STS17NH3LL_07 [STMICROELECTRONICS]
N-channel 30V - 0.004ohm - 17A - SO-8 STripFET Power MOSFET for DC-DC conversion; N沟道30V - 0.004ohm - 17A - SO-8的STripFET功率MOSFET用于DC-DC转换
| 型号： | STS17NH3LL_07 |
| 厂家： | 
ST |
| 描述： | N-channel 30V - 0.004ohm - 17A - SO-8 STripFET Power MOSFET for DC-DC conversion |
| 文件： | 总12页 (文件大小：307K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STS17NH3LL
N-channel 30V - 0.004Ω - 17A - SO-8
STripFET™ Power MOSFET for DC-DC conversion
General features
Type
VDSS
RDS(on)
ID
STS17NH3LL
30V
<0.0057Ω
17A(1)
1. This value is rated according to Rthj-pcb
■ Optimal R
x Qg trade-off @ 4.5 V
DS(on)
■ Conduction losses reduced
SO-8
■ Improved junction-case thermal resistance
■ Low threshold device
Description
This device utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology.
This process coupled to unique metallization
techniques realizes the most advanced low
voltage Power MOSFET in SO-8 ever produced.
Internal schematic diagram
Applications
■ Switching application
Order codes
Part number
Marking
Package
Packaging
STS17NH3LL
17H3LL-
SO-8
Tape & reel
January 2007
Rev 2
1/12
www.st.com
12
Contents
STS17NH3LL
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STS17NH3LL
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
30
16
Unit
VDS
VGS
Drain-source voltage (VGS = 0)
Gate- source voltage
V
V
(1)
ID
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
17
10.6
68
A
ID
A
(2)
IDM
A
(1)
Ptot
Total dissipation at TC = 25°C
Storage temperature
2.7
W
Tstg
Tj
-55 to 150
°C
Operating junction temperature
1. This value is rated according to Rthj-pcb
2. Pulse width limited by safe operating area
Table 2.
Thermal resistance
Symbol
Parameter
Value
Unit
Rthj-pcb(1) Thermal resistance junction-ambient max
1. When mounted on 1inch² FR-4 board, 2oz of Cu and t< 10sec
47
°C/W
3/12
Electrical characteristics
STS17NH3LL
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 3.
On/off states
Parameter
Symbol
Test conditions
Min
Typ.
Max Unit
Drain-source
V(BR)DSS
ID = 250 µA, VGS = 0
30
V
breakdown voltage
VDS = Max rating
1
Zero gate voltage
drain current (VGS = 0)
µA
µA
IDSS
VDS = Max rating @125°C
10
Gate-body leakage
current (VDS = 0)
IGSS
VGS
=
16V
100
nA
V
VGS(th) Gate threshold voltage
VDS = VGS, ID = 250µA
1
VGS = 10V, ID = 8.5A
VGS = 4.5V, ID = 8.5A
0.004 0.0057
0.005 0.0075
Ω
Ω
Static drain-source on
resistance
RDS(on)
Table 4.
Dynamic
Parameter
Symbol
Test conditions
Min
Typ.
Max
Unit
Input capacitance
Output capacitance
Reverse transfer
capacitance
1810
565
41
Ciss
Coss
Crss
pF
pF
pF
VDS=25V, f=1MHz, VGS
0
=
18
4.8
5.3
24
3
VDD=15V, ID=17A
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
nC
nC
nC
VGS=4.5V
(see Figure 13)
f=1 MHz Gate DC Bias = 0
Test signal level = 20mV
open drain
RG
Gate input resistance
0.5
1.5
Ω
4/12
STS17NH3LL
Electrical characteristics
Table 5.
Switching times
Symbol
Parameter
Test conditions
Min Typ. Max Unit
V
DD = 15V, ID = 8.5A
8
ns
ns
td(on)
tr
Turn-on delay time
Rise time
RG = 4.7Ω , VGS = 10V
(see Figure 15)
65
V
DD = 15V, ID = 8.5A
38
20
ns
ns
td(off)
tf
Turn-off delay time
Fall time
RG = 4.7Ω , VGS = 10V
(see Figure 15)
Table 6.
Source drain diode
Symbol
Parameter
Test conditions
Min Typ. Max Unit
17
68
A
A
ISD
ISDM
Source-drain current
Source-drain current (pulsed)
(1)
VSD
Forward on voltage
ISD = 17A, VGS = 0
1.3
V
22
32
ns
nC
A
ISD = 17A, di/dt = 100A/µs
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VDD = 15V, Tj = 25°C
(see Figure 14)
1.9
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
5/12
Electrical characteristics
STS17NH3LL
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
Figure 2. Thermal impedance
Figure 3. Output characterisics
Figure 4. Transfer characteristics
Figure 5. Normalized B
vs temperature
Figure 6. Static drain-source on resistance
VDSS
6/12
STS17NH3LL
Electrical characteristics
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs
vs temperature
temperature
Figure 11. Source-drain diode forward
characteristics
7/12
Test circuit
STS17NH3LL
3
Test circuit
Figure 12. Switching times test circuit for
resistive load
Figure 13. Gate charge test circuit
Figure 14. Test circuit for inductive load
switching and diode recovery times
Figure 15. Unclamped inductive load test
circuit
Figure 16. Unclamped inductive waveform
Figure 17. Switching time waveform
8/12
STS17NH3LL
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
9/12
Package mechanical data
STS17NH3LL
SO-8 MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
TYP
MAX.
1.75
0.25
1.65
0.85
0.48
0.25
0.5
MIN.
MAX.
0.068
0.009
0.064
0.033
0.018
0.010
0.019
A
a1
a2
a3
b
0.1
0.003
0.65
0.35
0.19
0.25
0.025
0.013
0.007
0.010
b1
C
c1
D
45 (typ.)
4.8
5.8
5.0
6.2
0.188
0.228
0.196
0.244
E
1.27
3.81
e
0.050
0.150
e3
F
3.8
0.4
4.0
1.27
0.6
0.14
0.157
0.050
0.023
L
0.015
M
S
8 (max.)
10/12
STS17NH3LL
Revision history
5
Revision history
Table 7.
Date
Revision history
Revision
Changes
01-Aug-2006
09-Jan-2007
1
2
First release
Complete version
11/12
STS17NH3LL
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相关型号：
STS17NH3LL_0710
N-channel 30 V - 0.004 Ω - 17 A - SO-8 STripFET™ Power MOSFET for DC-DC conversion
STMICROELECTR
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