STD16NF06T4 [STMICROELECTRONICS]
N-Channel 60V - 0.060Ω - 16A - DPAK STripFET⢠II Power MOSFET; N沟道60V - 0.060Î © - 16A - DPAK STripFETâ ?? ¢ II功率MOSFET
| 型号： | STD16NF06T4 |
| 厂家： | 
ST |
| 描述： | N-Channel 60V - 0.060Ω - 16A - DPAK STripFET⢠II Power MOSFET |
| 文件： | 总11页 (文件大小：705K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STD16NF06
N-Channel 60V - 0.060Ω - 16A - DPAK
STripFET™ II Power MOSFET
General features
VDSS
RDS(on)
ID
16A
Type
STD16NF06
60V
<0.070Ω
3
■ Typical RDS(on) = 0.060Ω
1
DPAK
TO-252
■ Exceptional dv/dt Capability
■ 100% Avalanche Tested
■ Application Oriented Characterization
Description
Internal schematic diagram
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a
remarkable manufacturing reproducibility
Applications
■ Audio Amplifiers
■ Power Tools
■ Automotive Environment
Order codes
Part Number
Marking
Package
Packaging
STD16NF06T4
D16NF06
TO-252
TAPE & REEL
Rev 1
1/11
January 2006
www.st.com
11
1 Electrical ratings
STD16NF06
1
Electrical ratings
Table 1.
Absolute maximum ratings
Parameter
Symbol
Value
Unit
VDS
VDGR
VGS
Drain-source Voltage (VGS = 0V)
60
60
V
V
Drain-gate Voltage (RGS = 20 kΩ)
Gate-Source Voltage
± 20
16
V
ID
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
A
ID
11
A
IDM Note 4
Drain Current (pulsed)
64
A
PTOT
Total Dissipation at TC = 25°C
Derating Factor
40
W
0.27
10.5
178
W/°C
V/ns
mJ
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
dv/dt
EAS
TJ
Operating Junction Temperature
Storage Temperature
-55 to 175
°C
Tstg
Table 2.
Thermal data
RthJC
Thermal Resistance Junction-case Max
3.75
100
°C/W
°C/W
RthJA
Tl
Thermal Resistance Junction-amb Max
Maximum Lead Temperature For Soldering
Purpose
275
°C
2/11
STD16NF06
2 Electrical characteristics
2
Electrical characteristics
( TCASE = 25 °C unless otherwise specified )
Table 3.
Symbol
On/off states
Parameter
Test Conditions
D = 250µA VGS= 0
VDS = Max Rating
Min.
Typ.
Max.
Unit
Drain-Source Breakdown
Voltage
V(BR)DSS
I
60
V
1
µA
µA
Zero Gate Voltage Drain
Current (VGS = 0)
IDSS
V
DS = Max Rating TC=125°C
10
Gate Body Leakage Current
(VDS = 0)
IGSS
V
GS = ±20V
±100
µA
VGS(th)
RDS(on)
VDS = VGS
VGS = 10V
ID = 250µA
ID = 8A
Gate Threshold Voltage
2
V
Static Drain-Source On
Resistance
0.060
0.070
Ω
Table 4.
Symbol
Dynamic
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs Note 5
VDS = 25V
ID = 8A
Forward Transconductance
6
S
Ciss
Coss
Crss
Input Capacitance
400
103
41.5
pF
pF
pF
VDS = 15V, f = 1MHz, VGS = 0
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
VDD =30
ID = 16A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
14.1
2.8
nC
nC
nC
VGS =10V
5.4
Figure 14 on page 7
Table 5.
Symbol
Switching times
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VDD = 30V, ID = 8A,
RG = 4.7Ω, VGS = 10V
Figure 13 on page 7
4
ns
ns
td(on)
tr
Turn-on Delay Time
Rise Time
15
V
DD = 30V, ID = 8A,
16
ns
ns
td(off)
tf
Off voltage Rise Time
FallTime
RG = 4.7Ω, VGS = 10V
5.5
Figure 15 on page 7
3/11
2 Electrical characteristics
STD16NF06
Table 6.
Source drain diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
16
64
A
A
ISDM Note 4 Source-drain Current (pulsed)
VSD Note 5
ISD = 8A
VGS = 0
Forward on Voltage
1.5
V
trr
ISD = 16A, di/dt = 100A/µs,
DD = 20V, TJ =150°C
Figure 15 on page 7
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
49
78
ns
µC
A
Qrr
V
3.2
IRRM
Note: 1 Value limited by wire bonding
2 Garanted when external Rg=4.7 Ω and tf < tfmax
.
3 Starting TJ = 25°C, ID = 19A, VDD = 18V
4 Pulse width limited by safe operating area
5 Pulsed: pulse duration = 300µs, duty cycle 1.5%
4/11
STD16NF06
2 Electrical characteristics
2.1
Electrical chraracteristics (curves)
Figure 1. Safe Operating Area
Figure 2. Thermal Impedance
Figure 3. Output Characteristics
Figure 4. Transfer Characteristics
Figure 5. Transconductance
Figure 6. Static Drain-Source on Resistance
5/11
2 Electrical characteristics
STD16NF06
Figure 7. Gate Charge vs Gate-Source Voltage Figure 8. Capacitance Variations
Figure 9. Normalized Gate Threshold Voltage Figure 10. Normalized on Resistance vs
vs Temperature
Temperature
Figure 11. Source-drain Diode Forward
Characteristics
Figure 12. Normalized Breakdown Voltage vs
Temperature
6/11
STD16NF06
3 Test circuits
3
Test circuits
Figure 13. Switching Times Test Circuit For
Resistive Load
Figure 14. Gate Charge Test Circuit
Figure 15. Test Circuit For Inductive Load
Switching and Diode Recovery
Times
Figure 17. Unclamped Inductive Load Test
Circuit
Figure 16. Unclamped Inductive Waveform
7/11
4 Package mechanical data
STD16NF06
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in compliance
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are
available at: www.st.com
8/11
STD16NF06
4 Package mechanical data
TO-252 (DPAK) MECHANICAL DATA
mm
inch
DIM.
MIN.
2.2
TYP.
MAX.
2.4
MIN.
0.086
0.035
0.001
0.025
0.204
0.017
0.019
0.236
0.252
0.173
0.368
TYP.
MAX.
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.260
0.181
0.397
A
A1
A2
B
0.9
1.1
0.03
0.64
5.2
0.23
0.9
B2
C
5.4
0.45
0.48
6
0.6
C2
D
0.6
6.2
E
6.4
6.6
G
4.4
4.6
H
9.35
10.1
L2
L4
0.8
0.031
0.6
1
0.023
0.039
H
DETAIL "A"
D
L2
DETAIL "A"
L4
0068772-B
9/11
5 Revision History
STD16NF06
5
Revision History
Date
Revision
Description of changes
10-Jan-2006
1
First release
10/11
STD16NF06
5 Revision History
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners
© 2006 STMicroelectronics - All rights reserved
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11/11
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