STN817 [STMICROELECTRONICS]
PNP MEDIUM POWER TRANSISTORS; PNP中功率晶体管
| 型号： | STN817 |
| 厂家： | 
ST |
| 描述： | PNP MEDIUM POWER TRANSISTORS |
| 文件： | 总5页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STF817
STN817
®
PNP MEDIUM POWER TRANSISTORS
Type
Marking
817
STF817
STN817
N817
■
■
SURFACE-MOUNTING DEVICES IN
MEDIUM POWER SOT-223 AND SOT-89
PACKAGES
2
3
AVAILABLE IN TAPE & REEL PACKING
2
1
APPLICATIONS
■
■
■
VOLTAGE REGULATION
RELAY DRIVER
GENERIC SWITCH
SOT-223
SOT-89
DECRIPTION
The STF817 and STN817 are PNP transistors
manufactured using Planar Technology resulting
in rugged high performance devices.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
Devices
STN817
STF817
SOT-89
Packages
SOT-223
VCBO
VCEO
VEBO
IC
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
-120
-80
-5
V
V
V
-1.5
-2
A
ICM
IB
Collector Peak Current (tp < 5 ms)
Base Current
A
-0.3
-0.6
A
IBM
Ptot
Tstg
Tj
Base Peak Current (tp < 5 ms)
A
o
Total Dissipation at Tc = 25 C
1.6
1.4
W
oC
oC
Storage Temperature
-65 to 150
150
Max. Operating Junction Temperature
1/5
April 2002
STF817 - STN817
THERMAL DATA
SOT-223
SOT-89
Rthj-amb
•
Thermal Resistance Junction-ambient
Max
78
89
oC/W
• Device mounted on a PCB area of 1 cm2.
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
VCE = -120 V
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off
Current (VBE = 0)
-500
µA
ICEO
IEBO
Collector Cut-off
Current (IB = 0)
VCE = -80 V
-1
mA
µA
V
Emitter Cut-off Current VEB = -5 V
(IC = 0)
-100
VCEO(sus) Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = -10 mA
-80
VCE(sat)
VBE(sat)
hFE
Collector-Emitter
Saturation Voltage
IC = -100 mA
IC = -1 A
IB = -10 mA
IB = -100 mA
-0.25
-0.5
V
V
Base-Emitter
Saturation Voltage
IC = -100 mA
IC = -1 A
IB = -10 mA
IB = -100 mA
-1
-1.1
V
V
DC Current Gain
IC = -100 mA
IC = -500 mA
IC = -1 A
VCE = -2 V
VCE = -2 V
VCE = -2 V
140
80
40
fT
Transition Frequency
IC = -0.1 A
VCE = -10 V
50
MHz
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2/5
STF817 - STN817
SOT-223 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
1.80
0.80
3.10
0.32
6.70
MIN.
MAX.
A
B
0.071
0.60
2.90
0.24
6.30
0.70
3.00
0.26
6.50
2.30
4.60
3.50
7.00
0.024
0.114
0.009
0.248
0.027
0.118
0.010
0.256
0.090
0.181
0.138
0.276
0.031
0.122
0.013
0.264
B1
c
D
e
e1
E
3.30
6.70
3.70
7.30
10o
0.130
0.264
0.146
0.287
10o
H
V
A1
0.02
P008B
3/5
STF817 - STN817
SOT-89 MECHANICAL DATA
mm
mils
DIM.
MIN.
1.4
TYP.
MAX.
1.6
MIN.
55.1
17.3
14.2
13.8
13.8
173.2
63.8
90.2
55.9
115.0
155.1
35.0
TYP.
MAX.
63.0
A
B
0.44
0.36
0.35
0.35
4.4
0.56
0.48
0.44
0.44
4.6
22.0
B1
C
18.9
17.3
C1
D
17.3
181.1
72.0
D1
E
1.62
2.29
1.42
2.92
3.94
0.89
1.83
2.6
102.4
61.8
e
1.57
3.07
4.25
1.2
e1
H
120.9
167.3
47.2
L
P025H
4/5
STF817 - STN817
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2002 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
5/5
相关型号：
STN8810
Trio of Nomadik application processors bring multimedia to next-generation mobile devices
STMICROELECTR
©2020 ICPDF网 联系我们和版权申明