TDA7296AV [STMICROELECTRONICS]
70V - 60W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY; 70V - 60W DMOS音频放大器,具有静音/ ST- BY![TDA7296AV](http://pdffile.icpdf.com/pdf1/p00079/img/icpdf/TDA7296A_418465_icpdf.jpg)
型号: | TDA7296AV |
厂家: | ![]() |
描述: | 70V - 60W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY |
文件: | 总13页 (文件大小:243K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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TDA7296A
70V - 60W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY
PRODUCT PREVIEW
VERY HIGH OPERATING VOLTAGE RANGE
(±35V)
MULTIPOWER BCD TECHNOLOGY
DMOS POWER STAGE
HIGH OUTPUT POWER (UP TO 60W MUSIC
POWER)
MUTING/STAND-BY FUNCTIONS
NO SWITCH ON/OFF NOISE
NO BOUCHEROT CELLS
VERYLOW DISTORTION
VERYLOW NOISE
Multiwatt 15
ORDERING NUMBER: TDA7296AV
SHORT CIRCUIT PROTECTION
THERMAL SHUTDOWN
CLIPPING DETECTION OUTPUT
even in presence of poor supply regulation, with
high Supply Voltage Rejection.
DESCRIPTION
The built in muting function with turn on delay
simplifies the remote operation avoiding switching
on-off noises.
The device provides a circuit for the detection of
clipping in the output stages. The output, on open
collector, is able to drive system with automatic
level control.
The TDA7296A is a monolithic integrated circuit
in Multiwatt15 package, intended for use as audio
class AB amplifier in Hi-Fi field applications
(Home Stereo, self powered loudspeakers, Top-
class TV). Thanks to the wide voltage range and
to the high out current capability it is able to sup-
ply the highest power into both 4Ω and 8Ω loads
Figure 1: Typical Application and Test Circuit
C7 100nF
+Vs C6 1000µF
R3 22K
+Vs
7
+PWVs
13
C2
22µF
R2
680Ω
IN-
2
3
-
14
OUT
C1 470nF
IN+
+
C5
22µF
R1 22K
CD
6
5
IN+MUTE
4
BOOTSTRAP
R5 10K MUTE
STBY
10
9
+5V
VM
MUTE
STBY
1
THERMAL
SHUTDOWN
S/C
PROTECTION
15
-PWVs
VSTBY
R4 22K
8
STBY-GND
-Vs
C3 10µF
C4 10µF
C9 100nF
C8 1000µF
D96AU494
-Vs
June 1996
1/13
This is preliminary information on a new product now in development. Details are subject to change without notice.
TDA7296A
PIN CONNECTION (Topview)
15
14
13
12
11
10
9
-VS (POWER)
OUT
+VS (POWER)
N.C.
N.C.
MUTE
STAND-BY
-VS (SIGNAL)
+VS (SIGNAL)
BOOTSTRAP
CD
8
7
6
5
4
SVR
3
NON INVERTING INPUT
INVERTING INPUT
STAND-BY GND
2
1
D96AU495
BLOCK DIAGRAM
BOOTSTRAP
+VS
+
-
+
BOOTSTRAP
IN+
IN-
OUTPUT
CD
CD
+
-
+
-VS
BIPOLAR
TRANSCONDUCTANCE
INPUT STAGE
MOS GAIN &
LEVEL SHIFTING
STAGE
MOS OUTPUT STAGE
SHORT CIRCUIT
PROTECTION
D96AU496
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
VS
IO
Supply Voltage
35
5
±
Output Peak Current
A
Ptot
Power Dissipation Tcase = 70°C
50
W
Top
Operating Ambient Temperature Range
Storage and Junction Temperature
0 to 70
150
C
C
°
°
Tstg, Tj
2/13
TDA7296A
THERMAL DATA
Symbol
Description
Thermal Resistance Junction-case
Value
1.5
Unit
C/W
Rth j-case
Max
°
ELECTRICAL CHARACTERISTICS
(Refer to the Test Circuit VS = ±24V, RL = 8Ω, GV = 30dB;
Rg = 50 Ω; Tamb = 25°C, f = 1 kHz; unless otherwise specified.
Symbol
VS
Parameter
Operating Supply Range
Quiescent Current
Test Condition
Min.
±10
20
Typ.
Max.
±35
60
Unit
V
Iq
30
mA
nA
Ib
Input Bias Current
500
+10
+100
VOS
IOS
Input Offset Voltage
mV
nA
Input Offset Current
PO
RMS Continuous Output Power
d = 0.5%:
V = 24V, R = 8
27
27
27
30
30
30
W
W
W
±
Ω
S
L
VS = ± 21V, RL = 6Ω
ςS = ± 18V, RL = 4Ω
Music Power (RMS) (*)
d = 10%;
t = 1s
R = 8 ; V = 29V
60
60
60
W
W
W
∆
Ω
Ω
±
L
S
RL = 6
; VS = ±24V
R = 4 ; V = 22V
Ω
±
L
S
d
Total Harmonic Distortion (**)
P
P
O = 5W; f = 1kHz
O = 0.1to 20W; f = 20Hz to 20kHz
0.005
%
%
0.1
0.1
V = 18V, R = 4
Ω:
P
P
±
S
L
O = 5W; f = 1kHz
O = 0.1to 20W; f = 20Hz to 20kHz
0.01
%
%
SR
GV
GV
eN
Slew Rate
7
10
80
30
V/µs
dB
Open Loop Voltage Gain
Closed Loop Voltage Gain
Total Input Noise
24
40
5
dB
A = curve
f = 20Hz to 20kHz
1
2
µV
V
µ
fL, fH
Ri
Frequency Response (-3dB)
Input Resistance
PO = 1W
20Hz to 20kHz
100
60
kΩ
SVR
TS
Supply Voltage Rejection
Thermal Shutdown
f = 100Hz; Vripple = 0.5Vrms
75
dB
145
C
°
STAND-BY FUNCTION (Ref: -VS or GND)
VST on
VST off
Stand-by on Threshold
Stand-by off Threshold
1.5
V
3.5
70
V
ATTst-by Stand-by Attenuation
90
dB
mA
Iq st-by
Quiescent Current @ Stand-by
1
3
MUTE FUNCTION (Ref: -VS or GND)
VMon
VMoff
Mute on Threshold
Mute off Threshold
1.5
V
V
3.5
60
ATTmute Mute AttenuatIon
80
dB
%
DC Off
Clipping detector OFF.
CD output Duty Cycle
THD = 1%
TBD
DC On
Clipping detector On.
CD output Duty Cycle
THD = 10%
TBD
%
Note (*):
MUSIC POWER is the maximal power which the amplifieris capableof producing across the rated load resistance (regardless of non linearity)
1 sec after the application of a sinusoidal input signal of frequency 1KHz.
Note (**): Tested with optimized Application Board (see fig. 2)
3/13
TDA7296A
Figure 2:
P.C.B. and components layout of the circuit of figure 1. (1:1 scale)
TDA7296A
Note:
The Stand-by and Mute functions can be referred either to GND or -VS.
On the P.C.B. is possible to set both the configuration through the jumper J1.
4/13
TDA7296A
APPLICATION SUGGESTIONS (seeTest and Application Circuits of the Fig. 1)
The recommended values of the external components are those shown on the application circuit of Fig-
ure 1. Different values can be used; the following table can help the designer.
LARGER THAN
SUGGESTED
SMALLER THAN
SUGGESTED
COMPONENTS
SUGGESTED VALUE
PURPOSE
R1 (*)
22k
INPUT RESISTANCE
INCREASE INPUT
IMPRDANCE
DECREASE INPUT
IMPEDANCE
R2
R3 (*)
R4
680
CLOSED LOOP GAIN DECREASE OF GAIN INCREASE OF GAIN
SET TO 30dB (**)
Ω
22k
22k
INCREASE OF GAIN DECREASE OF GAIN
ST-BY TIME
CONSTANT
LARGER ST-BY
ON/OFF TIME
SMALLER ST-BY
ON/OFF TIME;
POP NOISE
R5
C1
10k
MUTE TIME
CONSTANT
LARGER MUTE
ON/OFF TIME
SMALLER MUTE
ON/OFF TIME
0.47 F
INPUT DC
DECOUPLING
HIGHER LOW
FREQUENCY
CUTOFF
µ
C2
22µF
FEEDBACK DC
DECOUPLING
HIGHER LOW
FREQUENCY
CUTOFF
C3
C4
10 F
MUTE TIME
CONSTANT
LARGER MUTE
ON/OFF TIME
SMALLER MUTE
ON/OFF TIME
µ
10µF
ST-BY TIME
CONSTANT
LARGER ST-BY
ON/OFF TIME
SMALLER ST-BY
ON/OFF TIME;
POP NOISE
C5
22 F
µ
BOOTSTRAPPING
SIGNAL
DEGRADATION AT
LOW FREQUENCY
C6, C8
1000 F
SUPPLY VOLTAGE
BYPASS
DANGER OF
OSCILLATION
µ
C7, C9
0.1 F
SUPPLY VOLTAGE
BYPASS
DANGER OF
OSCILLATION
µ
(*) R1 = R3 FOR POP OPTIMIZATION
(**) CLOSED LOOP GAIN HAS TO BE 24dB
≥
5/13
TDA7296A
TYPICAL CHARACTERISTICS
(Application Circuit of fig 1 unless otherwise specified)
Figure 3:
Figure 4:
Distortion vs. Output Power
Output Power vs. Supply Voltage.
Figure 5: Output Power vs. Supply Voltage
Figure 6: Distortion vs. Output Power
Figure 8: Distortion vs. Frequency
Figure 7: Distortion vs. Frequency
6/13
TDA7296A
TYPICAL CHARACTERISTICS (continued)
Figure 9:
Figure10:
SupplyVoltageRejectionvs.Frequency
QuiescentCurrent vs. Supply Voltage
Figure 11:
MuteAttenuationvs. Vpin10
Figure 12: St-byAttenuation vs. Vpin9
Figure 14:
PowerDissipation vs. Output Power
Figure 13: Power Dissipation vs. OutputPower
7/13
TDA7296A
monic distortion and good behaviour over fre-
quency response; moreover, an accurate control
of quiescent current is required.
A local linearizing feedback, provided by differen-
tial amplifier A, is used to fullfil the above require-
ments, allowing a simple and effective quiescent
current setting.
Proper biasing of the power output transistors
alone is however not enough to guarantee the ab-
sence of crossover distortion.
While a linearization of the DC transfer charac-
teristic of the stage is obtained, the dynamic be-
haviour of the system must be taken into account.
INTRODUCTION
In consumer electronics, an increasing demand
has arisen for very high power monolithic audio
amplifiers able to match, with a low cost the per-
formance obtained from the best discrete de-
signs.
The task of realizing this linear integrated circuit
in conventional bipolar technology is made ex-
tremely difficult by the occurence of 2nd break-
down phenomenon. It limits the safe operating
area (SOA) of the power devices, and as a con-
sequence, the maximum attainable output power,
especially in presence of highly reactive loads.
Moreover, full exploitation of the SOA translates
into a substantial increase in circuit and layout
complexity due to the need for sophisticated pro-
tection circuits.
To overcome these substantial drawbacks, the
use of power MOS devices, which are immune
from secondarybreakdown is highly desirable.
A significant aid in keeping the distortion contrib-
uted by the final stage as low as possible is pro-
vided by the compensation scheme, which ex-
ploits the direct connection of the Miller capacitor
at the amplifier’s output to introduce a local AC
feedback path enclosing the output stage itself.
2) Protections
The device described has therefore been devel-
oped in a mixed bipolar-MOS high voltage tech-
nology called BCD 80.
In designing a power IC, particular attention must
be reserved to the circuits devoted to protection
of the device from short circuit or overload condi-
tions.
1) Output Stage
Due to the absence of the 2nd breakdown phe-
nomenon, the SOA of the power DMOS transis-
tors is delimited only by a maximum dissipation
curve dependent on the duration of the applied
stimulus.
In order to fully exploit the capabilities of the
power transistors, the protection scheme imple-
mented in this device combines a conventional
SOA protection circuit with a novel local tempera-
ture sensing technique which ” dynamically” con-
trols the maximumdissipation.
The main design task one is confrontedwith while
developing an integrated circuit as a power op-
erational amplifier, independently of the technol-
ogy used, is that of realising the output stage.
The solution shown as a principle schematic by
Fig 15 represents the DMOS unity-gain output
buffer of the TDA7296A.
This large-signal, high-power buffer must be ca-
pable of handling extremely high current and volt-
age levels while maintaining acceptably low har-
Figure 15: PrincipleSchematic of a DMOS unity-gain buffer.
8/13
TDA7296A
Figure 16: Turn ON/OFF SuggestedSequence
+Vs
(V)
+35
-35
-Vs
V
(mV)
IN
V
ST-BY
5V
5V
PIN #9
(V)
V
MUTE
PIN #10
(V)
I
P
(mA)
V
OUT
(V)
OFF
ST-BY
PLAY
ST-BY
OFF
MUTE
MUTE
D93AU013
Tj = 150 oC).
Full protection against electrostatic discharges on
every pin is included.
In addition to the overload protection described
above, the device features a thermal shutdown
circuit which initially puts the device into a muting
state (@ Tj = 145 oC) and then into stand-by (@
3) Other Features
Figure 17:
SingleSignal ST-BY/MUTE Control
Circuit
The device is provided with both stand-by and
mute functions, independently driven by two
CMOS logic compatible input pins.
The circuits dedicated to the switching on and off
of the amplifier have been carefully optimized to
avoid any kind of uncontrolledaudible transient at
the output.
The sequence that we recommend during the
ON/OFF transients is shown by Figure 16.
MUTE
STBY
20K
30K
MUTE/
ST-BY
10K
The application of figure 17 shows the possibility
of using only one command for both st-by and
mute functions. On both the pins, the maximum
applicable range corresponds to the operating
supply voltage.
10µF
10µF
1N4148
D93AU014
9/13
TDA7296A
4) Clipping Detector Output
BRIDGE APPLICATION
The TDA7296A is equipped with an internal cir-
cuit able to detect the output stage saturation pro-
viding a proper current sinking into on open col-
lector output (pin 5) when a certain distortion level
is reachedat output.
This particular function allows gain compression
facility whenever the amplifier is overdriven, thus
obtaining high quality sound all listening levels.
Another application suggestion is the BRIDGE
configuration, where two TDA7296A are used, as
shown by the schematic diagram of figure 19.
In this application, the value of the load must not
be lower than 8 Ohm for dissipation and current
capability reasons.
A suitable field of application includes HI-FI/TV
subwoofersrealizations.
The main advantagesoffered by this solution are:
Figure 18:
Clipping Detector Output Waveform
- High power performanceswith limited supply
voltage level.
VO
- Considerablyhigh output power even with high
load values (i.e. 16 Ohm).
OUTPUT
SIGNAL
The characteristics shown by figures 21 and 22,
measured with loads respectively 8 Ohm and 16
Ohm.
With Rl= 8 Ohm, Vs = ±18V the maximum output
power obtainable is 60W, while with Rl=16 Ohm,
Vs = ±24V the maximumPout is 60W.
ICLIP
S96AU498
t
Figure 19: Bridge Application Circuit
+Vs
0.22µF
2200µF
7
13
6
3
22µF
22K
Vi
+
-
14
0.56µF
22K
1
4
2
680
ST-BY/MUTE
20K
10
9
15
8
22K
22µF
-Vs
0.22µF
2200µF
1N4148
9
15
8
10
3
10K
30K
22µF
6
22µF
+
-
14
0.56µF
22K
22K
680
1
4
2
7
13
D96AU497
10/13
TDA7296A
Figure 21: Distortion vs. Output Power
Figure 20:
FrequencyResponse of the Bridge
Application
Figure 22: Distortionvs. Output Power
11/13
TDA7296A
MULTIWATT15 PACKAGE MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
5
MIN.
MAX.
0.197
0.104
0.063
A
B
2.65
1.6
C
D
1
0.039
E
0.49
0.66
1.14
17.57
19.6
0.55
0.75
1.4
0.019
0.026
0.045
0.692
0.772
0.022
0.030
0.055
0.705
F
G
1.27
0.050
0.700
G1
H1
H2
L
17.78
17.91
20.2
22.6
22.5
18.1
17.75
10.9
2.9
0.795
0.890
0.886
0.713
0.699
0.429
0.114
0.181
0.209
0.102
0.102
0.152
22.1
22
0.870
0.866
0.695
0.679
0.406
0.104
0.165
0.177
0.075
0.075
0.144
L1
L2
L3
L4
L7
M
17.65
17.25
10.3
2.65
4.2
17.5
10.7
0.689
0.421
4.3
4.6
0.169
0.200
M1
S
4.5
5.08
5.3
1.9
2.6
S1
Dia1
1.9
2.6
3.65
3.85
12/13
TDA7296A
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specification mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-
THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
1996 SGS-THOMSON Microelectronics – Printed in Italy – All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
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13/13
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