STPS80L15TV [STMICROELECTRONICS]
LOW DROP OR-ing POWER SCHOTTKY DIODE; 低压降的OR-ing功率肖特基二极管
| 型号： | STPS80L15TV |
| 厂家： | 
ST |
| 描述： | LOW DROP OR-ing POWER SCHOTTKY DIODE |
| 文件： | 总4页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STPS80L15TV
LOW DROP OR-ing POWER SCHOTTKY DIODE
MAIN PRODUCT CHARACTERISTICS
K2
K1
A2
IF(AV)
VRRM
2 x 40 A
15 V
Tj (max)
VF (max)
125 °C
0.33 V
A1
K2
FEATURES AND BENEFITS
VERY LOW DROP FORWARD VOLTAGEFOR
LESS POWER DISSIPATION AND REDUCED
HEATSINK
A2
INSULATEDPACKAGE:
Insulatedvoltage = 2500V(RMS)
Capacitance= 45 pF
K1
A1
DESCRIPTION
Dual Schottky rectifier suited for Switched Mode
Power Suppliesand DC to DC power converters.
ISOTOPTM
Packaged in ISOTOPTM, this device is especially
intended for use as an OR-ing diode in fault
tolerant power supply equipments.
ABSOLUTE RATINGS
Symbol
(limiting values, per diode)
Parameter
Value
Unit
V
VRRM
Repetitive peak reverse voltage
15
100
40
IF(RMS) RMS forward current
A
IF(AV)
IFSM
IRRM
Average forward current
Tc = 110°C
δ = 1
A
Surge non repetitiveforward current
Repetitive peak reverse current
tp = 10 ms
Sinusoidal
700
2
A
A
tp = 2 µs
F = 1kHz
Tstg
Tj
Storagetemperature range
- 65 to + 150
125
°C
°C
Maximum operating junction temperature
Critical rate of rise of reverse voltage
dV/dt
10000
V/µs
dPtot
dTj
1
* :
<
thermal runawayconditionfor a diode on its own heatsink
Rth(j−a)
ISOTOP is a trademark of STMicroelectronics
July 1999 - Ed: 4A
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STPS80L15TV
THERMAL RESISTANCES
Symbol
Parameter
Value
1
Unit
Rth (j-c) Junction to case
Per diode
Total
°C/W
0.55
0.1
Rth (c)
Coupling
STATIC ELECTRICAL CHARACTERISTICS
(per diode)
Symbol
Parameter
Tests conditions
Min. Typ. Max.
Unit
°
IR *
Reverse leakage current
Tj = 100 C
VR = 5V
280
11
mA
Tj = 25°C
Tj = 100°C
Tj = 25°C
VR = 12V
0.44
1.1
A
V
VF *
Forward voltage drop
IF = 40 A
IF = 40 A
0.43
0.33
°
Tj = 125 C
0.28
Pulse test : * tp = 380 s, < 2 %
µ
δ
To evaluate the conduction losses use the following equation :
2
P = 0.19 x IF(AV) + 3.25 10-3 x IF
(RMS)
Fig. 1: Average forward power dissipation versus
averageforward current (per diode).
Fig. 2: Average forward current versus ambient
temperature ( =1, per diode).
δ
PF(av)(W)
IF(av)(A)
14
45
δ
=
0.1
δ = 0.2
δ
= 0.5
Rth(j-a)=Rth(j-c)
δ
= 0.05
40
35
30
25
12
10
8
δ
= 1
Rth(j-a)=5°C/W
20
15
10
5
6
T
T
4
2
tp
=tp/T
δ
Tamb(°C)
tp
=tp/T
IF(av) (A)
20 25
δ
0
0
0
25
50
75
100
125
0
5
10
15
30
35
40
45
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STPS80L15TV
Fig. 3:
Fig. 4:
Relative variation of thermal impedance
junction to case versus pulse(perdiode).
Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
Zth(j-c)/Rth(j-c)
IM(A)
1.0
500
450
400
350
300
0.8
δ = 0.5
0.6
250
Tc=50°C
200
150
100
50
0.4
δ = 0.2
Tc=75°C
IM
0.2
t
Tc=110°C
δ = 0.1
t(s)
δ=0.5
Single pulse
tp(s)
0
1E-3
1E-2
1E-1
1E+0
0.0
1E-4
1E-3
1E-2
1E-1
1E+0
Fig. 5: Reverse leakage current versus reverse
voltage applied (typicalvalues, per diode).
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values, per diode).
C(nF)
IR(mA)
10
F=1MHz
Tj=25°C
1E+3
Tj=100°C
Tj=75°C
1E+2
5
2
1E+1
Tj=25°C
1E+0
VR(V)
VR(V)
1E-1
1
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
1
2
5
10
20
Fig. 7:
current (per diode).
Forward voltage drop versus forward
IFM(A)
200.0
100.0
Tj=100°C
(typical values)
Tj=100°C
(Maximum values)
Tj=25°C
(Maximum values)
10.0
VFM(V)
1.0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
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STPS80L15TV
PACKAGE MECHANICAL DATA
ISOTOP
DIMENSIONS
Millimeters Inches
Min.
REF.
Min.
Max.
12.20
9.10
Max.
0.480
0.358
0.323
0.033
0.081
1.504
1.248
1.004
0.951
A
A1
B
11.80
8.90
0.465
0.350
0.307
0.030
0.077
1.488
1.240
0.990
0.939
7.8
8.20
C
0.75
0.85
C2
D
1.95
2.05
37.80
31.50
25.15
23.85
38.20
31.70
25.50
24.15
D1
E
E1
E2
G
24.80 typ.
0.976 typ.
14.90
12.60
3.50
15.10
12.80
4.30
0.587
0.496
0.138
0.161
0.181
0.157
0.157
1.185
0.594
0.504
0.169
0.169
0.197
0.69
G1
G2
F
4.10
4.30
F1
P
4.60
5.00
4.00
4.30
P1
S
4.00
4.40
0.173
1.193
30.10
30.30
Ordering type
Marking
Package
Weight
Base qty
Deliverymode
STPS80L15TV STPS80L15TV
ISOTOP
28g
10
Tube
(without screws)
Cooling method: by conduction(C)
Recommended torque value: 1.3 N.m.
Maximum torque value: 1.5 N.m.
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor forany infringementof patents or otherrights of thirdparties which may result fromits use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registeredtrademark of STMicroelectronics
1999 STMicroelectronics - Printed in Italy - All rights reserved.
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