STD7NS20-1
更新时间:2024-10-29 02:02:20
描述:N-CHANNEL 200V - 0.35ohm - 7A DPAK / IPAK MESH OVERLAY⑩ MOSFET
STD7NS20-1 概述
N-CHANNEL 200V - 0.35ohm - 7A DPAK / IPAK MESH OVERLAY⑩ MOSFET N沟道200V - 0.35ohm - 7A的DPAK / IPAK MESH OVERLAY⑩ MOSFET 功率场效应晶体管
STD7NS20-1 规格参数
是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-251AA | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.82 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 60 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 200 V |
最大漏极电流 (Abs) (ID): | 7 A | 最大漏极电流 (ID): | 7 A |
最大漏源导通电阻: | 0.4 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-251AA | JESD-30 代码: | R-PSIP-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 45 W |
最大脉冲漏极电流 (IDM): | 28 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
STD7NS20-1 数据手册
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STD7NS20-1
N-CHANNEL 200V - 0.35Ω - 7A DPAK / IPAK
MESH OVERLAY™ MOSFET
PRELIMINARY DATA
TYPE
V
DSS
R
I
D
DS(on)
STD7NS20
STD7NS20-1
200 V
200 V
< 0.40 Ω
< 0.40 Ω
7 A
7 A
■
■
■
■
■
TYPICAL R (on) = 0.35 Ω
DS
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
3
3
2
1
1
DPAK
IPAK
TO-252
TO-251
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company’s proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
HIGH CURRENT, HIGH SPEED SWITCHING
SWITH MODE POWER SUPPLIES (SMPS)
DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
200
Unit
V
V
DS
Drain-source Voltage (V = 0)
GS
V
Drain-gate Voltage (R = 20 kΩ)
200
V
DGR
GS
V
Gate- source Voltage
± 20
7
V
GS
I
Drain Current (continuos) at T = 25°C
A
D
C
I
Drain Current (continuos) at T = 100°C
4.4
A
D
C
I
( )
Drain Current (pulsed)
28
A
DM
P
TOT
Total Dissipation at T = 25°C
45
W
C
Derating Factor
0.37
5
W/°C
V/ns
°C
°C
dv/dt (1)
Peak Diode Recovery voltage slope
Storage Temperature
T
stg
–65 to 150
150
T
Max. Operating Junction Temperature
j
(1) I ≤ 7A, di/dt≤300 A/µs, V ≤ V
, Tj≤T
jMAX
SD
DD
(BR)DSS
(•)Pulse width limited by safe operating area
June 2003
1/8
STD7NS20 / STD7NS20-1
THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-case Max
2.7
100
275
°C/W
°C/W
°C
Thermal Resistance Junction-ambient Max
T
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
7
A
(pulse width limited by T max)
j
E
Single Pulse Avalanche Energy
60
mJ
AS
(starting T = 25 °C, I = I , V = 50 V)
j
D
AR
DD
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
V
I
= 250 µA, V = 0
200
V
(BR)DSS
D
GS
Breakdown Voltage
I
V
V
V
= Max Rating
DS
1
µA
µA
nA
DSS
Zero Gate Voltage
Drain Current (V = 0)
GS
= Max Rating, T = 125 °C
10
DS
GS
C
I
Gate-body Leakage
= ±20V
±100
GSS
Current (V = 0)
DS
ON (1)
Symbol
Parameter
Test Conditions
Min.
Typ.
3
Max.
4
Unit
V
V
R
V
V
= V , I = 250µA
Gate Threshold Voltage
2
GS(th)
DS
GS
GS
D
Static Drain-source On
Resistance
= 10V, I = 3.5 A
0.35
0.40
Ω
DS(on)
D
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
(1)
Forward Transconductance
V
> I
x R
DS(on)max,
4
S
fs
DS
D(on)
I
= 3.5 A
D
C
C
V
= 25V, f = 1 MHz, V = 0
DS GS
Input Capacitance
Output Capacitance
540
90
pF
pF
pF
iss
oss
C
rss
Reverse Transfer
Capacitance
35
2/8
STD7NS20 / STD7NS20-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
V
R
= 100 V, I = 3.5 A
Turn-on Delay Time
10
ns
d(on)
DD
D
= 4.7Ω V = 10 V
G
GS
t
Rise Time
15
ns
r
(see test circuit, Figure 3)
Q
V
V
= 160V, I = 18 A,
= 10V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
31
7.5
9
45
nC
nC
nC
g
DD
GS
D
Q
gs
Q
gd
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Min.
Typ.
Max.
Unit
t
Off-voltage Rise Time
Fall Time
Cross-over Time
V
clamp
= 160 V, I = 7 A,
12
12
25
ns
ns
ns
r(Voff)
D
t
f
R = 4.7Ω, V = 10V
G GS
(see test circuit, Figure 5)
t
c
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Typ.
Max.
7
Unit
A
I
Source-drain Current
SD
I
(2)
(1)
Source-drain Current (pulsed)
Forward On Voltage
28
A
SDM
V
I
I
= 7 A, V = 0
1.5
V
SD
SD
SD
GS
t
= 7 A, di/dt = 100A/µs
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
170
0.95
11
ns
µC
A
rr
V
= 50V, T = 150°C
j
DD
Q
rr
RRM
(see test circuit, Figure 5)
I
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3/8
STD7NS20 / STD7NS20-1
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
4/8
STD7NS20 / STD7NS20-1
TO-252 (DPAK) MECHANICAL DATA
mm
inch
DIM.
MIN.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
TYP.
MAX.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
10.10
MIN.
0.087
0.035
0.001
0.025
0.204
0.018
0.019
0.236
0.252
0.173
0.368
TYP.
MAX.
0.094
0.043
0.009
0.035
0.213
0.024
0.024
0.244
0.260
0.181
0.398
A
A1
A2
B
B2
C
C2
D
E
G
H
L2
L4
V2
0.8
0.031
0.60
0o
1.00
8o
0.024
0o
0.039
0o
P032P_B
5/8
STD7NS20 / STD7NS20-1
TO-251 (IPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
2.4
MIN.
0.086
0.035
0.027
0.025
0.204
MAX.
0.094
0.043
0.051
0.031
0.212
0.033
A
A1
A3
B
2.2
0.9
1.1
0.7
1.3
0.64
5.2
0.9
B2
B3
B5
B6
C
5.4
0.85
0.3
0.012
0.95
0.6
0.6
6.2
6.6
4.6
16.3
9.4
1.2
1
0.037
0.023
0.023
0.244
0.260
0.181
0.641
0.370
0.047
0.039
0.45
0.48
6
0.017
0.019
0.236
0.252
0.173
0.626
0.354
0.031
C2
D
E
6.4
4.4
15.9
9
G
H
L
L1
L2
0.8
0.8
0.031
H
L
D
L2
L1
0068771-E
6/8
STD7NS20 / STD7NS20-1
DPAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
All dimensions
are in millimeters
All dimensions are in millimeters
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
16.4
50
0.059
13.2 0.504 0.520
0.795
18.4 0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
TAPE MECHANICAL DATA
2500
mm
MIN. MAX. MIN. MAX.
6.8 0.267 0.275
10.4 10.6 0.409 0.417
12.1 0.476
inch
DIM.
A0
B0
B1
D
7
1.5
1.5
1.6 0.059 0.063
0.059
D1
E
1.65 1.85 0.065 0.073
7.4 7.6 0.291 0.299
2.55 2.75 0.100 0.108
F
K0
P0
P1
P2
R
3.9
7.9
1.9
40
4.1 0.153 0.161
8.1 0.311 0.319
2.1 0.075 0.082
1.574
W
15.7
16.3 0.618 0.641
* on sales type
7/8
STD7NS20 / STD7NS20-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
© http://www.st.com
8/8
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