STP9NM60N [STMICROELECTRONICS]

N-channel 600 V, 0.63 ohm, 6.5 A TO-220, TO-220FP, DPAK MDmesh ll Power MOSFET; N沟道600 V ， 0.63欧姆， 6.5 A TO - 220 ， TO- 220FP ， DPAK LL的MDmesh功率MOSFET


型号：	STP9NM60N
厂家：	ST
描述：	N-channel 600 V, 0.63 ohm, 6.5 A TO-220, TO-220FP, DPAK MDmesh ll Power MOSFET N沟道600 V ， 0.63欧姆， 6.5 A TO - 220 ， TO- 220FP ， DPAK LL的MDmesh功率MOSFET 晶体晶体管功率场效应晶体管开关脉冲局域网
文件：	总16页 (文件大小：902K)
中文：	中文翻译
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STD9NM60N

STF9NM60N, STP9NM60N

N-channel 600 V, 0.63 Ω, 6.5 A TO-220, TO-220FP, DPAK

MDmesh™ II Power MOSFET

Features

V_DSS

(@Tjmax)

R_DS(on)

max.

Order codes

I_D

STD9NM60N

STF9NM60N

STP9NM60N

TO-220

TO-220FP

650 V

< 0.745 Ω

6.5 A

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

DPAK

Application

Switching applications

Figure 1.

Internal schematic diagram

Description

$ꢅꢆꢇ

This series of devices is realized with the second

generation of MDmesh™ technology. This

revolutionary Power MOSFET associates a new

vertical structure to the company’s strip layout to

yield one of the world’s lowest on-resistance and

gate charge. It is therefore suitable for the most

demanding high efficiency converters.

'ꢅꢁꢇ

3ꢅꢈꢇ

!-ꢀꢁꢂꢃꢄVꢁ

Table 1.

Device summary

Order codes

Marking

Packages

DPAK

Packaging

STD9NM60N

STF9NM60N

STP9NM60N

Tape and reel

Tube

9NM60N

TO-220FP

TO-220

October 2010

Doc ID 18063 Rev 1

1/16

www.st.com

Contents

STD9NM60N, STF9NM60N, STP9NM60N

Contents

Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1

Electrical characteristics (curves)

. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Test circuits

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

2/16

Doc ID 18063 Rev 1

STD9NM60N, STF9NM60N, STP9NM60N

Electrical ratings

Table 2.

Symbol

Absolute maximum ratings

Value

Parameter

Unit

TO-220, DPAK TO-220FP

V_DS

V_GS

I_D

Drain-source voltage (V_GS= 0)

Gate- source voltage

600

Drain current (continuous) at T_C= 25 °C

Drain current (continuous) at T_C= 100 °C

Drain current (pulsed)

6.5

6.5 ⁽¹⁾

4 ⁽¹⁾

26 ⁽¹⁾

I_D

(2)

I_DM

P_TOT

V_ISO

Total dissipation at T_C= 25 °C

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t=1 s;T_C=25 °C)

2500

dv/dt ⁽³⁾

T_stg

Peak diode recovery voltage slope

Storage temperature

V/ns

°C

- 55 to 150

150

T_j

Max. operating junction temperature

°C

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

≤ 6.5 A, di/dt ≤ 400 A/µs, V = 80% V

DD (BR)DSS

Table 3.

Symbol

Thermal data

Value

Parameter

Unit

DPAK TO-220 TO-220FP

1.79

R_thj-case

Thermal resistance junction-case max

°C/W

°C

Thermal resistance junction-pcb minimum

footprint

(1)

R_thj-pcb

R_thj-amb

T_l

Thermal resistance junction-ambient max

62.5

300

Maximum lead temperature for soldering

purpose

1. When mounted on 1inch² FR-4 board, 2 oz Cu

Table 4.

Symbol

Avalanche characteristics

Parameter

Value

Unit

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj Max)

I_AR

2.5

Single pulse avalanche energy

E_AS

115

(starting Tj = 25 °C, I_D= I_AR, V_DD= 50 V)

Doc ID 18063 Rev 1

3/16

Electrical characteristics

STD9NM60N, STF9NM60N, STP9NM60N

Electrical characteristics

(T_CASE= 25 °C unless otherwise specified)

Table 5.

Symbol

On/off states

Parameter

Test conditions

Min. Typ. Max. Unit

Drain-source

V_(BR)DSS

I_D= 1 mA, V_GS= 0

600

breakdown voltage

Zero gate voltage

V_DS= max rating

µA

I_DSS

drain current (V_GS= 0)

V_DS= max rating, @125 °C

100

Gate-body leakage

current (V_DS= 0)

I_GSS

V_GS

20 V

100

V_GS(th)Gate threshold voltage

V_DS= V_GS, I_D= 250 µA

V_GS= 10 V, I_D= 3.25 A

Static drain-source on

resistance

R_DS(on)

0.63 0.745

Table 6.

Symbol

Dynamic

Parameter

Test conditions

Min. Typ. Max. Unit

Input capacitance

Output capacitance

C_iss

C_oss

C_rss

452

_DS= 50 V, f = 1 MHz,

V_GS= 0

Reverse transfer

capacitance

1.45

Equivalent output

catacitance

(1)

C_{oss eq.}

V_GS= 0, V_DS= 0 to 480 V

V_DD= 480 V, I_D= 6.5 A,

Q_g

Q_gs

Q_gd

Total gate charge

Gate-source charge

Gate-drain charge

17.4

V_GS= 10 V,

(see Figure 18)

9.7

f=1 MHz Gate DC Bias=0

Test signal level=20 mV

open drain

R_g

Gate input resistance

4.8

is defined as a constant equivalent capacitance giving the same charging time as C

when V

oss

oss eq.

increases from 0 to 80% V

4/16

Doc ID 18063 Rev 1

STD9NM60N, STF9NM60N, STP9NM60N

Electrical characteristics

Min. Typ. Max. Unit

Table 7.

Symbol

Switching times

Parameter

Test conditions

t_d(on)

t_r

t_d(off)

t_f

Turn-on delay time

Rise time

V_DD= 480 V, I_D= 6.5 A

R_G= 4.7 ΩV_GS= 10 V

Turn-off delay time

Fall time

52.5

26.7

(see Figure 17)

Table 8.

Symbol

Source drain diode

Parameter

Test conditions

Min. Typ. Max. Unit

I_SD

Source-drain current

6.5

(1)

I_SDM

Source-drain current (pulsed)

(2)

V_SD

Forward on voltage

I_SD= 6.5 A, V_GS= 0

1.6

t_rr

Reverse recovery time

Reverse recovery charge

Reverse recovery current

I_SD= 6.5 A, di/dt = 100 A/µs

264

1.9

µC

Q_rr

V_DD= 60 V

I_RRM

(see Figure 22)

14.6

t_rr

Reverse recovery time

Reverse recovery charge

Reverse recovery current

I_SD= 6.5 A, di/dt = 100 A/µs

324

2.3

µC

Q_rr

V_DD= 60 V, T_j= 150 °C

I_RRM

(see Figure 22)

14.2

1. Pulse width limited by safe operating area

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Doc ID 18063 Rev 1

5/16

Electrical characteristics

STD9NM60N, STF9NM60N, STP9NM60N

Thermal impedance for TO-220

2.1

Electrical characteristics (curves)

Figure 2.

Safe operating area for TO-220

Figure 3.

Figure 5.

Figure 7.

AM08162v1

(A)

10µs

100µs

1ms

10ms

Tj=150°C

Tc=25°C

0.1

Single pulse

0.01

VDS(V)

0.1

100

Figure 4.

Safe operating area for DPAK

Thermal impedance for DPAK

AM08163v1

(A)

10µs

100µs

1ms

10ms

0.1

Tj=150°C

Tc=25°C

Single pulse

0.01

VDS(V)

0.1

100

Figure 6.

Safe operating area for TO-220FP

Thermal impedance for TO-220FP

AM08164v1

(A)

10µs

100µs

1ms

10ms

0.1

Tj=150°C

Tc=25°C

Single pulse

0.01

VDS(V)

0.1

100

6/16

Doc ID 18063 Rev 1

STD9NM60N, STF9NM60N, STP9NM60N

Electrical characteristics

Figure 8.

Output characteristics

Figure 9.

Transfer characteristics

AM08165v1

AM08166v1

(A)

VGS=10V

DS=20V

DS(V)

10 V^GS(V)

Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance

AM08167v1

AM08168v1

(V)

DS(on)

(Ω)

VDS

DD=480V

=6.5A

VGS=10V

0.66

500

400

300

0.65

0.64

0.63

0.62

200

100

0.61

0.60

0.59

(nC)

ID(A)

Figure 12. Capacitance variations

Figure 13. Output capacitance stored energy

AM08169v1

AM08170v1

Eoss

(pF)

(µJ)

3.5

1000

100

2.5

Ciss

1.5

Coss

Crss

0.5

0.1

100

200

400 500

300

DS(V)

100

600 VDS(V)

Doc ID 18063 Rev 1

7/16

Electrical characteristics

STD9NM60N, STF9NM60N, STP9NM60N

Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs

vs temperature temperature

AM08171v1

AM08172v1

GS(th)

DS(on)

(norm)

ID=3.25A

1.10

1.00

0.90

2.1

1.9

1.7

1.5

1.3

1.1

0.80

0.9

0.7

0.5

-50

-25

0.70

-50

-25

25 50 75

J(°C)

25 50 75

TJ(°C)

100

Figure 16. Normalized B_VDSSvs temperature

AM08173v1

BVDSS

(norm)

ID=1mA

1.07

1.05

1.03

1.01

0.99

0.97

0.95

0.93

-50

-25

25 50 75

TJ(°C)

100

8/16

Doc ID 18063 Rev 1

STD9NM60N, STF9NM60N, STP9NM60N

Test circuits

Figure 17. Switching times test circuit for

resistive load

Figure 18. Gate charge test circuit

VDD

12V

47kΩ

1kΩ

100nF

2200

3.3

μF

IG=CONST

V^DD

100Ω

Vⁱ=20V=VGMAX

D.U.T.

V^G

VGS

2200

μF

D.U.T.

2.7kΩ

47kΩ

1kΩ

AM01468v1

AM01469v1

Figure 19. Test circuit for inductive load

switching and diode recovery times

Figure 20. Unclamped inductive load test

circuit

FAST

DIODE

L=100μH

2200

μF

D.U.T.

3.3

μF

VDD

3.3

μF

1000

μF

V^DD

R^G

D.U.T.

AM01470v1

AM01471v1

Figure 21. Unclamped inductive waveform

Figure 22. Switching time waveform

ton

toff

tdoff

V(BR)DSS

tdon

90%

10%

90%

IDM

10%

VDS

VDD

90%

V^GS

10%

AM01472v1

AM01473v1

Doc ID 18063 Rev 1

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Package mechanical data

STD9NM60N, STF9NM60N, STP9NM60N

Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK^®packages, depending on their level of environmental compliance. ECOPACK^®

specifications, grade definitions and product status are available at: www.st.com.

ECOPACK is an ST trademark.

10/16

Doc ID 18063 Rev 1

STD9NM60N, STF9NM60N, STP9NM60N

Package mechanical data

Table 9.

Dim.

TO-220FP mechanical data

Min.

Typ.

Max.

4.4

2.5

4.6

2.7

2.5

2.75

0.7

0.45

0.75

1.15

4.95

2.4

1.70

5.2

2.7

10.4

Dia

28.6

9.8

2.9

15.9

30.6

10.6

3.6

16.4

9.3

3.2

Figure 23. TO-220FP drawing

Dia

7012510_Rev_K

Doc ID 18063 Rev 1

11/16

Package mechanical data

STD9NM60N, STF9NM60N, STP9NM60N

TO-220 type A mechanical data

Typ

Dim

Min

Max

4.40

0.61

1.14

0.48

15.25

4.60

0.88

1.70

0.70

15.75

1.27

10.40

2.70

5.15

1.32

6.60

2.72

2.40

4.95

1.23

6.20

2.40

L20

L30

∅P

3.50

3.93

16.40

28.90

3.75

3.85

2.95

2.65

0015988_Rev_S

12/16

Doc ID 18063 Rev 1

STD9NM60N, STF9NM60N, STP9NM60N

Package mechanical data

TO-252 (DPAK) mechanical data

mm.

typ

DIM.

min.

2.20

0.90

0.03

0.64

5.20

0.45

0.48

6.00

max.

2.40

1.10

0.23

0.90

5.40

0.60

6.20

5.10

6.40

6.60

4.70

2.28

4.40

9.35

4.60

10.10

2.80

0.80

0.60

0 ^o

0.20

8 ^o

0068772_G

Doc ID 18063 Rev 1

13/16

Package mechanical data

STD9NM60N, STF9NM60N, STP9NM60N

Package mechanical data

DPAK FOOTPRINT

All dimensions are in millimeters

TAPE AND REEL SHIPMENT

REEL MECHANICAL DATA

MIN. MAX. MIN. MAX.

330 12.992

inch

DIM.

1.5

12.8

20.2

16.4

0.059

13.2 0.504 0.520

0.795

18.4 0.645 0.724

1.968

22.4

0.881

BASE QTY

BULK QTY

2500

TAPE MECHANICAL DATA

2500

MIN. MAX. MIN. MAX.

6.8 0.267 0.275

10.4 10.6 0.409 0.417

12.1 0.476

inch

DIM.

1.5

1.6 0.059 0.063

0.059

1.65 1.85 0.065 0.073

7.4 7.6 0.291 0.299

2.55 2.75 0.100 0.108

3.9

7.9

1.9

4.1 0.153 0.161

8.1 0.311 0.319

2.1 0.075 0.082

1.574

15.7

16.3 0.618 0.641

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Doc ID 18063 Rev 1

STD9NM60N, STF9NM60N, STP9NM60N

Revision history

Table 10. Document revision history

Date

Revision

Changes

20-Oct-2010

First release.

Doc ID 18063 Rev 1

15/16

STD9NM60N, STF9NM60N, STP9NM60N

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Doc ID 18063 Rev 1

STP9NM60N [STMICROELECTRONICS]

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