STTH12002TV [STMICROELECTRONICS]
HIGH EFFICIENCY ULTRAFAST DIODE; 高效率超快二极管
| 型号： | STTH12002TV |
| 厂家： | 
ST |
| 描述： | HIGH EFFICIENCY ULTRAFAST DIODE |
| 文件： | 总5页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
STTH12002TV
HIGH EFFICIENCY ULTRAFAST DIODE
MAIN PRODUCT CHARACTERISTICS
IF(AV)
VRRM
2 x 60 A
200 V
A1
A2
K1
K2
Tj (max)
VF (typ)
trr (typ)
150 °C
0.73 V
35 ns
K1
A1
FEATURES AND BENEFITS
K2
■
■
■
■
■
Suited for welding and high power equipment
Very low forward losses
Low recovery times
High surge current capability
Insulated:
A2
ISOTOP
STTH12002TV1
Insulating voltage = 2500 VRMS
Capacitance < 45 pF
■
Low leakage current
DESCRIPTION
Dual center tap rectifier suited for welding
equipment and high power industrial application.
Packaged in ISOTOP, this device is intended for
use in the secondary rectification of power
converters.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Parameter
Repetitive peak reverse voltage
Value
200
100
60
Unit
V
VRRM
IF(RMS) RMS forward current
Per diode
Per diode
A
IF(AV)
IFSM
Tstg
Tj
Average forward current δ =0.5
Tc = 105°C
A
Surge non repetitive forward current
Storage temperature range
tp = 10 ms Sinusoidal per diode
700
A
- 55 + 150 °C
150 °C
Maximum operating junction temperature
February 2004 - Ed: 1
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STTH12002TV
THERMAL PARAMETERS
Symbol
Parameter
Maximum
0.76
Unit
Rth (j-c) Junction to case
Per diode
°C/W
Per device
0.43
Rth (j-c) Coupling
0.1
°C/W
When the diodes 1 and 2 are used simultaneously:
∆ Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Tests conditions
Min. Typ. Max.
Unit
IR*
Reverse leakage
current
Tj = 25°C
Tj = 125°C
VR = VRRM
50
µA
50
500
1.05
1.15
0.82
0.98
VF**
Forward voltage drop Tj = 25°C
Tj = 25°C
IF = 60 A
IF = 120 A
IF = 60 A
IF = 120 A
V
Tj = 150°C
0.73
Tj = 150°C
Pulse test: * tp = 5ms, δ < 2%
** tp = 380µs, δ < 2%
To evaluate the maximum co2nduction losses use the following equation :
P = 0.66 x IF(AV) + 0.00266 IF (RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Reverse
Tests conditions
Min. Typ. Max. Unit
trr
Tj = 25°C
IF = 1 A VR = 30V
dIF/dt = 200 A/µs
35
43
ns
recovery time
IRM
Reverse
recovery current
Tj = 125°C IF = 60 A VR = 160V
dIF/dt = 200 A/µs
10.4
13.5
560
A
tfr
Forward
recovery time
Tj = 25°C
IF = 60 A dIF/dt = 200 A/µs
FR = 1.1 x VFmax
ns
V
V
VFP
Forward
Tj = 25°C
IF = 60 A dIF/dt = 200 A/µs
2.5
recovery voltage
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STTH12002TV
Fig. 1: Peak current versus duty cycle (per diode).
Fig. 2-1: Forward voltage drop versus forward
current (typical values, per diode).
I
(A)
M
I
(A)
FM
400
350
300
250
200
150
100
50
200
180
160
140
120
100
80
IM
T
tp
=tp/T
δ
Tj=150°C
P = 40W
P = 60W
P = 80W
60
Tj=25°C
40
20
V
(V)
FM
δ
0
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Fig. 2-2: Forward voltage drop versus forward
current (maximum values, per diode).
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
Z
/R
I
(A)
FM
th(j-c) th(j-c)
1.0
200
180
160
140
120
100
80
Tj=150°C
Single pulse
60
Tj=25°C
40
20
V
(V)
t (s)
p
FM
0
0.1
1.E-03
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.E-02
1.E-01
1.E+00
1.E+01
Fig. 4: Junction capacitance versus reverse
voltage applied (typical values, per diode).
Fig. 5: Reverse recovery charges versus dIF/dt
(typical values, per diode).
C(pF)
Q (nC)
rr
650
600
550
500
450
400
350
300
250
200
150
100
50
1000
IF=60A
VR=160V
F=1MHz
VOSC=30mVRMS
Tj=25°C
Tj=125°C
Tj=25°C
V (V)
R
dI /dt(A/µs)
F
100
0
0
50
100
150
200
10
100
1000
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STTH12002TV
Fig. 6: Reverse recovery time versus dIF/dt
(typical values, per diode).
Fig. 7: Peak reverse recovery current versus dIF/dt
(typical values, per diode).
t (ns)
rr
I
(A)
RM
100
90
80
70
60
50
40
30
20
10
0
18
16
14
12
10
8
IF=60A
VR=160V
IF=60A
VR=160V
Tj=125°C
Tj=125°C
6
Tj=25°C
Tj=25°C
4
2
dI /dt(A/µs)
F
dI /dt(A/µs)
F
0
10
100
1000
10
100
1000
Fig. 8: Dynamic parameters versus junction
temperature.
Q
rr RM
;I [T ]/Q ;I [T =125°C]
j
rr RM
j
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
IF=60A
VR=160V
IRM
Qrr
T (°C)
j
25
50
75
100
125
150
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STTH12002TV
PACKAGE MECHANICAL DATA
ISOTOP
DIMENSIONS
Millimeters Inches
Min.
REF.
Min.
11.80
8.90
Max.
12.20
9.10
Max.
0.480
0.358
0.323
0.033
0.081
1.504
1.248
1.004
0.951
A
A1
B
0.465
0.350
0.307
0.030
0.077
1.488
1.240
0.990
0.939
7.8
8.20
D
A
C
0.75
0.85
D1
P1
B
A1
C2
D
1.95
2.05
37.80
31.50
25.15
23.85
38.20
31.70
25.50
24.15
/
O P
D1
E
E1
F
G 1
E2
G 2
E
F1
E1
E2
G
24.80 typ.
0.976 typ.
C
C2
G
S
14.90
12.60
3.50
4.10
4.60
4.00
15.10
12.80
4.30
4.30
5.00
4.30
0.587
0.496
0.138
0.161
0.181
0.157
0.594
0.504
0.169
0.169
0.197
0.69
G1
G2
F
F1
P
Ordering code
STTH12002TV1
Marking
STTH12002TV1
Package
Weight
27 g
(without screws) (with screws)
Base qty Delivery mode
ISOTOP
10 Tube
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not au-
thorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners.
© 2004 STMicroelectronics - All rights reserved.
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