STS01DTP06_06 [STMICROELECTRONICS]
Dual NPN-PNP complementary Bipolar transistor; 双NPN -PNP互补双极晶体管
| 型号： | STS01DTP06_06 |
| 厂家： | 
ST |
| 描述： | Dual NPN-PNP complementary Bipolar transistor |
| 文件： | 总11页 (文件大小：306K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STS01DTP06
Dual NPN-PNP complementary Bipolar transistor
General features
V
h
I
C
CE(sat)
FE
0.35V
>100
1A
■ High gain
■ Low V
CE(sat)
■ Simplified circuit design
■ Reduced component count
SO-8
Applications
■ Push-Pull or Totem-Pole configuration
■ MOSFET and IGBT gate driving
■ Motor, relay and solenoid driving
Internal schematic diagram
Description
The STS01DTP06 is a Hybrid dual NPN-PNP
complementary power bipolar transistor
manufactured by using the latest low voltage
planar techlogy. The STS01DTP06 is housed in
dual island SO-8 package with separated
terminals for higher assembly flexibility,
specifically recommended to be used in Push-Pull
or Totem Pole configuration as post IGBTs and
MOSFETs driver.
Order codes
Part Number
Marking
Package
SO-8
Packing
STS01DTP06
S01DTP06
Tape & reel
March 2006
Rev 2
1/11
www.st.com
11
Contents
STS01DTP06
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
2.2
Electrical characteristics (curve) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2/11
STS01DTP06
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
NPN
PNP
V
Collector-base voltage (I = 0)
60
30
5
-60
-30
-5
V
V
CBO
E
V
Collector-emitter voltage (I = 0)
CEO
B
V
Emitter-base voltage (I = 0)
V
EBO
C
I
Collector current
3
-3
A
C
I
Collector peak current (t < 5ms)
6
-6
A
CM
P
I
Base current
1
-1
A
B
I
Base peak current (t < 1ms)
2
-2
A
BM
P
P
Total dissipation at T = 25°C single
2
W
W
°C
°C
tot
c
P
Total dissipation at T = 25°C couple
1.6
tot
c
T
Storage temperature
-65 to 150
150
stg
T
Max. operating junction temperature
J
Table 2.
Symbol
Thermal data
Parameter
Value
Unit
R
1 Thermal resistance junction-ambient____M__mMax
thj-amb
62.5
°C/W
(Single operation)
Thermal resistance junction-ambient____M__mMax
R
1
78
°C/W
thj-amb
(Dual operation)
1
When mounted on 1 inch square pad of 2 oz. copper, t ≤10 sec.
3/11
Electrical characteristics
STS01DTP06
2
Electrical characteristics
(T
= 25°C unless otherwise specified)
case
Table 3.
Symbol
Q1-NPN transistor electrical characteristics
Parameter
Test Conditions
Min. Typ. Max. Unit
Collector cut-off current
I
V
V
V
= 60V
0.1
1
µA
µA
µA
CBO
CB
CE
EB
(I = 0)
E
Collector cut-off current
I
= 30V
= 5V
CEO
(I = 0)
B
Emitter cut-off current
I
1
EBO
(I = 0)
C
Collector-emitter
breakdown voltage
(1)
I = 10mA
30
V
V
C
(BR)CEO
(I = 0)
B
I = 1A
I = 10mA
B
0.35
0.85
1
V
V
C
Collector-emitter
saturation voltage
(1)
V
CE(sat)
BE(sat)
I = 2A
I = 100mA
0.7
C
B
Base-emitter saturation
voltage
(1)
I = 1A
I = 10mA
1.1
V
V
C
B
I = 1A
V
V
= 2V
= 2V
100
30
C
CE
CE
(1)
DC current gain
h
FE
I = 3A
C
1. Pulsed: Pulse duration = 300 ms, duty cycle ≤ 1.5 %
(T
= 25°C unless otherwise specified)
case
Table 4.
Symbol
Q2-PNP transistor electrical characteristics
Parameter
Test Conditions
Min. Typ. Max. Unit
Collector cut-off current
I
V
V
V
= -60V
-0.1
-1
µA
µA
µA
CBO
CB
CE
EB
(I = 0)
E
Collector cut-off current
I
= -30V
= -5V
CEO
(I = 0)
B
Emitter cut-off current
I
-1
EBO
(I = 0)
C
Collector-emitter
breakdown voltage
(1)
I = -10mA
-30
V
V
C
(BR)CEO
(I = 0)
B
I = -1A
I = -10mA
B
-0.35
-1
V
V
C
Collector-emitter
saturation voltage
(1)
V
CE(sat)
I = -2A
I = -100mA
-0.7
C
B
4/11
STS01DTP06
Table 4.
Symbol
Q2-PNP transistor electrical characteristics
Parameter
Test Conditions
Min. Typ. Max. Unit
-0.85 -1.1
Base-emitter saturation
voltage
(1)
I = -1A
I = -10mA
V
V
C
B
BE(sat)
I = -1A
V
= -2V
= -2V
100
30
C
CE
CE
(1)
DC current gain
h
FE
I = -3A
V
C
1. Pulsed: Pulse duration = 300 ms, duty cycle ≤ 1.5 %
2.1
Electrical characteristics (curve)
Figure 1.
Reverse biased area Q1 NPN Figure 2.
transistor
DC current gain Q1 NPN
transistor
Figure 3.
DC current gain Q1 NPN
transistor
Figure 4.
Collector-emitter saturation
voltage Q1 NPN transistor
5/11
Electrical characteristics
Figure 5.
STS01DTP06
Base-emitter saturation
Figure 6.
Reverse biased area Q2 PNP
transistor
voltage Q1 NPN transistor
Figure 7.
DC current gain Q2 PNP
transistor
Figure 8.
DC current gain Q2 PNP
transistor
Figure 9.
Collector-emitter saturation Figure 10. Base-emitter saturation
voltage Q2 PNP transistor voltage Q2 PNP transistor
6/11
STS01DTP06
2.2
Test circuits
Figure 11. Typical application
7/11
Package mechanical data
STS01DTP06
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
8/11
STS01DTP06
SO-8 MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
TYP
MAX.
1.75
0.25
1.65
0.85
0.48
0.25
0.5
MIN.
MAX.
0.068
0.009
0.064
0.033
0.018
0.010
0.019
A
a1
a2
a3
b
0.1
0.003
0.65
0.35
0.19
0.25
0.025
0.013
0.007
0.010
b1
C
c1
D
45 (typ.)
4.8
5.8
5.0
6.2
0.188
0.228
0.196
0.244
E
1.27
3.81
e
0.050
0.150
e3
F
3.8
0.4
4.0
1.27
0.6
0.14
0.157
0.050
0.023
L
0.015
M
S
8 (max.)
9/11
Revision history
STS01DTP06
4
Revision history
Table 5.
Date
Revision history
Revision
Changes
22-Apr-2005
22-Mar-2006
1
2
Initial release.
New template
The limit of current in figure number six has been modified from 6.5A
to 6A.
30-Mar-2006
3
10/11
STS01DTP06
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11/11
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