STPS6045 [STMICROELECTRONICS]
POWER SCHOTTKY RECTIFIER; 功率肖特基整流器
| 型号： | STPS6045 |
| 厂家： | 
ST |
| 描述： | POWER SCHOTTKY RECTIFIER |
| 文件： | 总5页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STPS6045CP/CPI/CW
POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
A1
K
IF(AV)
VRRM
2x30 A
45 V
A2
A2
K
A1
Tj (max)
VF (max)
175 °C
0.63 V
Insulated
TOP-3I
FEATURES AND BENEFITS
STPS6045CPI
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLESWITCHING LOSSES
EXTREME FAST SWITCHING
LOW THERMAL RESISTANCE
INSULATEDPACKAGE: TOP-3I
Insulatingvoltage = 2500VRMS
Capacitance= 12pF
A2
A2
K
K
A1
DESCRIPTION
A1
Dual center tap Schottky rectifier suited for
switchmode power supply and high frequency DC
to DC converters.
TO-247
SOT-93
STPS6045CW
STPS6045CP
Packaged either in SOT-93, TOP-3I or TO-247,
this device is intended for use in low voltage, high
frequency inverters, free wheeling and polarity
protectionapplications.
ABSOLUTE RATINGS
(limiting values, per diode)
Symbol
Parameter
Value
Unit
VRRM
IF(RMS)
IF(AV)
45
V
A
A
Repetitive peak reverse voltage
60
30
RMS forward current
SOT-93
TO-247
Average forward current
δ = 0.5
Tc = 150°C Per diode
TOP-3I
60
400
1
Tc = 130°C Per device
IFSM
IRRM
A
A
Surgenon repetitive forward current
Repetitive Peak reverse current
tp = 10 ms sinusoidal
tp = 2 µs square
F = 1kHz
IRSM
Tstg
Tj
3
A
Non repetitivepeak reverse current
Storage temperature range
tp = 100 µs square
- 65 to + 175 °C
175
°C
Maximum operatingjunction temperature*
Critical rate of rise of reverse voltage
dV/dt
10000
V/µs
dPtot
dTj
1
* :
<
thermal runawayconditionfor a diode on its own heatsink
Rth(j−a)
June 1999 - Ed:5B
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STPS6045CP/CPI/CW
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth (j-c)
SOT-93 / TO-247
0.95
0.55
°C/W
Junction to case
Per diode
Total
TOP-3I
1.8
1.1
Per diode
Total
Rth (c)
SOT-93 / TO-247
TOP-3I
0.15
0.4
Coupling
When the diodes 1 and 2 are used simultaneously:
∆ TJ(diode1) = P(diode1)x Rth(j-c) (Per diode) + P(diode2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Tests Conditions
Min. Typ. Max.
Unit
IR *
500
µA
Reverse leakage
current
Tj = 25°C
Tj = 125°C
VR = VRRM
20
80
mA
V
VF *
0.53 0.63
0.84
Forward voltage drop Tj = 125°C
Tj = 25°C
IF = 30 A
IF = 60 A
IF = 60 A
0.68 0.78
Tj = 125°C
Pulse test : ** tp = 380 µs, δ < 2%
To evaluate the conductionlosses use the following equation:
2
P = 0.48 x IF(AV) + 0.005 IF (RMS)
Fig. 2: Average current versus ambient
temperature (δ=0.5, per diode).
Fig. 1:
Average forward power dissipation
versus average forward current (per diode).
IF(av)(A)
PF(av)(W)
35
25
δ = 0.1 δ = 0.2
δ = 0.5
SOT-93
TO-247
δ = 0.05
Rth(j-a)=Rth(j-c)
30
25
20
15
10
5
20
TOP-3I
δ = 1
15
Rth(j-a)=10°C/W
10
T
T
5
tp
=tp/T
δ
Tamb(°C)
tp
=tp/T
δ
IF(av) (A)
0
0
0
25
50
75
100
125
150
175
0
5
10
15
20
25
30
35
40
2/5
STPS6045CP/CPI/CW
Fig. 3-1: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (SOT-93 and TO-247).
Fig. 3-2: Nonrepetitive surgepeakforward current
versus overload duration (maximum values, per
diode) (TOP-3I).
IM(A)
IM(A)
350
250
300
250
200
150
200
Tc=75°C
Tc=75°C
Tc=100°C
150
Tc=100°C
100
Tc=125°C
100
IM
IM
Tc=125°C
50
t
t
50
δ=0.5
t(s)
δ=0.5
t(s)
0
0
1E-3
1E-2
1E-1
1E+0
1E-3
1E-2
1E-1
1E+0
Fig. 4: Relative variation of thermal transient
impedance junction to case versus pulse duration.
Fig. 5:
Reverse leakage current versus reverse
voltage applied (typical values, per diode).
IR(µA)
Zth(j-c)/Rth(j-c)
1E+5
Tj=150°C
1.0
Tj=125°C
1E+4
0.8
Tj=100°C
1E+3
Tj=75°C
δ = 0.5
0.6
Tj=50°C
1E+2
0.4
T
δ = 0.2
δ = 0.1
Tj=25°C
1E+1
0.2
Single pulse
=tp/T
δ
tp
tp(s)
1E+0
0.0
0
5
10 15 20 25
30 35 40 45
1E-4
1E-3
1E-2
1E-1
1E+0
VR(V)
Fig. 7: Forward voltage drop versus forward
current (maximum values, per diode).
Fig. 6:
Junction capacitance versus reverse
voltage applied (typical values, per diode).
IFM(A)
C(nF)
5.0
200
F=1MHz
Tj=25°C
100
Typicalvalues
Tj=125°C
Tj=25°C
1.0
10
Tj=125°C
VFM(V)
VR(V)
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
3/5
1
2
5
10
20
50
STPS6045CP/CPI/CW
PACKAGE MECHANICAL DATA
SOT-93
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
REF.
A
C
D
D1
E
F
4.70
1.90
4.90 1.185
2.10 0.075
0.193
0.083
2.50
2.00
0.098
0.078
0.50
1.10
0.78 0.020
1.30 0.043
0.031
0.051
F3
F4
G
H
L
L2
L3
L5
L6
O
1.75
2.10
0.069
0.083
10.80
14.70
11.10 0.425
15.20 0.279
12.20
0.437
0.598
0.480
0.638
16.20
18.0
0.709
1.220
3.95
4.00
4.15 0.156
4.10 0.157
0.163
0.161
31.00
PACKAGE MECHANICAL DATA
TOP-3I (isolated)
DIMENSIONS
REF.
Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
A
B
C
D
E
F
G
H
J
K
L
P
R
4.4
1.45
14.35
0.5
4.6 0.173
1.55 0.057
15.60 0.565
0.7 0.020
2.9 0.106
16.5 0.622
21.1 0.815
15.5 0.594
5.65 0.213
3.65 0.134
4.17 0.161
1.40 0.047
0.181
0.061
0.614
0.028
0.114
0.650
0.831
0.610
0.222
0.144
0.164
0.055
2.7
15.8
20.4
15.1
5.4
3.4
4.08
1.20
4.60
0.181
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STPS6045CP/CPI/CW
PACKAGE MECHANICAL DATA
TO-247
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
V
REF.
Dia.
V
A
D
E
F
F1
F2
4.85
2.20
0.40
1.00
5.15 0.191
2.60 0.086
0.80 0.015
1.40 0.039
0.203
0.102
0.031
0.055
A
H
3.00
2.00
0.118
0.078
F3 2.00
F4 3.00
G
2.40 0.078
3.40 0.118
0.094
0.133
L5
10.90
0.429
H
L
15.45
19.85
15.75 0.608
20.15 0.781
4.30 0.145
0.620
0.793
0.169
L
L1 3.70
L2
L3 14.20
L4
L5
L2 L4
L1
18.50
0.728
14.80 0.559
3.00 0.078
3.65 0.139
0.582
0.118
0.143
F2
F3
F1
34.60
5.50
1.362
0.216
D
V2
L3
M
2.00
F4
V
V2
Dia. 3.55
5°
60°
5°
60°
F(x3)
M
E
G
=
=
Type
Marking
Package
Weight
Base qty
Delivery mode
STPS6045CP STPS6045CP
SOT-93
TOP-3I
TO-247
3.97 g.
4.46 g.
4.36 g.
30
30
30
Tube
Tube
Tube
STPS6045CPI STPS6045CPI
STPS6045CW STPS6045CW
Cooling method: by conduction(C)
Recommended torque value: 0.8 N.m.
Maximum torque value: 1.0 N.m.
Epoxymeets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor forany infringementof patents or otherrights of thirdparties which may result fromits use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
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1999 STMicroelectronics - Printed inItaly - All rights reserved.
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