STP22NM60N [STMICROELECTRONICS]

N-channel 600 V, 0.2 Î©, 16 A MDmeshâ¢ II Power MOSFET; N沟道600 V ， 0.2 I© ， 16 A MDmeshâ ?? ¢ II功率MOSFET


型号：	STP22NM60N
厂家：	ST
描述：	N-channel 600 V, 0.2 Î©, 16 A MDmeshâ¢ II Power MOSFET N沟道600 V ， 0.2 I© ， 16 A MDmeshâ ?? ¢ II功率MOSFET 晶体晶体管功率场效应晶体管开关脉冲 PC 局域网
文件：	总23页 (文件大小：994K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

STB22NM60N, STF22NM60N, STI22NM60N

STP22NM60N, STW22NM60N

N-channel 600 V, 0.2 Ω, 16 A MDmesh™ II Power MOSFET

in D²PAK, TO-220FP, I²PAK, TO-220 and TO-247

Features

V_DSS

(@Tjmax)

R_DS(on)

max.

Order codes

I_D

STB22NM60N

STF22NM60N

STI22NM60N

STP22NM60N

STW22NM60N

650 V

< 0.22 Ω

16 A

D²PAK

TO-220FP

I²PAK

■ 100% avalanche tested

TO-220

■ Low input capacitance and gate charge

■ Low gate input resistance

TO-247

Application

Figure 1.

Internal schematic diagram

Switching applications

$ꢅꢆꢇ

Description

These devices are made using the second

generation of MDmesh™ technology. This

revolutionary Power MOSFET associates a new

vertical structure to the company’s strip layout to

yield one of the world’s lowest on-resistance and

gate charge. It is therefore suitable for the most

demanding high efficiency converters.

'ꢅꢁꢇ

3ꢅꢈꢇ

!-ꢀꢁꢂꢃꢄVꢁ

Table 1.

Device summary

Order codes

Marking

Package

D²PAK

Packaging

STB22NM60N

STF22NM60N

STI22NM60N

STP22NM60N

STW22NM60N

Tape and reel

TO-220FP

I²PAK

22NM60N

Tube

TO-220

TO-247

January 2011

Doc ID 15853 Rev 4

1/23

www.st.com

Contents

STB/F/I/P/W22NM60N

Contents

Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1

Electrical characteristics (curves)

. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Test circuits

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

2/23

Doc ID 15853 Rev 4

STB/F/I/P/W22NM60N

Electrical ratings

Table 2.

Symbol

Absolute maximum ratings

Parameter

Value

Unit

D²PAK

I²PAK

TO-220

TO-247

TO-220FP

V_GS

I_D

Gate- source voltage

Drain current (continuous) at T_C= 25 °C

Drain current (continuous) at T_C= 100 °C

Drain current (pulsed)

16 ⁽¹⁾

10 ⁽¹⁾

64 ⁽¹⁾

I_D

(2)

I_DM

P_TOT

Total dissipation at T_C= 25 °C

125

dv/dt⁽³⁾Peak diode recovery voltage slope

V/ns

Insulation withstand voltage (RMS) from all

V_ISO

three leads to external heat sink

(t=1 s;T_C=25 °C)

2500

T_J

Operating junction temperature

Storage temperature

-55 to 150

°C

T_stg

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. I_SD≤ 16 A, di/dt ≤ 400 A/µs, V_DSpeak≤V_(BR)DSS, V_DD= 80% V_(BR)DSS

Table 3.

Symbol

Thermal data

Parameter

Value

D²PAK I²PAK TO-220 TO-247 TO-220FP

Unit

Thermal resistance junction-case

max.

R_thj-case

R_thj-amb

4.17

62.5

°C/W

Thermal resistance junction-

ambient max.

62.5

Thermal resistance junction-pcb

max.

(1)

R_thj-pcb

Maximum lead temperature for

soldering purpose

T_J

300

1. When mounted on 1inch² FR-4 board, 2 oz Cu

Table 4.

Symbol

Thermal data

Parameter

Avalanche current, repetitive or not-

Value

Unit

I_AR

repetitive (pulse width limited by T_Jmax)

Single pulse avalanche energy

E_AS

300

(starting T_J= 25 °C, I_D= I_AR, V_DD= 50 V)

Doc ID 15853 Rev 4

3/23

Electrical characteristics

STB/F/I/P/W22NM60N

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 5.

Symbol

On /off states

Parameter

Test conditions

I_D= 1 mA, V_GS= 0

_DS= Max rating

Min.

Typ.

Max. Unit

Drain-source

breakdown voltage

V_(BR)DSS

600

Zero gate voltage

µA

I_DSS

drain current (V_GS= 0) V_DS= Max rating, T_C=125 °C

100

Gate-body leakage

I_GSS

V_GS

25 V

100

current (V_DS= 0)

V_GS(th)

R_DS(on)

Gate threshold voltage V_DS= V_GS, I_D= 250 µA

Static drain-source on

V_GS= 10 V, I_D= 8 A

0.2

0.22

Ω

resistance

Table 6.

Symbol

Dynamic

Parameter

Test conditions

Min.

Typ.

Max. Unit

Input capacitance

C_iss

C_oss

C_rss

1330

Output capacitance

V_DS= 50 V, f = 1 MHz,

V_GS= 0

Reverse transfer

capacitance

4.6

Output equivalent

capacitance

(1)

C_{oss eq.}

V_DS= 0 to 480 V, V_GS= 0

181

4.7

R_g

Gate input resistance f=1 MHz open drain

Ω

Q_g

Q_gs

Q_gd

Total gate charge

Gate-source charge

Gate-drain charge

V_DD= 480 V, I_D= 16 A,

V_GS= 10 V

(see Figure 18)

1. C_{oss eq.}is defined as a constant equivalent capacitance giving the same charging time as C_osswhen V_DS

increases from 0 to 80% V_DS

4/23

Doc ID 15853 Rev 4

STB/F/I/P/W22NM60N

Electrical characteristics

Min. Typ. Max Unit

Table 7.

Symbol

Switching times

Parameter

Test conditions

t_d(on)

t_r(v)

t_d(off)

t_f(i)

Turn-on delay time

Voltage rise time

Turn-off delay time

Fall time

V_DD= 300 V, I_D= 8 A,

R_G= 4.7 Ω, V_GS= 10 V

(see Figure 17)

Table 8.

Symbol

Source drain diode

Parameter

Test conditions

Min. Typ. Max Unit

I_SD

Source-drain current

(1)

I_SDM

Source-drain current (pulsed)

(2)

V_SD

Forward on voltage

I_SD= 16 A, V_GS= 0

1.6

t_rr

Reverse recovery time

Reverse recovery charge

Reverse recovery current

I_SD= 16 A, di/dt = 100 A/µs

V_DD= 60 V

296

µC

Q_rr

I_RRM

(see Figure 19)

26.8

t_rr

Reverse recovery time

Reverse recovery charge

Reverse recovery current

I_SD= 16 A, di/dt = 100 A/µs

V_DD= 60 V T_J= 150 °C

(see Figure 19)

350

4.7

µC

Q_rr

I_RRM

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Doc ID 15853 Rev 4

5/23

Electrical characteristics

STB/F/I/P/W22NM60N

2.1

Electrical characteristics (curves)

Figure 2.

Safe operating area for TO-220,

D²PAK, I²PAK

Figure 3.

Thermal impedance for TO-220,

D²PAK, I²PAK

!-ꢀꢋꢂꢀꢁVꢁ

ꢅ!ꢇ

ꢁꢀ

ꢁꢀS

ꢁꢀꢀS

ꢁMS

ꢁ

4Jꢊꢁꢄꢀ #

4Cꢊꢆꢄ #

ꢁꢀMS

3INGLE

PULSE

ꢀꢉꢁ

ꢁꢀ

6$3ꢅ6ꢇ

ꢀꢉꢁ

ꢁ

ꢁꢀꢀ

Figure 4.

Safe operating area for TO-220FP Figure 5.

Thermal impedance for TO-220FP

!-ꢀꢋꢂꢀꢈVꢁ

ꢅ!ꢇ

ꢁꢀ

ꢁꢀS

ꢁꢀꢀS

ꢁ

ꢀꢉꢁ

ꢁMS

ꢁꢀMS

4Jꢊꢁꢄꢀ #

4Cꢊꢆꢄ #

3INGLE

PULSE

ꢀꢉꢀꢁ

ꢁꢀ

6$3ꢅ6ꢇ

ꢀꢉꢁ

ꢁ

ꢁꢀꢀ

Figure 6.

Safe operating area for TO-247

Figure 7.

Thermal impedance for TO-247

!-ꢀꢋꢂꢀꢆVꢁ

ꢅ!ꢇ

ꢁꢀ

ꢁꢀS

ꢁꢀꢀS

ꢁMS

ꢁ

4Jꢊꢁꢄꢀ #

4Cꢊꢆꢄ #

ꢁꢀMS

3INGLE

PULSE

ꢀꢉꢁ

ꢁꢀ

6$3ꢅ6ꢇ

ꢀꢉꢁ

ꢁ

ꢁꢀꢀ

6/23

Doc ID 15853 Rev 4

STB/F/I/P/W22NM60N

Electrical characteristics

Figure 8.

Output characteristics

Figure 9.

Transfer characteristics

!-ꢀꢋꢂꢀꢂVꢁ

!-ꢀꢋꢂꢀꢄVꢁ

ꢅ!ꢇ

ꢂꢀ

6$3ꢊꢁꢄ6

6'3ꢊꢁꢀ6

ꢂꢀ

ꢈꢄ

ꢈꢀ

ꢆꢄ

ꢆꢀ

ꢁꢄ

ꢁꢀ

ꢈꢄ

ꢈꢀ

ꢆꢄ

ꢆꢀ

ꢁꢄ

ꢁꢀ

ꢃ6

ꢋ6

ꢄ

ꢀ

ꢄ

ꢄ6

ꢀ

ꢄ

ꢆ

ꢆꢀ 6$3ꢅ6ꢇ

ꢌ

ꢁꢀ 6^'3ꢅ6ꢇ

ꢁꢀ

ꢁꢄ

ꢀ

ꢂ

ꢋ

Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance

!-ꢀꢋꢂꢀꢋVꢁ

!-ꢀꢋꢂꢀꢃVꢁ

6'3

ꢅ6ꢇ

2$3ꢅONꢇ

ꢅ/HMꢇ

6'3

6$$ꢊꢂꢌꢀ6

)$ꢊꢁꢋ!

6$3

ꢁꢆ

ꢁꢀ

ꢌ

ꢄꢀꢀ

ꢂꢀꢀ

ꢈꢀꢀ

ꢀꢉꢆꢋ

ꢀꢉꢆꢂ

ꢀꢉꢆꢆ

ꢀꢉꢆꢀ

ꢀꢉꢁꢌ

6'3 ꢊ ꢁꢀ 6

ꢋ

ꢆꢀꢀ

ꢁꢀꢀ

ꢀ

ꢀꢉꢁꢋ

ꢀꢉꢁꢂ

ꢂ

ꢆ

ꢀ

ꢀꢉꢁꢆ

ꢀꢉꢁꢀ

ꢆꢀ

ꢂꢀ

ꢈꢀ

ꢀ

ꢄꢀ

1^GꢅN#ꢇ

ꢋ

)$ꢅ!ꢇ

ꢁꢂ ꢁꢋ

ꢀ

ꢁꢀ

ꢆ

ꢂ

ꢌ

ꢁꢀ

ꢁꢆ

Figure 12. Capacitance variations

Figure 13. Output capacitance stored energy

!-ꢀꢋꢂꢀꢌVꢁ

!-ꢀꢋꢂꢀꢍVꢁ

%OSS

ꢅP&ꢇ

ꢅ*ꢇ

ꢌ

#ISS

ꢁꢀꢀꢀ

ꢁꢀꢀ

ꢃ

ꢋ

ꢄ

ꢂ

ꢈ

ꢆ

#OSS

#RSS

ꢁꢀ

ꢁ

ꢀ

ꢀꢉꢁ

ꢁꢀꢀ

ꢆꢀꢀ

ꢂꢀꢀ ꢄꢀꢀ

ꢁ

ꢁꢀ

6$3ꢅ6ꢇ

ꢁꢀꢀ

ꢈꢀꢀ

6$3ꢅ6ꢇ

Doc ID 15853 Rev 4

7/23

Electrical characteristics

STB/F/I/P/W22NM60N

Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs

vs temperature temperature

AM06410v1

AM06411v1

GS(th)

(norm)

DS(on)

(norm)

ID=250µA

1.10

1.00

0.90

2.10

1.70

1.30

ID=8A

0.80

0.90

0.50

0.70

-50

-25

25 50 75

(°C)

25 50 75

TJ(°C)

100 125

Figure 16. Normalized B

vs temperature

VDSS

!-ꢀꢋꢂꢁꢈVꢁ

"6$33

ꢅNORMꢇ

ꢁꢉꢀꢃ

)$ꢊꢁM!

ꢁꢉꢀꢄ

ꢁꢉꢀꢈ

ꢁꢉꢀꢁ

ꢀꢉꢍꢍ

ꢀꢉꢍꢃ

ꢀꢉꢍꢄ

ꢀꢉꢍꢈ

ꢎꢄꢀ

ꢎꢆꢄ

ꢀ

ꢆꢄ ꢄꢀ ꢃꢄ

4^*ꢅ #ꢇ

ꢁꢀꢀ

8/23

Doc ID 15853 Rev 4

STB/F/I/P/W22NM60N

Test circuits

Figure 17. Switching times test circuit for

resistive load

Figure 18. Gate charge test circuit

VDD

12V

47kΩ

1kΩ

100nF

2200

3.3

µF

IG=CONST

V^DD

100Ω

Vⁱ=20V=VGMAX

D.U.T.

V^G

VGS

2200

µF

D.U.T.

2.7kΩ

47kΩ

1kΩ

AM01468v1

AM01469v1

Figure 19. Test circuit for inductive load

switching and diode recovery times

Figure 20. Unclamped inductive load test

circuit

FAST

DIODE

L=100µH

2200

µF

D.U.T.

3.3

µF

VDD

3.3

µF

1000

µF

V^DD

Ω

R^G

D.U.T.

AM01470v1

AM01471v1

Figure 21. Unclamped inductive waveform

Figure 22. Switching time waveform

ton

toff

tdoff

V(BR)DSS

tdon

90%

10%

90%

IDM

10%

VDS

VDD

90%

V^GS

10%

AM01472v1

AM01473v1

Doc ID 15853 Rev 4

9/23

Package mechanical data

STB/F/I/P/W22NM60N

Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK packages, depending on their level of environmental compliance. ECOPACK

specifications, grade definitions and product status are available at: www.st.com. ECOPACK

is an ST trademark.

10/23

Doc ID 15853 Rev 4

STB/F/I/P/W22NM60N

Package mechanical data

Table 9.

Dim.

TO-220FP mechanical data

Min.

Typ.

Max.

4.4

2.5

4.6

2.7

2.5

2.75

0.7

0.45

0.75

1.15

4.95

2.4

1.70

5.2

2.7

10.4

Dia

28.6

9.8

2.9

15.9

30.6

10.6

3.6

16.4

9.3

3.2

Figure 23. TO-220FP drawing

Dia

7012510_Rev_K

Doc ID 15853 Rev 4

11/23

Package mechanical data

STB/F/I/P/W22NM60N

Table 10. D²PAK (TO-263) mechanical data

Dim.

Min.

Typ.

Max.

4.40

0.03

0.70

1.14

0.45

1.23

8.95

7.50

4.60

0.23

0.93

1.70

0.60

1.36

9.35

10.40

8.50

2.54

4.88

5.28

15.85

2.69

2.79

1.40

1.75

2.49

2.29

1.27

1.30

0.4

0°

8°

12/23

Doc ID 15853 Rev 4

STB/F/I/P/W22NM60N

Figure 24. D²PAK (TO-263) drawing

Package mechanical data

0079457_R

Doc ID 15853 Rev 4

13/23

Package mechanical data

STB/F/I/P/W22NM60N

Table 11. TO-220 type A mechanical data

Dim.

Min.

Typ.

Max.

4.40

0.61

1.14

0.48

15.25

4.60

0.88

1.70

0.70

15.75

1.27

10.40

2.70

5.15

1.32

6.60

2.72

2.40

4.95

1.23

6.20

2.40

L20

L30

∅P

3.50

3.93

16.40

28.90

3.75

2.65

3.85

2.95

14/23

Doc ID 15853 Rev 4

STB/F/I/P/W22NM60N

Figure 25. TO-220 type A drawing

Package mechanical data

0015988_typeA_Rev_S

Doc ID 15853 Rev 4

15/23

Package mechanical data

STB/F/I/P/W22NM60N

Table 12. TO-247 mechanical data

Dim.

Min.

Typ.

Max.

4.85

2.20

1.0

5.15

2.60

1.40

2.40

3.40

0.80

20.15

15.75

2.0

3.0

0.40

19.85

15.45

5.45

18.50

5.50

14.20

3.70

14.80

4.30

∅P

∅R

3.55

4.50

3.65

5.50

16/23

Doc ID 15853 Rev 4

STB/F/I/P/W22NM60N

Figure 26. TO-247 drawing

Package mechanical data

0075325_F

Doc ID 15853 Rev 4

17/23

Package mechanical data

STB/F/I/P/W22NM60N

Table 13. I²PAK (TO-262) mechanical data

mm.

typ

DIM.

min.

max.

4.40

2.40

0.61

1.14

0.49

1.23

8.95

2.40

4.95

4.60

2.72

0.88

1.70

0.70

1.32

9.35

2.70

5.15

10.40

3.50

1.27

3.93

1.40

18/23

Doc ID 15853 Rev 4

STB/F/I/P/W22NM60N

Figure 27. I²PAK (TO-262) drawing

Package mechanical data

0004982_Rev_H

Doc ID 15853 Rev 4

19/23

Packaging mechanical data

STB/F/I/P/W22NM60N

Packaging mechanical data

Table 14. D²PAK (TO-263) tape and reel mechanical data

Tape

Reel

Dim.

Min.

Max.

Min.

Max.

10.5

15.7

1.5

10.7

15.9

1.6

330

1.5

12.8

20.2

24.4

100

13.2

26.4

30.4

1.59

1.65

11.4

4.8

1.61

1.85

11.6

5.0

3.9

4.1

11.9

1.9

12.1

2.1

Base qty

1000

Bulk qty

0.25

23.7

0.35

24.3

(a)

Figure 28. D²PAK footprint

16.90

12.20

5.08

1.60

3.50

9.75

Footprint

a. All dimension are in millimeters

20/23

Doc ID 15853 Rev 4

STB/F/I/P/W22NM60N

Figure 29. Tape

Packaging mechanical data

10 pitches cumulative

tolerance on tape +/- 0.2 mm

Top cover

tape

User direction of feed

Bending radius

User direction of feed

AM08852v2

Figure 30. Reel

REEL DIMENSIONS

40mm min.

Access hole

At sl ot location

G measured at hub

Full radius

Tape slot

in core for

tape start 25 mm min.

width

AM08851v2

Doc ID 15853 Rev 4

21/23

Revision history

STB/F/I/P/W22NM60N

Revision history

Table 15. Document revision history

Date

Revision

Changes

02-Jul-2009

18-Feb-2010

27-Aug-2010

05-Nov-2011

First release.

Document status promoted from preliminary data to datasheet.

New package, mechanical data has been inserted: I²PAK.

Some value changed in Table 5: On /off states.

22/23

Doc ID 15853 Rev 4

STB/F/I/P/W22NM60N

Please Read Carefully:

Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the

right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any

time, without notice.

All ST products are sold pursuant to ST’s terms and conditions of sale.

Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no

liability whatsoever relating to the choice, selection or use of the ST products and services described herein.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this

document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products

or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such

third party products or services or any intellectual property contained therein.

UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED

WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED

WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS

OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.

UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT

RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING

APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,

DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE

GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.

Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void

any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any

liability of ST.

ST and the ST logo are trademarks or registered trademarks of ST in various countries.

Information in this document supersedes and replaces all information previously supplied.

The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.

STMicroelectronics group of companies

Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -

Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America

www.st.com

Doc ID 15853 Rev 4

23/23

STP22NM60N [STMICROELECTRONICS]

相关型号：

STP22NS25Z

STP2301

STP2301_V1

STP23NM50N

STP23NM60N

STP23NM60ND

STP24DP05

STP24DP05BTR

STP24N60M2

STP24NF10

STP24NM60N

STP24NM65N