STPS5L40 [STMICROELECTRONICS]

POWER SCHOTTKY RECTIFIER; 功率肖特基整流器
STPS5L40
型号: STPS5L40
厂家: ST    ST
描述:

POWER SCHOTTKY RECTIFIER
功率肖特基整流器

二极管
文件: 总5页 (文件大小:50K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
®
STPS5L40  
POWER SCHOTTKY RECTIFIER  
MAIN PRODUCT CHARACTERISTICS  
IF(AV)  
VRRM  
5 A  
40 V  
Tj (max)  
VF (max)  
150°C  
0.44 V  
FEATURES AND BENEFITS  
NEGLIGIBLE SWITCHING LOSSES  
LOW FORWARD VOLTAGE DROP FOR  
HIGHER EFFICIENCY.  
LOW THERMAL RESISTANCE  
AVALANCHE CAPABILITY SPECIFIED  
DESCRIPTION  
DO-201AD  
STPS5L40  
Axial Power Schottky rectifier suited for Switch  
Mode Power Supplies and high frequency  
inverters.  
Packaged in DO-201AD, this device is intended for  
use in low voltage output for small battery chargers  
&
consumer SMPS such as DVD and  
Set-Top-Box..  
ABSOLUTE RATINGS (limiting values)  
Symbol  
VRRM  
IF(RMS)  
IF(AV)  
Parameter  
Value  
40  
Unit  
V
Repetitive peak reverse voltage  
RMS forward current  
15  
A
5
A
Average forward current  
Tl = 100°C δ = 0.5  
IFSM  
150  
A
Surge non repetitive forward current  
Half wave, single phase  
tp = 10 ms  
PARM  
Tstg  
2700  
- 65 to + 150  
150  
W
°C  
Repetitive peak avalanche power  
Storage temperature range  
tp = 1µs Tj = 25°C  
Tj  
°C  
Maximum operating junction temperature *  
dV/dt  
10000  
V/µs  
Critical rate of rise of reverse voltage (rated VR, Tj = 25°C)  
dPtot  
1
* :  
<
thermal runaway condition for a diode on its own heatsink  
dTj  
Rth(j a)  
July 2003 - Ed: 2A  
1/5  
STPS5L40  
THERMAL PARAMETERS  
Symbol  
Parameter  
Value  
75  
Unit  
°C/W  
°C/W  
Rth(j-a)  
Rth(j-l)  
Junction to ambient  
Junction to leads  
15  
Lead length = 10 mm  
STATIC ELECTRICAL CHARACTERISTICS  
Symbol  
Parameter  
Tests conditions  
Tj = 25°C VR = VRRM  
Min. Typ. Max.  
Unit  
IR *  
0.2  
mA  
Reverse leakage current  
8
25  
Tj = 100°C  
Tj = 125°C  
Tj = 25°C  
25  
75  
VF *  
0.44  
0.40  
0.38  
0.50  
0.46  
0.44  
V
Forward voltage drop  
IF = 5 A  
Tj = 100°C  
Tj = 125°C  
Pulse test : * tp = 380 µs, δ < 2%  
To evaluate the maximum conduction losses use the following equation:  
2
P = 0.34 x IF(AV) + 0.028 x IF (RMS)  
Fig. 1: Conduction losses versus average current.  
Fig. 2: Average forward current versus ambient  
temperature (δ = 0.5).  
PF(av)(W)  
3.5  
IF(av)(A)  
6
δ = 0.1  
δ = 0.2  
δ = 0.5  
δ = 0.05  
Rth(j-a)=Rth(j-l)  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
5
4
δ = 1  
Rth(j-a)=75°C/W  
3
2
T
T
1
Tamb(°C)  
IF(av)(A)  
3.0 3.5  
tp  
tp  
=tp/T  
=tp/T  
δ
δ
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
4.0  
4.5  
5.0  
5.5  
6.0  
0
25  
50  
75  
100  
125  
150  
2/5  
STPS5L40  
Fig. 3: Normalized avalanche power derating  
versus pulse duration.  
Fig. 4: Normalized avalanche power derating  
versus junction temperature.  
P
(t )  
p
(1µs)  
ARM  
P
ARM  
(t )  
p
(25°C)  
ARM  
P
ARM  
P
1
1.2  
1
0.1  
0.8  
0.6  
0.4  
0.2  
0
0.01  
T (°C)  
j
t (µs)  
p
0.001  
0
25  
50  
75  
100  
125  
150  
0.01  
0.1  
1
10  
100  
1000  
Fig. 5: Non repetitive surge peak forward current  
versus overload duration (maximum values).  
Fig. 6: Relative variation of thermal impedance  
junction to ambient versus pulse duration.  
IM(A)  
18  
Zth(j-a)/Rth(j-a)  
1.0  
0.9  
0.8  
0.7  
16  
14  
12  
Ta=25°C  
0.6  
10  
δ = 0.5  
0.5  
8
Ta=50°C  
0.4  
0.3  
6
δ = 0.2  
T
4
Ta=100°C  
0.2  
IM  
δ = 0.1  
2
t
0.1  
t(s)  
Single pulse  
tp(s)  
tp  
1.E+03  
=tp/T  
δ=0.5  
δ
0
0.0  
1.E-01  
1.E-03  
1.E-02  
1.E-01  
1.E+00  
1.E+00  
1.E+01  
1.E+02  
Fig. 7: Reverse leakage current versus reverse  
voltage applied (typical values).  
Fig. 8: Junction capacitance versus reverse  
voltage applied (typical values).  
IR(mA)  
C(pF)  
1000  
1.E+02  
Tj=150°C  
F=1MHz  
Vosc=30mV  
Tj=25°C  
Tj=125°C  
1.E+01  
Tj=100°C  
Tj=75°C  
1.E+00  
Tj=50°C  
100  
1.E-01  
Tj=25°C  
1.E-02  
VR(V)  
10  
VR(V)  
20  
1.E-03  
10  
0
5
10  
15  
25  
30  
35  
40  
1
100  
3/5  
STPS5L40  
Fig. 9-1: Forward voltage drop versus forward  
current (low level).  
Fig. 9-2: Forward voltage drop versus forward  
current (high level).  
IFM(A)  
2.0  
IFM(A)  
100  
1.8  
Tj=125°C  
(Maximum values)  
1.6  
Tj=125°C  
(Maximum values)  
1.4  
1.2  
Tj=125°C  
(Typical values)  
Tj=125°C  
(Typical values)  
1.0  
10  
Tj=25°C  
Tj=25°C  
(Maximum values)  
(Maximum values)  
0.8  
0.6  
0.4  
0.2  
VFM(V)  
VFM(V)  
0.8  
0.0  
1
0.0  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.0  
0.3  
0.5  
1.0  
1.3  
1.5  
Fig. 10: Thermal resistance junction to ambient  
versus copper surface under each lead (epoxy  
printed board FR4, Cu = 35µm).  
Fig. 11: Thermal resistances versus leads length.  
Rth(j-a)(°C/W)  
80  
Rth(°C/W)  
80  
70  
60  
50  
40  
30  
20  
70  
60  
50  
40  
30  
20  
10  
0
Rth(j-a): Epoxy printed circuit board FR4 (Cu= 35µm)  
Rth(j-l)  
10  
S(cm²)  
Lleads(cm)  
0
0
1
2
3
4
5
6
7
8
9
10  
5
10  
15  
20  
25  
4/5  
STPS5L40  
PACKAGE MECHANICAL DATA  
DO-201AD plastic  
B
A
B
ØC  
note 1  
note 1  
E
E
ØD  
ØD  
note 2  
DIMENSIONS  
REF.  
Millimeters  
Inches  
NOTES  
Min. Max. Min. Max.  
A
B
C
D
E
9.50  
0.374  
1 - The lead diameter D is not controlled over zone E  
25.40  
1.000  
5.30  
1.30  
1.25  
0.209  
0.051  
0.049  
2 - The minimum axial length within which the device  
may be placed with its leads bent at right angles is  
0.59"(15 mm)  
Ordering type  
Marking  
Package  
Weight  
Base qty  
Delivery mode  
STPS5L40  
STPS5L40  
STPS5L40  
DO-201AD  
DO-201AD  
1.12g  
1.12g  
600  
Ammopack  
STPS5L40RL  
1900  
Tape and reel  
WHITE BAND INDICATES CATHODE  
EPOXY MEETS UL94,V0  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of  
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by  
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to  
change without notice. This publication supersedes and replaces all information previously supplied.  
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written  
approval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics  
© 2003 STMicroelectronics - Printed in Italy - All rights reserved.  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - Finland - France - Germany  
Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore  
Spain - Sweden - Switzerland - United Kingdom - United States.  
http://www.st.com  
5/5  

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