STD7NS20-1

更新时间:2024-10-29 02:02:20
描述:N-CHANNEL 200V - 0.35ohm - 7A DPAK / IPAK MESH OVERLAY⑩ MOSFET

STD7NS20-1 概述

N-CHANNEL 200V - 0.35ohm - 7A DPAK / IPAK MESH OVERLAY⑩ MOSFET N沟道200V - 0.35ohm - 7A的DPAK / IPAK MESH OVERLAY⑩ MOSFET 功率场效应晶体管

STD7NS20-1 规格参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-251AA包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.82
Is Samacsys:N雪崩能效等级(Eas):60 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (Abs) (ID):7 A最大漏极电流 (ID):7 A
最大漏源导通电阻:0.4 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-251AAJESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):45 W
最大脉冲漏极电流 (IDM):28 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STD7NS20-1 数据手册

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STD7NS20  
STD7NS20-1  
N-CHANNEL 200V - 0.35- 7A DPAK / IPAK  
MESH OVERLAY™ MOSFET  
PRELIMINARY DATA  
TYPE  
V
DSS  
R
I
D
DS(on)  
STD7NS20  
STD7NS20-1  
200 V  
200 V  
< 0.40 Ω  
< 0.40 Ω  
7 A  
7 A  
TYPICAL R (on) = 0.35 Ω  
DS  
EXTREMELY HIGH dv/dt CAPABILITY  
100% AVALANCHE TESTED  
VERY LOW INTRINSIC CAPACITANCES  
ADD SUFFIX “T4” FOR ORDERING IN TAPE &  
REEL  
3
3
2
1
1
DPAK  
IPAK  
TO-252  
TO-251  
DESCRIPTION  
Using the latest high voltage MESH OVERLAY™  
process, STMicroelectronics has designed an ad-  
vanced family of power MOSFETs with outstanding  
performance. The new patented STrip layout cou-  
pled with the Company’s proprietary edge termina-  
tion structure, makes it suitable in coverters for  
lighting applications.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SWITH MODE POWER SUPPLIES (SMPS)  
DC-DC CONVERTERS FOR TELECOM,  
INDUSTRIAL, AND LIGHTING EQUIPMENT  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
200  
Unit  
V
V
DS  
Drain-source Voltage (V = 0)  
GS  
V
Drain-gate Voltage (R = 20 k)  
200  
V
DGR  
GS  
V
Gate- source Voltage  
± 20  
7
V
GS  
I
Drain Current (continuos) at T = 25°C  
A
D
C
I
Drain Current (continuos) at T = 100°C  
4.4  
A
D
C
I
( )  
Drain Current (pulsed)  
28  
A
DM  
P
TOT  
Total Dissipation at T = 25°C  
45  
W
C
Derating Factor  
0.37  
5
W/°C  
V/ns  
°C  
°C  
dv/dt (1)  
Peak Diode Recovery voltage slope  
Storage Temperature  
T
stg  
–65 to 150  
150  
T
Max. Operating Junction Temperature  
j
(1) I 7A, di/dt300 A/µs, V V  
, TjT  
jMAX  
SD  
DD  
(BR)DSS  
(•)Pulse width limited by safe operating area  
June 2003  
1/8  
STD7NS20 / STD7NS20-1  
THERMAL DATA  
Rthj-case  
Rthj-amb  
Thermal Resistance Junction-case Max  
2.7  
100  
275  
°C/W  
°C/W  
°C  
Thermal Resistance Junction-ambient Max  
T
Maximum Lead Temperature For Soldering Purpose  
l
AVALANCHE CHARACTERISTICS  
Symbol  
Parameter  
Max Value  
Unit  
I
AR  
Avalanche Current, Repetitive or Not-Repetitive  
7
A
(pulse width limited by T max)  
j
E
Single Pulse Avalanche Energy  
60  
mJ  
AS  
(starting T = 25 °C, I = I , V = 50 V)  
j
D
AR  
DD  
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)  
OFF  
Symbol  
Parameter  
Drain-source  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
V
I
= 250 µA, V = 0  
200  
V
(BR)DSS  
D
GS  
Breakdown Voltage  
I
V
V
V
= Max Rating  
DS  
1
µA  
µA  
nA  
DSS  
Zero Gate Voltage  
Drain Current (V = 0)  
GS  
= Max Rating, T = 125 °C  
10  
DS  
GS  
C
I
Gate-body Leakage  
= ±20V  
±100  
GSS  
Current (V = 0)  
DS  
ON (1)  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
3
Max.  
4
Unit  
V
V
R
V
V
= V , I = 250µA  
Gate Threshold Voltage  
2
GS(th)  
DS  
GS  
GS  
D
Static Drain-source On  
Resistance  
= 10V, I = 3.5 A  
0.35  
0.40  
DS(on)  
D
DYNAMIC  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
g
(1)  
Forward Transconductance  
V
> I  
x R  
DS(on)max,  
4
S
fs  
DS  
D(on)  
I
= 3.5 A  
D
C
C
V
= 25V, f = 1 MHz, V = 0  
DS GS  
Input Capacitance  
Output Capacitance  
540  
90  
pF  
pF  
pF  
iss  
oss  
C
rss  
Reverse Transfer  
Capacitance  
35  
2/8  
STD7NS20 / STD7NS20-1  
ELECTRICAL CHARACTERISTICS (CONTINUED)  
SWITCHING ON  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
t
V
R
= 100 V, I = 3.5 A  
Turn-on Delay Time  
10  
ns  
d(on)  
DD  
D
= 4.7V = 10 V  
G
GS  
t
Rise Time  
15  
ns  
r
(see test circuit, Figure 3)  
Q
V
V
= 160V, I = 18 A,  
= 10V  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
31  
7.5  
9
45  
nC  
nC  
nC  
g
DD  
GS  
D
Q
gs  
Q
gd  
SWITCHING OFF  
Symbol  
Parameter  
Test Conditions  
Min.  
Min.  
Typ.  
Max.  
Unit  
t
Off-voltage Rise Time  
Fall Time  
Cross-over Time  
V
clamp  
= 160 V, I = 7 A,  
12  
12  
25  
ns  
ns  
ns  
r(Voff)  
D
t
f
R = 4.7Ω, V = 10V  
G GS  
(see test circuit, Figure 5)  
t
c
SOURCE DRAIN DIODE  
Symbol  
Parameter  
Test Conditions  
Typ.  
Max.  
7
Unit  
A
I
Source-drain Current  
SD  
I
(2)  
(1)  
Source-drain Current (pulsed)  
Forward On Voltage  
28  
A
SDM  
V
I
I
= 7 A, V = 0  
1.5  
V
SD  
SD  
SD  
GS  
t
= 7 A, di/dt = 100A/µs  
Reverse Recovery Time  
Reverse Recovery Charge  
Reverse Recovery Current  
170  
0.95  
11  
ns  
µC  
A
rr  
V
= 50V, T = 150°C  
j
DD  
Q
rr  
RRM  
(see test circuit, Figure 5)  
I
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.  
2. Pulse width limited by safe operating area.  
3/8  
STD7NS20 / STD7NS20-1  
Fig. 1: Unclamped Inductive Load Test Circuit  
Fig. 2: Unclamped Inductive Waveform  
Fig. 3: Switching Times Test Circuit For  
Fig. 4: Gate Charge test Circuit  
Resistive Load  
Fig. 5: Test Circuit For Inductive Load Switching  
And Diode Recovery Times  
4/8  
STD7NS20 / STD7NS20-1  
TO-252 (DPAK) MECHANICAL DATA  
mm  
inch  
DIM.  
MIN.  
2.20  
0.90  
0.03  
0.64  
5.20  
0.45  
0.48  
6.00  
6.40  
4.40  
9.35  
TYP.  
MAX.  
2.40  
1.10  
0.23  
0.90  
5.40  
0.60  
0.60  
6.20  
6.60  
4.60  
10.10  
MIN.  
0.087  
0.035  
0.001  
0.025  
0.204  
0.018  
0.019  
0.236  
0.252  
0.173  
0.368  
TYP.  
MAX.  
0.094  
0.043  
0.009  
0.035  
0.213  
0.024  
0.024  
0.244  
0.260  
0.181  
0.398  
A
A1  
A2  
B
B2  
C
C2  
D
E
G
H
L2  
L4  
V2  
0.8  
0.031  
0.60  
0o  
1.00  
8o  
0.024  
0o  
0.039  
0o  
P032P_B  
5/8  
STD7NS20 / STD7NS20-1  
TO-251 (IPAK) MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
TYP.  
MAX.  
2.4  
MIN.  
0.086  
0.035  
0.027  
0.025  
0.204  
MAX.  
0.094  
0.043  
0.051  
0.031  
0.212  
0.033  
A
A1  
A3  
B
2.2  
0.9  
1.1  
0.7  
1.3  
0.64  
5.2  
0.9  
B2  
B3  
B5  
B6  
C
5.4  
0.85  
0.3  
0.012  
0.95  
0.6  
0.6  
6.2  
6.6  
4.6  
16.3  
9.4  
1.2  
1
0.037  
0.023  
0.023  
0.244  
0.260  
0.181  
0.641  
0.370  
0.047  
0.039  
0.45  
0.48  
6
0.017  
0.019  
0.236  
0.252  
0.173  
0.626  
0.354  
0.031  
C2  
D
E
6.4  
4.4  
15.9  
9
G
H
L
L1  
L2  
0.8  
0.8  
0.031  
H
L
D
L2  
L1  
0068771-E  
6/8  
STD7NS20 / STD7NS20-1  
DPAK FOOTPRINT  
TUBE SHIPMENT (no suffix)*  
All dimensions  
are in millimeters  
All dimensions are in millimeters  
TAPE AND REEL SHIPMENT (suffix ”T4”)*  
REEL MECHANICAL DATA  
mm  
MIN. MAX. MIN. MAX.  
330 12.992  
inch  
DIM.  
A
B
C
D
G
N
T
1.5  
12.8  
20.2  
16.4  
50  
0.059  
13.2 0.504 0.520  
0.795  
18.4 0.645 0.724  
1.968  
22.4  
0.881  
BASE QTY  
BULK QTY  
2500  
TAPE MECHANICAL DATA  
2500  
mm  
MIN. MAX. MIN. MAX.  
6.8 0.267 0.275  
10.4 10.6 0.409 0.417  
12.1 0.476  
inch  
DIM.  
A0  
B0  
B1  
D
7
1.5  
1.5  
1.6 0.059 0.063  
0.059  
D1  
E
1.65 1.85 0.065 0.073  
7.4 7.6 0.291 0.299  
2.55 2.75 0.100 0.108  
F
K0  
P0  
P1  
P2  
R
3.9  
7.9  
1.9  
40  
4.1 0.153 0.161  
8.1 0.311 0.319  
2.1 0.075 0.082  
1.574  
W
15.7  
16.3 0.618 0.641  
* on sales type  
7/8  
STD7NS20 / STD7NS20-1  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the  
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from  
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications  
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information  
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or  
systems without express written approval of STMicroelectronics.  
© The ST logo is a registered trademark of STMicroelectronics  
© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco  
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.  
© http://www.st.com  
8/8  

STD7NS20-1 替代型号

型号 制造商 描述 替代类型 文档
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