STW43NM60N [STMICROELECTRONICS]
N-channel 600 V, 0.075 Ω, 35 A MDmesh™ II Power MOSFET TO-247; N沟道600 V ， 0.075 Ω ， 35一个的MDmesh II ™功率MOSFET TO- 247
| 型号： | STW43NM60N |
| 厂家： | 
ST |
| 描述： | N-channel 600 V, 0.075 Ω, 35 A MDmesh™ II Power MOSFET TO-247 |
| 文件： | 总12页 (文件大小：497K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STW43NM60N
N-channel 600 V, 0.075 Ω, 35 A MDmesh™ II Power MOSFET
TO-247
Features
VDSS
(@Tjmax)
RDS(on)
max
Type
ID
STW43NM60N
650 V
<0.088 Ω
35 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
3
2
1
TO-247
Application
■ Switching applications
Description
Figure 1.
Internal schematic diagram
This series of devices implements second
generation MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the Company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
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Table 1.
Device summary
Order code
STW43NM60N
Marking
Package
TO-247
Packaging
43NM60N
Tube
January 2009
Rev 3
1/12
www.st.com
12
Contents
STW43NM60N
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STW43NM60N
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
VDS
VGS
ID
Drain-source voltage (VGS = 0)
Gate- source voltage
600
30
V
V
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
35
A
ID
22
A
(1)
IDM
140
A
PTOT
dv/dt (2)
Tstg
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
Storage temperature
255
W
V/ns
°C
°C
15
–55 to 150
150
Tj
Max. operating junction temperature
1. Pulse width limited by safe operating area
2. ISD ≤ 35 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
0.49
50
°C/W
°C/W
Maximum lead temperature for soldering
purpose
Tl
300
°C
Table 4.
Symbol
Avalanche characteristics
Parameter
Value
Unit
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
IAS
14
A
Single pulse avalanche energy
EAS
1000
mJ
(starting TJ=25 °C, ID=IAS, VDD=50 V)
3/12
Electrical characteristics
STW43NM60N
2
Electrical characteristics
(T
= 25 °C unless otherwise specified)
CASE
Table 5.
Symbol
On/off states
Parameter
Test conditions
ID = 1 mA, VGS = 0
Min. Typ. Max. Unit
Drain-source
V(BR)DSS
600
V
breakdown voltage
VDD=480 V, ID = 35 A,
VGS=10 V
dv/dt (1) Drain source voltage slope
30
V/ns
Zero gate voltage
IDSS
V
DS = Max rating
1
µA
µA
drain current (VGS = 0)
VDS = Max rating, @125 °C
100
Gate-body leakage
IGSS
VGS
=
20 V
100
4
nA
V
current (VDS = 0)
VGS(th) Gate threshold voltage
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 17.5 A
2
3
Static drain-source on
resistance
RDS(on)
0.075 0.088
Ω
1. Characteristic value at turn off on inductive load
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
(1)
gfs
Forward transconductance VDS=15 V ID = 17.5 A
17
S
,
Input capacitance
Ciss
Coss
Crss
4200
290
30
pF
pF
pF
VDS = 50 V, f = 1 MHz,
VGS = 0
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
(2)
Coss eq.
VGS = 0, VDS = 0 to 480 V
600
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 480 V, ID = 35 A,
GS = 10 V,
130
22
nC
nC
nC
V
(see Figure 15)
66
f=1 MHz Gate DC Bias=0
Test signal level = 20 mV
open drain
Rg
Gate input resistance
1.4
Ω
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS
4/12
STW43NM60N
Electrical characteristics
Min. Typ. Max. Unit
Table 7.
Switching times
Parameter
Symbol
Test conditions
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
25
45
ns
ns
ns
ns
VDD = 300 V, ID = 17.5 A
RG = 4.7 Ω VGS = 10 V
(see Figure 14)
Turn-off delay time
Fall time
130
60
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min Typ. Max Unit
ISD
Source-drain current
35
A
A
(1)
ISDM
Source-drain current (pulsed)
140
(2)
VSD
Forward on voltage
ISD = 35 A, VGS = 0
1.5
V
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 35 A, di/dt = 100 A/µs
VDD = 100 V
540
12
ns
µC
A
Qrr
IRRM
(see Figure 16)
44
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 35 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 16)
660
14
ns
µC
A
Qrr
IRRM
45
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
5/12
Electrical characteristics
STW43NM60N
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
AM00887v1
I
D
(A)
100
10µs
Operation in this area is
Limited by max RDS(on)
100µs
10
1
1ms
10ms
0.1
10
VDS(V)
0.1
1
100
Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
AM00888v1
AM00889v1
ID
(A)
ID
(A)
VGS=10V
100
100
7V
80
60
40
80
60
40
6V
5V
20
0
20
0
5
2
20
25 VDS(V)
8
10 VGS(V)
0
10
15
0
4
6
Figure 6.
Transconductance
Figure 7.
Static drain-source on resistance
AM00890v1
AM00891v1
GFS
(S)
RDS(on)
(Ω)
ID=17.5A
VGS=10V
TJ=-50°C
0.080
20.5
0.078
TJ=25°C
0.076
0.074
0.072
15.5
TJ=150°C
10.5
5.5
0.070
0.068
0.066
0.5
20
30
20
30
10
10
ID(A)
ID(A)
0
0
6/12
STW43NM60N
Electrical characteristics
Figure 8.
Gate charge vs gate-source voltage Figure 9.
Capacitance variations
AM00892v1
AM00893v1
VGS
C
(V)
(pF)
VDD=480V
10
VGS=10V
10000
1000
ID=35A
Ciss
8
6
4
Coss
Crss
100
10
1
2
0
40
60
80
120
0.1
100
100
Qg(nC)
VDS(V)
0
20
1
10
Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs
vs temperature temperature
AM00894v1
AM00895v1
VGS(th)
RDS(on)
(norm)
(norm)
1.10
1.00
0.90
2.0
1.5
1.0
0.5
0.80
0.70
-50
-50
-25
-25
0
25 50 75
TJ(°C)
0
25 50 75
TJ(°C)
100
100
Figure 12. Source-drain diode forward
characteristics
Figure 13. Normalized B
vs temperature
VDSS
AM00896v1
AM00897v1
VSD
BVDSS
(V)
(norm)
1.0
1.06
1.03
1.00
TJ=-50°C
0.9
0.8
TJ=-50°C
0.7
0.6
TJ=150°C
0.98
0.95
0.92
0.5
0.4
0
-50
-25
10
20
30
40
50 ISD(A)
0
25 50 75
TJ(°C)
100
7/12
Test circuits
STW43NM60N
3
Test circuits
Figure 14. Switching times test circuit for
resistive load
Figure 15. Gate charge test circuit
Figure 16. Test circuit for inductive load
switching and diode recovery times
Figure 17. Unclamped inductive load test
circuit
Figure 18. Unclamped inductive waveform
Figure 19. Switching time waveform
8/12
STW43NM60N
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
9/12
Package mechanical data
STW43NM60N
TO-247 Mechanical data
mm.
Typ
Dim.
Min.
Max.
A
A1
b
4.85
5.15
2.20
1.0
2.60
1.40
2.40
3.40
b1
b2
c
2.0
3.0
0.40
19.85
15.45
0.80
D
20.15
15.75
E
e
5.45
18.50
5.50
L
14.20
14.80
4.30
L1
L2
øP
øR
S
3.70
3.55
3.65
4.50
5.50
10/12
STW43NM60N
Revision history
5
Revision history
Table 9.
Date
Document revision history
Revision
Changes
16-Nov-2007
23-Sep-2008
1
2
First release
Document status promoted from preliminary data to datasheet.
VGS value has been modified in Table 2: Absolute maximum
ratings
14-Jan-2009
3
11/12
STW43NM60N
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