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STP7NE10 [STMICROELECTRONICS]

N - CHANNEL 100V - 0.3 ohm - 7A - TO-220 STripFET POWER MOSFET; N - CHANNEL 100V - 0.3欧姆 - 7A - TO- 220的STripFET功率MOSFET
STP7NE10
型号： STP7NE10
厂家： ST    ST
描述：

N - CHANNEL 100V - 0.3 ohm - 7A - TO-220 STripFET POWER MOSFET
N - CHANNEL 100V - 0.3欧姆 - 7A - TO- 220的STripFET功率MOSFET
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STP7NE10  
®
N - CHANNEL 100V - 0.3 Ω - 7A - TO-220  
STripFET POWER MOSFET  
PRELIMINARY DATA  
TYPE  
VDSS  
RDS(on)  
ID  
STP7NE10  
100 V  
< 0.4 Ω  
7 A  
■
■
■
■
■
TYPICAL RDS(on) = 0.3 Ω  
EXCEPTIONAL dv/dt CAPABILITY  
AVALANCHE RUGGED TECHNOLOGY  
100 % AVALANCHE TESTED  
APPLICATION ORIENTED  
3
CHARACTERIZATION  
2
1
DESCRIPTION  
This Power MOSFET is the latest development of  
STMicroelectronics unique " Single Feature  
Size " strip-based process. The resulting tran-  
sistor shows extremely high packing density for  
low on-resistance, rugged avalanche charac-  
teristics and less critical alignment steps therefore  
a remarkable manufacturing reproducibility.  
TO-220  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
■
■
■
DC MOTOR CONTROL (DISK DRIVES,etc.)  
DC-DC & DC-AC CONVERTERS  
SYNCHRONOUS RECTIFICATION  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
VDGR  
VGS  
ID  
Parameter  
Value  
Unit  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 kΩ)  
Gate-source Voltage  
100  
V
V
100  
± 20  
V
o
Drain Current (continuous) at Tc = 25 C  
7
A
o
ID  
Drain Current (continuous) at Tc = 100 C  
4.9  
A
I
DM(•)  
Drain Current (pulsed)  
28  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
45  
W
Derating Factor  
0.3  
6
W/oC  
V/ns  
oC  
oC  
dv/dt(1) Peak Diode Recovery voltage slope  
Tstg  
Storage Temperature  
-65 to 150  
Tj  
Max. Operating Junction Temperature  
175  
(•) Pulse width limited by safe operating area  
(1) ISD ≤7 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX  
1/5  
October 1999  
STP7NE10  
THERMAL DATA  
Rthj-case Thermal Resistance Junction-case  
Rthj-amb Thermal Resistance Junction-ambient  
Rthc-sink Thermal Resistance Case-sink  
Max  
Max  
Typ  
3.33  
100  
1.5  
oC/W  
oC/W  
oC/W  
oC  
Tl  
Maximum Lead Temperature For Soldering Purpose  
275  
AVALANCHE CHARACTERISTICS  
Symbol  
Parameter  
Max Value  
Unit  
IAR  
Avalanche Current, Repetitive or Not-Repetitive  
(pulse width limited by Tj max)  
7
A
EAS  
Single Pulse Avalanche Energy  
(starting Tj = 25 C, ID = IAR, VDD = 30 V)  
40  
mJ  
o
(Tcase = 25 oC unless otherwise specified)  
ELECTRICAL CHARACTERISTICS  
OFF  
Symbol  
V(BR)DSS Drain-source  
Breakdown Voltage  
Zero Gate Voltage  
Drain Current (VGS = 0) VDS = Max Rating  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
100  
V
I
D = 250 µA VGS = 0  
IDSS  
IGSS  
VDS = Max Rating  
1
10  
µA  
µA  
Tc = 100 oC  
Gate-body Leakage  
Current (VDS = 0)  
± 100  
nA  
VGS = ± 20 V  
ON ( )  
Symbol  
Parameter  
Test Conditions  
DS = VGS ID = 250 µA  
Min.  
Typ.  
Max.  
Unit  
VGS(th)  
Gate Threshold  
Voltage  
2
3
4
V
V
RDS(on)  
Static Drain-source On VGS = 10 V ID = 3.5 A  
Resistance  
0.32  
0.4  
Ω
ID(on)  
On State Drain Current VDS > ID(on) x RDS(on)max  
7
A
V
GS = 10 V  
DYNAMIC  
Symbol  
Parameter  
Forward  
Test Conditions  
VDS > ID(on) x RDS(on)max ID =2.5 A  
Min.  
Typ.  
Max.  
Unit  
gfs ( )  
2.5  
S
Transconductance  
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
Reverse Transfer  
Capacitance  
V
DS = 25 V f = 1 MHz VGS = 0  
305  
45  
21  
pF  
pF  
pF  
2/5  
®
STP7NE10  
ELECTRICAL CHARACTERISTICS (continued)  
SWITCHING ON  
Symbol  
Parameter  
Turn-on Time  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
td(on)  
tr  
VDD = 50 V  
RG = 4.7 Ω  
ID = 3.5 A  
VGS = 5 V  
6.5  
15  
ns  
ns  
Rise Time  
Qg  
Qgs  
Qgd  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
VDD = 80 V ID = 5 A VGS = 5 V  
14  
6
4
18  
nC  
nC  
nC  
SWITCHING OFF  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
td(Voff)  
tf  
Turn-off Delay Time  
Fall Time  
VDD = 50 V  
RG = 4.7 Ω  
ID = 3.5A  
VGS = 10 V  
25  
7
ns  
ns  
tr(Voff)  
tf  
tc  
Off-voltage Rise Time  
Fall Time  
Cross-over Time  
V
DD=80V  
ID=7A  
VGS = 10 V  
7
8
16  
ns  
ns  
ns  
RG = 4.7 Ω  
SOURCE DRAIN DIODE  
Symbol  
Parameter  
Source-drain Current  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
ISD  
7
28  
A
A
ISDM(• ) Source-drain Current  
(pulsed)  
VSD ( ) Forward On Voltage  
ISD = 8 A VGS = 0  
1.5  
V
trr  
Reverse Recovery  
Time  
Reverse Recovery  
Charge  
Reverse Recovery  
Current  
75  
210  
5.5  
ns  
I
SD = 5 A  
di/dt = 100 A/µs  
Tj = 150 C  
o
VDD = 50 V  
Qrr  
µC  
IRRM  
A
( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %  
(•) Pulse width limited by safe operating area  
3/5  
®
STP7NE10  
TO-220 MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
4.40  
1.23  
2.40  
TYP.  
MAX.  
4.60  
1.32  
2.72  
MIN.  
0.173  
0.048  
0.094  
MAX.  
0.181  
0.051  
0.107  
A
C
D
D1  
E
1.27  
0.050  
0.49  
0.61  
1.14  
1.14  
4.95  
2.4  
0.70  
0.88  
1.70  
1.70  
5.15  
2.7  
0.019  
0.024  
0.044  
0.044  
0.194  
0.094  
0.393  
0.027  
0.034  
0.067  
0.067  
0.203  
0.106  
0.409  
F
F1  
F2  
G
G1  
H2  
L2  
L4  
L5  
L6  
L7  
L9  
DIA.  
10.0  
10.40  
16.4  
0.645  
13.0  
2.65  
15.25  
6.2  
14.0  
2.95  
15.75  
6.6  
0.511  
0.104  
0.600  
0.244  
0.137  
0.147  
0.551  
0.116  
0.620  
0.260  
0.154  
0.151  
3.5  
3.93  
3.85  
3.75  
L2  
Dia.  
L5  
L9  
L7  
L6  
L4  
P011C  
4/5  
®
STP7NE10  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is  
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are  
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products  
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is a trademark of STMicroelectronics  
© 1999 STMicroelectronics – Printed in Italy – All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands -  
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.  
http://www.st.com  
.
5/5  
®

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