STP90N15F4 [STMICROELECTRONICS]

90A, 150V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN;
STP90N15F4
型号: STP90N15F4
厂家: ST    ST
描述:

90A, 150V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN

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中文:  中文翻译
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STH90N15F4-2  
STP90N15F4  
N-channel 150 V, 12.5 m, 95 A TO-220, H2PAK  
STripFET™ DeepGATE™ Power MOSFET  
Preliminary data  
Features  
Type  
VDSS  
RDS(on) max  
ID  
STH90N15F4-2  
STP90N15F4  
150 V  
150 V  
< 15.6 m  
< 16 mΩ  
95 A  
90 A  
2
3
1
Extremely low on-resistance R  
100% avalanche tested  
3
DS(on)  
3
2
1
PAK  
TO-220  
Application  
Switching applications  
Description  
Figure 1.  
Internal schematic diagram  
This STripFET™ DeepGATE™ Power MOSFET  
technology is among the latest improvements,  
which have been especially tailored to minimize  
on-state resistance, with a new gate structure,  
providing superior switching performance.  
$ꢅꢆꢇ  
'ꢅꢁꢇ  
3ꢅꢈꢇ  
!-ꢀꢁꢂꢃꢄVꢁ  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
STH90N15F4-2  
STP90N15F4  
90N15F4  
90N15F4  
PAK  
Tape and reel  
Tube  
TO-220  
July 2009  
Doc ID 15873 Rev 2  
1/12  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to  
change without notice.  
www.st.com  
12  
Contents  
STH90N15F4-2, STP90N15F4  
Contents  
1
2
3
4
5
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Test circuits  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
2/12  
Doc ID 15873 Rev 2  
STH90N15F4-2, STP90N15F4  
Electrical ratings  
1
Electrical ratings  
Table 2.  
Symbol  
Absolute maximum ratings  
Parameter  
Value  
Unit  
TO-220  
PAK  
VDS  
VGS  
ID  
Drain-source voltage (VGS = 0)  
Gate-source voltage  
150  
20  
V
V
Drain current (continuous) at TC = 25 °C  
Drain current (continuous) at TC = 100 °C  
Drain current (pulsed)  
90  
65  
95  
66  
A
ID  
A
(1)  
IDM  
360  
380  
A
PTOT  
Total dissipation at TC = 25 °C  
Derating factor  
315  
2.1  
W
W/°C  
mJ  
(2)  
EAS  
Single pulse avalanche energy  
Storage temperature  
TBD  
Tstg  
Tj  
– 55 to 175  
°C  
Max. operating junction temperature  
1. Pulse width limited by safe operating area  
2. Starting Tj= 25 °C, ID= 50 A, VDD= 60 V  
Table 3.  
Symbol  
Thermal data  
Value  
Parameter  
Unit  
TO-220  
PAK  
Rthj-case Thermal resistance junction-case max  
Rthj-pcb Thermal resistance junction-pcb max  
0.48  
300  
°C/W  
°C/W  
°C/W  
35 (1)  
Rthj-a  
Tl  
Thermal resistance junction-ambient max  
62.5  
Maximum lead temperature for soldering  
purpose  
°C  
1. When mounted on 1inch² FR-4 board, 2 oz Cu.  
Doc ID 15873 Rev 2  
3/12  
Electrical characteristics  
STH90N15F4-2, STP90N15F4  
2
Electrical characteristics  
(T  
= 25 °C unless otherwise specified)  
CASE  
Table 4.  
Symbol  
On/off states  
Parameter  
Test conditions  
Min.  
Typ.  
Max. Unit  
Drain-source  
V(BR)DSS  
ID = 250 µA, VGS = 0  
150  
V
Breakdown voltage  
V
DS = max rating  
1
µA  
µA  
Zero gate voltage  
IDSS  
Drain current (VGS = 0)  
VDS = max rating,TC=125 °C  
100  
Gate-body leakage  
current (VDS = 0)  
IGSS  
VGS  
=
20 V  
100  
nA  
VGS(th) Gate threshold voltage  
VDS = VGS, ID = 250 µA  
VGS = 10 V, ID = 45 A (1)  
2
4
V
13  
16  
mΩ  
mΩ  
Static drain-source on  
RDS(on)  
V
GS = 10 V, ID = 45 A (2)  
12.5  
15.6  
resistance  
1. for TO-220  
2. for H²PAK  
Table 5.  
Symbol  
Dynamic  
Parameter  
Test conditions  
Min.  
Typ. Max. Unit  
Ciss  
Input capacitance  
Output capacitance  
10.4  
750  
nF  
pF  
VDS = 25 V, f = 1 MHz,  
Coss  
-
-
VGS = 0  
Reverse transfer  
capacitance  
Crss  
288  
pF  
Qg  
Qgs  
Qgd  
Total gate charge  
Gate-source charge  
Gate-drain charge  
175  
TBD  
TBD  
nC  
nC  
nC  
VDD = 80 V, ID = 90 A,  
VGS = 10 V  
-
-
(see Figure 3)  
Table 6.  
Symbol  
Switching times  
Parameter  
Test conditions  
Min.  
Typ.  
Max. Unit  
VDD = 75 V, ID = 45 A  
RG = 4.7 VGS = 10 V  
(see Figure 2)  
td(on)  
tr  
Turn-on delay time  
Rise time  
TBD  
TBD  
ns  
-
-
ns  
VDD = 75 V, ID = 45 A,  
RG = 4.7 , VGS = 10 V  
(see Figure 2)  
td(off)  
tf  
Turn-off-delay time  
Fall time  
TBD  
TBD  
ns  
-
-
ns  
4/12  
Doc ID 15873 Rev 2  
STH90N15F4-2, STP90N15F4  
Electrical characteristics  
Min. Typ. Max Unit  
Table 7.  
Symbol  
Source drain diode  
Parameter  
Test conditions  
TO-220  
ISD  
Source-drain current  
-
-
-
-
-
90  
360  
95  
A
A
A
A
V
(1)  
ISDM  
Source-drain current (pulsed)  
Source-drain current  
ISD  
PAK  
(2)  
ISDM  
Source-drain current (pulsed)  
Forward on voltage  
380  
TBD  
(3)  
VSD  
ISD = 90 A, VGS = 0  
ISD = 90 A, VDD = 25 V  
di/dt = 100 A/µs,  
Tj = 150 °C  
trr  
Reverse recovery time  
Reverse recovery charge  
Reverse recovery current  
TBD  
TBD  
TBD  
ns  
nC  
A
Qrr  
-
IRRM  
(see Figure 4)  
1. Pulse width limited by safe operating area.  
2. Pulse width limited by safe operating area.  
3. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%  
Doc ID 15873 Rev 2  
5/12  
Test circuits  
STH90N15F4-2, STP90N15F4  
3
Test circuits  
Figure 2.  
Switching times test circuit for  
resistive load  
Figure 3.  
Gate charge test circuit  
VDD  
12V  
47k  
100nF  
1kΩ  
2200  
3.3  
µF  
RL  
µF  
IG=CONST  
VDD  
100Ω  
Vi=20V=VGMAX  
D.U.T.  
VD  
RG  
VGS  
2200  
µF  
D.U.T.  
VG  
2.7kΩ  
47kΩ  
PW  
1kΩ  
PW  
AM01468v1  
AM01469v1  
Figure 4.  
Test circuit for inductive load  
switching and diode recovery times  
Figure 5.  
Unclamped inductive load test  
circuit  
L
A
D
A
A
B
FAST  
DIODE  
L=100µH  
VD  
G
2200  
µF  
D.U.T.  
3.3  
µF  
VDD  
S
3.3  
µF  
1000  
µF  
B
B
VDD  
25  
ID  
D
G
RG  
S
Vi  
D.U.T.  
Pw  
AM01470v1  
AM01471v1  
Figure 6.  
Unclamped inductive waveform  
Figure 7.  
Switching time waveform  
ton  
toff  
tdoff  
V(BR)DSS  
tr  
tf  
tdon  
VD  
90%  
10%  
90%  
IDM  
10%  
VDS  
ID  
0
0
VDD  
VDD  
90%  
VGS  
10%  
AM01472v1  
AM01473v1  
6/12  
Doc ID 15873 Rev 2  
STH90N15F4-2, STP90N15F4  
Package mechanical data  
4
Package mechanical data  
In order to meet environmental requirements, ST offers these devices in different grades of  
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK  
specifications, grade definitions and product status are available at: www.st.com. ECOPACK  
is an ST trademark.  
Doc ID 15873 Rev 2  
7/12  
Package mechanical data  
STH90N15F4-2, STP90N15F4  
Table 8.  
Dim.  
PAK 2 leads mechanical data  
mm  
Min.  
Typ.  
Max.  
A
A1  
C
4.30  
0.03  
1.17  
4.98  
0.50  
0.78  
10.00  
7.171  
15.30  
1.27  
4.93  
7.45  
1.5  
4.80  
0.20  
1.37  
5.18  
0.90  
0.85  
10.40  
7.971  
15.80  
1.40  
5.23  
7.85  
1.7  
e
E
F
H
H1  
L
-
L1  
L2  
L3  
L4  
M
R
2.6  
2.9  
0.20  
0°  
0.60  
8°  
V
8/12  
Doc ID 15873 Rev 2  
STH90N15F4-2, STP90N15F4  
Figure 8. PAK 2 leads drawing  
Package mechanical data  
8159712_B  
Figure 9.  
PAK 2 recommended footprint  
8159712_B  
Doc ID 15873 Rev 2  
9/12  
Package mechanical data  
STH90N15F4-2, STP90N15F4  
TO-220 mechanical data  
mm  
inch  
Dim  
Min  
Typ  
Max  
Min  
Typ  
Max  
A
b
4.40  
0.61  
1.14  
0.48  
15.25  
4.60  
0.88  
1.70  
0.70  
15.75  
0.173  
0.024  
0.044  
0.019  
0.6  
0.181  
0.034  
0.066  
0.027  
0.62  
b1  
c
D
D1  
E
1.27  
0.050  
10  
10.40  
2.70  
5.15  
1.32  
6.60  
2.72  
14  
0.393  
0.094  
0.194  
0.048  
0.244  
0.094  
0.511  
0.137  
0.409  
0.106  
0.202  
0.051  
0.256  
0.107  
0.551  
0.154  
e
2.40  
4.95  
1.23  
6.20  
2.40  
13  
e1  
F
H1  
J1  
L
L1  
L20  
L30  
P  
Q
3.50  
3.93  
16.40  
0.645  
28.90  
1.137  
3.75  
3.85  
2.95  
0.147  
0.104  
0.151  
0.116  
2.65  
10/12  
Doc ID 15873 Rev 2  
STH90N15F4-2, STP90N15F4  
Revision history  
5
Revision history  
Table 9.  
Date  
Document revision history  
Revision  
Changes  
15-Jun-2009  
15-Jul-2009  
1
2
First release  
Document status promoted from target specification to preliminary  
data  
Doc ID 15873 Rev 2  
11/12  
STH90N15F4-2, STP90N15F4  
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12/12  
Doc ID 15873 Rev 2  

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