STP55NE06 [STMICROELECTRONICS]
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET; N - 沟道增强型单一特征尺寸功率MOSFET
| 型号： | STP55NE06 |
| 厂家： | 
ST |
| 描述： | N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET |
| 文件： | 总9页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP55NE06
STP55NE06FP
N - CHANNEL ENHANCEMENT MODE
” SINGLE FEATURE SIZE ” POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STP55NE06
STP55NE06FP
60 V
60 V
< 0.022 Ω
< 0.022 Ω
55 A
30 A
■
■
■
■
■
■
TYPICAL RDS(on) = 0.019 Ω
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE 100 oC
HIGH dv/dt CAPABILITY
3
3
APPLICATION ORIENTED
CHARACTERIZATION
2
2
1
1
DESCRIPTION
TO-220
TO-220FP
This Power Mosfet is the latest development of
SGS-THOMSON unique ”Single Feature Size”
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturingreproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
DC MOTOR CONTROL
DC-DC & DC-AC CONVERTERS
SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
STP55NE06 STP55NE06FP
Unit
VDS
VDGR
VGS
ID
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
60
60
V
V
± 20
V
55
39
30
21
A
ID
A
I
DM(• )
220
130
0.96
220
35
A
Ptot
Total Dissipation at Tc = 25 oC
W
W/oC
Derating Factor
0.27
2000
VISO
Insulation Withstand Voltage (DC)
Peak Diode Recovery voltage slope
Storage Temperature
V
dv/dt
Tstg
Tj
7
V/ns
oC
oC
-65 to 175
175
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
(1) ISD ≤ 55 A,di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, T ≤ TJMAX
j
1/9
January 1998
STP55NE06/FP
THERMAL DATA
TO-220
TO-220FP
Rthj-case Thermal Resistance Junction-case
Max
1.15
4.28
oC/W
Rthj-amb Thermal Resistance Junction-ambient
Rthc-sink Thermal Resistance Case-sink
Max
Typ
62.5
0.5
300
oC/W
oC/W
oC
Tl
Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
55
A
(pulse width limited by Tj max, δ < 1%)
EAS
Single Pulse Avalanche Energy
200
mJ
(starting Tj = 25 oC, ID = IAR, VDD = 25 V)
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS Drain-source
Breakdown Voltage
Zero Gate Voltage
Parameter
Test Conditions
ID = 250 µA VGS = 0
Min.
Typ.
Max.
Unit
60
V
IDSS
VDS = Max Rating
1
10
µA
µA
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125
oC
IGSS
Gate-body Leakage
Current (VDS = 0)
± 100
nA
VGS = ± 20 V
ON ( )
Symbol
Parameter
Test Conditions
VDS = VGS ID = 250 µA
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold
Voltage
2
3
4
V
RDS(on)
ID(on)
Static Drain-source On VGS = 10V ID = 27.5 A
Resistance
0.019 0.022
Ω
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
55
A
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
VDS > ID(on) x RDS(on)max ID =27.5 A
Min.
Typ.
Max.
Unit
gfs ( )
25
35
S
Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V f = 1 MHz VGS = 0
3050
380
100
4000
500
130
pF
pF
pF
2/9
STP55NE06/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Turn-on Time
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
VDD = 30 V
G =4.7 W
ID = 27.5 A
VGS = 10 V
30
120
40
160
ns
ns
Rise Time
R
(see test circuit, figure 3)
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 48 V ID = 55 A VGS = 10 V
80
13
25
105
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 48 V ID = 55 A
RG =4.7 Ω VGS = 10 V
(see test circuit, figure 5)
20
50
75
30
70
100
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (• )
Source-drain Current
Source-drain Current
(pulsed)
55
220
A
A
VSD ( ) Forward On Voltage
ISD = 60 A VGS = 0
1.5
V
trr
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
110
430
7.5
ns
ISD = 55 A
VDD = 30 V
(see test circuit, figure 5)
di/dt = 100 A/µs
Tj = 150 oC
Qrr
µC
IRRM
A
( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
3/9
STP55NE06/FP
Thermal Impedance for TO-220
Thermal Impedance forTO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
4/9
STP55NE06/FP
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
STP55NE06/FP
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/9
STP55NE06/FP
TO-220 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
MAX.
0.181
0.051
0.107
A
C
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
L2
Dia.
L5
L9
L7
L6
L4
P011C
7/9
STP55NE06/FP
TO-220FP MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.4
TYP.
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L6
L7
Ø
16
0.630
28.6
9.8
15.9
9
30.6
10.6
16.4
9.3
1.126
0.385
0.626
0.354
0.118
1.204
0.417
0.645
0.366
0.126
3
3.2
L3
L6
L7
¯
1 2 3
L4
L2
8/9
STP55NE06/FP
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise underany patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics productsare notauthorized for use as criticalcomponents in life supportdevices or systems withoutexpress
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printedin Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta- Morocco - The Netherlands -
Singapore - Spain- Sweden- Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
9/9
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