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STP11NC40 [STMICROELECTRONICS]

N-CHANNEL 400V - 0.44ohm - 9.5A TO-220/TO-220FP PowerMESH⑩II Power MOSFET; N沟道400V - 0.44ohm - 9.5A TO- 220 / TO- 220FP PowerMESH⑩II功率MOSFET
STP11NC40
型号： STP11NC40
厂家： ST    ST
描述：

N-CHANNEL 400V - 0.44ohm - 9.5A TO-220/TO-220FP PowerMESH⑩II Power MOSFET
N沟道400V - 0.44ohm - 9.5A TO- 220 / TO- 220FP PowerMESH⑩II功率MOSFET
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STP11NC40, STP11NC40FP  
N-CHANNEL 400V - 0.44Ω - 9.5A TO-220/TO-220FP  
PowerMESH™II Power MOSFET  
TYPE  
V
R
I
D
Pw  
DSS  
DS(on)  
STP11NC40  
STP11NC40FP  
400 V < 0.55 Ω  
400 V < 0.55 Ω 9.5 A(*)  
9.5 A  
120 W  
30 W  
■
■
■
■
■
TYPICAL R (on) = 0.44 Ω  
EXTREMELY HIGH dv/dt CAPABILITY  
100% AVALANCHE TESTED  
NEW HIGH VOLTAGE BENCHMARK  
GATE CHARGE MINIMIZED  
DS  
3
2
1
TO-220  
TO-220FP  
DESCRIPTION  
The PowerMESH™II is the evolution of the first  
generation of MESH OVERLAY™. The layout re-  
finements introduced greatly improve the Ron*area  
figure of merit while keeping the device at the lead-  
ing edge for what concerns swithing speed, gate  
charge and ruggedness.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
■
■
■
HIGH CURRENT, HIGH SPEED SWITCHING  
SWITH MODE POWER SUPPLIES (SMPS)  
DC-AC CONVERTERS FOR WELDING  
EQUIPMENT AND UNINTERRUPTIBLE  
POWER SUPPLIES AND MOTOR DRIVER  
ORDERING INFORMATION  
SALES TYPE  
MARKING  
P11NC40  
PACKAGE  
PACKAGING  
TUBE  
STP11NC40  
TO-220  
STP11NC40FP  
P11NC40FP  
TO-220FP  
TUBE  
January 2002  
1/10  
STP11NC40, STP11NC40FP  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
STP11NC40  
STP11NC40FP  
V
Drain-source Voltage (V = 0)  
400  
400  
± 30  
V
V
DS  
GS  
V
Drain-gate Voltage (R = 20 kΩ)  
DGR  
GS  
V
GS  
Gate- source Voltage  
V
I
Drain Current (continuos) at T = 25°C  
9.5  
6
9.5 (*)  
6 (*)  
38 (*)  
30  
A
D
C
I
Drain Current (continuos) at T = 100°C  
A
D
C
I
( )  
Drain Current (pulsed)  
38  
A
DM  
P
Total Dissipation at T = 25°C  
120  
0.96  
W
TOT  
C
Derating Factor  
0.24  
W/°C  
V/ns  
V
dv/dt (1)  
Peak Diode Recovery voltage slope  
Insulation Withstand Voltage (DC)  
3.5  
V
ISO  
-
2500  
T
T
stg  
Operating Junction Temperature  
Storage Temperature  
-55 to 150  
-55 to 150  
°C  
°C  
j
( ) Pulse width limited by safe operating area  
(1) I ≤9.5A, di/dt ≤100A/µs, V ≤ V  
, T ≤ T  
JMAX.  
SD  
DD  
(BR)DSS  
j
(*) Limited only by maximum temperature allowed  
THERMAL DATA  
TO-220  
1.04  
TO-220FP  
Rthj-case  
Rthj-amb  
Thermal Resistance Junction-case Max  
4.1  
°C/W  
°C/W  
°C  
Thermal Resistance Junction-ambient Max  
Maximum Lead Temperature For Soldering Purpose  
62.5  
300  
T
l
AVALANCHE CHARACTERISTICS  
Symbol  
Parameter  
Max Value  
Unit  
I
AR  
Avalanche Current, Repetitive or Not-Repetitive  
9.5  
A
(pulse width limited by T max)  
j
E
AS  
Single Pulse Avalanche Energy  
300  
mJ  
(starting T = 25 °C, I = I , V = 50 V)  
j
D
AR  
DD  
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)  
ON/OFF  
Symbol  
Parameter  
Drain-source  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
V
I
D
= 250 µA, V = 0  
400  
V
(BR)DSS  
GS  
Breakdown Voltage  
I
Zero Gate Voltage  
V
= Max Rating  
DS  
1
50  
µA  
µA  
DSS  
Drain Current (V = 0)  
V
= Max Rating, T = 125 °C  
GS  
DS  
C
I
Gate-body Leakage  
V
GS  
= ± 30V  
±100  
nA  
GSS  
Current (V = 0)  
DS  
V
V
V
= V , I = 250µA  
Gate Threshold Voltage  
2
3
4
V
GS(th)  
DS  
GS  
D
R
Static Drain-source On  
Resistance  
= 10V, I = 5 A  
0.44  
0.55  
Ω
DS(on)  
GS  
D
2/10  
STP11NC40, STP11NC40FP  
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)  
DYNAMIC  
Symbol  
Parameter  
Test Conditions  
= 15 V I = 5 A  
Min.  
Typ.  
Max.  
Unit  
g
fs  
(1)  
Forward Transconductance  
V
DS  
8.6  
S
, D  
C
Input Capacitance  
Output Capacitance  
Reverse Transfer  
Capacitance  
V
DS  
= 25V, f = 1 MHz, V = 0  
995  
172  
25  
pF  
pF  
pF  
iss  
GS  
C
oss  
C
rss  
SWITCHING ON  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
t
Turn-on Delay Time  
Rise Time  
V
= 200 V, I = 5 A  
15  
18  
ns  
ns  
d(on)  
DD  
D
t
r
R = 4.7Ω V = 10 V  
G GS  
(Resistive Load see, Figure 3)  
Q
Q
Q
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
V
V
= 320V, I = 10 A,  
= 10V  
32.5  
6
15  
45.5  
nC  
nC  
nC  
g
DD  
D
gs  
gd  
GS  
SWITCHING OFF  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
t
Turn-off Delay Time  
Fall Time  
V
= 320 V, I = 5 A  
43  
15  
ns  
ns  
d(off)  
DD  
D
t
f
R = 4.7Ω V = 10 V  
G GS  
(Resistive Load see, Figure 3)  
t
V
R
= 320V, I = 10 A,  
7.5  
14  
23  
ns  
ns  
ns  
Off-voltage Rise Time  
Fall Time  
Cross-over Time  
r(Voff)  
DD  
D
t
f
= 4.7Ω, V = 10V  
G
GS  
t
c
(Inductive Load see, Figure 5)  
SOURCE DRAIN DIODE  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
I
9.5  
38  
A
A
Source-drain Current  
Source-drain Current (pulsed)  
SD  
(2)  
I
SDM  
V
(1)  
I
I
= 9.5 A, V = 0  
Forward On Voltage  
1.6  
V
SD  
SD  
GS  
t
= 9.5 A, di/dt = 100A/µs  
= 100V, T = 150°C  
Reverse Recovery Time  
Reverse Recovery Charge  
Reverse Recovery Current  
315  
2100  
13.6  
ns  
nC  
A
rr  
SD  
Q
V
DD  
rr  
RRM  
j
I
(see test circuit, Figure 5)  
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.  
2. Pulse width limited by safe operating area.  
Safe Operating Area For TO-220  
Safe Operating Area For TO-220FP  
3/10  
STP11NC40, STP11NC40FP  
Thermal Impedance For TO-220  
Thermal Impedance For TO-220FP  
Output Characteristics  
Transfer Characteristics  
Transconductance  
Static Drain-source On Resistance  
4/10  
STP11NC40, STP11NC40FP  
Gate Charge vs Gate-source Voltage  
Capacitance Variations  
NormalizedGateThresholdVoltagevsTemperature  
Normalized On Resistance vs Temperature  
Source-drain Diode Forward Characteristics  
Normalized BVDSS vs Temperature  
5/10  
STP11NC40, STP11NC40FP  
Maximum Avalanche Energy vs Temperature  
Id vs Temperature  
6/10  
STP11NC40, STP11NC40FP  
Fig. 1: Unclamped Inductive Load Test Circuit  
Fig. 2: Unclamped Inductive Waveform  
Fig. 3: Switching Times Test Circuit For  
Fig. 4: Gate Charge test Circuit  
Resistive Load  
Fig. 5: Test Circuit For Inductive Load Switching  
And Diode Recovery Times  
7/10  
STP11NC40, STP11NC40FP  
TO-220 MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
TYP.  
MAX.  
4.60  
1.32  
2.72  
MIN.  
0.173  
0.048  
0.094  
MAX.  
0.181  
0.051  
0.107  
A
C
4.40  
1.23  
2.40  
D
D1  
E
1.27  
0.050  
0.49  
0.61  
1.14  
1.14  
4.95  
2.4  
0.70  
0.88  
1.70  
1.70  
5.15  
2.7  
0.019  
0.024  
0.044  
0.044  
0.194  
0.094  
0.393  
0.027  
0.034  
0.067  
0.067  
0.203  
0.106  
0.409  
F
F1  
F2  
G
G1  
H2  
L2  
L4  
L5  
L6  
L7  
L9  
DIA.  
10.0  
10.40  
16.4  
0.645  
13.0  
2.65  
15.25  
6.2  
14.0  
2.95  
15.75  
6.6  
0.511  
0.104  
0.600  
0.244  
0.137  
0.147  
0.551  
0.116  
0.620  
0.260  
0.154  
0.151  
3.5  
3.93  
3.85  
3.75  
L2  
Dia.  
L5  
L9  
L7  
L6  
L4  
P011C  
8/10  
STP11NC40, STP11NC40FP  
TO-220FP MECHANICAL DATA  
mm.  
TYP  
inch  
TYP.  
DIM.  
MIN.  
4.4  
MAX.  
4.6  
2.7  
2.75  
0.7  
1
MIN.  
0.173  
0.098  
0.098  
0.017  
0.030  
0.045  
0.045  
0.195  
0.094  
0.393  
MAX.  
0.181  
0.106  
0.108  
0.027  
0.039  
0.067  
0.067  
0.204  
0.106  
0.409  
A
B
2.5  
D
2.5  
E
0.45  
0.75  
1.15  
1.15  
4.95  
2.4  
F
F1  
F2  
G
1.7  
1.7  
5.2  
2.7  
10.4  
G1  
H
10  
L2  
L3  
L4  
L5  
L6  
L7  
Ø
16  
0.630  
28.6  
9.8  
2.9  
15.9  
9
30.6  
10.6  
3.6  
1.126  
.0385  
0.114  
0.626  
0.354  
0.118  
1.204  
0.417  
0.141  
0.645  
0.366  
0.126  
16.4  
9.3  
3
3.2  
L3  
L6  
L7  
1 2 3  
L4  
L5  
L2  
9/10  
STP11NC40, STP11NC40FP  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is  
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are  
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products  
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is a trademark of STMicroelectronics  
© 2000 STMicroelectronics – Printed in Italy – All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
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Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.  
http://www.st.com  
10/10  

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