STD6NC40 [STMICROELECTRONICS]
N-CHANNEL 400V - 0.75ohm - 5A - DPAK / IPAK PowerMesh⑩II MOSFET; N沟道400V - 0.75ohm - 5A - DPAK / IPAK PowerMesh⑩II MOSFET
| 型号： | STD6NC40 |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 400V - 0.75ohm - 5A - DPAK / IPAK PowerMesh⑩II MOSFET |
| 文件： | 总9页 (文件大小：274K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STD6NC40
N-CHANNEL 400V - 0.75Ω - 5A - DPAK / IPAK
PowerMesh™II MOSFET
TYPE
V
DSS
R
I
D
DS(on)
STD6NC40
400V
< 1 Ω
5A
■
■
■
■
■
TYPICAL R (on) = 0.75Ω
DS
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
3
3
2
1
1
DPAK
IPAK
■
ADD SUFFIX “-1” FOR ORDERING IN IPAK
DESCRIPTION
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
SWITH MODE LOW POWER SUPPLIES
(SMPS)
CFL
■
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
V
DS
Drain-source Voltage (V = 0)
400
GS
V
Drain-gate Voltage (R = 20 kΩ)
400
V
DGR
GS
V
GS
Gate- source Voltage
±30
V
I
Drain Current (continuos) at T = 25°C
5
A
D
C
I
Drain Current (continuos) at T = 100°C
3
A
D
C
I
( )
■
Drain Current (pulsed)
20
55
A
DM
P
Total Dissipation at T = 25°C
W
TOT
C
Derating Factor
0.44
W/°C
V/ns
°C
°C
dv/dt(1)
Peak Diode Recovery voltage slope
Storage Temperature
3
T
stg
–65 to 150
T
Max. Operating Junction Temperature
150
j
(1)I ≤5A, di/dt ≤100A/µs, V ≤ V
, T ≤ T
(BR)DSS j JMAX.
SD
DD
(•)Pulse width limited by safe operating area
March 2001
1/9
STD6NC40
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Thermal Resistance Junction-case Max
2.27
100
1.5
°C/W
°C/W
°C/W
°C
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
T
Maximum Lead Temperature For Soldering Purpose
275
l
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
Avalanche Current, Repetitive or Not-Repetitive
6
A
AR
(pulse width limited by T max)
j
E
Single Pulse Avalanche Energy
320
mJ
AS
(starting T = 25 °C, I = I , V = 50 V)
j
D
AR
DD
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
V
I
D
= 250 µA, V = 0
400
V
(BR)DSS
GS
Breakdown Voltage
I
Zero Gate Voltage
V
V
V
= Max Rating
1
µA
µA
nA
DSS
DS
Drain Current (V = 0)
GS
= Max Rating, T = 125 °C
50
DS
GS
C
I
Gate-body Leakage
= ±30V
±100
GSS
Current (V = 0)
DS
ON (1)
Symbol
Parameter
Test Conditions
Min.
Typ.
3
Max.
Unit
V
V
GS(th)
V
V
= V , I = 250µA
Gate Threshold Voltage
2
4
1
DS
GS
D
R
Static Drain-source On
Resistance
= 10V, I = 3 A
D
0.75
Ω
DS(on)
GS
I
On State Drain Current
V
V
> I
= 10V
x R
DS(on)max,
6
A
D(on)
DS
D(on)
GS
DYNAMIC
Symbol
Parameter
Test Conditions
x R
DS(on)max,
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
5.1
S
D(on)
I
D
=3A
C
C
V = 25V, f = 1 MHz, V = 0
DS GS
Input Capacitance
Output Capacitance
530
90
pF
pF
iss
oss
Reverse Transfer
Capacitance
C
rss
15
pF
2/9
STD6NC40
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
V
R
= 200V, I = 3A,
Turn-on Delay Time
11
ns
d(on)
DD
D
= 4.7Ω V = 10V
G
GS
t
Rise Time
15
ns
r
(see test circuit, Figure 3)
Q
V
V
= 320V, ID = 6A,
= 10V
23
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
18
4
8.5
nC
nC
nC
g
DD
Q
gs
GS
Q
gd
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Min.
Typ.
Max.
Unit
t
V
R
= 320V, I = 6A,
Off-voltage Rise Time
Fall Time
Cross-over Time
8
12
23
ns
ns
ns
r(Voff)
DD
D
t
f
= 4.7Ω, V = 10V
G
GS
t
c
(see test circuit, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Typ.
Max.
6
Unit
A
I
Source-drain Current
SD
I
(1)
(2)
Source-drain Current (pulsed)
Forward On Voltage
24
A
SDM
V
I
I
= 6A, V = 0
1.6
V
SD
SD
GS
t
= 6A, di/dt = 100A/µs,
= 100V, T = 150°C
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
280
1.4
10
ns
µC
A
rr
SD
Q
V
rr
RRM
DD
j
I
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedence
3/9
STD6NC40
Transfer Characteristics
Output Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/9
STD6NC40
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
STD6NC40
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/9
STD6NC40
TO-251 (IPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.2
TYP.
MAX.
2.4
MIN.
0.086
0.035
0.027
0.025
0.204
MAX.
A
A1
A3
B
0.094
0.043
0.051
0.031
0.212
0.033
0.9
1.1
0.7
1.3
0.64
5.2
0.9
B2
B3
B5
B6
C
5.4
0.85
0.3
0.012
0.95
0.6
0.6
6.2
6.6
4.6
16.3
9.4
1.2
1
0.037
0.023
0.023
0.244
0.260
0.181
0.641
0.370
0.047
0.039
0.45
0.48
6
0.017
0.019
0.236
0.252
0.173
0.626
0.354
0.031
C2
D
E
6.4
4.4
15.9
9
G
H
L
L1
L2
0.8
0.8
0.031
H
L
D
L2
L1
0068771-E
7/9
STD6NC40
TO-252 (DPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
TYP.
MAX.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
10.10
MIN.
0.087
0.035
0.001
0.025
0.204
0.018
0.019
0.236
0.252
0.173
0.368
MAX.
0.094
0.043
0.009
0.035
0.213
0.024
0.024
0.244
0.260
0.181
0.398
A
A1
A2
B
B2
C
C2
D
E
G
H
L2
L4
V2
0.8
0.031
0.60
0o
1.00
8o
0.024
0o
0.039
0o
P032P_B
8/9
STD6NC40
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2000 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
9/9
相关型号：
STD6NF10
N-CHANNEL 100V - 0.22 ohm - 6A IPAK/DPAK LOW GATE CHARGE STripFET⑩ POWER MOSFET
STMICROELECTR
STD6NF10T4
N-channel 100 V, 0.22 Ω, 6 A, DPAK, IPAK low gate charge STripFET? Power MOSFET
STMICROELECTR
STD6NF10_08
N-channel 100 V, 0.22 Ω, 6 A, DPAK, IPAK low gate charge STripFET? Power MOSFET
STMICROELECTR
STD6NK50Z
N-CHANNEL 500V - 0.93 ohm - 5.6A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH MOSFET
STMICROELECTR
STD6NK50ZT4
N-CHANNEL 500V - 0.93͐2;6; - 5.6A DPAK Zener-Protected SuperMESH™ MOSFET
STMICROELECTR
STD6NM60N
N-channel 600V - 0.85ヘ - 4.6A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh⑩ Power MOSFET
STMICROELECTR
STD6NM60N-1
N-channel 600V - 0.85ヘ - 4.6A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh⑩ Power MOSFET
STMICROELECTR
©2020 ICPDF网 联系我们和版权申明