T1650H-6T -TR [STMICROELECTRONICS]
TRIAC;
| 型号： | T1650H-6T -TR |
| 厂家： | 
ST |
| 描述： | TRIAC 三端双向交流开关 |
| 文件： | 总13页 (文件大小：265K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
T1635H-6I, T1635H-6T, T1635H-6G
T1650H-6I, T1650H-6T, T1650H-6G
Datasheet
16 A - 600 V H-series Snubberless Triac
A2
A1
Features
•
•
•
•
•
•
Medium current Triac
150 °C max. Tj turn-off commutation
G
Low thermal resistance with clip bonding
Very high 3 quadrant commutation capabilities
Packages are RoHS (2002/95/EC) compliant
UL certified (ref. file E81734)
A2
G
G
A2
A2
A1
A1
Application
TO-220AB
TO-220AB Ins.
A2
The 600 V T1635H and T1650H are especially designed to operate in high power
density or universal motor applications such as vacuum cleaner, coffee brewers, and
inrush current limiter for inverter based home appliances.
G
A2
A1
D²PAK
Description
Available in through-hole or surface mount packages, these Triac series are suitable
for general purpose mains power ac switching.
These 20 A Triacs provide a very high switching capability up to junction
temperatures of 150 °C.
The heatsink can be reduced, compared to traditional Triacs, according to the high
performance at given junction temperatures.
By using an internal ceramic pad, the TO-220AB insulated version provide voltage
insulation (rated at 2500 VRMS).
Product status link
T1635H-6I, T1635H-6T, T1635H-6G,
T1650H-6I, T1650H-6T, T1650H-6G
The surface mount D²PAK package enables compact SMD based designs for
automated manufacturing.
Product summary
I
16 A
600 V
T(RMS)
V
/V
DRM RRM
I
35 or 50 mA
GT
DS5310 - Rev 4 - March 2020
For further information contact your local STMicroelectronics sales office.
www.st.com
T1635H-6I, T1635H-6T, T1635H-6G, T1650H-6I, T1650H-6T, T1650H-6G
Characteristics
1
Characteristics
Table 1. Absolute maximum ratings (limiting values)
Parameter
Symbol
Value
Unit
2
D PAK,
T = 130 °C
c
TO-220AB
TO-220AB Ins.
f = 50 Hz
I
RMS on-state current (full sine wave)
16
A
T(RMS)
T = 113 °C
c
t = 20 ms
160
168
169
Non repetitive surge peak on-state current (full cycle,
T initial = 25 °C)
j
I
A
TSM
f = 60 Hz
t = 16.7 ms
2
2
2
t = 10 ms
p
I t
I t value for fusing
A s
Critical rate of rise of on-state current, I = 2 x I , tr
≤ 100 ns, f = 100 Hz
G
GT
T = 150 °C
dl/dt
f = 120 Hz
100
A/µs
V
j
V
/
V
/V
DSM
DRM RRM
t = 10 ms
p
T = 25 °C
j
Non Repetitive peak off-state voltage
V
+100
RSM
I
t = 20 µs
p
T = 150 °C
Peak gate current
4
1
A
GM
j
P
T = 150 °C
j
Average gate power dissipation
Storage temperature range
Operating junction temperature range
W
°C
°C
G(AV)
T
-40 to +150
-40 to +150
stg
T
j
Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Value
Symbol
Test conditions
Quadrants
Unit
T1635H
T1650H
(1)
I
Max.
Max.
35
50
mA
V
GT
V
= 12 V, R = 33 Ω
I - II - III
D
L
V
1.0
GT
V
V
I
= V
, R = 3.3 kΩ
I - II - III
I - III
II
Min.
Max.
Max.
Max.
0.15
V
GD
D
DRM
L
50
80
35
90
110
75
I
= 1.2 x I
GT
mA
L
G
(2)
I = 500 mA, gate open
T
I
mA
V/µs
A/ms
H
dV/dt (2)
V
= 2/3 x V
, gate open
T = 150 °C
j
Min.
Min.
1000
21
1500
28
D
DRM
(dl/dt)c (2)
T = 150 °C
j
Without snubber
1. Minimum I is guaranteed at 20% of I max.
GT
GT
2. For both polarities of A2 referenced to A1.
DS5310 - Rev 4
page 2/13
T1635H-6I, T1635H-6T, T1635H-6G, T1650H-6I, T1650H-6T, T1650H-6G
Characteristics
Table 3. Static characteristics
Symbol
Test conditions
Value Unit
(1)
I
= 23 A, t = 380 µs
T = 25 °C
V
Max.
1.5
V
V
TM
p
j
T
(1)
V
T = 150 °C
j
Threshold voltage
Dynamic resistance
Max. 0.80
TO
(1)
R
T = 150 °C
j
Max.
Max.
23
5
mΩ
µA
mA
D
T = 25 °C
j
V
= V
RRM
DRM
T = 150°C
j
4.1
3.5
3.0
I
/
DRM
(2)
I
RRM
V
V
= V = 400 V, peak voltage
T = 150 °C
j
Max.
Max.
D
R
mA
= V = 200 V, peak voltage
T = 150 °C
j
D
R
1. For both polarities of A2 referenced to A1.
2. t = 380 μs
p
Table 4. Thermal resistance
Parameter
Symbol
Value Unit
2
D PAK,
1.15
TO-220AB
R
Junction to case (AC)
°C/W
th(j-c)
th(j-a)
TO-220AB Ins.
2.1
2
D PAK,
2
Junction to ambient (S = 2 cm )
45
cu
TO-220AB
R
°C/W
Junction to ambient
TO-220AB Ins.
60
DS5310 - Rev 4
page 3/13
T1635H-6I, T1635H-6T, T1635H-6G, T1650H-6I, T1650H-6T, T1650H-6G
Characteristics (curves)
1.1
Characteristics (curves)
Figure 1. Maximum power dissipation versus on-state
RMS current
Figure 2. On-state RMS current versus case temperature
IT(RMS)(A)
P(W)
18
18
16
14
12
10
8
D²PAK
TO-220AB
=180 °
16
TO220AB ins
14
12
10
8
6
6
4
4
180°
2
TC(°C)
75
2
IT(RMS)(A)
0
0
0
25
50
100
125
150
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16
Figure 3. On-state RMS current versus ambient
temperature
Figure 4. Variation of thermal impedance versus pulse
duration
I
T(RMS)(A)
K=[Zth /Rth]
1.0E+00
1.0E-01
1.0E-02
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Epoxy printed circuit board FR4,
copper thickness = 35 µm
°
= 180
D²PAK
Zth(j-c)
Zth(j-a)
SCU= 2 cm²
TO220AB ins
TO-220AB
Tamb(°C)
tP(s)
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
0
25
50
75
100
125
150
DS5310 - Rev 4
page 4/13
T1635H-6I, T1635H-6T, T1635H-6G, T1650H-6I, T1650H-6T, T1650H-6G
Characteristics (curves)
Figure 6. Surge peak on-state current versus number of
Figure 5. On-state characteristics (maximum values)
cycles
I
(A)
TM
1000
100
10
I
(A)
TSM
180
160
140
120
100
80
t=20ms
Non repetitive
Tj initial = 25 °C
One cycle
Tj=150 °C
Tj=25 °C
Repetitive
Tc=110 °C
60
40
Tj max. :
Vt0 = 0.80 V
Rd = 23 mΩ
20
VTM(V)
2.0
Number of cycles
1
0
0.0
0.5
1.0
1.5
2.5
3.0
3.5
4.0
4.5
1
10
100
1000
Figure 8. Relative variation of IGT,IH, IL vs junction
temperature (typical values)
Figure 7. Non repetitive surge peak on-state current for a
sinusoidal pulse with width tp < 10 ms
I
(A)
TSM
I
GT, IH, IL [Tj]/ IGT, IH, IL [Tj = 25 °C]
10000
1000
100
2.5
2.0
1.5
1.0
0.5
0.0
dl/dt limitation: 100 A/µs
T initial = 25 °C
j
IGT
I
IH & IL
TSM
Tj(°C)
60
t (ms)
p
10
-40
-20
0
20
40
80
100
120
140
160
0.01
0.10
1.00
10.00
Figure 9. Relative variation of critical rate of decrease of Figure 10. Relative variation of critical rate of decrease of
main current (dI/dt)c versus reapplied (dV/dt)c
main current versus junction temperature
(dI/dt)c [Tj] / (dI/dt)c [Tj = 150°C]
(dI/dt)c [ (dV/dt)c ] / specified (dI/dt)c
typical values
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
8
7
6
5
4
3
2
1
0
Tj(°C)
(dV/dt)C (V/µs)
0.1
1.0
10.0
100.0
25
50
75
100
125
150
DS5310 - Rev 4
page 5/13
T1635H-6I, T1635H-6T, T1635H-6G, T1650H-6I, T1650H-6T, T1650H-6G
Characteristics (curves)
Figure 11. Leakage current versus junction temperature
for different values of blocking voltage (typical values)
Figure 12. Thermal resistance junction to ambient versus
copper surface under tab
IDRM/IRRM(µA)
1.0E+04
Rth(j-a) (°C/W)
80
D²PAK
Epoxy printed circuit board FR4, eCu = 35 µm
V
DRM=VRRM=600 V
70
60
50
40
30
20
1.0E+03
1.0E+02
1.0E+01
1.0E+00
1.0E-01
V
DRM=VRRM=400 V
V
DRM=VRRM=200 V
SCu(cm²)
10
Tj(°C)
100
0
0
5
10
15
20
25
30
35
40
50
75
125
150
DS5310 - Rev 4
page 6/13
T1635H-6I, T1635H-6T, T1635H-6G, T1650H-6I, T1650H-6T, T1650H-6G
Package information
2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
2.1
TO-220AB package information
•
•
•
•
Molding compound resin is halogen-free and meets flammability standard UL94 level 0
Lead-free package leads finishing
ECOPACK2 compliant
Recommended torque: 0.4 to 0.6 N.m
Figure 13. TO-220AB package outline
C
B
I
b2
Resin gate 0.5 mm
max. protusion(1)
L
F
A
I4
l3
l2
c2
a1
a2
M
c1
Resin gate 0.5 mm
max. protusion(1)
b1
e
(1)Resin gate position accepted in one of the two positions or in the symmetrical opposites.
DS5310 - Rev 4
page 7/13
T1635H-6I, T1635H-6T, T1635H-6G, T1650H-6I, T1650H-6T, T1650H-6G
TO-220AB package information
Table 5. TO-220AB package mechanical data
Dimensions
Inches(1)
Typ.
Ref.
Millimeters
Typ.
Min.
Max.
Min.
Max.
A
a1
a2
B
15.20
15.90
0.5984
0.6260
3.75
0.1476
13.00
10.00
0.61
1.23
4.40
0.49
2.40
2.40
6.20
3.73
2.65
1.14
1.14
15.80
14.00
10.40
0.88
1.32
4.60
0.70
2.72
2.70
6.60
3.88
2.95
1.70
1.70
16.80
0.5118
0.3937
0.0240
0.0484
0.1732
0.0193
0.0945
0.0945
0.2441
0.1469
0.1043
0.0449
0.0449
0.6220
0.5512
0.4094
0.0346
0.0520
0.1811
0.0276
0.1071
0.1063
0.2598
0.1528
0.1161
0.0669
0.0669
0.6614
b1
b2
C
c1
c2
e
F
I
L
I2
I3
I4
M
16.40
2.6
0.6457
0.1024
1. Inch dimensions are for reference only.
DS5310 - Rev 4
page 8/13
T1635H-6I, T1635H-6T, T1635H-6G, T1650H-6I, T1650H-6T, T1650H-6G
D²PAK package information
2.2
D²PAK package information
Figure 14. D²PAK package outline
A
E
E1
E2
c2
1
2
3
b2
e
Max resin gate protrusion: 0.5 mm (1)
b
G
A1
A2
A3
R
Gauge Plane
(1) Resin gate is accepted in each of position shown on the drawing, or their symmetrical.
DS5310 - Rev 4
page 9/13
T1635H-6I, T1635H-6T, T1635H-6G, T1650H-6I, T1650H-6T, T1650H-6G
D²PAK package information
Table 6. D²PAK package mechanical data
Dimensions
Inches(1)
Typ.
Ref.
Millimeters
Typ.
Min.
4.30
2.49
0.03
Max.
4.60
2.69
0.23
Min.
Max.
A
A1
A2
A3
b
0.1693
0.0980
0.0012
0.1811
0.1059
0.0091
0.25
0.0098
0.70
1.25
0.45
1.21
8.95
7.50
1.30
2.54
10.00
8.30
6.85
4.88
15
0.93
1.7
0.0276
0.0492
0.0177
0.0476
0.3524
0.2953
0.0512
0.1
0.0366
0.0669
0.0236
0.0535
0.3681
0.3150
0.0669
b2
c
0.60
1.36
9.35
8.00
1.70
c2
D
D1
D2
e
E
10.28
8.70
7.25
5.28
15.85
2.28
1.40
1.75
0.3937
0.3268
0.2697
0.1921
0.5906
0.0701
0.0500
0.0551
0.4047
0.3425
0.2854
0.2079
0.6240
0.0898
0.0551
0.0689
E1
E2
G
H
L
1.78
1.27
1.40
L2
L3
R
0.40
0.0157
V2
0°
8°
0°
8°
1. Dimensions in inches are given for reference only
Figure 15. D²PAK recommended footprint (dimensions are in mm)
16.90
10.30
5.08
1.30
3.70
8.90
DS5310 - Rev 4
page 10/13
T1635H-6I, T1635H-6T, T1635H-6G, T1650H-6I, T1650H-6T, T1650H-6G
Ordering information
3
Ordering information
Figure 16. Ordering information scheme
T 16 xx H - 6 y -TR
Triac series
Current
16 = 16 A
Sensitivity
35 = 35 mA
50 = 50 mA
High temperature
Voltage
6 = 600 V
Package
G = D²PAK
T = TO-220AB
I = TO-220AB Ins.
Packing
Blank = Tube (D²PAK,TO-220AB)
-TR = Tape and reel (D²PAK)
Table 7. Ordering information
Order code
T16xxH-6G
T16xxH-6G-TR
T16xxH-6T
Marking
Package
Weight
Base qty.
50
Delivery mode
Tube
T16xxH 6G
D²PAK
1.5 g
1000
50
Tape and reel 13"
Tube
T16xxH 6T
T16xxH 6I
TO-220AB
2.3 g
2.3 g
T16xxH-6I
TO-220AB Ins.
50
Tube
DS5310 - Rev 4
page 11/13
T1635H-6I, T1635H-6T, T1635H-6G, T1650H-6I, T1650H-6T, T1650H-6G
Revision history
Table 8. Document revision history
Date
Version
Changes
29-May-2007
20-Sep-2011
31-Jan-2014
1
2
3
First issue.
Updated: Features, Description and Figure 2.
Updated Figure 2, Figure 3, Figure 4, Table 2 and Table 5.
Updated Table 1. Absolute maximum ratings (limiting values) and
Figure 3. On-state RMS current versus ambient temperature.
23-Mar-2020
4
DS5310 - Rev 4
page 12/13
T1635H-6I, T1635H-6T, T1635H-6G, T1650H-6I, T1650H-6T, T1650H-6G
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST
products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service
names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2020 STMicroelectronics – All rights reserved
DS5310 - Rev 4
page 13/13
相关型号：
T1651N60TOH
Silicon Controlled Rectifier, 2620A I(T)RMS, 1650000mA I(T), 6000V V(DRM), 6000V V(RRM), 1 Element
INFINEON
T1651N65TOH
Silicon Controlled Rectifier, 2620A I(T)RMS, 1650000mA I(T), 6500V V(DRM), 6500V V(RRM), 1 Element,
INFINEON
T1651N70TOH
Silicon Controlled Rectifier, 2620A I(T)RMS, 1650000mA I(T), 7000V V(DRM), 7000V V(RRM), 1 Element,
INFINEON
©2020 ICPDF网 联系我们和版权申明