STH200N55F3-2 [STMICROELECTRONICS]
160A, 55V, 0.0026ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, H2PAK-3;
| 型号： | STH200N55F3-2 |
| 厂家： | 
ST |
| 描述： | 160A, 55V, 0.0026ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, H2PAK-3 局域网 开关 脉冲 晶体管 |
| 文件： | 总11页 (文件大小：478K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STH200N55F3-2
N-channel 55 V, 1.8 mΩ, 160 A, H2PAK
STripFET™ III Power MOSFET
Preliminary data
Features
RDS(on)
max
(1)
Type
VDSS
ID
STH200N55F3-2
55 V
< 2.6 mΩ
160 A
2
1. Current limited by package
■ Ultra low on-resistance
■ 100% avalanche tested
3
3
1
H²PAK
Application
■ Switching applications
Description
This STripFET™ III Power MOSFET technology is
among the latest improvements, which have been
especially tailored to minimize on-state resistance
providing superior switching performance.
Figure 1.
Internal schematic diagram
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Table 1.
Device summary
Order code
STH200N55F3-2
Marking
Package
H²PAK
Packaging
200N55F3
Tape and reel
July 2009
Doc ID 16085 Rev 1
1/11
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
www.st.com
11
Contents
STH200N55F3-2
Contents
1
2
3
4
5
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2/11
Doc ID 16085 Rev 1
STH200N55F3-2
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
VDS
VGS
Drain-source voltage (VGS = 0)
Gate-source voltage
55
20
V
V
(1)
ID
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
160
160
640
300
2.0
1.0
A
ID
A
(2)
IDM
A
(3)
PTOT
Total dissipation at TC = 25 °C
Derating factor
W
W/°C
J
(4)
EAS
Single pulse avalanche energy
Storage temperature
Tstg
Tj
-55 to 175
°C
Operating junction temperature
1. Current limited by package
2. Pulse width limited by safe operating area
3. This value is rated according to Rthj-c
4. Starting Tj = 25 °C, ID = 60 A, VDD = 35 V
Table 3.
Symbol
Thermal data
Parameter
Value
0.5
Unit
°C/W
°C/W
Rthj-case Thermal resistance junction-case max
Rthj-pcb(1)
Thermal resistance junction-pcb max
35
1. When mounted on 1 inch2 FR-4 2 oz Cu
Doc ID 16085 Rev 1
3/11
Electrical characteristics
STH200N55F3-2
2
Electrical characteristics
(T
= 25 °C unless otherwise specified)
case
Table 4.
Symbol
On /off states
Parameter
Test conditions
Min.
Typ.
Max. Unit
Drain-source
breakdown voltage
V(BR)DSS
ID = 250 µA, VGS= 0
55
V
VDS = Max rating,
1
µA
µA
Zero gate voltage
drain current (VGS = 0)
IDSS
VDS = Max rating, Tc = 125 °C
10
Gate body leakage
current (VDS = 0)
IGSS
VDS
=
20 V
100 nA
VGS(th)
RDS(on)
Gate threshold voltage VDS = VGS, ID = 250 µA
2
4
V
Static drain-source on
VGS = 10 V, ID = 60 A
resistance
1.8
2.6
mΩ
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max. Unit
Input capacitance
Ciss
Coss
Crss
6800
1450
15
pF
Output capacitance
VDS = 25 V, f = 1 MHz, VGS =0
-
-
-
pF
pF
Reverse transfer
capacitance
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 44 V, ID = 120 A,
VGS = 10 V
100
30
nC
nC
nC
-
Figure 3
26
4/11
Doc ID 16085 Rev 1
STH200N55F3-2
Electrical characteristics
Min. Typ. Max. Unit
Table 6.
Switching times
Parameter
Symbol
Test conditions
VDD = 27.5 V, ID = 60 A
RG = 4.7 Ω, VGS = 10 V,
Figure 2
td(on)
tr
Turn-on delay time
Rise time
25
ns
ns
-
-
-
-
150
VDD = 27.5 V, ID = 60 A
RG= 4.7 Ω, VGS= 10 V,
Figure 2
td(off)
tf
Turn-off delay time
Fall time
110
50
ns
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
Source-drain current
160
640
A
A
-
-
(1)
ISD
Source-drain current (pulsed)
(2)
VSD
Forward on voltage
ISD = 160 A, VGS = 0
1.5
V
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 120 A,di/dt = 100 A/µs
VDD = 35 V, Tj = 150 °C
Figure 7
60
110
3.5
ns
nC
A
Qrr
-
IRRM
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Doc ID 16085 Rev 1
5/11
Test circuits
STH200N55F3-2
3
Test circuits
Figure 2.
Switching times test circuit for
resistive load
Figure 3.
Gate charge test circuit
VDD
12V
47kΩ
100nF
1kΩ
2200
3.3
µF
RL
µF
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
D.U.T.
VD
RG
VGS
2200
µF
D.U.T.
VG
2.7kΩ
47kΩ
PW
1kΩ
PW
AM01468v1
AM01469v1
Figure 4.
Test circuit for inductive load
switching and diode recovery times
Figure 5.
Unclamped inductive load test
circuit
L
A
D
A
A
B
FAST
DIODE
L=100µH
VD
G
2200
µF
D.U.T.
3.3
µF
VDD
S
3.3
µF
1000
µF
B
B
VDD
25
Ω
ID
D
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 6.
Unclamped inductive waveform
Figure 7.
Switching time waveform
ton
tdon
toff
tdoff
V(BR)DSS
tr
tf
VD
90%
10%
90%
IDM
10%
VDS
ID
0
0
VDD
VDD
90%
VGS
10%
AM01472v1
AM01473v1
6/11
Doc ID 16085 Rev 1
STH200N55F3-2
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Doc ID 16085 Rev 1
7/11
Package mechanical data
STH200N55F3-2
Table 8.
Dim.
H²PAK 2 leads mechanical data
mm
Min.
Typ.
Max.
A
A1
C
4.30
0.03
1.17
4.98
0.50
0.78
10.00
7.171
15.30
1.27
4.93
7.45
1.5
4.80
0.20
1.37
5.18
0.90
0.85
10.40
7.971
15.80
1.40
5.23
7.85
1.7
e
E
F
H
H1
L
-
L1
L2
L3
L4
M
R
2.6
2.9
0.20
0°
0.60
8°
V
8/11
Doc ID 16085 Rev 1
STH200N55F3-2
Figure 8.
Package mechanical data
H²PAK 2 leads drawing
8159712_B
Figure 9.
H²PAK 2 recommended footprint
8159712_B
Doc ID 16085 Rev 1
9/11
Revision history
STH200N55F3-2
5
Revision history
Table 9.
Date
30-Jul-2009
Document revision history
Revision
Changes
1
First release.
10/11
Doc ID 16085 Rev 1
STH200N55F3-2
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Doc ID 16085 Rev 1
11/11
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