STPS1150 [STMICROELECTRONICS]

POWER SCHOTTKY RECTIFIER; 功率肖特基整流器
STPS1150
型号: STPS1150
厂家: ST    ST
描述:

POWER SCHOTTKY RECTIFIER
功率肖特基整流器

整流二极管 PC
文件: 总6页 (文件大小:74K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
STPS1150  
®
POWER SCHOTTKY RECTIFIER  
Table 1: Main Product Characteristics  
I
1 A  
F(AV)  
V
150 V  
175°C  
0.67 V  
RRM  
T (max)  
j
V (max)  
F
FEATURES AND BENEFITS  
SMA  
DO-41  
Negligible switching losses  
Low forward voltage drop for higher efficiency  
and extented battery life  
(JEDEC DO-214AC)  
STPS1150A  
STPS1150  
Low thermal resistance  
Surface mount miniature package  
Avalanche capability specified  
Table 2: Order Codes  
Part Number  
STPS1150A  
Marking  
1150  
DESCRIPTION  
STPS1150  
STPS1150RL  
STPS1150  
STPS1150  
150V Power Schottky rectifier are suited for switch  
Mode Power Supplies on up to 24V rails and high  
frequency converters.  
Packaged in SMA and Axial, this device is  
intended for use in consumer and computer  
applications like TV, STB, PC and DVD where low  
drop forward voltage in required to reduce power  
dissipation.  
Table 3: Absolute Ratings (limiting values)  
Symbol  
Parameter  
Repetitive peak reverse voltage  
Value  
150  
15  
Unit  
V
V
A
RRM  
I
RMS forward voltage  
F(RMS)  
T = 160°C δ = 0.5  
SMA  
L
I
Average forward current  
1
A
A
F(AV)  
T = 150°C δ = 0.5  
DO-41  
SMA  
DO-41  
L
50  
75  
Surge non repetitive forward  
current  
Half wave, single phase,  
50Hz  
I
FSM  
P
Repetitive peak avalanche power  
Storage temperature range  
tp = 1µs Tj = 25°C  
1500  
W
°C  
ARM  
T
-65 to + 150  
175  
stg  
T
Maximum operating junction temperature *  
°C  
j
Critical rate of rise of reverse voltage (rated V , T = 25°C)  
dV/dt  
10000  
V/µs  
R
j
dPtot  
dTj  
1
* : --------------- > ------------------------- thermal runaway condition for a diode on its own heatsink  
Rth(j a)  
August 2004  
REV. 3  
1/6  
STPS1150  
Table 4: Thermal Resistance  
Symbol  
Parameter  
Value  
20  
30  
Unit  
SMA  
DO-41  
R
Junction to lead  
°C/W  
th(j-l)  
Lead length = 10 mm  
Table 5: Static Electrical Characteristics  
Symbol  
Parameter  
Tests conditions  
Min.  
Typ  
0.2  
Max.  
Unit  
µA  
T = 25°C  
1
j
I *  
V = V  
R RRM  
Reverse leakage current  
R
T = 125°C  
mA  
0.2  
1
j
T = 25°C  
0.78  
0.62  
0.85  
0.69  
0.82  
0.67  
0.89  
0.75  
j
I = 1A  
F
T = 125°C  
j
V *  
Forward voltage drop  
V
F
T = 25°C  
j
I = 2A  
F
T = 125°C  
j
Pulse test:  
* tp = 380 µs, δ < 2%  
2
To evaluate the conduction losses use the following equation: P = 0.59 x I  
+ 0.08 I  
F(AV)  
F (RMS)  
Figure 1: Average forward power dissipation  
versus average forward current  
Figure 2: Average forward current versus  
ambient temperature (δ = 0.5)  
P
(W)  
F(AV)  
I
(A)  
F(AV)  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
δ = 0.2  
δ = 0.1  
δ = 0.5  
Rth(j-a)=Rth(j-I)  
SMA  
δ = 0.05  
DO-41  
δ = 1  
Rth(j-a)=120°C/W  
T
T
T
(°C)  
amb  
I
(A)  
F(AV)  
tp  
=tp/T  
δ
tp  
=tp/T  
δ
0
25  
50  
75  
100  
125  
150  
175  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
Figure 3: Normalized avalanche power  
derating versus pulse duration  
Figure 4: Normalized avalanche power  
derating versus junction temperature  
P
(t )  
p
(1µs)  
ARM  
P
ARM  
(t )  
p
(25°C)  
ARM  
P
ARM  
P
1
1.2  
1
0.1  
0.8  
0.6  
0.4  
0.2  
0.01  
T (°C)  
j
t (µs)  
p
0.001  
0
25  
50  
75  
100  
125  
150  
0.01  
0.1  
1
10  
100  
1000  
2/6  
STPS1150  
Figure 5: Non repetitive surge peak forward  
current versus overload duration (maximum  
values) (SMA)  
Figure 6: Non repetitive surge peak forward  
current versus overload duration (maximum  
values) (DO-41)  
I (A)  
I (A)  
M
M
8
7
6
5
4
3
2
1
8
7
6
5
4
3
2
1
SMA  
DO-41  
Ta=25°C  
Ta=75°C  
Ta=25°C  
Ta=75°C  
Ta=125°C  
Ta=125°C  
IM  
IM  
t
t
t(s)  
t(s)  
δ=0.5  
δ
=0.5  
0
0
1.E-03  
1.E-02  
1.E-01  
1.E+00  
1.E-03  
1.E-02  
1.E-01  
1.E+00  
Figure 7: Relative variation of thermal  
impedance junction to ambient versus pulse  
duration (epoxy printed circuit board,  
e(Cu)=35µm, recommended pad layout) (SMA)  
Figure 8: Relative variation of thermal  
impedance junction to ambient versus pulse  
duration (DO-41)  
Z
/R  
Z
/R  
th(j-c) th(j-c)  
th(j-c) th(j-c)  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
SMA  
DO-41  
δ = 0.5  
δ = 0.5  
δ = 0.2  
δ = 0.1  
δ = 0.2  
δ = 0.1  
T
T
Single pulse  
tp  
1.E+03  
tp  
1.E+03  
=tp/T  
=tp/T  
t (s)  
p
δ
t (s)  
p
δ
Single pulse  
1.E-02  
1.E-01  
1.E+00  
1.E+01  
1.E+02  
1.E-02  
1.E-01  
1.E+00  
1.E+01  
1.E+02  
Figure 9: Reverse leakage current versus  
reverse voltage applied (typical values)  
Figure 10: Junction capacitance versus  
reverse voltage applied (typical values)  
I (µA)  
R
C(nF)  
1.E+04  
100  
F=1MHz  
VOSC=30mVRMS  
Tj=25°C  
1.E+03  
Tj=150°C  
Tj=125°C  
1.E+02  
Tj=100°C  
1.E+01  
Tj=75°C  
10  
1.E+00  
Tj=50°C  
1.E-01  
Tj=25°C  
1.E-02  
V (V)  
R
V (V)  
R
1
1.E-03  
1
10  
100  
1000  
0
25  
50  
75  
100  
125  
150  
3/6  
STPS1150  
Figure 11: Forward voltage drop versus  
forward current (maximum values, high level)  
Figure 12: Forward voltage drop versus  
forward current (maximum values, low level)  
I (A)  
FM  
I
(A)  
FM  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
100  
10  
1
Tj=125°C  
(maximum values)  
Tj=125°C  
(maximum values)  
Tj=125°C  
(typical values)  
Tj=25°C  
Tj=125°C  
(typical values)  
(maximum values)  
Tj=25°C  
(maximum values)  
V
(V)  
FM  
V
(V)  
FM  
0.0  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2.2  
Figure 13: Thermal resistance junction to  
ambient versus copper surface under each  
lead (Epoxy printed circuit board FR4, copper  
thickness: 35µm) (SMA)  
Figure 14: Thermal resistance versus lead  
length (DO-41)  
R
(°C/W)  
th(j-a)  
R
(°C/W)  
th  
130  
120  
110  
100  
90  
120  
100  
80  
60  
40  
20  
0
Rth(j-a)  
80  
70  
60  
Rth(j-I)  
50  
40  
30  
20  
10  
L (mm)  
leads  
S(cm²)  
0
5
10  
15  
20  
25  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
4/6  
STPS1150  
Figure 15: SMA Package Mechanical Data  
DIMENSIONS  
Millimeters Inches  
Min.  
REF.  
E1  
Max.  
2.03  
0.20  
1.65  
0.41  
5.60  
4.60  
2.95  
1.60  
Min.  
0.075  
0.002  
0.049  
0.006  
0.189  
0.156  
0.089  
0.030  
Max.  
0.080  
0.008  
0.065  
0.016  
0.220  
0.181  
0.116  
0.063  
A1  
A2  
b
1.90  
0.05  
1.25  
0.15  
4.80  
3.95  
2.25  
0.75  
D
E
c
A1  
E
A2  
C
E1  
D
L
b
L
Figure 16: SMA Foot Print Dimensions  
(in millimeters)  
1.65  
1.45  
2.40  
1.45  
5/6  
STPS1150  
Figure 17: DO-41 Package Mechanical Data  
C
A
C
O/ B  
O
/
D
O
/
D
DIMENSIONS  
REF.  
Millimeters  
Inches  
Min.  
Max.  
5.20  
2.71  
Min.  
0.160  
0.080  
1.102  
0.028  
Max.  
0.205  
0.107  
A
B
C
D
4.07  
2.04  
28  
0.712  
0.863  
0.034  
Table 6: Ordering Information  
Ordering type  
STPS1150A  
STPS1150  
Marking  
1150  
STPS1150  
STPS1150  
Package  
SMA  
DO-41  
DO-41  
Weight  
0.068 g  
0.34 g  
Base qty  
5000  
2000  
Delivery mode  
Tape & reel  
Ammopack  
STPS1150RL  
0.34 g  
5000  
Tape & reel  
Band indicates cathode  
Epoxy meets UL94, V0  
Table 7: Revision History  
Date  
Revision  
Description of Changes  
Jul-2003  
2A  
Last update.  
SMA package dimensions update. Reference A1 max.  
changed from 2.70mm (0.106inc.) to 2.03mm (0.080).  
Aug-2004  
3
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics.  
All other names are the property of their respective owners  
© 2004 STMicroelectronics - All rights reserved  
STMicroelectronics group of companies  
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -  
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America  
www.st.com  
6/6  

相关型号:

STPS1150-Y

Automotive power Schottky rectifier
STMICROELECTR

STPS1150A

POWER SCHOTTKY RECTIFIER
STMICROELECTR

STPS1150AFN

暂无描述
STMICROELECTR

STPS1150AY

Automotive 150 V, 1 A Power Schottky Rectifier
STMICROELECTR

STPS1150M

1A 150 V power Schottky rectifier
STMICROELECTR

STPS1150MF

SIGNAL DIODE
STMICROELECTR

STPS1150RL

POWER SCHOTTKY RECTIFIER
STMICROELECTR

STPS1150_06

Power Schottky rectifier
STMICROELECTR

STPS1150_11

Power Schottky rectifier
STMICROELECTR

STPS1170

Power Schottky rectifier
STMICROELECTR

STPS1170AF

Power Schottky rectifier
STMICROELECTR

STPS120

POWER SCHOTTKY RECTIFIERS
ETC