T1035 [STMICROELECTRONICS]
10A - 600V - D2PAK封装Snubberless™三端双向可控硅;
| 型号： | T1035 |
| 厂家： | 
ST |
| 描述： | 10A - 600V - D2PAK封装Snubberless™三端双向可控硅 变压器 共模扼流圈 可控硅 |
| 文件： | 总4页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BTA10 GP
TRIACS
FEATURES
.
.
.
.
LOW I = 13mA max
H
HIGH SURGE CURRENT : I
= 120A
TSM
I
SPECIFIED IN FOUR QUADRANTS
GT
INSULATING VOLTAGE = 2500V
(UL RECOGNIZED : E81734)
(RMS)
A1
A2
DESCRIPTION
G
The BTA10 GP’s use high performance, glass pas-
sivated chips.
The insulated TO220AB package, the high surge
current and low holding current make this family
well adapted to LIGHT DIMMER applications.
TO220AB
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
I
RMS on-state current
(360° conduction angle)
Tc = 90 °C
10
A
T(RMS)
I
Non repetitive surge peak on-state current
( Tj initial = 25°C )
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
126
120
72
A
TSM
2
I t
2
2
A s
I t value
dI/dt
Critical rate of rise of on-state current
Repetitive
F = 50 Hz
10
A/µs
Gate supply : I = 500mA di /dt = 1A/µs
G
G
Non
50
Repetitive
Tstg
Tj
Storage and operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
°C
Tl
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
260
°C
Symbol
Parameter
BTA10-
Unit
400 GP
400
600 GP
V
V
Repetitive peak off-state voltage
Tj = 125 °C
600
V
DRM
RRM
1/4
March 1995
BTA10 GP
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
°C/W
°C/W
°C/W
Rth (j-a)
Junction to ambient
60
4
Rth (j-c) DC Junction to case for DC
Rth (j-c) AC Junction to case for 360° conduction angle
3
( F= 50 Hz)
GATE CHARACTERISTICS (maximum values)
P
= 1W
P
GM
= 10W (tp = 20 µs)
I
= 4A (tp = 20 µs)
V = 16V (tp = 20 µs).
GM
G (AV)
GM
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
Suffix
GP
50
Unit
I
V =12V (DC) R =33Ω
Tj=25°C
I-II-III
IV
MAX
MAX
MAX
MIN
mA
GT
D
L
75
V
V =12V (DC) R =33Ω
Tj=25°C
Tj=110°C
Tj=25°C
I-II-III-IV
I-II-III-IV
I-II-III-IV
1.5
0.2
2
V
V
GT
D
L
V
V =V
R =3.3kΩ
L
GD
D
DRM
DRM
tgt
V =V
I
= 500mA
TYP
µs
D
G
dI /dt = 3A/µs
G
I
L
I
=1.2 I
Tj=25°C
I-III-IV
II
TYP
20
40
mA
G GT
I
*
I = 100mA gate open
Tj=25°C
Tj=25°C
Tj=25°C
Tj=110°C
Tj=110°C
MAX
MAX
MAX
MAX
MIN
13
mA
V
H
T
V
*
I
= 14A tp= 380µs
1.5
0.01
0.5
30
TM
TM
I
I
V
V
Rated
Rated
mA
DRM
RRM
DRM
RRM
dV/dt *
Linear slope up to V =67%V
D
gate open
V/µs
V/µs
DRM
TYP
MIN
100
1
(dV/dt)c * (dI/dt)c= 2.2A/ms
Tj=110°C
TYP
10
* For either polarity of electrode A2 voltage with reference to electrode A1.
2/4
BTA10 GP
Fig.1 : Maximum RMS power dissipation versus RMS
on-state current (F=50Hz).
(curves are cut off by (dI/dt)c limitation)
Fig.2
:
Correlation between maximum RMS power
dissipation and maximum allowable temperatures (T
and T
contact.
amb
) for different thermal resistances heatsink +
case
Tcase (oC)
-85
P (W)
14
P(W)
14
180 O
Rth = 0 o C/W
2.5o C/W
= 180o
= 120o
= 90o
= 60o
5o C/W
12
10
8
12
10
8
6
10o C/W
-95
-105
-115
-125
6
= 30 o
4
4
2
2
Tamb (oC)
20 40
I
(A)
T(RMS)
0
0
0
0
1
2
3
4
5
6
7
8
9
10
60
80
100 120 140
Fig.3 : RMS on-state current versus case temperature.
Fig.4 : Relative variation of thermal impedance versus
pulse duration.
Zth/Rth
1
I
(A)
T(RMS)
12
10
8
Zth(j-c)
0.1
Zth(j-a)
6
= 180o
4
2
Tcase(oC)
10 20 30 40 50 60 70 80 90 100 110 120 130
tp(s)
1E+2 5E+2
0.01
1E-3
0
0
1E-2
1E-1
1E+0
1E+1
Fig.5 : Relative variation of gate trigger current and
Fig.6 : Non repetitive surge peak on-state current
holding current versus junction temperature.
versus number of cycles.
3/4
BTA10 GP
Fig.7 : Non repetitive surge peak on-state current for a
Fig.8 : On-state characteristics (maximum values).
sinusoidal pulse with width
corresponding values of I t.
:
t
≤
10ms, and
2
PACKAGE MECHANICAL DATA
TO220AB Plastic
REF.
DIMENSIONS
Millimeters Inches
Min. Min.
H
Max.
10.50
15.87
14.70
6.85
4.50
3.00
4.82
4.00
1.39
0.65
2.70
5.58
1.20
0.96
Max.
0.413
0.625
0.579
0.270
0.178
0.119
0.190
0.158
0.055
0.026
0.107
0.22
A
J
G
A
B
C
D
F
10.20
14.23
12.70
5.85
0.401
0.560
0.500
0.230
I
D
B
G
H
I
2.54
4.48
3.55
1.15
0.35
2.10
4.58
0.80
0.64
0.100
0.176
0.140
0.045
0.013
0.082
0.18
F
O
L
J
P
C
L
M
N
O
P
M
N
=
=
0.031
0.025
0.048
0.038
Cooling method : C
Marking : type number
Weight : 2.3 g
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Nether-
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4/4
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