95

1.23

6.20

2.40

L20

L30

∅P

3.50

3.93

16.40

28.90

3.75

2.65

3.85

2.95

Doc ID 15428 Rev 5

17/23

Package mechanical data

Figure 29. TO-220 type A drawing

STD/F/I/P/U12N65M5

0015988_typeA_Rev_S

18/23

Doc ID 15428 Rev 5

STD/F/I/P/U12N65M5

Package mechanical data

Table 12. TO-220FP mechanical data

Dim.

Min.

Typ.

Max.

4.4

2.5

4.6

2.7

2.5

2.75

0.7

0.45

0.75

1.15

4.95

2.4

1.70

5.2

2.7

10.4

Dia

28.6

9.8

2.9

15.9

30.6

10.6

3.6

16.4

9.3

3.2

Figure 30. TO-220FP drawing

Dia

7012510_Rev_K

Doc ID 15428 Rev 5

19/23

Packaging mechanical data

STD/F/I/P/U12N65M5

Packaging mechanical data

Table 13. DPAK (TO-252) tape and reel mechanical data

Tape

Reel

Dim.

Min.

Max.

Min.

Max.

6.8

330

10.4

10.6

12.1

1.6

1.5

12.8

20.2

16.4

13.2

18.4

22.4

1.5

1.65

7.4

1.85

7.6

2.55

3.9

2.75

4.1

Base qty.

Bulk qty.

2500

7.9

8.1

1.9

2.1

0.25

15.7

0.35

16.3

20/23

Doc ID 15428 Rev 5

STD/F/I/P/U12N65M5

Figure 31. Tape

Packaging mechanical data

10 pitches cumulative

tolerance on tape +/- 0.2 mm

Top cover

tape

User direction of feed

Bending radius

User direction of feed

AM08852v2

Figure 32. Reel

REEL DIMENSIONS

40mm min.

Access hole

At sl ot location

G measured at hub

Full radius

Tape slot

in core for

tape start 25 mm min.

width

AM08851v2

Doc ID 15428 Rev 5

21/23

Revision history

STD/F/I/P/U12N65M5

Revision history

Table 14. Document revision history

Date

Revision

Changes

24-Feb-2009

27-Feb-2009

21-Jan-2010

First release

Corrected package information on first page

Document status promoted from preliminary data to datasheet

– Figure 15: Normalized on resistance vs temperature has been

updated

29-Jun-2010

22-Jun-2011

– V_GSvale in Table 4 has been corrected

Updated Figure 18 and Figure 20.

Updated gate charge in Table 5 and switching time in Table 6.

22/23

Doc ID 15428 Rev 5

STD/F/I/P/U12N65M5

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Doc ID 15428 Rev 5

23/23

STD12N65M5 [STMICROELECTRONICS]

相关型号：

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