select brandShort,logo,brand from pdf_brand where id=10008 limit 1 T-ICTE5S_技术文档

T-ICTE5S [STMICROELECTRONICS]

T-ICTE5S;
T-ICTE5S
型号: T-ICTE5S
厂家: ST    ST
描述:

T-ICTE5S

文件: 总4页 (文件大小:286K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

T-ICTE5SC

T-ICTE5SC

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STMICROELECTR

T-IRFC250

Power Field-Effect Transistor, 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IXYS

T-IRFC254

Power Field-Effect Transistor, 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IXYS

T-IRFC460

Power Field-Effect Transistor, 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IXYS

T-IRFC470

Power Field-Effect Transistor, 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IXYS

T-ISLT-2-2131

6000MHz - 18000MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 1.75dB INSERTION LOSS

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CRANE

T-ISLT-2-2134

500MHz - 1000MHz RF/MICROWAVE DIVERSITY SWITCH, 0.8dB INSERTION LOSS, HERMETIC SEALED, MINIATURE PACKAGE

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CRANE

T-IXFD10N100

Power Field-Effect Transistor, 1000V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IXYS

T-IXFD10N90-L

Power Field-Effect Transistor, 900V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IXYS

T-IXFD12N90-L

Power Field-Effect Transistor, 900V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IXYS

T-IXFD13N50

Power Field-Effect Transistor, 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IXYS

T-IXFD13N80

Power Field-Effect Transistor, 800V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IXYS

T-IXFD14N100

Power Field-Effect Transistor, 1000V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IXYS

T-IXFD14N80

Power Field-Effect Transistor, 800V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IXYS

T-IXFD21N50

Power Field-Effect Transistor, 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IXYS

T-IXFD24N50

Power Field-Effect Transistor, 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IXYS

T-IXFD30N50

Power Field-Effect Transistor, 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IXYS

T-IXFD40N30

暂无描述

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IXYS

T-IXFD42N20

Power Field-Effect Transistor, 200V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IXYS

T-IXFD68N20

Power Field-Effect Transistor, 200V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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IXYS