T1020-700W [STMICROELECTRONICS]
700V, 10A, SNUBBERLESS TRIAC, PLASTIC, ISOWATT220AB, 3 PIN;
| 型号： | T1020-700W |
| 厂家： | 
ST |
| 描述： | 700V, 10A, SNUBBERLESS TRIAC, PLASTIC, ISOWATT220AB, 3 PIN 局域网 栅 三端双向交流开关 栅极 |
| 文件： | 总5页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
T1020W
T1030W
SNUBBERLESS TRIAC
FEATURES
A2
A1
ITRMS = 10 A
VDRM = VRRM = 400V to 800V
EXCELLENT SWITCHING PERFORMANCES
INSULATING VOLTAGE = 1500V(RMS)
U.L. RECOGNIZED : E81734
G
DESCRIPTION
The T1020/1030W triacs use high performance
glass passivated chip technology,housedin a fully
molded plastic ISOWATT220AB package.
The SNUBBERLESSTM concept offers suppres-
sion of R-C network, and is suitable for applica-
tions such as phase control and static switch on
inductive and resistive loads.
A1
A2
G
ISOWATT220AB
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current
(360° conductionangle)
Tc= 90°C
10
A
ITSM
Non repetitivesurge peak on-state current
(Tj initial = 25°C )
tp = 16.7 ms
(1 cycle, 60 Hz)
110
125
A
tp = 10 ms
(1/2 cycle, 50 Hz)
I2t
I2t Value (half-cycle, 50 Hz)
tp = 10 ms
78
20
A2s
dI/dt
Critical rate of rise of on-state current
Gate supply : IG = 500 mA
Repetitive
F = 50 Hz
A/µs
dIG /dt = 1 A/µs.
Non Repetitive
100
Tstg
Tj
Storage temperature range
- 40 to + 150
- 40 to + 125
°C
°C
Operating junction temperature range
Tl
Maximum lead temperature for soldering during 10s at 4.5 mm
from case
260
T1020 / 1030-xxxW
Symbol
Parameter
Unit
400
600
700
700
800
Repetitive peak off-state voltage
Tj = 125°C
VDRM
VRRM
400
600
800
V
November 1996
1/5
T1020W / 1030W
THERMAL RESISTANCES
Symbol
Parameter
Value
50
Unit
°C/W
°C/W
Rth(j-a)
Rth(j-c)
Junction to ambient
Junction to case for A.C (360°conduction angle)
3.0
GATE CHARACTERISTICS (maximum values)
PG (AV)= 1 W PGM = 10 W (tp = 20 µs)
IGM = 4 A (tp = 20 µs)
ELECTRICAL CHARACTERISTICS
Symbol
IGT
Test Conditions
Quadrant
I-II-III
T1020
T1030
Unit
mA
V
VD=12V (DC) RL=33Ω
VD=12V (DC) RL=33Ω
VD=VDRM RL=3.3kΩ
Tj= 25°C
Tj= 25°C
Tj= 125°C
Tj= 25°C
MAX
MAX
MIN
20
30
VGT
I-II-III
1.5
0.2
2
VGD
tgt
I-II-III
V
VD=VDRM IG = 500mA
dlG/dt= 3Aµs
I-II-III
TYP
µs
IH *
IT= 100mA
Gate open
Tj= 25°C
Tj= 25°C
Tj= 25°C
Tj= 125°C
Tj= 125°C
MAX
MAX
MAX
MAX
MIN
35
50
VTM
*
ITM= 14A tp= 380µs
1.5
10
2
V
IDRM
IRRM
VDRM rated
VRRM rated
µA
mA
V/µs
dV/dt *
Linear slope up to
VD=67%VDRM
200
10
300
20
Gate open
(dV/dt)c * (dI/dt)c = 5.3 A/ms (see note) Tj= 125°C
MIN
V/µs
* For either polarity of electrode A2 voltage with reference to electrode A1.
Note : Inusual applications where (dI/dt)c is below 5.3 A/ms, the (dV/dt)c is always lower than 10V/µs, and, therefore, it is unnecessary touse
a snuber R-C network accross T1020W / T1030W triacs.
2/5
T1020W / 1030W
Fig.1 : Maximum power dissipation versus RMS
on-state current.
Fig.2 : Correlation between maximum power dissi-
pation and maximum allowable temperature
(Tamb and Tcase) for different thermal resistances
heatsink + contact.
Tcase (oC)
P (W)
P(W)
14
14
12
10
8
-85
Rth = 0 o C/W
2.5o C/W
5o C/W
180 O
= 180o
12
= 120o
7o C/W
-95
10
= 90o
8
= 60o
-105
-115
-125
6
6
= 30o
4
2
4
2
I
(A)
Tamb (oC)
T(RMS)
0
0
0
1
2
3
4
5
6
7
8
9
10
0
10 20 30 40 50 60 70 80 90 100 110 120 130
Fig.3 : RMSon-state current versuscase tempera-
ture.
Fig.4 : Thermal transient impedance junction to
case and junction to ambient versus pulse dura-
tion.
Zth/Rth
1
I
(A)
T(RMS)
12
10
8
Zth(j-c)
= 180o
0.1
Zth(j-a)
6
4
0.01
2
Tcase(oC)
tp(s)
1E+2 5E+2
0
1E-3
1E+1
0
10 20 30 40 50 60 70 80 90 100 110 120 130
1E-2
1E-1
1E+0
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.
Igt[Tj]
Ih[Tj]
I
(A)
TSM
Igt[Tj=25 o C] Ih[Tj=25 o C]
120
Tj initial = 25oC
2.6
2.4
2.2
2.0
100
80
60
40
20
0
Igt
1.8
1.6
1.4
1.2
1.0
Ih
0.8
0.6
0.4
Number of cycles
10
Tj(oC)
-40 -20
0
20
40
60
80 100 120 140
1
100
1000
3/5
T1020W / 1030W
Fig.7 : Non repetitive surge peak on-state current
for a sinusoidal pulse with width : tp ≤ 10ms, and
correspondingvalue of I2t.
Fig.8 : On-statecharacteristics(maximum values).
2
2
I
(A). I t (A s)
I
(A)
TSM
TM
1000
100
10
1000
100
10
Tj initial = 25oC
I
TSM
Tj initial
25oC
2
I
t
Tj max
Vto =0.9V
Rt =0.038
Tj max
V
(V)
tp(ms)
TM
1
1
0
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
1
10
4/5
T1020W / 1030W
PACKAGE MECHANICAL DATA
ISOWATT220AB
DIMENSIONS
Millimeters Inches
REF.
Min.
10
15.9
9.8
Max.
10.4
16.4
10.6
30.6
Min.
Max.
0.409
0.645
0.417
1.204
A
B
0.393
0.626
0.385
1.126
B1
C
D
E
28.6
16 typ
0.630 typ
9
9.3
4.6
3.2
2.7
0.7
2.75
5.2
2.7
1.7
1
0.354
0.173
0.118
0.098
0.015
0.098
0.195
0.094
0.045
0.030
0.366
0.181
0.126
0.106
0.027
0.108
0.204
0.106
0.067
0.039
H
I
4.4
3
J
L
2.5
0.4
2.5
4.95
2.4
1.15
0.75
M
N
N1
O
P
Cooling method : C
Marking : Type number
Weight : 2.1g
Recommended torque value : 0.55 m.N.
Maximum torque value : 0.70 m.N.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized foruse as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
1996 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco -
The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
5/5
相关型号：
©2020 ICPDF网 联系我们和版权申明