STTH16L06CT
更新时间：2024-09-18 01:40:47
描述：TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
概述
规格参数
数据手册
替代型号STTH16L06CT 概述
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER TURBO 2超快高压整流 二极管阵列 整流二极管
STTH16L06CT 规格参数
| 是否Rohs认证： | 符合 | 生命周期： | Active |
| 零件包装代码： | TO-220AB | 包装说明： | PLASTIC PACKAGE-3 |
| 针数： | 3 | Reach Compliance Code： | not_compliant |
| ECCN代码： | EAR99 | HTS代码： | 8541.10.00.80 |
| Factory Lead Time： | 11 weeks | 风险等级： | 1.99 |
| Is Samacsys： | N | 应用： | HIGH VOLTAGE ULTRA FAST RECOVERY |
| 配置： | COMMON CATHODE, 2 ELEMENTS | 二极管元件材料： | SILICON |
| 二极管类型： | RECTIFIER DIODE | 最大正向电压 (VF)： | 1.35 V |
| JEDEC-95代码： | TO-220AB | JESD-30 代码： | R-PSFM-T3 |
| JESD-609代码： | e3 | 最大非重复峰值正向电流： | 90 A |
| 元件数量： | 2 | 相数： | 1 |
| 端子数量： | 3 | 最高工作温度： | 175 °C |
| 最大输出电流： | 10 A | 封装主体材料： | PLASTIC/EPOXY |
| 封装形状： | RECTANGULAR | 封装形式： | FLANGE MOUNT |
| 峰值回流温度（摄氏度）： | NOT SPECIFIED | 认证状态： | Not Qualified |
| 最大重复峰值反向电压： | 600 V | 最大反向恢复时间： | 0.055 µs |
| 子类别： | Rectifier Diodes | 表面贴装： | NO |
| 端子面层： | Matte Tin (Sn) | 端子形式： | THROUGH-HOLE |
| 端子位置： | SINGLE | 处于峰值回流温度下的最长时间： | NOT SPECIFIED |
| Base Number Matches： | 1 |
STTH16L06CT 数据手册
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®
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
Table 1: Main Product Characteristics
A1
A2
I
Up to 2 x 10 A
600 V
F(AV)
K
V
RRM
T
175°C
j
V (typ)
1.05 V
F
t (max)
35 ns
rr
A2
K
A1
A2
K
FEATURES AND BENEFITS
A1
■
■
■
■
Ultrafast switching
Low reverse recovery current
Low thermal resistance
TO-220AB
STTH16L06CT
TO-220FPAB
STTH16L06CFP
Reduces switching & conduction losses
K
DESCRIPTION
A2
The STTH16L06, which is using ST Turbo 2 600V
technology, is specially suited for use in switching
power supplies, and industrial applications, as
rectification and discontinuous mode PFC boost
diode.
A1
2
D PAK
STTH16L06CG
Table 2: Order Codes
Part Number
STTH16L06CT
STTH16L06CFP
Marking
STTH16L06CT
STTH16L06CFP
Part Number
STTH16L06CG
STTH16L06GG-TR
Marking
STTH16L06CG
STTH16L06CG
Table 3: Absolute Ratings (limiting values, per diode)
Symbol Parameter
Repetitive peak reverse voltage
Value
Unit
V
600
V
A
A
RRM
I
RMS forward voltage
30
F(RMS)
2
I
Average forward
current
Tc = 140°C Per diode
Tc = 135°C Per device
Tc = 130°C Per diode
Tc = 120°C Per device
8
F(AV)
TO-220AB / D PAK
16
10
20
δ = 0.5
TO-220FPAB
Tc = 110°C Per diode
8
Tc = 80°C
Per device
16
I
Surge non repetitive forward current
Storage temperature range
tp = 10ms sinusoidal
90
-65 to + 175
175
A
FSM
T
°C
°C
stg
T
Maximum operating junction temperature
j
.
September 2004
REV. 1
1/8
STTH16L06C
Table 4: Thermal Resistance
Symbol
Parameter
Value (max).
Unit
2
R
Junction to case
Per diode
2.5
°C/W
th(j-c)
TO-220AB / D PAK
TO-220FPAB
Per diode
Total
5
2
1.6
TO-220AB / D PAK
TO-220FPAB
Total
3.8
0.7
2
R
Coupling
°C/W
th(c)
TO-220AB / D PAK
TO-220FPAB
2.5
When the diodes 1 and 2 are used simultaneously:
∆ Tj(diode 1) = P(diode 1) x R (Per diode) + P(diode 2) x R
th(j-c)
th(c)
Table 5: Static Electrical Characteristics
Symbol Parameter
I *
Test conditions
Min.
Typ
Max.
Unit
Reverse leakage current T = 25°C
V = V
RRM
8
µA
R
j
R
T = 150°C
25
240
1.8
j
V ** Forward voltage drop
T = 25°C
I = 8A
V
F
j
F
T = 150°C
1.05
1.28
1.35
2.08
1.64
j
T = 25°C
I = 16A
F
j
T = 150°C
j
Pulse test:
* tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
2
To evaluate the conduction losses use the following equation: P = 1.06 x I
+ 0.036 I
F(AV)
F (RMS)
Table 6: Dynamic Characteristics (per diode)
Symbol
Parameter
Test conditions
Min. Typ Max. Unit
t
Reverse recovery T = 25°C I = 0.5A Irr = 0.25A I =1A
35
55
ns
rr
j
F
R
time
I = 1A dI /dt = 50 A/µs V =30V
40
F
F
R
I
Reverse recovery T = 125°C I = 8A
V = 400V
4.5 6.5
A
ns
V
RM
j
F
R
current
dI /dt = 100 A/µs
F
t
Forward recovery T = 25°C I = 8A
dI /dt = 100 A/µs
F
200
fr
j
F
time
V
= 1.1 x V
Fmax
FR
V
Forward recovery T = 25°C I = 8A dI /dt = 100 A/µs
3.5
FP
j
F
F
voltage
V
= 1.1 x V
FR
Fmax
2/8
STTH16L06C
Figure 1: Conduction losses versus average
forward current (per diode)
Figure 2: Forward voltage drop versus forward
current (per diode)
I (A)
FM
P(W)
100
90
80
70
60
50
40
30
20
10
0
15
δ = 0.1
δ = 0.2
δ = 0.5
δ = 0.05
Tj=150°C
(maximum values)
10
δ = 1
Tj=150°C
(typical values)
Tj=25°C
(maximum values)
5
T
tp
=tp/T
δ
I
(A)
F(AV)
V
(V)
FM
0
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Figure 3: Relative variation of thermal
impedance junction to case versus pulse
duration (TO-220AB & D PAK)
Figure 4: Relative variation of thermal
impedance junction to case versus pulse
duration (TO-220FPAB)
2
Z
/R
Z
/R
th(j-c) th(j-c)
th(j-c) th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Single pulse
Single pulse
t (s)
p
t (s)
p
1.E-03
1.E-02
1.E-01
1.E+00
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
Figure 5: Peak reverse recovery current versus
dI /dt (typical values, per diode)
Figure 6: Reverse recovery time versus dI /dt
(typical values, per diode)
F
F
t (ns)
rr
I
(A)
RM
18
16
14
12
10
8
400
VR=400V
Tj=125°C
VR=400V
Tj=125°C
350
IF=2 x IF(AV)
IF=IF(AV)
300
IF=2 x IF(AV)
IF=0.5 x IF(AV)
250
200
IF=IF(AV)
IF=0.5 x IF(AV)
150
6
100
50
4
2
dI /dt(A/µs)
F
dI /dt(A/µs)
F
0
0
0
50
100
150
200
250
300
350
400
450
500
0
50
100
150
200
250
300
350
400
450
500
3/8
STTH16L06C
Figure 7: Reverse recovery charges versus
Figure 8: Reverse recovery softness factor
dI /dt (typical values, per diode)
versus dI /dt (typical values, per diode)
F
F
S factor
Q (nC)
rr
1.6
800
750
700
650
600
550
500
450
400
350
300
250
200
150
100
50
VR=400V
Tj=125°C
IF< 2 x IF(AV)
VR=400V
Tj=125°C
1.4
1.2
1.0
0.8
0.6
0.4
0.2
IF=2 x IF(AV)
IF=IF(AV)
IF=0.5 x IF(AV)
dI /dt(A/µs)
F
dI /dt(A/µs)
F
0
0.0
0
100
200
300
400
500
0
50
100
150
200
250
300
350
400
450
500
Figure 9: Relative variations of dynamic
parameters versus junction temperature
Figure 10: Transient peak forward voltage
versus dI /dt (typical values, per diode)
F
V
(V)
FP
16
15
14
13
12
11
10
9
1.4
IF=IF(AV)
Tj=125°C
S factor
1.2
1.0
0.8
0.6
trr
8
7
IF=IF(AV)
VR=400V
Reference: Tj=125°C
IRM
6
5
QRR
0.4
0.2
0.0
4
3
2
1
0
dI /dt(A/µs)
F
T (°C)
j
25
50
75
100
125
0
50
100
150
200
250
300
350
400
450
500
Figure 11: Forward recovery time versus dI /dt
(typical values, per diode)
Figure 12: Junction capacitance versus
reverse voltage applied (typical values, per
diode)
F
t (ns)
fr
C(pF)
180
160
140
120
100
80
100
F=1MHz
VOSC=30mVRMS
Tj=25°C
IF=IF(AV)
VFR=1.1 x VF max.
Tj=125°C
10
60
40
20
dI /dt(A/µs)
F
V (V)
R
0
1
0
100
200
300
400
500
1
10
100
1000
4/8
STTH16L06C
Figure 13: Thermal resistance junction to
ambient versus copper surface under tab
2
(epoxy FR4, e =35µm) (D PAK)
CU
R (°C/W)
th(j-a)
80
70
60
50
40
30
20
10
0
S (cm²)
CU
0
5
10
15
20
25
30
35
40
Figure 14: TO-220AB Package Mechanical Data
REF.
DIMENSIONS
Millimeters
Min.
Inches
Min.
Max.
4.60
1.32
2.72
0.70
0.88
1.70
1.70
5.15
2.70
10.40
Max.
0.181
0.051
0.107
0.027
0.034
0.066
0.066
0.202
0.106
0.409
A
C
D
E
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
M
4.40
1.23
2.40
0.49
0.61
1.14
1.14
4.95
2.40
10
0.173
0.048
0.094
0.019
0.024
0.044
0.044
0.194
0.094
0.393
A
H2
Dia
C
L5
L9
L7
L6
L4
L2
F2
F1
D
16.4 typ.
0.645 typ.
F
13
14
0.511
0.104
0.600
0.244
0.137
0.551
0.116
0.620
0.259
0.154
M
2.65
15.25
6.20
3.50
2.95
15.75
6.60
3.93
G1
E
G
2.6 typ.
0.102 typ.
Diam.
3.75
3.85
0.147
0.151
5/8
STTH16L06C
2
Figure 15: D PAK Package Mechanical Data
DIMENSIONS
Millimeters Inches
Min. Min.
REF.
Max.
4.60
2.69
0.23
0.93
1.70
0.60
1.36
9.35
10.40
5.28
15.85
1.40
1.75
3.20
Max.
0.181
0.106
0.009
0.037
0.067
0.024
0.054
0.368
0.409
0.208
0.624
0.055
0.069
0.126
A
A
A1
A2
B
B2
C
C2
D
E
G
L
L2
L3
M
4.40
2.49
0.03
0.70
1.14
0.45
1.23
8.95
10.00
4.88
15.00
1.27
1.40
2.40
0.173
0.098
0.001
0.027
0.045
0.017
0.048
0.352
0.393
0.192
0.590
0.050
0.055
0.094
E
C2
L2
D
L
L3
A1
B2
R
C
B
G
A2
M
*
V2
* FLAT ZONE NO LESSTHAN 2mm
R
0.40 typ.
0.016 typ.
V2
0°
8°
0°
8°
2
Figure 16: D PAK Foot Print Dimensions
(in millimeters)
16.90
10.30
5.08
1.30
3.70
8.90
6/8
STTH16L06C
Figure 17: TO-220FPAB Package Mechanical Data
DIMENSIONS
Millimeters Inches
Min. Max. Min.
4.4 4.6
REF.
A
Max.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.205
0.106
0.409
Typ.
B
H
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia.
0.173
0.098
0.098
0.018
0.03
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
2.7
2.75
0.7
1
1.7
1.7
5.2
2.7
10.4
Typ.
30.6
10.6
3.6
16.4
9.3
3.2
Dia
L6
L5
0.045
0.045
0.195
0.094
0.393
0.63
1.126
0.386
0.114
0.626
0.354
0.118
L2
L7
L3
D
F1
F2
16
L4
28.6
9.8
2.9
15.9
9
1.205
0.417
0.142
0.646
0.366
0.126
F
E
G1
G
3
Table 7: Ordering Information
Ordering type
STTH16L06CT
STTH16L06CG
Marking
STTH16L06CT
STTH16L06CG
Package
TO-220AB
Weight
2.23 g
1.48 g
Base qty Delivery mode
50
Tube
2
50
Tube
D PAK
2
STTH16L06CG-TR
STTH16L06CFP
STTH16L06CG
STTH16L06CFP
1.48 g
1.70 g
1000
50
Tape & eel
Tube
D PAK
TO-220FPAB
■
■
■
■
Epoxy meets UL94, V0
Cooling method: by conduction (C)
Recommended torque value: 0.8 m.N. (TO-220FPAB) / 0.55 m.N. (TO-220AB)
Maximum torque value: 1.0 m.N. (TO-220FPAB) / 0.70 m.N. (TO-220AB)
Table 8: Revision History
Date
Revision
Description of Changes
07-Sep-2004
1
First issue
7/8
STTH16L06C
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners
© 2004 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
8/8
STTH16L06CT 替代型号
| 型号 | 制造商 | 描述 | 替代类型 | 文档 |
| MUR1660CTG | ONSEMI | ULTRAFAST RECTIFIERS 8.0 AMPERES, 100−600 VOLTS | 功能相似 |
|
| BYV410-600,127 | NXP | BYV410-600 | 功能相似 |
|
| VS-HFA16TA60CPBF | VISHAY | Ultrafast and ultrasoft recovery | 功能相似 |
|
STTH16L06CT 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| STTH16L06GG-TR | STMICROELECTRONICS | TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER | 获取价格 |
|
| STTH16R04C | STMICROELECTRONICS | Ultrafast recovery diode | 获取价格 |
|
| STTH16R04CFP | STMICROELECTRONICS | Ultrafast recovery diode | 获取价格 |
|
| STTH16R04CG | STMICROELECTRONICS | Ultrafast recovery diode | 获取价格 |
|
| STTH16R04CG-TR | STMICROELECTRONICS | Ultrafast recovery diode | 获取价格 |
|
| STTH16R04CT | STMICROELECTRONICS | Ultrafast recovery diode | 获取价格 |
|
| STTH1L06 | STMICROELECTRONICS | TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER | 获取价格 |
|
| STTH1L06-Y | STMICROELECTRONICS | 汽车级600 V、1 A低压降超高速二极管 | 获取价格 |
|
| STTH1L06A | STMICROELECTRONICS | TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER | 获取价格 |
|
| STTH1L06RL | STMICROELECTRONICS | TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER | 获取价格 |
|
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