STGD7NC60HT4 [STMICROELECTRONICS]
N-CHANNEL 14A - 600V TO-220/DPAK Very Fast PowerMESH IGBT; N沟道14A - 600V TO- 220 / DPAK非常快的PowerMESH IGBT
| 型号： | STGD7NC60HT4 |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 14A - 600V TO-220/DPAK Very Fast PowerMESH IGBT |
| 文件： | 总12页 (文件大小：368K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STGP7NC60H - STGD7NC60H
N-CHANNEL 14A - 600V TO-220/DPAK
Very Fast PowerMESH™ IGBT
Table 1: General Features
Figure 1: Package
TYPE
V
V
(Max)
I
C
CES
CE(sat)
@25°C
@100°C
STGP7NC60H
STGD7NC60HT4 600 V
600 V
< 2.5 V
< 2.5 V
14 A
14 A
■ LOWER ON-VOLTAGE DROP (V
)
cesat
3
■ OFF LOSSES INCLUDE TAIL CURRENT
■ LOWER C /C RATIO
3
2
1
1
RES IES
■ HIGH FREQUENCY OPERATION UP TO 70
KHz
TO-220
DPAK
■ NEW GENERATION PRODUCTS WITH
TIGHTER PARAMETER DISTRIBUTION
Weight for TO-220: 1.92gr ± 0.01
Weight for DPAK: 0.38gr ± 0.01
DESCRIPTION
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the Pow-
Figure 2: Internal Schematic Diagram
™
erMESH IGBTs, with outstanding performances.
The suffix "H" identifies a family optimized for high
frequency applications in order to achieve very
high switching performances (reduced tfall) man-
taining a low voltage drop.
APPLICATIONS
■ HIGH FREQUENCY INVERTERS
■ SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
■ MOTOR DRIVERS
Table 2: Order Code
PART NUMBER
STGP7NC60H
MARKING
GP7NC60H
D7NC60H
PACKAGE
TO-220
DPAK
PACKAGING
TUBE
STGD7NC60HT4
TAPE & REEL
Rev. 2
June 2005
1/12
STGP7NC60H - STGD7NC60H
Table 3: Absolute Maximum ratings
Symbol
Parameter
Value
Unit
TO-220
DPAK
V
Collector-Emitter Voltage (V = 0)
600
20
V
V
CES
GS
V
Emitter-Collector Voltage
Gate-Emitter Voltage
ECR
V
±20
25
V
GE
I
C
Collector Current (continuous) at T = 25°C (#)
A
C
I
C
Collector Current (continuous) at T = 100°C (#)
14
A
C
I
( )
Collector Current (pulsed)
50
A
CM
P
TOT
Total Dissipation at T = 25°C
80
70
W
W/°C
C
Derating Factor
0.64
0.56
T
Storage Temperature
Operating Junction Temperature
stg
– 55 to 150
°C
T
j
( ) Pulse width limited by max. junction temperature.
Table 4: Thermal Data
Min.
Typ.
Max.
Rthj-case
Rthj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
TO-220
DPAK
1.56
1.78
62.5
100
°C/W
°C/W
°C
TO-220
DPAK
T
Maximum Lead Temperature for Soldering
Purpose (1.6 mm from case, for 10 sec.)
TO-220
DPAK
300
275
L
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
Table 5: Main Parameters
Symbol
Parameter
Test Conditions
= 1 mA, V = 0
Min.
Typ.
Max.
Unit
V
Collector-Emitter
I
C
600
V
BR(CES)
GE
Breakdown Voltage
I
Collector cut-off Current
(V = 0)
GE
V
V
= Max Rating, T = 25 °C
10
1
µA
mA
CES
GES
CE
C
= Max Rating, T = 125 °C
CE
C
I
Gate-Emitter Leakage
V
GE
= ± 20V , V = 0
±100
nA
CE
Current (V = 0)
CE
V
V
= V , I = 250 µA
Gate Threshold Voltage
3.75
5.75
2.5
V
GE(th)
CE
GE
C
V
Collector-Emitter
Saturation Voltage
V
V
= 15V, I = 7 A
V
V
1.85
1.7
CE(sat)
GE
C
= 15V, I = 7 A, Tc= 125°C
GE
C
(#) Calculated according to the iterative formula:
T
– T
JMAX
-------------------------------------------------------------------------------------------------
(T ) =
C
I
C
C
R
× V
(T , I )
THJ – C
CESAT(MAX) C C
2/12
STGP7NC60H - STGD7NC60H
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 6: Dynamic
Symbol
(1)
Parameter
Forward Transconductance
Input Capacitance
Test Conditions
Min.
Typ.
4.30
720
81
Max.
Unit
S
g
fs
V
V
= 15 V I = 7 A
CE
, C
C
C
= 25 V, f= 1 MHz, V = 0
pF
pF
pF
ies
CE
GE
Output Capacitance
oes
C
Reverse Transfer
Capacitance
17
res
Q
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
V
= 390 V, I = 7 A,
= 15 V
35
7
16
48
nC
nC
nC
g
CE
C
Q
ge
Q
gc
GE
(see Figure 21)
I
CL
Turn-Off SOA Minimum
Current
V
R
= 480 V , Tj = 150°C
50
A
clamp
= 10 Ω, V = 15 V
G
GE
(1) Pulsed: Pulse duration= 300 µs, duty cycle 1.5%
Table 7: Switching On
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
Turn-on Delay Time
Current Rise Time
V
= 390 V, I = 7 A
18.5
8.5
ns
ns
d(on)
CC
C
t
r
R = 10 Ω, V = 15V, Tj= 25°C
G GE
Turn-on Current Slope
1060
A/µs
(di/dt)
(see Figure 18)
on
t
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
V
= 390 V, I = 7 A
18.5
7
1000
ns
ns
A/µs
d(on)
CC
C
t
r
R = 10 Ω, V = 15V, Tj= 125°C
G GE
(see Figure 19)
(di/dt)
on
Table 8: Switching Off
Symbol
Parameter
Test Conditions
= 390 V, I = 7 A,
= 10 Ω , V = 15 V
GE
Min.
Typ.
27
Max.
Unit
ns
t (V
)
off
V
cc
Off Voltage Rise Time
Turn-off Delay Time
Current Fall Time
r
C
R
G
t (
d off
)
72
ns
T = 25 °C
(see Figure 19)
J
t
f
60
ns
t (V
)
V
R
= 390 V, I = 7 A,
= 10 Ω , V = 15 V
GE
Off Voltage Rise Time
Turn-off Delay Time
Current Fall Time
56
ns
r
off
cc C
G
t (
d off
)
116
105
ns
Tj = 125 °C
(see Figure 19)
t
f
ns
Table 9: Switching Energy
Symbol
Parameter
Test Conditions
= 390 V, I = 7 A
Min.
Typ.
Max
Unit
Eon (2)
Turn-on Switching Losses
Turn-off Switching Loss
Total Switching Loss
95
115
210
125
150
275
µJ
µJ
µJ
V
CC
C
E
off
(3)
R = 10 Ω, V = 15V, Tj= 25°C
G
GE
E
ts
(see Figure 19)
Eon (2)
Turn-on Switching Losses
Turn-off Switching Loss
Total Switching Loss
140
215
355
µJ
µJ
µJ
V
= 390 V, I = 7 A
CC
C
E
off
(3)
R = 10 Ω, V = 15V, Tj= 125°C
(see Figure 19)
G
GE
E
ts
2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode,
the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25°C and 125°C)
(3)Turn-off losses include also the tail of the collector current.
3/12
STGP7NC60H - STGD7NC60H
Figure 3: Output Characteristics
Figure 6: Transfer Characteristics
Figure 4: Transconductance
Figure 7: Collector-Emitter On Voltage vs Tem-
perature
Figure 5: Collector-Emitter On Voltage vs Col-
lector Current
Figure 8: Normalized Gate Threshold vs Tem-
perature
4/12
STGP7NC60H - STGD7NC60H
Figure 9: Normalized Breakdown Voltage vs
Temperature
Figure 12: Gate Charge vs Gate-Emitter Volt-
age
Figure 10: Capacitance Variations
Figure 13: Total Switching Losses vs Temper-
ature
Figure 11: Total Switching Losses vs Gate Re-
sistance
Figure 14: Total Switching Losses vs Collector
Current
5/12
STGP7NC60H - STGD7NC60H
Figure 15: Thermal Impedance for TO-220
Figure 18: Ic vs Frequency
Figure 16: Thermal Impedance for DPAK
For a fast IGBT suitable for high frequency appli-
cations, the typical collector current vs. maximum
operating frequency curve is reported. That fre-
quency is defined as follows:
f
= (P - P ) / (E
+ E
)
MAX
D
C
ON
OFF
1) The maximum power dissipation is limited by
maximum junction to case thermal resistance:
P = ∆T / R
D
THJ-C
considering ∆T = T - T = 125 °C- 75 °C = 50°C
J
C
2) The conduction losses are:
P = I * V * δ
CE(SAT)
C
C
with 50% of duty cycle, V
typical value
CESAT
@125°C.
3) Power dissipation during ON & OFF commuta-
tions is due to the switching frequency:
P
SW
= (E
+ E
) * freq.
OFF
ON
4) Typical values @ 125°C for switching losses are
used (test conditions: V = 390V, V = 15V,
Figure 17: Turn-Off SOA
CE
GE
R
= 3.3 Ohm). Furthermore, diode recovery en-
G
ergy is included in the E (see note 2), while the
ON
tail of the collector current is included in the E
measurements (see note 3).
OFF
6/12
STGP7NC60H - STGD7NC60H
Figure 19: Test Circuit for Inductive Load
Switching
Figure 21: Gate Charge Test Circuit
Figure 20: Switching Waveforms
7/12
STGP7NC60H - STGD7NC60H
TO-220 MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
TYP
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
MIN.
0.173
0.024
0.045
0.019
0.60
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
A
b
4.40
0.61
1.15
0.49
15.25
10
b1
c
D
E
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
0.645
1.137
3.75
2.65
3.85
2.95
0.147
0.104
0.151
0.116
8/12
STGP7NC60H - STGD7NC60H
TO-252 (DPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
TYP.
MAX.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
10.10
MIN.
0.087
0.035
0.001
0.025
0.204
0.018
0.019
0.236
0.252
0.173
0.368
MAX.
0.094
0.043
0.009
0.035
0.213
0.024
0.024
0.244
0.260
0.181
0.398
A
A1
A2
B
B2
C
C2
D
E
G
H
L2
L4
V2
0.8
0.031
0.60
0o
1.00
8o
0.024
0o
0.039
0o
P032P_B
9/12
STGP7NC60H - STGD7NC60H
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
16.4
50
0.059
13.2 0.504 0.520
0.795
18.4 0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
TAPE MECHANICAL DATA
2500
mm
MIN. MAX. MIN. MAX.
6.8 0.267 0.275
10.4 10.6 0.409 0.417
12.1 0.476
inch
DIM.
A0
B0
B1
D
7
1.5
1.5
1.6 0.059 0.063
0.059
D1
E
1.65 1.85 0.065 0.073
7.4 7.6 0.291 0.299
2.55 2.75 0.100 0.108
F
K0
P0
P1
P2
R
3.9
7.9
1.9
40
4.1 0.153 0.161
8.1 0.311 0.319
2.1 0.075 0.082
1.574
W
15.7
16.3 0.618 0.641
10/12
STGP7NC60H - STGD7NC60H
Table 10: Revision History
Date
Revision
Description of Changes
20-Aug-2004
09-Jun-2005
1
2
New datasheet
Modified title
11/12
STGP7NC60H - STGD7NC60H
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2005 STMicroelectronics - All Rights Reserved
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12/12
相关型号：
STGD8NC60K
N-channel 600V - 8A - D2PAK / DPAK / TO-220 Short circuit rated PowerMESH IGBT
STMICROELECTR
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