STTA112U [STMICROELECTRONICS]

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE; TURBOSWITCH超快速高压二极管


型号：	STTA112U
厂家：	ST
描述：	TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE TURBOSWITCH超快速高压二极管二极管高压
文件：	总8页 (文件大小：76K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

STTA112U

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

MAIN PRODUCT CHARACTERISTICS

I_F(AV)

V_RRM

1200V

65ns

1.5V

t_rr(typ)

V_F(max)

FEATURES AND BENEFITS

SPECIFIC TO THE FOLLOWING OPERATIONS:

SNUBBING OR CLAMPING, DEMAGNETIZATION

ANDRECTIFICATION

ULTRA-FAST AND SOFT RECOVERY

VERY LOW OVERALL POWER LOSSES IN

BOTH THE DIODE AND THE COMPANION

TRANSISTOR

SMB

HIGH FREQUENCY OPERATION

HIGH REVERSE VOLTAGECAPABILITY

DESCRIPTION

TURBOSWITCH 1200V drastically cuts losses in

all high voltage operationswhich require extremely

fast, soft and noise-free power diodes.

They are particularly suitable in motor control

circuitries, or in primary of SMPS as snubber,

clamping or demagnetizing diodes. They are also

suitableforthe secondaryof SMPSas highvoltage

rectifier diodes.

Due to their optimized switching performances

they also highly decrease power losses in any

associated switching IGBT or MOSFET in all

freewheelmode operations.

ABSOLUTE RATINGS

Symbol

(limiting values)

Parameter

Value

Unit

V_RRM

I_F(RMS)

I_FRM

I_FSM

T_stg

Repetitive peak reverse voltage

RMS forward current

1200

Repetitive peak forward current

Surge non repetitive forward current

Storage temperature range

tp = 5 µs F = 5kHz square

tp = 10ms sinusoidal

- 65 to + 150

125

°C

T_j

Maximum operatingjunction temperature

TURBOSWITCH is a trademark of STMicroelectronics

November 1999 - Ed: 5A

1/8

STTA112U

THERMAL AND POWER DATA

Symbol

R_th(j-I)

P₁

Parameter

Test conditions

Value

Unit

°C/W

Junction to leadthermal resistance

Conductionpower dissipation

I_F(AV)= 0.8A = 0.5

1.4

Tlead= 93°C

P_max

Total power dissipation

Tlead= 90°C

1.5

Pmax = P1 + P3 (P3 = 10% P1)

STATIC ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Test conditions

Min

Typ

1.1

Max

Unit

V_{F *}

Forward voltage drop

I_F= 1A

Tj = 25°C

1.65

1.5

Tj = 125°C

I_{R **}

Reverseleakagecurrent

V_R= 0.8 x

V_RRM

Tj = 25°C

Tj = 125°C

300

µA

V_to

Threshold voltage

Dynamicresistance

Ip < 3.I_F(AV)

Tj = 125°C

1.15

350

Ω

Test pulses :

* tp = 380 µs, δ < 2%

** tp =5 ms , δ < 2%

To evaluatethe maximum conduction losses use the following equation :

P = V_tox I_F(AV)+ Rd x I_{F (RMS)}

DYNAMIC ELECTRICAL CHARACTERISTICS

TURN-OFF SWITCHING

Symbol

Parameter

Test conditions

Tj = 25°C

I_F= 0.5 A I_R= 1A

Min

Typ

Max

Unit

t_rr

Reverse recovery

time

Irr = 0.25A

I_F= 1 A dI_F/dt =-50A/µs V_R= 30V

115

1.8

I_RM

Maximum recovery

current

Tj = 125°C V_R= 600V I_F= 1A

dI /dt = -8 A/ s

dI /dt = -50 A/ s

S factor Softnessfactor

Tj = 125°C V_R= 600V I_F=1A

dI_F/dt = -50 A/µs

0.7

TURN-ON SWITCHING

Symbol

t_fr

Parameter

Test conditions

Min

Typ

Max

900

Unit

Forward recoverytime

Peak forward voltage

Tj = 25°C

I_F= 1 A, dI_F/dt = 8 A/µs

V_Fp

measured at 1.1 V_Fmax

2/8

STTA112U

Fig. 1: Conduction losses versus average current.

Fig. 2: Forward voltage drop versus forward cur-

rent (Maximum values).

IFM(A)

P1(W)

50.0

1.50

δ = 0.2

δ = 0.5

δ = 0.1

Tj=125°C

1.25

1.00

0.75

0.50

0.25

0.00

10.0

δ = 1

1.0

IF(av) (A)

VFM(V)

0.1

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Fig. 3: Relative variation of thermal transient im-

pedance junctionto lead versus pulse duration.

Fig. 4: Peakreverse recoverycurrent versus dI_F/dt

(90% confidence).

IRM(A)

15.0

VR=600V

Tj=125°C

IF=2*IF(av)

12.5

10.0

7.5

5.0

2.5

dIF/dt(A/µs)

0.0

20 40 60 80 100 120 140 160 180 200

Fig. 5: Reverse recovery time versus dI_F/dt (90%

confidence).

Fig. 6: Softnessfactor (tb/ta) versus dI_F/dt (Typical

values).

trr(ns)

S factor

300

1.00

VR=600V

Tj=125°C

IF=2*IF(av)

VR=600V

Tj=125°C

IF<2*IF(av)

250

200

150

100

0.80

0.60

0.40

dIF/dt(A/µs)

20 40 60 80 100 120 140 160 180 200

3/8

STTA112U

Fig. 7: Relative variation of dynamic parameters

versusjunctiontemperature(Reference Tj=125°C).

Fig. 8: Transient peak forward voltage versus

dI_F/dt (90% confidence).

VFP(V)

1.1

Tj=125°C

S factor

IF=2*IF(av)

1.0

0.9

IRM

0.8

Tj(°C)

dIF/dt(A/µs)

0.7

100

125

100

Fig. 9: Forward recovery time versus dI_F/dt (90%

confidence).

tfr(ns)

800

Tj=125°C

IF=2*IF(av)

700

600

VFR=1.1*VF max.

500

400

300

dIF/dt(A/µs)

200

100

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STTA112U

APPLICATION DATA

The 1200V TURBOSWITCH

designed to provide the lowest overall power

losses in all frequency or high pulsed current

operations.

series has been

In such application (fig. A to D), the way of

calculating the power losses is given below :

TOTAL LOSSES

due to the diode

P = P1+ P2+ P3+ P4+ P5 Watts

CONDUCTION

LOSSES

REVERSE

LOSSES

SWITCHING

LOSSES

SWITCHING

LOSSES

in the diode

due to the diode

Fig. A : ”FREEWHEEL MODE”.

SWITCHING

TRANSISTOR

DIODE:

TURBOSWITCH

F = 1/T

δ = tp/T

LOAD

5/8

STTA112U

APPLICATION DATA (Cont’d)

Fig. B : SNUBBER DIODE.

Fig. C : DEMAGNETIZINGDIODE.

PWM

F = 1/T δ = tp/T

Fig. D : RECTIFIER DIODE.

Fig. E : STATICCHARACTERISTICS.

Conduction losses :

P1 = V x I

+ R x I

to F(AV)

F (RMS)

Reverse losses:

P2 = V x I

)

R x (1 -

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STTA112U

APPLICATION DATA (Cont’d)

Fig. F : TURN-OFF CHARACTERISTICS.

Turn-on losses :

(in the transistor, due to the diode)

I_RM

3 2 S F

⁄

V_R

× ( + ×

)

P5 =

V_R×

6 x dI_Fdt

TRANSISTOR

_L×(S + ) ×

2 × d_IF⁄ dt

Turn-off losses :

dI /dt

DIODE

V_R

I_RM

× ×

_F⁄ dt

P3 =

6 x dI

ta tb

dI /dt

trr = ta + tb

S = tb / ta

Turn-off losses :

with non negligible serial inductance

RECTIFIER

OPERATION

dI_F/dt = V_R/L

ta tb

V_R

I_RM

F L

I_RM

P3’ =

6 x dI_F⁄ dt

dI /dt

I_RM

P3, P3’ and P5 are suitable for power MOSFET

and IGBT

V_R

trr = ta + tb

S = tb/ta

Fig. G : TURN-ON CHARACTERISTICS.

Fmax

Turn-on losses :

dI /dt

P4 = 0.4 (V - V ) x I x t x F

Fmax fr

1.1V

tfr

7/8

STTA112U

PACKAGE MECHANICAL DATA

SMB

DIMENSIONS

Millimeters Inches

Min. Max. Min.

REF.

Max.

0.096

0.008

0.087

0.016

0.220

0.181

0.156

0.063

1.90

0.05

1.95

0.15

5.10

4.05

3.30

0.75

2.45

0.20

2.20

0.41

5.60

4.60

3.95

1.60

0.075

0.002

0.077

0.006

0.201

0.159

0.130

0.030

FOOTPRINT DIMENSIONS (in millimeters)

2.3

1.52

2.75

1.52

Orderingtype

Marking

T03

Package

Weight

Base qty

Delivery mode

STTA112U

SMB

0.107g

2500

Tape & reel

Epoxy meets UL94,V0

Band indicatescathode

Information furnished is believedto be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of

use ofsuch information nor for any infringementof patents or other rights of third parties which may result from its use. No license is granted by

implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to

change without notice. This publication supersedes and replaces all information previously supplied.

STMicroelectronics products are not authorized for use as critical components in lifesupport devices or systems without express written ap-

proval of STMicroelectronics.

The ST logo is a registered trademark of STMicroelectronics

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8/8

STTA112U [STMICROELECTRONICS]

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