STPSC4H065 [STMICROELECTRONICS]
650 V power Schottky silicon carbide diode;
| 型号： | STPSC4H065 |
| 厂家： | 
ST |
| 描述： | 650 V power Schottky silicon carbide diode |
| 文件： | 总10页 (文件大小：178K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STPSC4H065
650 V power Schottky silicon carbide diode
Datasheet - production data
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide band gap material
allows the design of a Schottky diode structure
with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
A
K
K
A
K
TO-220AC
STPSC4H065D
Especially suited for use in PFC applications, this
ST SiC diode will boost the performance in hard
switching conditions. Its high forward surge
capability ensures a good robustness during
transient phases.
K
A
NC
DPAK
Table 1. Device summary
Symbol
Value
STPSC4H065B-TR
IF(AV)
VRRM
4 A
650 V
175 °C
Tj (max)
Features
No or negligible reverse recovery
Switching behavior independent of
temperature
High forward surge capability
November 2013
DocID023598 Rev 3
1/10
This is information on a product in full production.
www.st.com
Characteristics
STPSC4H065
1
Characteristics
Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
IF(RMS) Forward rms current
650
22
4
V
A
A
IF(AV)
Average forward current
Tc = 145 °C(1), DC
tp = 10 ms sinusoidal, Tc = 25 °C
tp = 10 ms sinusoidal, Tc = 125 °C
tp = 10 µs square, Tc = 25 °C
38
35
Surge non repetitive forward
current
A
IFSM
200
Tc = 145 °C(1), Tj = 175 °C, = 0.1
A
IFRM
Repetitive peak forward current
11
Tstg
Tj
Storage temperature range
Operating junction temperature(2)
-55 to +175 °C
-40 to +175 °C
1. Value based on Rth(j-c) max.
dPtot
dTj
1
---------------
-------------------------
2.
Rthj – a condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance
Value
Symbol
Parameter
Unit
Typ.
Max.
2.7
Rth(j-c) Junction to case
1.8
°C/W
Table 4. Static electrical characteristics
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
Tj = 25 °C
-
-
-
-
3
40
170
1.75
2.5
(1)
IR
Reverse leakage current
VR = VRRM
µA
V
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
35
1.56
1.98
(2)
VF
Forward voltage drop
IF = 4 A
1. tp = 10 ms, < 2%
2. tp = 500 µs, < 2%
To evaluate the conduction losses use the following equation:
2
P = 1.35 x IF(AV) + 0.288 x IF (RMS)
Table 5. Dynamic electrical characteristics
Parameter Test conditions
Total capacitive charge VR = 400 V
Symbol
Min.
Typ.
Unit
(1)
Qcj
12.5
200
21
nC
VR = 0 V, Tc = 25 °C, F = 1 MHz
Cj
Total capacitance
pF
VR = 400 V, Tc = 25 °C, F = 1 MHz
V
OUT
1. Most accurate value for the capacitive charge:
Qcj
=
c (v ).dv
j R R
∫
0
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STPSC4H065
Characteristics
Figure 1. Forward voltage drop versus forward Figure 2. Forward voltage drop versus forward
current (typical values, low level) current (typical values, high level)
IFM(A)
IFM(A)
8
7
6
5
4
3
2
1
0
40
36
32
28
24
20
16
12
8
Pulse test : tp=500µs
Pulse test : tp=500µs
T =25 °C
a
T =150 °C
a
T =100 °C
a
T =25 °C
a
T =175 °C
a
T =100 °C
a
T =150 °C
a
4
VFM(V)
VFM(V)
T =175 °C
a
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
1
2
3
4
5
6
7
8
Figure 3. Reverse leakage current versus
reverse voltage applied
Figure 4. Peak forward current versus case
temperature
(typical values)
I
(A)
M
IR(µA)
50
40
30
20
10
0
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
δ = 0.1
T
Tj=175 °C
tp
=tp/T
δ
Tj=150 °C
δ = 0.3
δ = 0.5
Tj=25 °C
δ = 1
δ = 0.7
VR(V)
T
(°C)
C
0
50 100 150 200 250 300 350 400 450 500 550 600 650
0
25
50
75
100
125
150
175
Figure 5. Junction capacitance versus reverse
voltage applied (typical values)
Figure 6. Relative variation of thermal
impedance junction to case versus pulse
duration
C
(pF)
Zth(j-c)/Rth(j-c)
j
250
200
150
100
50
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
F=1 MHz
VOSC=30 mVRMS
Tj=25 °C
Single pulse
VR(V)
10.0
tp(s)
0
0.1
1.0
100.0
1000.0
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
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10
Characteristics
STPSC4H065
Figure 7. Non-repetitive peak surge forward
current versus pulse duration (sinusoidal
waveform)
Figure 8. Total capacitive charges versus
reverse voltage applied (typical values)
Q
(nC)
cj
IFSM(A)
14
12
10
8
1.E+03
T =25 °C
a
1.E+02
T =125 °C
a
6
4
2
tp(s)
VR (V)
350
1.E+01
0
1.E-05
1.E-04
1.E-03
1.E-02
0
50
100
150
200
250
300
400
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STPSC4H065
Package information
2
Package information
Epoxy meets UL94, V0
Recommended torque value (TO-220AC): 0.4 to 0.6 N·m
Cooling method: conduction (C)
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
®
ECOPACK is an ST trademark.
Figure 9. TO-220AC dimension definitions
A
H2
Ø I
C
L5
L7
L6
L4
L2
D
F1
L9
F
M
E
G
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10
Package information
STPSC4H065
Table 6. TO-220AC dimension values
Dimensions
Ref.
Millimeters
Inches
Min.
Max.
Min.
Max.
A
C
4.40
1.23
2.40
0.49
0.61
1.14
4.95
10.00
4.60
1.32
2.72
0.70
0.88
1.70
5.15
10.40
0.173
0.048
0.094
0.019
0.024
0.044
0.194
0.393
0.181
0.051
0.107
0.027
0.034
0.066
0.202
0.409
D
E
F
F1
G
H2
L2
L4
L5
L6
L7
L9
M
16.40 typ.
0.645 typ.
13.00
2.65
14.00
2.95
0.511
0.104
0.600
0.244
0.137
0.551
0.116
0.620
0.259
0.154
15.25
6.20
15.75
6.60
3.50
3.93
2.6 typ.
0.102 typ.
Diam. I
3.75
3.85
0.147
0.151
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STPSC4H065
Package information
Figure 10. DPAK dimension definitions
E
A
b4
c2
E1
L2
D1
D
R
H
L4
A1
R
b
e
e1
c
A2
L
L1
V2
Gauge
plane
0.25
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10
Package information
STPSC4H065
Table 7. DPAK dimension values
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
Max.
Min.
Max.
A
A1
A2
b
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
0.086
0.035
0.001
0.025
0.204
0.017
0.018
0.236
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
b4
c
c2
D
D1
E
5.10
0.201
6.40
6.60
0.251
0.259
E1
e
4.70
2.28
0.185
0.090
e1
H
4.40
9.35
1.00
4.60
10.10
1.50
0.173
0.368
0.039
0.181
0.397
0.059
L
L1
L2
L4
R
2.80
0.80
0.11
0.032
0.60
0°
1.00
8°
0.023
0°
0.039
8°
0.2
0.008
V2
Figure 11. Footprint (dimensions in mm)
10.7
6.1
2.8
A
4.572
6.3
B
1.5
This footprint ensures insultation up to 630 V rms (according to IEC 664-1)
The device must be positioned within
0.05 A B
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STPSC4H065
Ordering information
3
Ordering information
Table 8. Ordering information
Order code
Marking
Package
Weight
Base qty Delivery mode
STPSC4H065D
STPSC4H065D
STPSC 4H065
TO-220AC
DPAK
1.86 g
0.32 g
50
Tube
STPSC4H065B-TR
2500
Tape and reel
4
Revision history
Table 9. Document revision history
Changes
Date
Revision
31-Aug-2012
10-Oct-2012
07-Nov-2013
1
2
3
First issue.
Added Max. value in Table 3.
Updated Figure 1, Figure 2, Figure 10, Figure 11 and Table 7.
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STPSC4H065
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