STP20N95K5 [STMICROELECTRONICS]
N-channel 950 V, 0.275 Ω, 17.5 A SuperMESH 5⢠Power MOSFET in D²PAK, TO-220FP, TO-220 and TO-247 packages; N沟道950 V， 0.275 I© ， 17.5超网5A ?? ¢功率MOSFET在D²PAK ， TO- 220FP ， TO- 220和TO- 247封装
| 型号： | STP20N95K5 |
| 厂家： | 
ST |
| 描述： | N-channel 950 V, 0.275 Ω, 17.5 A SuperMESH 5⢠Power MOSFET in D²PAK, TO-220FP, TO-220 and TO-247 packages |
| 文件： | 总20页 (文件大小：1463K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STB20N95K5, STF20N95K5
STP20N95K5, STW20N95K5
N-channel 950 V, 0.275 Ω, 17.5 A SuperMESH 5™ Power MOSFET
in D²PAK, TO-220FP, TO-220 and TO-247 packages
Datasheet — production data
Features
TAB
Order codes VDSS RDS(on)max
ID
PW
3
STB20N95K5
STF20N95K5
250 W
40 W
1
3
2
D²PAK
1
950 V < 0.330 Ω 17.5 A
TO-220FP
STP20N95K5
STW20N95K5
TAB
250 W
■ TO-220 worldwide best RDS(on)
■ Worldwide best FOM (figure of merit)
■ Ultra low gate charge
3
2
3
1
2
TO-247 1
TO-220
■ 100% avalanche tested
■ Zener-protected
Figure 1.
Internal schematic diagram
Applications
D(2,TAB)
■ Switching applications
Description
These devices are N-channel Power MOSFETs
developed using SuperMESH™ 5 technology.
This revolutionary, avalanche-rugged, high
voltage Power MOSFET technology is based on
an innovative proprietary vertical structure. The
result is a drastic reduction in on-resistance and
ultra low gate charge for applications which
require superior power density and high
efficiency.
G(1)
S(3)
AM01476v1
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STB20N95K5
STF20N95K5
STP20N95K5
STW20N95K5
D²PAK
TO-220FP
TO-220
Tape and reel
20N95K5
Tube
TO-247
June 2012
Doc ID 16825 Rev 4
1/20
This is information on a product in full production.
www.st.com
20
Contents
STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
2/20
Doc ID 16825 Rev 4
STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value
D²PAK
TO-220
TO-247
Parameter
Unit
STF20N95K5
VGS
ID
Gate- source voltage
30
17.5
11
V
A
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
ID
A
(1)
IDM
70
A
PTOT
IAR
Total dissipation at TC = 25 °C
250
40
W
Max current during repetitive or single
pulse avalanche
6
A
(pulse width limited by Tjmax
)
Single pulse avalanche energy
EAS
200
2
mJ
kV
(starting TJ = 25 °C, ID=IAS, VDD= 50 V)
Gate-source human body model
(R= 1,5 kΩ, C = 100 pF)
ESD
Insulation withstand voltage (RMS) from
all three leads to external heat sink
VISO
2500
V
(t=1 s;TC=25 °C)
dv/dt (2)
Peak diode recovery voltage slope
6
V/ns
°C
Tj
Operating junction temperature
Storage temperature
-55 to 150
Tstg
1. Pulse width limited by safe operating area.
2. ≤ 17.5 A, di/dt ≤ 100 A/µs, V ≤V
(BR)DSS
I
SD
Peak
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
D²PAK TO-220 TO-247 TO-220FP
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-amb max
Rthj-pcb Thermal resistance junction-pcb max
0.5
3.1
°C/W
°C/W
°C/W
62.5
50
62.5
30
Doc ID 16825 Rev 4
3/20
Electrical characteristics
STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4.
Symbol
On/off states
Parameter
Test conditions
ID = 1 mA, VGS= 0
Min. Typ. Max. Unit
Drain-source breakdown
voltage
V(BR)DSS
950
V
VDS = 950 V,
1
µA
µA
Zero gate voltage drain
current (VGS = 0)
IDSS
VDS = 950 V, Tc=125 °C
50
Gate body leakage current
(VDS = 0)
IGSS
VGS
=
20 V
10
µA
V
VGS(th) Gate threshold voltage
VDS = VGS, ID = 100 µA
VGS = 10 V, ID= 9 A
3
4
5
Static drain-source
RDS(on)
0.275 0.330
Ω
on-resistance
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Input capacitance
Output capacitance
1500
80
pF
pF
Coss
VDS =100 V, f=1 MHz, VGS=0
-
-
-
-
Reverse transfer
capacitance
Crss
5
pF
pF
Equivalent capacitance time
related
(1)
Co(tr)
170
VGS = 0, VDS = 0 to 760 V
Equivalent capacitance
energy related
(2)
Co(er)
-
-
65
-
-
pF
RG
Intrinsic gate resistance
f = 1MHz open drain
VDD = 760 V, ID = 9 A
3.5
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
40
8
nC
nC
nC
VGS =10 V
-
-
(see Figure 19)
25
1. Time related is defined as a constant equivalent capacitance giving the same charging time as C
when
oss
V
increases from 0 to 80% V
DSS
DS
2. energy related is defined as a constant equivalent capacitance giving the same stored energy as C
oss
when V increases from 0 to 80% V
DS
DSS
4/20
Doc ID 16825 Rev 4
STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5
Electrical characteristics
Min. Typ. Max. Unit
Table 6.
Symbol
Switching times
Parameter
Test conditions
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
17
12
70
20
ns
ns
ns
ns
VDD = 475 V, ID = 9 A,
RG=4.7 Ω, VGS=10 V
(see Figure 21)
-
-
Turn-off delay time
Fall time
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
Source-drain current
17.5
70
mA
A
-
-
ISDM
Source-drain current (pulsed)
(1)
VSD
Forward on voltage
ISD= 17.5 A, VGS=0
1.5
V
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 17.5 A, VDD= 60 V
di/dt = 100 A/µs,
530
12
ns
μC
A
Qrr
-
-
IRRM
(see Figure 20)
44
I
SD= 17.5 A,VDD= 60 V
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
650
14
ns
μC
A
di/dt=100 A/µs,
Tj=150 °C(see
Figure 20)
Qrr
IRRM
44
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Table 8.
Symbol
Gate-source Zener diode
Parameter
Test conditions
Min. Typ. Max. Unit
30
V(BR)GSO Gate-source breakdown voltage Igs 1mA, (ID= 0)
-
-
V
The built-in-back Zener diodes have specifically been designed to enhance not only the
device’s ESD capability, but also to make them safely absorb possible voltage transients that
may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Doc ID 16825 Rev 4
5/20
Electrical characteristics
STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for D²PAK and Figure 3.
TO-220
Thermal impedance for D²PAK and
TO-220
AM11182v1
I
D
(A)
Tj=150°C
Tc=25°C
Single pulse
10
10µs
100µs
1ms
10ms
1
0.1
10
VDS(V)
0.1
1
100
Figure 4.
Safe operating area for TO-220FP
Figure 5.
Thermal impedance for TO-220FP
AM11183v1
I
D
(A)
Tj=150°C
Tc=25°C
Single pulse
10
10µs
100µs
1ms
1
0.1
10ms
0.01
10
VDS(V)
0.1
1
100
Figure 6.
Safe operating area for TO-247
Figure 7.
Thermal impedance for TO-247
AM11184v1
I
D
(A)
Tj=150°C
Tc=25°C
Single pulse
100
10µs
100µs
1ms
10
10ms
1
0.1
10
VDS(V)
0.1
1
100
6/20
Doc ID 16825 Rev 4
STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5
Electrical characteristics
Figure 8.
Output characteristics
Figure 9.
Transfer characteristics
AM11185v1
AM11186v1
I
D
(A)
I
D
(A)
40
35
VDS=15V
V
GS=10V
8V
30
25
20
15
30
25
20
7V
15
10
10
5
6V
5V
5
0
0
0
5
2
20
25
V
DS(V)
8
10
VGS(V)
10
15
0
4
6
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance
AM11187v1
AM11188v1
V
(V)
GS
R
DS(on)
(Ω)
V
DS(V)
V
DD=760V
Q
g
12
I
D=9A
V
GS=10V
800
600
400
200
0
0.29
10
8
VDS
0.28
0.27
0.26
6
4
2
0
6
10
14
18
I
2
10
30
40
Qg(nC)
D(A)
0
20
0
Figure 12. Capacitance variations
Figure 13. Output capacitance stored energy
AM11189v1
AM11190v1
C
(pF)
(µJ)
oss
E
4.5
4.0
10000
1000
3.5
3.0
2.5
2.0
1.5
1.0
Ciss
100
10
1
Coss
Crss
0.5
0
0
0.1
100
200
400 500
1
10
V
DS(V)
100
300
VDS(V)
Doc ID 16825 Rev 4
7/20
Electrical characteristics
STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5
Figure 14. Normalized gate threshold voltage Figure 15. Normalized on-resistance vs
vs temperature
temperature
AM11192v1
AM11193v1
V
GS(th)
(norm)
R
DS(on)
(norm)
1.2
1.1
1.0
0.9
0.8
2.5
2.0
1.5
1.0
0.7
0.6
0.5
0.5
0
0.4
0.3
-25
25
75
TJ
(°C)
-25
25
75
TJ(°C)
125
125
Figure 16. Maximum avalanche energy vs
starting Tj
Figure 17. Normalized BVDSS vs temperature
AM11194v1
AM11191v1
E
(mJ)
AS
BVDSS
(norm)
I
D
=6 A
1.10
V
DD=50 V
200
180
160
140
1.08
1.06
1.04
1.02
120
100
80
1.00
0.98
0.96
0.94
60
40
20
0
0
0.92
0.90
20
40
60 80 100
120
140T
J(°C)
-25
25
75
TJ(°C)
125
8/20
Doc ID 16825 Rev 4
STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5
Test circuits
3
Test circuits
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
2200
3.3
μF
RL
μF
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
D.U.T.
VG
VD
RG
VGS
2200
μF
D.U.T.
2.7kΩ
47kΩ
PW
1kΩ
PW
AM01468v1
AM01469v1
Figure 20. Test circuit for inductive load
switching and diode recovery times
Figure 21. Unclamped inductive load test
circuit
L
A
A
A
B
D
FAST
DIODE
L=100μH
VD
G
2200
μF
D.U.T.
B
3.3
μF
VDD
S
3.3
μF
1000
μF
B
VDD
25
Ω
ID
D
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 22. Unclamped inductive waveform
Figure 23. Switching time waveform
ton
tdon
toff
tdoff
V(BR)DSS
tr
tf
VD
90%
10%
90%
IDM
10%
VDS
ID
0
0
VDD
VDD
90%
VGS
10%
AM01472v1
AM01473v1
Doc ID 16825 Rev 4
9/20
Package mechanical data
STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 9.
D²PAK (TO-263) mechanical data
mm
Dim.
Min.
Typ.
Max.
A
A1
b
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
4.60
0.23
0.93
1.70
0.60
1.36
9.35
b2
c
c2
D
D1
E
10.40
E1
e
8.50
2.54
e1
H
4.88
15
5.28
15.85
2.69
2.79
1.40
1.75
J1
L
2.49
2.29
1.27
1.30
L1
L2
R
0.4
V2
0°
8°
10/20
Doc ID 16825 Rev 4
STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5
Figure 24. D²PAK (TO-263) drawing
Package mechanical data
0079457_S
Figure 25. D²PAK footprint(a)
16.90
12.20
5.08
1.60
3.50
9.75
Footprint
a. All dimensions are in millimeters
Doc ID 16825 Rev 4
11/20
Package mechanical data
STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5
Table 10. TO-220FP mechanical data
Dim.
mm
Min.
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
Figure 26. TO-220FP drawing
L7
E
A
B
D
Dia
L5
L6
F2
F1
F
G
H
G1
L4
L2
L3
7012510_Rev_K
12/20
Doc ID 16825 Rev 4
STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5
Table 11. TO-220 type A mechanical data
Package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
3.50
3.93
16.40
28.90
3.75
2.65
3.85
2.95
Doc ID 16825 Rev 4
13/20
Package mechanical data
STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5
Figure 27. TO-220 type A drawing
0015988_typeA_Rev_S
14/20
Doc ID 16825 Rev 4
STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5
Table 12. TO-247 mechanical data
Package mechanical data
mm.
Typ.
Dim.
Min.
Max.
A
A1
b
4.85
2.20
1.0
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
b1
b2
c
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
D
E
e
5.45
18.50
5.50
L
L1
L2
∅P
∅R
S
3.55
4.50
5.30
3.65
5.50
5.70
Doc ID 16825 Rev 4
15/20
Package mechanical data
Figure 28. TO-247 drawing
STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5
0075325_G
16/20
Doc ID 16825 Rev 4
STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5
Packaging mechanical data
5
Packaging mechanical data
Table 13. D²PAK (TO-263) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
D
10.5
15.7
1.5
10.7
15.9
1.6
A
B
C
D
G
N
T
330
1.5
12.8
20.2
24.4
100
13.2
26.4
30.4
D1
E
1.59
1.65
11.4
4.8
1.61
1.85
11.6
5.0
F
K0
P0
P1
P2
R
3.9
4.1
11.9
1.9
12.1
2.1
Base qty
Bulk qty
1000
1000
50
T
0.25
23.7
0.35
24.3
W
Doc ID 16825 Rev 4
17/20
Packaging mechanical data
Figure 29. Tape
STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5
10 pitches cumulative
tolerance on tape +/- 0.2 mm
P0
P2
Top cover
D
T
tape
E
F
W
K0
B0
A0
D1
P1
User direction of feed
R
Bending radius
User direction of feed
AM08852v2
Figure 30. Reel
T
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
N
A
G measured at hub
Full radius
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
18/20
Doc ID 16825 Rev 4
STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5
Revision history
6
Revision history
Table 14. Document revision history
Date
Revision
Changes
25-Nov-2009
12-Jan-2010
1
2
First release.
Corrected VGS value in Table 2: Absolute maximum ratings.
Inserted device in D2PAK.
Document status promoted from preliminary data to datasheet.
Added: Section 2.1: Electrical characteristics (curves)
Updated Section 4: Package mechanical data.
Added Section 5: Packaging mechanical data.
Minor text changes.
22-Dec-2011
06-Jun-2012
3
4
Figure 9: Transfer characteristics has been updated.
Doc ID 16825 Rev 4
19/20
STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5
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