STP90N15F4 [STMICROELECTRONICS]
90A, 150V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN;型号: | STP90N15F4 |
厂家: | ST |
描述: | 90A, 150V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN 局域网 开关 脉冲 晶体管 |
文件: | 总12页 (文件大小:466K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
STH90N15F4-2
STP90N15F4
N-channel 150 V, 12.5 mΩ, 95 A TO-220, H2PAK
STripFET™ DeepGATE™ Power MOSFET
Preliminary data
Features
Type
VDSS
RDS(on) max
ID
STH90N15F4-2
STP90N15F4
150 V
150 V
< 15.6 mΩ
< 16 mΩ
95 A
90 A
2
3
1
■ Extremely low on-resistance R
■ 100% avalanche tested
3
DS(on)
3
2
1
H²PAK
TO-220
Application
■ Switching applications
Description
Figure 1.
Internal schematic diagram
This STripFET™ DeepGATE™ Power MOSFET
technology is among the latest improvements,
which have been especially tailored to minimize
on-state resistance, with a new gate structure,
providing superior switching performance.
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Table 1.
Device summary
Order codes
Marking
Package
Packaging
STH90N15F4-2
STP90N15F4
90N15F4
90N15F4
H²PAK
Tape and reel
Tube
TO-220
July 2009
Doc ID 15873 Rev 2
1/12
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
www.st.com
12
Contents
STH90N15F4-2, STP90N15F4
Contents
1
2
3
4
5
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
Doc ID 15873 Rev 2
STH90N15F4-2, STP90N15F4
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
TO-220
H²PAK
VDS
VGS
ID
Drain-source voltage (VGS = 0)
Gate-source voltage
150
20
V
V
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
90
65
95
66
A
ID
A
(1)
IDM
360
380
A
PTOT
Total dissipation at TC = 25 °C
Derating factor
315
2.1
W
W/°C
mJ
(2)
EAS
Single pulse avalanche energy
Storage temperature
TBD
Tstg
Tj
– 55 to 175
°C
Max. operating junction temperature
1. Pulse width limited by safe operating area
2. Starting Tj= 25 °C, ID= 50 A, VDD= 60 V
Table 3.
Symbol
Thermal data
Value
Parameter
Unit
TO-220
H²PAK
Rthj-case Thermal resistance junction-case max
Rthj-pcb Thermal resistance junction-pcb max
0.48
300
°C/W
°C/W
°C/W
35 (1)
Rthj-a
Tl
Thermal resistance junction-ambient max
62.5
Maximum lead temperature for soldering
purpose
°C
1. When mounted on 1inch² FR-4 board, 2 oz Cu.
Doc ID 15873 Rev 2
3/12
Electrical characteristics
STH90N15F4-2, STP90N15F4
2
Electrical characteristics
(T
= 25 °C unless otherwise specified)
CASE
Table 4.
Symbol
On/off states
Parameter
Test conditions
Min.
Typ.
Max. Unit
Drain-source
V(BR)DSS
ID = 250 µA, VGS = 0
150
V
Breakdown voltage
V
DS = max rating
1
µA
µA
Zero gate voltage
IDSS
Drain current (VGS = 0)
VDS = max rating,TC=125 °C
100
Gate-body leakage
current (VDS = 0)
IGSS
VGS
=
20 V
100
nA
VGS(th) Gate threshold voltage
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 45 A (1)
2
4
V
13
16
mΩ
mΩ
Static drain-source on
RDS(on)
V
GS = 10 V, ID = 45 A (2)
12.5
15.6
resistance
1. for TO-220
2. for H²PAK
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ. Max. Unit
Ciss
Input capacitance
Output capacitance
10.4
750
nF
pF
VDS = 25 V, f = 1 MHz,
Coss
-
-
VGS = 0
Reverse transfer
capacitance
Crss
288
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
175
TBD
TBD
nC
nC
nC
VDD = 80 V, ID = 90 A,
VGS = 10 V
-
-
(see Figure 3)
Table 6.
Symbol
Switching times
Parameter
Test conditions
Min.
Typ.
Max. Unit
VDD = 75 V, ID = 45 A
RG = 4.7 Ω VGS = 10 V
(see Figure 2)
td(on)
tr
Turn-on delay time
Rise time
TBD
TBD
ns
-
-
ns
VDD = 75 V, ID = 45 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 2)
td(off)
tf
Turn-off-delay time
Fall time
TBD
TBD
ns
-
-
ns
4/12
Doc ID 15873 Rev 2
STH90N15F4-2, STP90N15F4
Electrical characteristics
Min. Typ. Max Unit
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
TO-220
ISD
Source-drain current
-
-
-
-
-
90
360
95
A
A
A
A
V
(1)
ISDM
Source-drain current (pulsed)
Source-drain current
ISD
H²PAK
(2)
ISDM
Source-drain current (pulsed)
Forward on voltage
380
TBD
(3)
VSD
ISD = 90 A, VGS = 0
ISD = 90 A, VDD = 25 V
di/dt = 100 A/µs,
Tj = 150 °C
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
TBD
TBD
TBD
ns
nC
A
Qrr
-
IRRM
(see Figure 4)
1. Pulse width limited by safe operating area.
2. Pulse width limited by safe operating area.
3. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Doc ID 15873 Rev 2
5/12
Test circuits
STH90N15F4-2, STP90N15F4
3
Test circuits
Figure 2.
Switching times test circuit for
resistive load
Figure 3.
Gate charge test circuit
VDD
12V
47kΩ
100nF
1kΩ
2200
3.3
µF
RL
µF
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
D.U.T.
VD
RG
VGS
2200
µF
D.U.T.
VG
2.7kΩ
47kΩ
PW
1kΩ
PW
AM01468v1
AM01469v1
Figure 4.
Test circuit for inductive load
switching and diode recovery times
Figure 5.
Unclamped inductive load test
circuit
L
A
D
A
A
B
FAST
DIODE
L=100µH
VD
G
2200
µF
D.U.T.
3.3
µF
VDD
S
3.3
µF
1000
µF
B
B
VDD
25
Ω
ID
D
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 6.
Unclamped inductive waveform
Figure 7.
Switching time waveform
ton
toff
tdoff
V(BR)DSS
tr
tf
tdon
VD
90%
10%
90%
IDM
10%
VDS
ID
0
0
VDD
VDD
90%
VGS
10%
AM01472v1
AM01473v1
6/12
Doc ID 15873 Rev 2
STH90N15F4-2, STP90N15F4
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Doc ID 15873 Rev 2
7/12
Package mechanical data
STH90N15F4-2, STP90N15F4
Table 8.
Dim.
H²PAK 2 leads mechanical data
mm
Min.
Typ.
Max.
A
A1
C
4.30
0.03
1.17
4.98
0.50
0.78
10.00
7.171
15.30
1.27
4.93
7.45
1.5
4.80
0.20
1.37
5.18
0.90
0.85
10.40
7.971
15.80
1.40
5.23
7.85
1.7
e
E
F
H
H1
L
-
L1
L2
L3
L4
M
R
2.6
2.9
0.20
0°
0.60
8°
V
8/12
Doc ID 15873 Rev 2
STH90N15F4-2, STP90N15F4
Figure 8. H²PAK 2 leads drawing
Package mechanical data
8159712_B
Figure 9.
H²PAK 2 recommended footprint
8159712_B
Doc ID 15873 Rev 2
9/12
Package mechanical data
STH90N15F4-2, STP90N15F4
TO-220 mechanical data
mm
inch
Dim
Min
Typ
Max
Min
Typ
Max
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
0.173
0.024
0.044
0.019
0.6
0.181
0.034
0.066
0.027
0.62
b1
c
D
D1
E
1.27
0.050
10
10.40
2.70
5.15
1.32
6.60
2.72
14
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
3.50
3.93
16.40
0.645
28.90
1.137
3.75
3.85
2.95
0.147
0.104
0.151
0.116
2.65
10/12
Doc ID 15873 Rev 2
STH90N15F4-2, STP90N15F4
Revision history
5
Revision history
Table 9.
Date
Document revision history
Revision
Changes
15-Jun-2009
15-Jul-2009
1
2
First release
Document status promoted from target specification to preliminary
data
Doc ID 15873 Rev 2
11/12
STH90N15F4-2, STP90N15F4
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Doc ID 15873 Rev 2
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