STV9378 [STMICROELECTRONICS]
VERTICAL DEFLECTION BOOSTER; 垂直偏转助推器
| 型号： | STV9378 |
| 厂家： | 
ST |
| 描述： | VERTICAL DEFLECTION BOOSTER |
| 文件： | 总5页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STV9378
VERTICAL DEFLECTION BOOSTER
ADVANCE DATA
.
.
.
.
.
.
POWER AMPLIFIER
FLYBACK GENERATOR
THERMAL PROTECTION
OUTPUT CURRENT UP TO 2.0APP
FLYBACK VOLTAGE UP TO 90V (on Pin 5)
INTERNAL REFERENCE VOLTAGE
HEPTAWATT
(Plastic Package)
DESCRIPTION
ORDER CODE : STV9378
Designed for monitors and high performance TVs,
the STV9378 vertical deflection booster delivers
flyback voltages up to 90V.
The STV9378operateswith supplies upto 42V and
provides up to 2App output current to drive the
yoke.
The STV9378 is offered in HEPTAWATT package.
PIN CONNECTIONS
7
6
5
4
3
2
1
Non-inverting Input and ReferenceVoltage
Output Stage Supply
Output
GND
Flyback Generator
Supply Voltage
Inverting Input
Tab connected to pin 4
1/5
July 1994
This is advance information on a new product now in development or undergoing evaluation. Detailsare subject to change without notice.
STV9378
BLOCK DIAGRAM
OUTPUT
STAGE
SUPPLY
SUPPLY
VOLTAGE
FLYBACK
GENERATOR
2
6
3
FLYBACK
GENERATOR
REFERENCE
VOLTAGE
INVERTING INPUT
1
7
POWER
AMPLIFIER
5
OUTPUT
NON-INVERTING INPUT
OR REFERENCE VOLTAGE
THERMAL
PROTECTION
STV9378
4
GROUND
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Supply Voltage (Pin 2) (see note 1)
Value
50
Unit
V
VS
V6
Flyback Peak Voltage (Pin 6) (see note 1)
Amplifier Input Voltage (Pins 1-7) (see note 1)
100
V
V1 , V7
IO
- 0.3, + VS
1.5
V
Maximum Output Peak Current (see notes 2 and 3)
Maximum Sink Current (first part of flyback) (t < 1ms)
Maximum Source Current (t < 1ms)
Operating Ambient Temperature
A
I3
1.5
A
I3
1.5
A
Toper
Tstg
Tj
- 20, + 75
- 40, + 150
+150
oC
oC
oC
Storage Temperature
Junction Temperature
Notes :
1.
Versus GND.
2.
3.
The output current can reach 4A peak for t ≤ 10µs (up to 120Hz).
Provided SOAR is respected (see Figures 1 and 2).
THERMAL DATA
Symbol
Parameter
Junction-case Thermal Resistance
Temperature for Thermal Shutdown
Value
3
Unit
oC/W
oC
oC
oC
Rth (j-c)
Tt
Max.
150
10
Hysteresis on Tt
∆Tt
Tjr
Recommended Max. Junction Temperature
120
2/5
STV9378
ELECTRICAL CHARACTERISTICS
(VS = 42V, TA = 25oC, unless otherwise specified)
Symbol
Parameter
Operating Supply Voltage Range
Pin 2 Quiescent Current
Pin 6 Quiescent Current
Max. Peak Output Current
Amplifier Bias Current
Test Conditions
Min.
Typ. Max.
Unit
V
VS
I2
10
42
I3 = 0, I5 = 0
I3 = 0, I5 = 0
10
10
20
30
1
mA
mA
A
I6
5
IO
I1
V1 = 1V
- 0.15
2.3
- 1
2.4
µ
A
V7
Internal Reference Voltage
2.2
V
∆V7
∆VS
Reference Voltage Drift versus VS
VS = 24 to 42V
2
4
mV/V
Kt
GV
Reference Voltage Drift versus Tj
Voltage Gain
100
150
ppm/oC
80
dB
V
V5L
Output Saturation Voltage to GND (Pin 4)
Output Saturation Voltage to Supply (Pin 6)
Diode Forward Voltage between Pins 5-6
Diode Forward Voltage between Pins 3-2
Saturation Voltage on Pin 3
I5 = 1A
1
1.5
2.1
2
V5H
I5 = - 1A
I5 = 1A
1.6
1.5
1.5
0.8
2.1
V
VD5 - 6
VD3 - 2
V3L
V
I3 = 1A
2
V
I3 = 20mA
1.2
2.9
V
V3SH
Saturation Voltage to Pin 2 (2nd part of flyback) I3 = - 1A
V
APPLICATION CIRCUIT
+ VS
CF
2
6
3
FLYBACK
GENERATOR
REFERENCE
VOLTAGE
R5
1
7
POWER
AMPLIFIER
5
THERMAL
10µF
PROTECTION
STV9378
4
R3
R2
R4
CL
R1
3/5
STV9378
Figure 1 : Output Transistors SOA
Figure 2 : Secondary Breakdown Temperature
Derating Curve
(for secondary breakdown)
(ISB = secondary breakdown current)
ISB (%)
100
IC (A)
10
@ T
= 25°C
case
90
80
70
1
-1
-2
10
10
t = 1ms
t = 10ms
t = 100ms
V
(V)
CE
Tcase (°C)
60
2
1
10
10
25
50
75
100
125
4/5
STV9378
PACKAGE MECHANICAL DATA : 7 PINS - PLASTIC HEPTAWAT
L
L1
L2
L5
L3
Dia.
L7
L6
Dimensions
Millimeters
Typ.
Inches
Typ.
Min.
Max.
4.8
1.37
2.8
1.35
0.55
08
Min.
Max.
0.189
0.054
0.110
0.053
0.022
0.031
0.035
0.105
0.205
0.307
0.409
0.409
A
C
D
D1
E
F
2.4
1.2
0.35
0.6
0.094
0.047
0.014
0.024
F1
G
0.9
2.41
4.91
7.49
2.54
5.08
7.62
2.67
5.21
7.8
10.4
10.4
0.095
0.193
0.295
0.100
0.200
0.300
G1
G2
H2
H3
L
L1
L2
L3
L5
L6
L7
M
10.05
0.396
16.97
14.92
21.54
22.62
0.668
0.587
0.848
0.891
2.6
15.1
6
3
15.8
6.6
0.102
0.594
0.236
0.118
0.622
0.260
2.8
5.08
0.110
0.200
M1
Dia.
3.65
3.85
0.144
0.152
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility
for the consequences of use of such information norfor any infringement of patents or other rights of third parties which may result
from itsuse. No licence is granted by implication or otherwise under anypatent or patent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
Purchase of I2C Components of SGS-THOMSON Microelectronics, conveys a license under the Philips
I2C Patent. Rights to use these components in a I2C system, is granted provided that the system conforms to
the I2C Standard Specifications as defined by Philips.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
5/5
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