STPS140A [STMICROELECTRONICS]

POWER SCHOTTKY RECTIFIER; 功率肖特基整流器
STPS140A
型号: STPS140A
厂家: ST    ST
描述:

POWER SCHOTTKY RECTIFIER
功率肖特基整流器

整流二极管
文件: 总6页 (文件大小:78K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
STPS140A/U  
®
POWER SCHOTTKY RECTIFIER  
MAIN PRODUCT CHARACTERISTICS  
IF(AV)  
VRRM  
1 A  
40 V  
0.5 V  
VF (max)  
FEATURES AND BENEFITS  
VERY SMALL CONDUCTION LOSSES  
NEGLIGIBLE SWITCHING LOSSES  
LOW FORWARD VOLTAGE DROP  
SURFACE MOUNTED DEVICE  
SMB  
STPS140U  
SMA  
STPS140A  
DESCRIPTION  
Single chip Schottky rectifier suited for Switch-  
mode Power Supplies and high frequency DC to  
DC converters.  
Packaged in SMA and SMB(*), this device is in-  
tended for surface mounting and used in low volt-  
age, high frequency inverters, free wheeling and  
polarity protection applications.  
(*) in accordance with DO214AAand DO21AC JEDEC  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Repetitive peak reverse voltage  
Value  
Unit  
V
VRRM  
40  
7
IF(RMS) RMS forward current  
A
IF(AV)  
Average forward current δ = 0.5  
SMA  
SMB  
TL = 130°C  
1
A
TL = 135°C  
IFSM  
IRRM  
Surge non repetitive forward current  
Repetitive peak reverse current  
tp = 10 ms  
Sinusoidal  
60  
1
A
A
µ
tp = 2 s  
F = 1kHz  
µ
IRSM  
Tstg  
Tj  
Non repetitive peak reverse current  
Storage temperature range  
tp = 100 s square  
1
- 65 to + 150  
150  
A
°C  
Maximum junction temperature  
Critical rate of rise of reverse voltage  
µ
V/ s  
dV/dt  
10000  
July 1998 - Ed: 6B  
1/6  
STPS140A/U  
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
30  
Unit  
°
Rth (j-l)  
Junction to lead  
SMA  
SMB  
C/W  
25  
STATIC ELECTRICAL CHARACTERISTICS  
Symbol  
Tests Conditions  
Tests Conditions  
Min. Typ. Max.  
Unit  
°
µ
A
IR *  
Reverse leakage current Tj = 25 C  
VR = 40V  
12  
Tj = 100°C  
0.25  
0.43  
0.53  
2
mA  
V
°
VF **  
Forward voltage drop  
Tj = 25 C  
IF = 1 A  
0.55  
0.5  
°
= 1 A  
Tj = 125 C  
IF  
IF = 2 A  
= 2 A  
°
Tj = 25 C  
0.65  
0.6  
°
Tj = 125 C  
IF  
Pulse test : * tp = 5 ms, δ < 2 %  
** tp = 380 µs, δ < 2%  
To evaluate the maximum conduction losses use the following equation :  
2
P = 0.4 x IF(AV) + 0.10 x IF (RMS)  
Fig. 1:  
average forward current.  
Fig. 2:  
Average forward current versus ambient  
Average forward power dissipation versus  
δ
temperature ( =0.5).  
IF(av)(A)  
PF(av)(W)  
1.2  
0.7  
δ = 0.1  
δ = 0.2  
δ = 0.5  
Rth(j-a)=Rth(j-l)  
0.6  
1.0  
0.8  
0.6  
δ = 0.05  
SMA  
Rth(j-a)=100°C/W  
S(Cu)=1.5cm²  
0.5  
0.4  
0.3  
0.2  
0.1  
δ = 1  
SMB  
Rth(j-a)=80°C/W  
S(Cu)=1.5cm²  
0.4  
T
T
0.2  
tp  
=tp/T  
δ
IF(av) (A)  
tp  
Tamb(°C)  
75  
=tp/T  
δ
0.0  
0.0  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0
25  
50  
100  
125  
150  
2/6  
STPS140A/U  
Fig. 3-1:  
Fig. 3-2:  
Non repetivesurge peak forward current  
versus overload duration (maximum values) (SMA).  
Non repetivesurge peak forward current  
versus overload duration (maximum values) (SMB).  
IM(A)  
IM(A)  
8
7
6
8
7
6
Ta=25°C  
Ta=25°C  
5
5
4
4
Ta=50°C  
Ta=50°C  
3
3
Ta=100°C  
Ta=100°C  
2
2
IM  
IM  
t
t
1
1
0
δ
=0.5  
t(s)  
t(s)  
δ
=0.5  
0
1E-3  
1E-2  
1E-1  
1E+0  
1E-3  
1E-2  
1E-1  
1E+0  
Fig. 4-1:  
Fig. 4-2:  
Relative variation of thermal impedance  
junction to ambient versus pulse duration (SMA).  
Relative variation of thermal impedance  
junction to ambient versus pulse duration (SMB).  
Zth(j-a)/Rth(j-a)  
Zth(j-a)/Rth(j-a)  
1.0  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
Printed circuit board: SCu=1.5cm2 (e=35µm)  
Printed circuit board: SCu=1.5cm2 (e=35µm)  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
δ = 0.5  
δ = 0.5  
T
T
0.3  
δ = 0.2  
δ = 0.2  
δ = 0.1  
0.2  
0.1  
0.0  
δ = 0.1  
tp  
=tp/T  
tp(s)  
δ
tp(s)  
tp  
=tp/T  
Single pulse  
δ
Single pulse  
1E+0  
1E+3  
1E-2  
1E-1  
1E+1  
1E+2  
1E-2  
1E-1  
1E+0  
1E+1  
1E+2  
Fig. 5:  
Fig. 6:  
Reverse leakage current versus reverse  
Junction capacitance versus reverse  
voltage applied (typical values).  
voltage applied (typical values)  
IR(µA)  
C(pF)  
1E+3  
200  
Tj=125°C  
F=1MHz  
Tj=25°C  
1E+2  
100  
50  
Tj=75°C  
1E+1  
1E+0  
Tj=25°C  
20  
1E-1  
VR(V)  
VR(V)  
10  
1E-2  
1
2
5
10  
20  
50  
0
5
10  
15  
20  
25  
30  
35  
40  
3/6  
STPS140A/U  
Fig. 7:  
current (maximum values).  
Fig. 8-1:  
Thermal resistance junction to ambient  
Forward voltage drop versus forward  
versus copper surface under each lead (Epoxy  
µ
printed circuit board, copper thickness: 35 m)(SMB).  
IFM(A)  
Rth(j-a) (°C/W)  
1E+1  
120  
Tj=125°C  
P=1.5W  
100  
1E+0  
1E-1  
80  
60  
40  
20  
S(Cu) (cm²)  
VFM(V)  
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0  
1E-2  
0
0
1
2
3
4
5
Fig. 8-2:  
Thermal resistance junction to ambient  
versus copper surface under each lead (Epoxy  
printed circuit board, copper thickness: 35 m)(SMA).  
µ
Rth(j-a) (°C/W)  
140  
P=1.5W  
120  
100  
80  
60  
40  
20  
S(Cu) (cm²)  
0
0
1
2
3
4
5
4/6  
STPS140A/U  
PACKAGE MECHANICAL DATA  
SMA  
DIMENSIONS  
Millimeters Inches  
REF.  
E1  
Min.  
Max.  
Min.  
Max.  
A1  
A2  
b
1.90  
0.05  
1.25  
0.15  
4.80  
3.95  
2.25  
0.75  
2.70  
0.20  
1.65  
0.41  
5.60  
4.60  
2.95  
1.60  
0.075  
0.002  
0.049  
0.006  
0.189  
0.156  
0.089  
0.030  
0.106  
0.008  
0.065  
0.016  
0.220  
0.181  
0.116  
0.063  
D
c
E
E
A1  
E1  
D
A2  
C
L
b
L
FOOT PRINT  
(in millimeters)  
Marking:  
S140  
1.65  
1.45  
2.40  
1.45  
5/6  
STPS140A/U  
PACKAGE MECHANICAL DATA  
SMB Plastic  
DIMENSIONS  
Millimeters Inches  
REF.  
E1  
Min.  
Max.  
Min.  
Max.  
A1  
A2  
b
1.90  
0.05  
1.95  
0.15  
5.10  
4.05  
3.30  
0.75  
2.45  
0.20  
2.20  
0.41  
5.60  
4.60  
3.95  
1.60  
0.075  
0.002  
0.077  
0.006  
0.201  
0.159  
0.130  
0.030  
0.096  
0.008  
0.087  
0.016  
0.220  
0.181  
0.156  
0.063  
D
c
E
E
A1  
E1  
D
A2  
C
L
b
L
Marking:  
G14  
FOOT PRINT  
(in millimeters)  
2.3  
1.52  
2.75  
1.52  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of  
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by  
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to  
change without notice. This publication supersedes and replaces all information previously supplied.  
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-  
proval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics  
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia  
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.  
6/6  

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