T1610T-6I [STMICROELECTRONICS]
Snubberlessâ¢, logic level and standard 16 A Triacs; Snubberlessâ ?? ¢ ，逻辑电平标准的16 A三端双向可控硅
| 型号： | T1610T-6I |
| 厂家： | 
ST |
| 描述： | Snubberlessâ¢, logic level and standard 16 A Triacs |
| 文件： | 总9页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
T16T
Snubberless™, logic level and standard 16 A Triacs
Features
A2
■ Medium current Triac
■ High static and dynamic commutation
■ Low thermal resistance with clip bonding
■ Packages is RoHS (2002/95/EC) compliant
G
A1
■ 600 V V
RM
A1
A2
Applications
G
■ Value sensitive application
TO-220AB insulated
(T16xxT-6I)
■ General purpose ac line load switching
■ Motor control circuits in power tools
■ Small home appliances, lighting
■ Inrush current limiting circuits
■ Overvoltage crowbar protection
Table 1.
Device summary
Order code
Symbol
Value
IGT 3Q
logic level
T1610T-6I
10 mA
Description
T1620T-6I
T1635T-6I
IGT 3Q
Snubberless
20 / 35 mA
Available in through-hole, the T16T series of
Triacs can be used as on/off or phase angle
control function in general purpose ac switching
where high commutation capability is required.
This series can be designed-in in many value
sensitive appliances thanks to the parameters
guidance provided in the following pages.
Provides insulation rated at 2500 V rms
(TO-220AB insulated package).
TM: Snubberless is a trademark of STMicroelectronics
January 2010
Doc ID 16488 Rev 2
1/9
www.st.com
9
Characteristics
T16T
1
Characteristics
Table 2.
Symbol
Absolute maximum ratings (limiting values; T = 25 °C, unless otherwise specified)
j
Parameter
Value
Unit
IT(RMS) On-state rms current (full sine wave)
Tc = 86 °C
tp = 20 ms
tp = 16.7 ms
16
A
F = 50 Hz
F = 60 Hz
tp = 10 ms
120
126
105
Non repetitive surge peak on-state current (full
cycle, Tj initial = 25 °C)
ITSM
A
²
²
²
I t
I t Value for fusing
A s
Critical rate of rise of on-state current IG = 2 x IGT
tr ≤ 100 ns
dI/dt
F = 60 Hz
Tj = 125 °C
Tj = 25 °C
50
A/µs
V
VDSM
/
Non repetitive surge peak off-state
VRSM voltage
VDRM/VRRM
+ 100
tp = 10 ms
tp = 20 µs
IGM
Peak gate current
Tj = 125 °C
Tj = 125 °C
4
A
PG(AV) Average gate power dissipation
1
W
°C
°C
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
2/9
Doc ID 16488 Rev 2
T16T
Characteristics
Unit
Table 3.
Symbol
Electrical characteristics (Tj = 25 °C, unless otherwise specified)
T16xxT
Test conditions
Quadrant
T1610T T1620T T1635T
I - II - III
IV
10
20
35
(1)
IGT
VD = 12 V RL = 30 Ω
MAX.
MAX.
mA
V
VD = VDRM, RL = 3.3 kΩ,
Tj = 25 °C
VGT
ALL
ALL
1.3
0.2
VD = VDRM, RL = 3.3 kΩ,
Tj = 125 °C
VGD
MIN.
V
(2)
IH
IT = 500 mA
MAX.
12
20
25
35
40
50
mA
I - III
IL
IG = 1.2 IGT
IV
II
MAX.
MIN.
mA
30
100
20
8
40
80
Tj = 125 °C
Tj = 150 °C(3)
1000
500
2000
1000
dV/dt (2) VD = 67% VDRM, gate open
V/µs
(dV/dt)c = 0.1 V/µs
(dV/dt)c = 10 V/µs
Tj = 125 °C
4
Without snubber
(di/dt)c (2)
6
3
16
12
MIN.
A/ms
(dV/dt)c = 0.1 V/µs
3
1
Tj = 150 °C(3)
(dV/dt)c = 10 V/µs
Without snubber
1. minimum I
is guaranted at 5% of I
max.
GT
GT
2. for both polarities of A2 referenced to A1.
3. derating information for excess temperature above Tj max.
Table 4.
Symbol
Static characteristics
Test conditions
Value
Unit
(1)
VT
ITM = 22.6 A, tp = 380 µs
Threshold voltage
Tj = 25 °C
MAX.
1.55
0.85
30
V
V
(1)
VTO
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
MAX.
MAX.
(1)
RD
Dynamic resistance
mΩ
µA
5
VDRM = VRRM
MAX.
TYP.
IDRM
IRRM
Tj = 125 °C
Tj = 150 °C(2)
1
mA
VD = 0.9 x VDRM
1.9
1. for both polarities of A2 referenced to A1.
2. derating information for excess temperature above Tj max.
Doc ID 16488 Rev 2
3/9
Characteristics
T16T
Table 5.
Symbol
Thermal resistance
Parameter
Value
Unit
Rth(j-c) Junction to case (AC)
2.1
60
°C/W
°C/W
Rth(j-a) Junction to ambient (DC)
Figure 1.
Maximum power dissipation versus Figure 2.
rms on-state current (full cycle)
On-state rms current versus case
temperature (full cycle)
P(W)
20
I
(A)
T(RMS)
180°
α = 180°
16
14
12
10
8
α = 180°
18
16
14
12
10
8
TO-220 ins.
6
6
4
4
2
2
I
(A)
T(RMS)
T
(°C)
C
0
0
0
25
50
75
100
125
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16
Figure 3.
On-state rms current versus
ambient temperature
Figure 4.
Relative variation of thermal
impedance versus pulse duration
I
(A)
T(RMS)
K = [Z / R
th
]
th
1.0E+00
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Z
th(j-c)
α = 180°
Z
th(j-a)
TO-220AB
TO-220 ins.
1.0E-01
1.0E-02
TO-220AB
T
(s)
p
T (°C)
a
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
0
25
50
75
100
125
Figure 5.
On state characteristics
(maximum values)
Figure 6.
Surge peak on state current versus
number of cycles
I
TM
(A)
I
(A)
1000
TMS
120
100
80
t = 20 ms
Non repetitive
100
10
One cycle
T initial = 25 °C
j
60
Repetitive
= 86 °C
T
c
40
20
T = 125 °C
j
T max:
j
T = 25 °C
j
V
R
= 0.85 V
to
= 25 mW
TO-220AB ins.
Number of cycles
100 1000
V
(V)
d
TM
0
1
1
10
0
1
2
3
4
4/9
Doc ID 16488 Rev 2
T16T
Characteristics
Figure 7.
Non repetitive surge peak on state Figure 8.
current for a sinusoidal
Relative variation of gate trigger
current and gate trigger voltage
versus junction temperature
I
, V [T ] / I , V [T = 25 °C]
I
(A), I²t (A²s)
GT GT
j
GT GT
j
TSM
10000
1000
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
T initial = 25 °C
j
I
Q3
GT
I
Q1-Q2
GT
I
TSM
dl /dt limitation: 50 A / µs
I
Q1-Q2-Q3
GT
I²t
T (°C)
j
t
(ms)
p
10
0.01
0.10
1.00
10.00
-50
-25
0
25
50
75
100
125
Figure 9.
Relative variation of holding
current and latching current versus
junction temperature
Figure 10. Relative variation of critical rate of
decrease of main current versus
junction temperature
I
, I [T ] / I , I [T = 25 °C]
dV / dt [T ] / dV / dt [T = 125 °C]
H
L
j
H L j
j
j
2.5
2.0
1.5
1.0
0.5
0.0
7
6
5
4
3
2
1
0
V
= V = 402 V
R
D
1
I
L
I
H
T (°C)
j
T (°C)
j
-50
-25
0
25
50
75
100
125
25
50
75
100
125
Figure 11. Relative variation of critical rate of Figure 12. Leakage current versus junction
decrease of main current versus
junction temperature
temperature for different values of
blocking voltage (typical values)
(dl / dt) [T ] / (dl / dt) [T = 125 °C]
I
/I
DRM RRM
[T ;V
/ V ] / I /I
DRM RRM DRM RRM
c
j
c
j
j
8
7
6
5
4
3
2
1
0
[T = 125 °C; 700 V]
j
1.0E+00
1.0E-01
1.0E-02
1.0E-03
V
= V
= 600 V
RRM
DRM
V
= V
= 400 V
RRM
DRM
V
= V
= 200 V
RRM
DRM
T (°C)
j
25
50
75
100
125
25
50
75
100
125
Doc ID 16488 Rev 2
5/9
Ordering information scheme
T16T
2
Ordering information scheme
Figure 13. Ordering information scheme
T
16
10
T
-
6
I
TRIAC
Current
16 = 16 A
Sensitivity
10 = 10 mA
20 = 20 mA
35 = 35 mA
Application specific
Voltage
6 = 600 V
Package
I = TO-220AB-Ins.
6/9
Doc ID 16488 Rev 2
T16T
Package mechanical data
3
Package mechanical data
●
●
Epoxy meets UL94, V0
Lead-free packages
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
®
ECOPACK is an ST trademark.
Table 6.
TO-220AB insulated dimensions
Dimensions
Millimeters
Min. Typ. Max. Min. Typ. Max.
Ref.
Inches
A
15.20
15.90 0.598
0.625
a1
3.75
0.147
C
B
a2 13.00
10.00
14.00 0.511
10.40 0.393
0.88 0.024
1.32 0.048
4.60 0.173
0.70 0.019
2.72 0.094
2.70 0.094
6.60 0.244
3.85 0.147
0.551
0.409
0.034
0.051
0.181
0.027
0.107
0.106
0.259
0.151
Ø I
b2
B
L
F
b1 0.61
b2 1.23
A
I4
C
4.40
l3
c1 0.49
c2 2.40
c2
a1
l2
a2
e
F
2.40
6.20
M
c1
b1
ØI 3.75
e
I4 15.80 16.40 16.80 0.622 0.646 0.661
L
2.65
1.14
1.14
2.95 0.104
1.70 0.044
1.70 0.044
0.116
0.066
0.066
l2
l3
M
2.60
0.102
Doc ID 16488 Rev 2
7/9
Ordering information
T16T
4
Ordering information
Table 7.
Order code
T1610T-6I
Ordering information
Marking
Package
Weight
Base qty Delivery mode
T1610T-6I
T1620T-6I
T1635T-6I
T1620T-6I
T1635T-6I
TO-220AB ins.
2.3 g
50
Tube
5
Revision history
Table 8.
Date
Document revision history
Revision
Changes
03-Dec-2009
18-Jan-2010
1
2
Initial release.
Updated pag.1.
8/9
Doc ID 16488 Rev 2
T16T
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