STGW30N120KD [STMICROELECTRONICS]
30 A - 1200 V - short circuit rugged IGBT; 30 A - 1200 V - 短路崎岖IGBT
| 型号： | STGW30N120KD |
| 厂家： | 
ST |
| 描述： | 30 A - 1200 V - short circuit rugged IGBT |
| 文件： | 总13页 (文件大小：359K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STGW30N120KD
30 A - 1200 V - short circuit rugged IGBT
Features
■ Low on-losses
■ High current capability
■ Low gate charge
■ Short circuit withstand time 10 µs
■ IGBT co-packaged with ultra fast free-wheeling
3
diode
2
1
Application
TO-247
■ Motor control
Description
This IGBT utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior.
Figure 1.
Internal schematic diagram
Table 1.
Order code
STGW30N120KD
Device summary
Marking
Package
TO-247
Packaging
GW30N120KD
Tube
June 2008
Rev 2
1/13
www.st.com
13
Contents
STGW30N120KD
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
STGW30N120KD
Electrical ratings
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
VCES
Collector-emitter voltage (VGE = 0)
Collector current (continuous) at 25 °C
Collector current (continuous) at 100 °C
Turn-off latching current
1200
60
(1)
A
IC
(1)
30
A
IC
(2)
100
100
25
A
ICL
(3)
Pulsed collector current
A
ICP
VGE
tscw
Gate-emitter voltage
V
Short circuit withstand time, VCE = 0.5 V(BR)CES
10
µs
Tj = 125 °C, RG = 10 Ω, VGE = 12 V
PTOT
IF
Total dissipation at TC = 25 °C
175
30
W
A
Diode RMS forward current at TC = 25 °C
Surge non repetitive forward current tp = 10 ms
sinusoidal
IFSM
Tj
100
A
Operating junction temperature
– 55 to 125
°C
1. Calculated according to the iterative formula:
T
– T
JMAX
C
I
(T ) = ------------------------------------------------------------------------------------------------------
C
C
R
× V
(T , I )
C C
THJ – C
CESAT(MAX)
2. Vclamp = 80% of VCES, Tj =150 °C, RG=10 Ω, VGE=15 V
3. Pulse width limited by max. junction temperature allowed
Table 3.
Thermal resistance
Parameter
Symbol
Value
0.57
1.6
Unit
°C/W
°C/W
°C/W
Rthj-case
Rthj-case
Rthj-amb
Thermal resistance junction-case IGBT max.
Thermal resistance junction-case diode max.
Thermal resistance junction-ambient IGBT max.
50
3/13
Electrical characteristics
STGW30N120KD
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 4.
Static
Parameter
Symbol
Test conditions
Min. Typ. Max. Unit
Collector-emitter
breakdown voltage
V(BR)CES
IC = 1 mA
1200
V
V
(VGE = 0)
VGE= 15 V, IC= 20 A
VGE= 15 V, IC= 20 A,
Tc =125 °C
2.8
2.7
3.85
6.5
Collector-emitter saturation
voltage
VCE(sat)
V
V
VGE(th)
ICES
VCE= VGE, IC= 1mA
Gate threshold voltage
4.5
VCE =1200 V
500
10
µA
Collector cut-off current
(VGE = 0)
VCE =1200 V, Tc=125 °C
mA
Gate-emitter leakage
current (VCE = 0)
IGES
gfs
VGE = 20 V
100 nA
S
V
CE = 25 V I = 20 A
Forward transconductance
20
, C
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Input capacitance
Cies
Coes
Cres
2520
170
33
pF
pF
pF
Output capacitance
VCE = 25 V, f = 1 MHz, VGE=0
Reverse transfer
capacitance
Qg
Qge
Qgc
Total gate charge
105
21
nC
nC
nC
V
CE = 960 V,
Gate-emitter charge
Gate-collector charge
IC= 20 A,VGE=15 V
56
4/13
STGW30N120KD
Electrical characteristics
Table 6.
Switching on/off (inductive load)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
td(on)
tr
VCC = 960 V, IC = 20 A
RG= 10 Ω, VGE= 15 V,
(see Figure 17)
Turn-on delay time
Current rise time
36
22
ns
ns
Turn-on current slope
840
A/µs
(di/dt)on
td(on)
tr
VCC = 960 V, IC = 20 A
RG= 10 Ω, VGE= 15 V,
Turn-on delay time
Current rise time
35
22
ns
ns
Turn-on current slope
760
A/µs
(di/dt)on
Tc= 125 °C (see Figure 17)
tr(Voff)
VCC = 960 V, IC = 20 A
RG= 10 Ω, VGE= 15 V,
(see Figure 17)
Off voltage rise time
Turn-off delay time
Current fall time
70
ns
ns
ns
td(off
tf
tr(Voff)
td(off
tf
)
251
260
VCC = 960 V, IC = 20 A
RG= 10 Ω, VGE= 15 V,
Off voltage rise time
Turn-off delay time
Current fall time
140
324
432
ns
ns
ns
)
Tc= 125 °C (see Figure 17)
Table 7.
Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Eon (1)
V
CC = 960 V, IC = 20 A
Turn-on switching losses
Turn-off switching losses
Total switching losses
2.4
4.3
6.8
mJ
mJ
mJ
(2)
RG= 10 Ω, VGE= 15 V,
Eoff
(see Figure 17)
Ets
Eon (1)
VCC = 960 V, IC = 20 A
RG= 10 Ω, VGE= 15 V,
Turn-on switching losses
Turn-off switching losses
Total switching losses
3.9
5.8
9.7
mJ
mJ
mJ
(2)
Eoff
Tc= 125 °C (see Figure 17)
Ets
1. Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 17. If the IGBT is offered
in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at
the same temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current
Table 8.
Collector-emitter diode
Symbol
Parameter
Test conditions
IF = 20 A
Min. Typ. Max. Unit
1.9
1.7
V
V
VF
Forward on-voltage
IF = 20 A, TC = 125 °C
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
IF = 20 A, VR = 45 V,
di/dt = 100 A/µs
(see Figure 20)
84
235
5.6
ns
nC
A
Qrr
Irrm
IF = 20 A, VR = 45 V,
Tc = 125 °C,
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
152
722
9
ns
nC
A
Qrr
Irrm
di/dt = 100 A/µs
(see Figure 20)
5/13
Electrical characteristics
STGW30N120KD
2.1
Electrical characteristics (curves)
Figure 2. Output characteristics
Figure 3. Transfer characteristics
HV41160
GE=15V
HV41165
IC(A)
IC(A)
120
90
V
120
90
14V
13V
12V
V
CE = 25V
60
60
11V
10V
30
30
0
0
0
5
15
20
25
30 VCE(V)
10
0
3
6
9
12 VGE (V)
-5
Figure 4. Transconductance
Figure 5. Collector-emitter on voltage
vs. temperature
Figure 6. Gate charge vs. gate-source Figure 7. Capacitance variations
voltage
HV41190
VGE
(V)
VCE =960V
IC =20A
16
12
8
4
0
0
20
40
60
80
100
Qg(nC)
6/13
STGW30N120KD
Electrical characteristics
Figure 8. Normalized gate threshold
Figure 9. Collector-emitter on voltage
vs. collector current
voltage vs. temperature
Figure 10. Normalized breakdown
voltage vs. temperature
Figure 11. Switching losses vs.
temperature
Figure 12. Switching losses vs. gate
resistance
Figure 13. Switching losses vs. collector
current
HV41260
E (µJ)
Eoff
V
V
CC = 780V
GE = 15V
4000
3000
R
G
= 10Ω
T
J
= 125˚C
Eon
2000
1000
0
0
5
10
15
20
IC (A)
7/13
Electrical characteristics
STGW30N120KD
Figure 14. Thermal Impedance
Figure 15. Turn-off SOA
Figure 16. Forward voltage drop vs
forward current
I
(A)
FM
100
90
80
70
60
50
40
30
20
10
0
Tj=150°C
(typical values)
Tj=25°C
(maximum values)
Tj=150°C
(maximum values)
V
(V)
FM
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
8/13
STGW30N120KD
Test circuit
3
Test circuit
Figure 17. Test circuit for inductive load
switching
Figure 18. Gate charge test circuit
Figure 19. Switching waveform
Figure 20. Diode recovery time waveform
9/13
Package mechanical data
STGW30N120KD
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
10/13
STGW30N120KD
Package mechanical data
TO-247 Mechanical data
mm.
Typ
Dim.
Min.
Max.
A
A1
b
4.85
5.15
2.20
1.0
2.60
1.40
2.40
3.40
b1
b2
c
2.0
3.0
0.40
19.85
15.45
0.80
D
20.15
15.75
E
e
5.45
18.50
5.50
L
14.20
14.80
4.30
L1
L2
øP
øR
S
3.70
3.55
3.65
4.50
5.50
11/13
Revision history
STGW30N120KD
5
Revision history
Table 9.
Date
Document revision history
Revision
Changes
29-Jan-2008
18-Jun-2008
1
2
Initial release
Update values in Table 2
12/13
STGW30N120KD
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