STGB3NC120HDT4 [STMICROELECTRONICS]
Very soft ultrafast recovery anti-parallel diode;
| 型号： | STGB3NC120HDT4 |
| 厂家： | 
ST |
| 描述： | Very soft ultrafast recovery anti-parallel diode 瞄准线 功率控制 晶体管 |
| 文件： | 总16页 (文件大小：769K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STGB3NC120HD
STGF3NC120HD, STGP3NC120HD
7 A, 1200 V very fast IGBT with ultrafast diode
Features
TAB
■ High voltage capability
■ High speed
■ Very soft ultrafast recovery anti-parallel diode
3
3
2
2
1
1
Applications
TO-220FP
TO-220
■ Home appliance
■ Lighting
TAB
3
1
Description
D²PAK
This high voltage and very fast IGBT shows an
excellent trade-off between low conduction losses
and fast switching performance. It is designed in
PowerMESH™ technology combined with high
voltage ultrafast diode.
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Order codes
Marking
Packages
D²PAK
Packaging
STGB3NC120HDT4
STGF3NC120HD
STGP3NC120HD
GB3NC120HD
GF3NC120HD
GP3NC120HD
Tape and reel
Tube
TO-220FP
TO-220
Tube
January 2011
Doc ID 11089 Rev 4
1/16
www.st.com
16
Contents
STGB3NC120HD, STGF3NC120HD, STGP3NC120HD
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
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Doc ID 11089 Rev 4
STGB3NC120HD, STGF3NC120HD, STGP3NC120HD
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value
Parameter
Unit
TO-220FP
TO-220/D²PAK
VCES
Collector-emitter voltage (VGE = 0)
Continuous collector current at TC = 25 °C
Continuous collector current at TC = 100 °C
Turn-off latching current
1200
V
A
A
A
A
V
A
(1)
IC
6
3
14
7
(1)
IC
(2)
ICL
14
20
20
3
(3)
ICP
Pulsed collector current
VGE
IF
Gate-emitter voltage
Diode RMS forward current at TC = 25 °C
Surge non repetitive forward current
tp=10 ms sinusoidal
IFSM
PTOT
VISO
TJ
12
A
W
V
Total dissipation at TC = 25 °C
25
75
Insulation withstand voltage (RMS) from all
three leads to external heat sink
2500
Operating junction temperature
-55 to 150
°C
1. Calculated according to the iterative formula:
T
j(max) – TC
IC(TC) = -------------------------------------------------------------------------------------------------------
Rthj – c × VCE(sat)(max)(Tj(max), IC(TC))
2. Vclamp = 80 % VCES, Tj = 150 °C, RG = 10 Ω, VGE = 15 V
3. Pulse width limited by maximum junction temperature and turn-off within RBSOA
Table 3.
Symbol
Thermal data
Value
Parameter
Unit
TO-220FP
TO-220/D²PAK
Thermal resistance junction-case IGBT
Thermal resistance junction-case (diode)
Thermal resistance junction-ambient
5
1.65
°C/W
°C/W
°C/W
RthJC
RthJA
3.5
62.5
Doc ID 11089 Rev 4
3/16
Electrical characteristics
STGB3NC120HD, STGF3NC120HD, STGP3NC120HD
2
Electrical characteristics
T = 25 °C unless otherwise specified.
J
Table 4.
Symbol
Static electrical characteristics
Parameter
Test conditions
Min. Typ. Max. Unit
Collector-emitter
V(BR)CES breakdown voltage
(VGE = 0)
IC = 1 mA
1200
V
VGE= 15 V, IC= 3 A
2.3
2.2
2.8
5
V
V
Collector-emitter saturation
voltage
VCE(sat)
VGE= 15 V, IC= 3 A, TJ=125 °C
VGE(th) Gate threshold voltage
VCE= VGE, IC= 250µA
2
V
VCE = 1200 V
50
1
µA
Collector cut-off current
(VGE = 0)
ICES
VCE = 1200 V, TJ=125 °C
mA
Gate-emitter leakage
IGES
VGE = 20 V
100 nA
S
current (VCE = 0)
(1)
gfs
Forward transconductance VCE = 25 V I = 3 A
4
, C
1. Pulse duration: 300 µs, duty cycle 1.5%
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
Input capacitance
Cies
Coes
Cres
470
45
6
pF
pF
pF
Output capacitance
VCE = 25 V, f = 1 MHz, VGE=0
-
-
-
-
Reverse transfer
capacitance
Qg
Qge
Qgc
Total gate charge
24
3
nC
nC
nC
VCE = 960 V,
Gate-emitter charge
Gate-collector charge
IC= 3 A,VGE=15 V
10
4/16
Doc ID 11089 Rev 4
STGB3NC120HD, STGF3NC120HD, STGP3NC120HD
Electrical characteristics
Min. Typ. Max. Unit
Table 6.
Symbol
Switching on/off (inductive load)
Parameter
Test conditions
td(on)
tr
Turn-on delay time
Current rise time
15
3.5
880
ns
ns
VCC = 800 V, IC = 3 A
-
-
-
-
-
-
-
-
RG= 10 Ω, VGE= 15 V,
(see Figure 20)
(di/dt)on Turn-on current slope
A/µs
td(on)
tr
Turn-on delay time
Current rise time
VCC = 800 V, IC = 3 A
RG= 10 Ω, VGE= 15 V,
TJ= 125 °C (see Figure 20)
14.5
4
ns
ns
(di/dt)on Turn-on current slope
770
A/µs
tr(Voff)
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 800 V, IC = 3 A
RG= 10 Ω, VGE= 15 V,
(see Figure 20)
72
ns
ns
ns
td(off
)
118
250
tf
tr(Voff)
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 800 V, IC = 3 A
RG= 10 Ω, VGE= 15 V,
TJ= 125 °C (see Figure 20)
132
210
470
ns
ns
ns
td(off
)
tf
Table 7.
Symbol
Switching energy (inductive load)
Parameter Test conditions
Min. Typ. Max. Unit
Eon (1) Turn-on switching losses
VCC = 800 V, IC = 3 A
RG= 10 Ω, VGE= 15 V,
(see Figure 20)
236
290
526
µJ
µJ
µJ
(2)
Eoff
Turn-off switching losses
Total switching losses
-
-
-
-
Ets
Eon (1) Turn-on switching losses
VCC = 800 V, IC = 3 A
RG= 10 Ω, VGE= 15 V,
TJ= 125 °C (see Figure 20)
360
620
980
µJ
µJ
µJ
(2)
Eoff
Turn-off switching losses
Total switching losses
Ets
1. Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in
a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25 °C and 125 °C)
2. Turn-off losses include also the tail of the collector current
Table 8.
Symbol
Collector-emitter diode
Parameter
Test conditions
IF = 1.5 A
Min. Typ. Max. Unit
1.6
1.3
2.0
V
V
VF
Forward on-voltage
-
-
IF = 1.5 A, TJ = 125 °C
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
IF = 3 A, VR = 40 V,
di/dt = 100 A/µs
(see Figure 23)
51
85
ns
nC
A
Qrr
Irrm
3.3
IF = 3 A, VR = 40 V,
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
64
133
4.2
ns
nC
A
TJ = 125 °C,
di/dt = 100 A/µs
Qrr
Irrm
-
(see Figure 23)
Doc ID 11089 Rev 4
5/16
Electrical characteristics
STGB3NC120HD, STGF3NC120HD, STGP3NC120HD
2.1
Electrical characteristics (curves)
Figure 2.
Output characteristics
Figure 3.
Transfer characteristics
Figure 4.
Transconductance
Figure 5.
Collector-emitter on voltage vs.
temperature
Figure 6.
Collector-emitter on voltage vs.
collector current
Figure 7.
Normalized gate threshold voltage
vs. temperature
6/16
Doc ID 11089 Rev 4
STGB3NC120HD, STGF3NC120HD, STGP3NC120HD
Electrical characteristics
Figure 8.
Normalized breakdown voltage vs. Figure 9.
temperature
Gate charge vs. gate-source
voltage
Figure 10. Capacitance variations
Figure 11. Switching losses vs. temperature
Figure 12. Switching losses vs. gate
resistance
Figure 13. Switching losses vs. collector
current
Doc ID 11089 Rev 4
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Electrical characteristics
STGB3NC120HD, STGF3NC120HD, STGP3NC120HD
Figure 14. Collector-emitter diode
characteristics
Figure 15. Power losses @ I = 3 A
C
Figure 16. Power losses @ I = 2 A
Figure 17. Thermal impedance for TO-220
C
ZTH_TO-220
K
δ=0.5
0.2
0.1
10-1
0.05
0.02
0.01
single pulse
10-2
10-5
10-4
10-3
10-1
10-2
tp(s)
Figure 18. Turn-off SOA
Figure 19. Thermal impedance for TO-220FP
Zth_TO-220FP
K
δ=0.5
0.2
0.1
10-1
0.05
0.02
0.01
Zth=k*Rthj-c
δ=tp/τ
10-2
tp
Single pulse
τ
10-3
10-5
10-2
10-4
10-1
10-3
p(s)
t
8/16
Doc ID 11089 Rev 4
STGB3NC120HD, STGF3NC120HD, STGP3NC120HD
Test circuit
3
Test circuit
Figure 20. Test circuit for inductive load
switching
Figure 21. Gate charge test circuit
AM01504v1
AM01505v1
Figure 22. Switching waveform
Figure 23. Diode recovery time waveform
Qrr
90%
di/dt
10%
VG
IF
trr
90%
10%
ta
tb
VCE
Tr(Voff)
Tcross
t
90%
IRRM
IRRM
10%
IC
Td(off)
Toff
Td(on)
Ton
Tf
Tr(Ion)
VF
dv/dt
AM01506v1
AM01507v1
Doc ID 11089 Rev 4
9/16
Package mechanical data
STGB3NC120HD, STGF3NC120HD, STGP3NC120HD
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Table 9.
Dim.
D²PAK (TO-263) mechanical data
Min.
mm
Typ.
Max.
A
A1
b
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
4.60
0.23
0.93
1.70
0.60
1.36
9.35
b2
c
c2
D
D1
E
10.40
E1
e
8.50
2.54
e1
H
4.88
15
5.28
15.85
2.69
2.79
1.40
1.75
J1
L
2.49
2.29
1.27
1.30
L1
L2
R
0.4
V2
0°
8°
10/16
Doc ID 11089 Rev 4
STGB3NC120HD, STGF3NC120HD, STGP3NC120HD
D²PAK (TO-263) drawing
Package mechanical data
0079457_R
Doc ID 11089 Rev 4
11/16
Package mechanical data
STGB3NC120HD, STGF3NC120HD, STGP3NC120HD
Table 10. TO-220FP mechanical data
Dim.
mm
Min.
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
Figure 24. TO-220FP drawing
L7
E
A
B
D
Dia
L5
L6
F2
F1
F
G
H
G1
L4
L2
L3
7012510_Rev_K
12/16
Doc ID 11089 Rev 4
STGB3NC120HD, STGF3NC120HD, STGP3NC120HD
Table 11. TO-220 type A mechanical data
Package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
3.50
3.93
16.40
28.90
3.75
2.65
3.85
2.95
Doc ID 11089 Rev 4
13/16
Package mechanical data
TO-220 type A drawing
STGB3NC120HD, STGF3NC120HD, STGP3NC120HD
0015988_typeA_Rev_S
14/16
Doc ID 11089 Rev 4
STGB3NC120HD, STGF3NC120HD, STGP3NC120HD
Revision history
5
Revision history
Table 12. Document revision history
Date
Revision
Changes
13-Dec-2004
21-Jan-2005
03-May-2010
25-Jan-2011
1
2
3
4
First release.
Modified Figure 18: Turn-off SOA.
Added new package, mechanical data: TO-220.
Added new package, mechanical data: D²PAK.
Doc ID 11089 Rev 4
15/16
STGB3NC120HD, STGF3NC120HD, STGP3NC120HD
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Doc ID 11089 Rev 4
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