STF24NM65N [STMICROELECTRONICS]

N-channel 650 V - 0.16 Ω - 19 A - TO-220 - TO-220FP - D2PAK I2PAK - TO-247 second generation MDmesh™ Power MOSFET; N沟道650 V - 0.16 Ω - 19 A - TO- 220 - TO- 220FP - D2PAK I2PAK - TO-247第二代的MDmesh ™功率MOSFET
STF24NM65N
型号: STF24NM65N
厂家: ST    ST
描述:

N-channel 650 V - 0.16 Ω - 19 A - TO-220 - TO-220FP - D2PAK I2PAK - TO-247 second generation MDmesh™ Power MOSFET
N沟道650 V - 0.16 Ω - 19 A - TO- 220 - TO- 220FP - D2PAK I2PAK - TO-247第二代的MDmesh ™功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
文件: 总19页 (文件大小:553K)
中文:  中文翻译
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STW24NM65N-STI24NM65N-STF24NM65N  
STB24NM65N - STP24NM65N  
N-channel 650 V - 0.16 - 19 A - TO-220 - TO-220FP - D2PAK  
I2PAK - TO-247 second generation MDmesh™ Power MOSFET  
Features  
VDSS  
(@TJmax)  
Type  
RDS(on) max  
ID  
3
2
3
1
2
1
STB24NM65N  
STI24NM65N  
STF24NM65N  
STP24NM65N  
STW24NM65N  
710 V  
710 V  
710 V  
710 V  
710 V  
< 0.19  
< 0.19 Ω  
< 0.19 Ω  
< 0.19 Ω  
< 0.19 Ω  
19 A  
19 A  
19 A(1)  
PAK  
TO-220  
3
1
19 A  
PAK  
19 A  
3
3
2
1. Limited only by maximum temperature allowed  
2
1
1
TO-220FP  
100% avalanche tested  
TO-247  
Low input capacitance and gate charge  
Low gate input resistance  
Figure 1.  
Internal schematic diagram  
Application  
Switching applications  
Description  
This series of devices is designed using the  
second generation of MDmesh™ technology. This  
revolutionary Power MOSFET associates a new  
vertical structure to the company’s strip layout to  
yield one of the world’s lowest on-resistance and  
gate charge. It is therefore suitable for the most  
demanding high efficiency converters.  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
STB24NM65N  
STI24NM65N  
STF24NM65N  
STP24NM65N  
STW24NM65N  
24NM65N  
24NM65N  
24NM65N  
24NM65N  
24NM65N  
PAK  
PAK  
Tape and reel  
Tube  
TO-220FP  
TO-220  
TO-247  
Tube  
Tube  
Tube  
February 2008  
Rev 1  
1/19  
www.st.com  
19  
Contents  
STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N  
Contents  
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
2.1  
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
3
4
5
6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17  
2/19  
STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N  
Electrical ratings  
1
Electrical ratings  
Table 2.  
Symbol  
Absolute maximum ratings  
Value  
Parameter  
Unit  
TO-220/I²PAK  
TO-247/D²PAK  
TO-220FP  
VDS  
VGS  
ID  
Drain-source voltage (VGS=0)  
650  
25  
V
V
Gate-source voltage  
19(1)  
A
Drain current (continuous) at TC = 25 °C  
Drain current (continuous) at TC = 100 °C  
19  
12  
12 (1)  
A
ID  
(2)  
76(1)  
A
Drain current (pulsed)  
76  
IDM  
PTOT  
Total dissipation at TC = 25 °C  
Peak diode recovery voltage slope  
160  
40  
W
dv/dt (3)  
15  
V/ns  
Insulation withstand voltage (RMS) from all  
three leads to external heat sink  
VISO  
--  
2500  
V
(t=1 s;TC=25 °C)  
Tstg  
TJ  
Storage temperature  
-55 to 150  
150  
°C  
°C  
Max. operating junction temperature  
1. Limited only by maximum temperature allowed  
2. Pulse width limited by safe operating area  
3. ISD 19 A, di/dt 400 A/µs, VDD = 80% V(BR)DSS  
Table 3.  
Symbol  
Thermal data  
Parameter  
TO-220 I²PAK TO-247 PAK TO-220FP Unit  
Thermal resistance junction-  
case max  
Rthj-case  
Rthj-amb  
Rthj-pcb  
Tl  
0.78  
3.1  
62.5  
--  
°C/W  
°C/W  
°C/W  
°C  
Thermal resistance junction-  
amb max  
62.5  
50  
--  
--  
Thermal resistance junction-  
pcb max  
--  
--  
30  
Maximum lead temperature  
for soldering purposes  
300  
3/19  
Electrical ratings  
STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N  
Table 4.  
Symbol  
Avalanche characteristics  
Parameter  
Max value  
Unit  
Avalanche current, repetitive or not-repetitive  
(pulse width limited by TJ max)  
IAS  
6
A
Single pulse avalanche energy  
EAS  
500  
mJ  
(starting TJ=25 °C, ID=IAS, VDD= 50 V)  
4/19  
STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N  
Electrical characteristics  
2
Electrical characteristics  
(T  
=25 °C unless otherwise specified)  
CASE  
Table 5.  
Symbol  
On/off states  
Parameter  
Test conditions  
Min. Typ. Max. Unit  
Drain-source  
V(BR)DSS  
ID = 1 mA, VGS = 0  
650  
V
breakdown voltage  
V
DD= 520 V, ID=19 A,  
dv/dt (1) Drain source voltage slope  
35  
V/ns  
VGS=10 V  
Zero gate voltage  
IDSS  
V
DS = max rating  
1
µA  
µA  
drain current (VGS = 0)  
VDS = max rating, @125 °C  
100  
Gate-body leakage  
IGSS  
VGS  
VDS = VGS, ID = 250 µA  
GS = 10 V, ID = 9.5 A  
=
20 V  
100  
4
nA  
V
current (VDS = 0)  
VGS(th) Gate threshold voltage  
2
3
Static drain-source on  
resistance  
RDS(on)  
V
0.16 0.19  
1. Characteristic value at turn off on inductive load  
Table 6.  
Symbol  
Dynamic  
Parameter  
Test conditions  
Min. Typ. Max. Unit  
(1)  
gfs  
Forward transconductance VDS= 15 V I = 9.5 A  
14  
S
, D  
pF  
pF  
pF  
Input capacitance  
Ciss  
Coss  
Crss  
2500  
120  
10  
VDS = 50 V, f = 1 MHz,  
VGS = 0  
Output capacitance  
Reverse transfer  
capacitance  
Equivalent output  
capacitance  
(2)  
Coss eq  
VGS = 0, VDS = 0 to 520 V  
310  
pF  
Qg  
Qgs  
Qgd  
Total gate charge  
Gate-source charge  
Gate-drain charge  
VDD = 520 V, ID = 19 A,  
GS = 10 V,  
70  
10  
40  
nC  
nC  
nC  
V
(see Figure 19)  
f=1 MHz gate DC bias = 0  
Test signal level = 20 mV  
open drain  
RG  
Gate input resistance  
2.5  
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%  
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS  
increases from 0 to 80% VDSS  
5/19  
Electrical characteristics  
STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N  
Table 7.  
Symbol  
Switching times  
Parameter  
Turn-on delay time  
Test conditions  
Min Typ Max Unit  
td(on)  
tr  
td(off)  
tf  
25  
10  
80  
20  
ns  
ns  
ns  
ns  
VDD =325 V, ID = 9.5 A  
RG = 4.7 VGS = 10 V  
(see Figure 18)  
Rise time  
Turn-off delay time  
Fall time  
Table 8.  
Symbol  
Source drain diode  
Parameter  
Test conditions  
Min Typ Max Unit  
ISD  
Source-drain current  
19  
76  
A
A
(1)  
ISDM  
Source-drain current (pulsed)  
(2)  
VSD  
Forward on voltage  
ISD = 19 A, VGS = 0  
1.3  
V
trr  
Reverse recovery time  
Reverse recovery charge  
Reverse recovery current  
ISD = 19 A, di/dt = 100 A/µs  
VDD = 100 V  
460  
7
ns  
µC  
A
Qrr  
IRRM  
(see Figure 20)  
30  
trr  
Reverse recovery time  
Reverse recovery charge  
Reverse recovery current  
ISD = 19 A, di/dt = 100 A/µs  
VDD = 100 V, TJ = 150 °C  
(see Figure 20)  
620  
9
ns  
µC  
A
Qrr  
IRRM  
29  
1. Pulse width limited by safe operating area  
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%  
6/19  
STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N  
Electrical characteristics  
2.1  
Electrical characteristics (curves)  
Figure 2. Safe operating area for TO-220 -  
Figure 3. Thermal impedance for TO-220 -  
2
2
2
2
D PAK - I PAK  
D PAK - I PAK  
Figure 4. Safe operating area for TO-220FP  
Figure 5. Thermal impedance for TO-220FP  
Figure 6. Safe operating area for TO-247  
Figure 7. Thermal impedance for TO-247  
7/19  
Electrical characteristics  
STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N  
Figure 9. Transfer characteristics  
Figure 8. Output characteristics  
Figure 10. Transconductance  
Figure 11. Static drain-source on resistance  
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations  
8/19  
STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N  
Electrical characteristics  
Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs  
vs temperature  
temperature  
Figure 16. Source-drain diode forward  
characteristics  
Figure 17. Normalized B  
vs temperature  
VDSS  
9/19  
Test circuit  
STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N  
3
Test circuit  
Figure 18. Switching times test circuit for  
resistive load  
Figure 19. Gate charge test circuit  
Figure 20. Test circuit for inductive load  
switching and diode recovery times  
Figure 21. Unclamped Inductive load test  
circuit  
Figure 22. Unclamped inductive waveform  
Figure 23. Switching time waveform  
10/19  
STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N  
Package mechanical data  
4
Package mechanical data  
In order to meet environmental requirements, ST offers these devices in ECOPACK®  
packages. These packages have a Lead-free second level interconnect. The category of  
second level interconnect is marked on the package and on the inner box label, in  
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering  
conditions are also marked on the inner box label. ECOPACK is an ST trademark.  
ECOPACK specifications are available at: www.st.com  
11/19  
Package mechanical data  
STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N  
TO-220 mechanical data  
mm  
Typ  
inch  
Typ  
Dim  
Min  
Max  
Min  
Max  
A
b
4.40  
0.61  
1.14  
0.49  
15.25  
4.60  
0.88  
1.70  
0.70  
15.75  
0.173  
0.024  
0.044  
0.019  
0.6  
0.181  
0.034  
0.066  
0.027  
0.62  
b1  
c
D
D1  
E
1.27  
0.050  
10  
10.40  
2.70  
5.15  
1.32  
6.60  
2.72  
14  
0.393  
0.094  
0.194  
0.048  
0.244  
0.094  
0.511  
0.137  
0.409  
0.106  
0.202  
0.051  
0.256  
0.107  
0.551  
0.154  
e
2.40  
4.95  
1.23  
6.20  
2.40  
13  
e1  
F
H1  
J1  
L
L1  
L20  
L30  
P  
Q
3.50  
3.93  
16.40  
0.645  
28.90  
1.137  
3.75  
3.85  
2.95  
0.147  
0.104  
0.151  
0.116  
2.65  
12/19  
STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N  
Package mechanical data  
TO-220FP mechanical data  
mm.  
Typ.  
inch  
DIM.  
Min.  
4.4  
Max.  
4.6  
2.7  
2.75  
0.7  
1
Min.  
0.173  
0.098  
0.098  
0.017  
0.030  
0.045  
0.045  
0.195  
0.094  
0.393  
Typ.  
Max.  
0.181  
0.106  
0.108  
0.027  
0.039  
0.067  
0.067  
0.204  
0.106  
0.409  
A
B
2.5  
D
2.5  
E
0.45  
0.75  
1.15  
1.15  
4.95  
2.4  
F
F1  
F2  
G
1.7  
1.7  
5.2  
2.7  
10.4  
G1  
H
10  
L2  
L3  
L4  
L5  
L6  
L7  
Ø
16  
0.630  
28.6  
9.8  
2.9  
15.9  
9
30.6  
10.6  
3.6  
1.126  
.0385  
0.114  
0.626  
0.354  
0.118  
1.204  
0.417  
0.141  
0.645  
0.366  
0.126  
16.4  
9.3  
3
3.2  
L3  
L6  
L7  
1
2 3  
L5  
L2  
L4  
13/19  
Package mechanical data  
STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N  
TO-262 mechanical data  
mm  
Typ  
inch  
Typ  
Dim  
Min  
Max  
Min  
Max  
A
A1  
b
4.40  
2.40  
0.61  
1.14  
0.49  
1.23  
8.95  
2.40  
4.95  
10  
4.60  
2.72  
0.88  
1.70  
0.70  
1.32  
9.35  
2.70  
5.15  
10.40  
14  
0.173  
0.094  
0.024  
0.044  
0.019  
0.048  
0.352  
0.094  
0.194  
0.393  
0.511  
0.137  
0.050  
0.181  
0.107  
0.034  
0.066  
0.027  
0.052  
0.368  
0.106  
0.202  
0.410  
0.551  
0.154  
0.055  
b1  
c
c2  
D
e
e1  
E
L
13  
L1  
L2  
3.50  
1.27  
3.93  
1.40  
14/19  
STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N  
Package mechanical data  
PAK (TO-263) mechanical data  
mm  
Typ  
inch  
Dim  
Min  
Max  
Min  
Typ  
Max  
A
A1  
b
4.40  
0.03  
0.70  
1.14  
0.45  
1.23  
8.95  
7.50  
10  
4.60  
0.23  
0.93  
1.70  
0.60  
1.36  
9.35  
0.173  
0.001  
0.027  
0.045  
0.017  
0.048  
0.352  
0.295  
0.394  
0.334  
0.181  
0.009  
0.037  
0.067  
0.024  
0.053  
0.368  
b2  
c
c2  
D
D1  
E
10.40  
0.409  
E1  
e
8.50  
2.54  
0.1  
e1  
H
4.88  
15  
5.28  
15.85  
2.69  
2.79  
1.40  
1.75  
0.192  
0.590  
0.099  
0.090  
0.05  
0.208  
0.624  
0.106  
0.110  
0.055  
0.069  
J1  
L
2.49  
2.29  
1.27  
1.30  
L1  
L2  
R
0.051  
0.4  
0.016  
V2  
0°  
8°  
0°  
8°  
0079457_M  
15/19  
Package mechanical data  
STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N  
TO-247 Mechanical data  
mm.  
Dim.  
Min.  
Typ  
Max.  
A
A1  
b
4.85  
5.15  
2.20  
1.0  
2.60  
1.40  
2.40  
3.40  
b1  
b2  
c
2.0  
3.0  
0.40  
19.85  
15.45  
0.80  
D
20.15  
15.75  
E
e
5.45  
18.50  
5.50  
L
14.20  
14.80  
4.30  
L1  
L2  
øP  
øR  
S
3.70  
3.55  
3.65  
4.50  
5.50  
16/19  
STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N  
Packaging mechanical data  
5
Packaging mechanical data  
2
D PAK FOOTPRINT  
TAPE AND REEL SHIPMENT  
REEL MECHANICAL DATA  
mm  
MIN. MAX. MIN. MAX.  
330 12.992  
inch  
DIM.  
A
B
C
D
G
N
T
1.5  
12.8  
20.2  
24.4  
100  
0.059  
13.2 0.504 0.520  
0795  
26.4 0.960 1.039  
3.937  
30.4  
1.197  
BASE QTY  
BULK QTY  
1000  
TAPE MECHANICAL DATA  
1000  
mm  
inch  
DIM.  
MIN. MAX. MIN. MAX.  
10.5 10.7 0.413 0.421  
15.7 15.9 0.618 0.626  
A0  
B0  
D
1.5  
1.6 0.059 0.063  
D1  
E
1.59 1.61 0.062 0.063  
1.65 1.85 0.065 0.073  
F
11.4  
4.8  
3.9  
11.9  
1.9  
50  
11.6 0.449 0.456  
5.0 0.189 0.197  
4.1 0.153 0.161  
12.1 0.468 0.476  
2.1 0.075 0.082  
1.574  
K0  
P0  
P1  
P2  
R
T
0.25 0.35 0.0098 0.0137  
23.7 24.3 0.933 0.956  
W
* on sales type  
17/19  
Revision history  
STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N  
6
Revision history  
Table 9.  
Date  
14-Feb-2008  
Document revision history  
Revision  
Changes  
1
First release  
18/19  
STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N  
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相关型号:

STF25A60

Bi-Directional Triode Thyristor
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STF25A60

Bi-Directional Triode Thyristor
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STF25NM50N

N-CHANNEL 500V 0.11ohm - 22 A TO-220/FP/D/IPAK/TO-247 SECOND GENERATION MDmesh MOSFET
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STF25NM60N

N-CHANNEL 600V 0.140-20A TO-220/FP/DAK/TO-247 SECOND GENERATION MDmesh MOSFET
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STF25NM60ND

N-channel 600 V, 0.13 Ω, 21 A FDmesh? II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247
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STF26NM60N

N-channel 600 V, 0.135 ohm typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages
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STF26NM60ND

N-channel 600 V, 0.145 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220FP package
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STF28-461

EMI INPUT FILTER 28 VOLT INPUT
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STF28-461/HH

STF28-461 EMI Input Filters
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STF28-461/KH

STF28-461 EMI Input Filters
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STF28-461HH

STF28-461 EMI Input Filters
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STF2818X0504-A

Stepping Motor
ETC