TDA7296S [STMICROELECTRONICS]

60V - 60W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY; 60V - 60W DMOS音频放大器,具有静音/ ST- BY
TDA7296S
型号: TDA7296S
厂家: ST    ST
描述:

60V - 60W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY
60V - 60W DMOS音频放大器,具有静音/ ST- BY

音频放大器
文件: 总11页 (文件大小:251K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TDA7296S  
60V - 60W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY  
VERY HIGH OPERATING VOLTAGE RANGE  
(±30V)  
MULTIPOWER BCD TECHNOLOGY  
DMOS POWER STAGE  
HIGH OUTPUT POWER (THD = 10%, UP TO  
60W)  
MUTING/STAND-BY FUNCTIONS  
NO SWITCH ON/OFF NOISE  
VERY LOW DISTORTION  
VERY LOW NOISE  
SHORT CIRCUIT PROTECTION  
Multiwatt15  
ORDERING NUMBER: TDA7296SV  
THERMAL SHUTDOWN  
CLIP DETECTOR  
class TV). Thanks to the wide voltage range and  
MODULARITY (MORE DEVICES CAN BE  
to the high out current capability it is able to sup-  
EASILY CONNECTED IN PARALLEL TO  
ply the highest power into both 4and 8loads.  
DRIVE VERY LOW IMPEDANCES)  
The built in muting function with turn on delay  
simplifies the remote operation avoiding switching  
DESCRIPTION  
on-off noises.  
The TDA7296S is a monolithic integrated circuit  
in Multiwatt15 package, intended for use as audio  
class AB amplifier in Hi-Fi field applications  
(Home Stereo, self powered loudspeakers, Top-  
Parallel mode is made possible by connecting  
more device through of pin11. High output power  
can be delivered to very low impedance loads, so  
optimizing the thermal dissipation of the system.  
Figure 1: Typical Application and Test Circuit  
+Vs  
C7 100nF  
C6 1000µF  
R3 22K  
BUFFER DRIVER  
11  
+Vs  
+PWVs  
13  
C2  
R2  
7
22µF  
680Ω  
IN-  
2
3
-
14  
12  
OUT  
C1 470nF  
IN+  
+
BOOT  
LOADER  
R1 22K  
SGND  
(**)  
4
C5  
22µF  
(*)  
6
5
BOOTSTRAP  
CLIP DET  
VMUTE  
VSTBY  
R5 10K  
MUTE  
STBY  
10  
9
VCLIP  
THERMAL  
SHUTDOWN  
S/C  
PROTECTION  
MUTE  
STBY  
R4 22K  
1
8
-Vs  
15  
STBY-GND  
-PWVs  
C3 10µF  
C4 10µF  
C9 100nF  
C8 1000µF  
D97AU805A  
-Vs  
(*) see Application note  
(**) for SLAVE function  
1/11  
June 2000  
TDA7296S  
PIN CONNECTION (Top view)  
15  
14  
13  
12  
11  
10  
9
-VS (POWER)  
OUT  
+VS (POWER)  
BOOTSTRAP LOADER  
BUFFER DRIVER  
MUTE  
STAND-BY  
8
-VS (SIGNAL)  
7
+VS (SIGNAL)  
6
BOOTSTRAP  
5
CLIP AND SHORT CIRCUIT DETECTOR  
SIGNAL GROUND  
NON INVERTING INPUT  
INVERTING INPUT  
STAND-BY GND  
4
3
2
1
TAB CONNECTED TO PIN 8  
D97AU806  
QUICK REFERENCE DATA  
Symbol  
VS  
Parameter  
Test Conditions  
Min.  
±12  
26  
Typ.  
Max.  
± 30  
40  
Unit  
V
Supply Voltage Operating  
Closed Loop Gain  
Output Power  
GLOOP  
dB  
W
V = 30V; RL = 8 ; THD = 10%  
60  
60  
75  
±
S
Ptot  
VS = ±25V; RL = 4; THD = 10%  
W
SVR  
Supply Voltage Rejection  
dB  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Supply Voltage (No Signal)  
Value  
±35  
60  
Unit  
V
VS  
V1  
VSTAND-BY GND Voltage Referred to -VS (pin 8)  
Input Voltage (inverting) Referred to -VS  
Maximum Differential Inputs  
V
V2  
60  
V
V2 - V3  
V3  
±30  
60  
V
Input Voltage (non inverting) Referred to -VS  
Signal GND Voltage Referred to -VS  
Clip Detector Voltage Referred to -VS  
Bootstrap Voltage Referred to -VS  
Stand-by Voltage Referred to -VS  
Mute Voltage Referred to -VS  
V
V4  
60  
V
V5  
60  
V
V6  
60  
V
V9  
60  
V
V10  
V11  
V12  
IO  
60  
V
Buffer Voltage Referred to -VS  
60  
V
Bootstrap Loader Voltage Referred to -VS  
Output Peak Current  
60  
V
10  
A
Ptot  
Top  
Tstg, Tj  
Power Dissipation Tcase = 70 C  
50  
W
°C  
°C  
°
Operating Ambient Temperature Range  
Storage and Junction Temperature  
0 to 70  
150  
THERMAL DATA  
Symbol  
Description  
Thermal Resistance Junction-case  
Typ  
1
Max  
Unit  
Rth j-case  
1.5  
°C/W  
2/11  
TDA7296S  
ELECTRICAL CHARACTERISTICS (Refer to the Test Circuit VS = ±24V, RL = 8, GV = 30dB;  
Rg = 50 ; Tamb = 25°C, f = 1 kHz; unless otherwise specified).  
Symbol  
VS  
Parameter  
Operating Supply Range  
Quiescent Current  
Test Condition  
Min.  
±10  
20  
Typ.  
Max.  
±30  
60  
Unit  
V
Iq  
30  
mA  
nA  
mV  
nA  
Ib  
Input Bias Current  
500  
±10  
±100  
VOS  
IOS  
Input Offset Voltage  
Input Offset Current  
PO  
RMS Continuous OutputPower  
d = 0.5%:  
VS = ± 24V, RL = 8Ω  
VS = ± 21V, RL = 6Ω  
27  
27  
27  
30  
30  
30  
W
W
W
V = 18V, R = 4  
±
S
L
Music Power (RMS) (*)  
d = 10%;  
t = 1s  
RL = 8  
; VS = ±30V  
; VS = ±24V  
60  
60  
60  
W
W
W
RL = 6  
R = 4 ; V = 23V  
±
L
S
d
Total Harmonic Distortion (**)  
PO = 5W; f = 1kHz  
PO = 0.1 to 20W; f = 20Hz to 20kHz  
0.005  
%
%
0.1  
0.1  
VS = ±18V, RL = 4Ω:  
PO = 5W; f = 1kHz  
PO = 0.1 to 20W; f = 20Hz to 20kHz  
0.01  
%
%
SR  
GV  
GV  
eN  
Slew Rate  
7
10  
80  
30  
V/µs  
dB  
Open Loop Voltage Gain  
Closed Loop Voltage Gain  
Total Input Noise  
24  
40  
5
dB  
A = curve  
f = 20Hz to 20kHz  
1
2
µV  
µV  
fL, fH  
Ri  
Frequency Response (-3dB)  
Input Resistance  
PO = 1W  
20Hz to 20kHz  
100  
60  
kΩ  
SVR  
TS  
Supply Voltage Rejection  
Thermal Shutdown  
f = 100Hz; Vripple = 0.5Vrms  
75  
dB  
150  
C
°
STAND-BY FUNCTION (Ref: -VS or GND)  
VST on  
VST off  
Stand-by on Threshold  
Stand-by off Threshold  
1.5  
V
3.5  
70  
V
ATTst-by Stand-by Attenuation  
90  
dB  
mA  
Iq st-by  
Quiescent Current @ Stand-by  
1
3
MUTE FUNCTION (Ref: -VS or GND)  
VMon  
VMoff  
Mute on Threshold  
Mute off Threshold  
1.5  
V
V
3.5  
60  
ATTmute Mute Attenuation  
80  
dB  
Note (**):  
MUSIC POWER is the maximal power which the amplifier is capable of producing across the rated load resistance (regardless of non linearity)  
1 sec after the application of a sinusoidal input signal of frequency 1KHz.  
Note (**): Tested with optimized Application Board (see fig. 2)  
3/11  
TDA7296S  
Figure 2: Typical ApplicationP.C. Board and ComponentLayout (scale 1:1)  
4/11  
TDA7296S  
APPLICATION SUGGESTIONS (see Test and Application Circuits of the Fig. 1)  
The recommended values of the external components are those shown on the application circuit of Fig-  
ure 1. Different values can be used; the following table can help the designer.  
LARGER THAN  
SUGGESTED  
SMALLER THAN  
SUGGESTED  
COMPONENTS  
SUGGESTED VALUE  
PURPOSE  
R1 (*)  
22k  
INPUT RESISTANCE  
INCREASE INPUT  
IMPEDANCE  
DECREASE INPUT  
IMPEDANCE  
R2  
R3 (*)  
R4  
680  
CLOSED LOOP GAIN DECREASE OF GAIN INCREASE OF GAIN  
SET TO 30dB (**)  
22k  
22k  
INCREASE OF GAIN DECREASE OF GAIN  
ST-BY TIME  
CONSTANT  
LARGER ST-BY  
ON/OFF TIME  
SMALLER ST-BY  
ON/OFF TIME;  
POP NOISE  
R5  
C1  
10k  
MUTE TIME  
CONSTANT  
LARGER MUTE  
ON/OFF TIME  
SMALLER MUTE  
ON/OFF TIME  
0.47 F  
INPUT DC  
DECOUPLING  
HIGHER LOW  
FREQUENCY  
CUTOFF  
µ
C2  
22µF  
FEEDBACK DC  
DECOUPLING  
HIGHER LOW  
FREQUENCY  
CUTOFF  
C3  
C4  
10 F  
MUTE TIME  
CONSTANT  
LARGER MUTE  
ON/OFF TIME  
SMALLER MUTE  
ON/OFF TIME  
µ
10µF  
ST-BY TIME  
CONSTANT  
LARGER ST-BY  
ON/OFF TIME  
SMALLER ST-BY  
ON/OFF TIME;  
POP NOISE  
C5  
22 FXN (***)  
µ
BOOTSTRAPPING  
SIGNAL  
DEGRADATION AT  
LOW FREQUENCY  
C6, C8  
C7, C9  
1000µF  
0.1µF  
SUPPLY VOLTAGE  
BYPASS  
SUPPLY VOLTAGE  
BYPASS  
DANGER OF  
OSCILLATION  
(*) R1 = R3 for pop optimization  
(**) Closed Loop Gain has to be 26dB  
(***) Multiply this value for the number of modular part connected  
Slave function: pin 4 (Ref to pin 8 -VS)  
Note:  
If in the application, the speakers are connected  
via long wires, it is a good rule to add between  
the output and GND, a Boucherot Cell, in order to  
avoid dangerous spurious oscillations when the  
speakersterminal are shorted.  
MASTER  
-VS +3V  
UNDEFINED  
-VS +1V  
The suggested Boucherot Resistor is 3.9/2W  
and the capacitor is 1µF.  
SLAVE  
-VS  
D98AU821  
5/11  
TDA7296S  
INTRODUCTION  
A local linearizing feedback, provided by differen-  
tial amplifier A, is used to fullfil the above require-  
ments, allowing a simple and effective quiescent  
current setting.  
Proper biasing of the power output transistors  
alone is however not enough to guaranteethe ab-  
sence of crossover distortion.  
While a linearization of the DC transfer charac-  
teristic of the stage is obtained, the dynamic be-  
haviour of the system must be taken into account.  
A significant aid in keeping the distortion contrib-  
uted by the final stage as low as possible is pro-  
vided by the compensation scheme, which ex-  
ploits the direct connection of the Miller capacitor  
at the amplifier’s output to introduce a local AC  
feedbackpath enclosing the output stage itself.  
In consumer electronics, an increasing demand  
has arisen for very high power monolithic audio  
amplifiers able to match, with a low cost, the per-  
formance obtained from the best discrete de-  
signs.  
The task of realizing this linear integrated circuit  
in conventional bipolar technology is made ex-  
tremely difficult by the occurence of 2nd break-  
down phoenomenon. It limits the safe operating  
area (SOA) of the power devices, and, as a con-  
sequence, the maximum attainable output power,  
especiallyin presenceof highly reactive loads.  
Moreover, full exploitation of the SOA translates  
into a substantial increase in circuit and layout  
complexity due to the need of sophisticated pro-  
tection circuits.  
To overcome these substantial drawbacks, the  
use of power MOS devices, which are immune  
from secondarybreakdownis highly desirable.  
2) Protections  
In designing a power IC, particular attention must  
be reserved to the circuits devoted to protection  
of the device from short circuit or overload condi-  
tions.  
1) Output Stage  
The main design task in developping a power op-  
erational amplifier, independently of the technol-  
ogy used, is that of realization of the output stage.  
The solution shown as a principle shematic by  
Fig3 represents the DMOS unity - gain output  
buffer of the TDA7296S.  
This large-signal, high-power buffer must be ca-  
pable of handling extremely high current and volt-  
age levels while maintaining acceptably low har-  
monic distortion and good behaviour over  
frequency response; moreover, an accurate con-  
trol of quiescent current is required.  
Due to the absence of the 2nd breakdown phe-  
nomenon, the SOA of the power DMOS transis-  
tors is delimited only by a maximum dissipation  
curve dependent on the duration of the applied  
stimulus.  
In order to fully exploit the capabilities of the  
power transistors, the protection scheme imple-  
mented in this device combines a conventional  
SOA protection circuit with a novel local tempera-  
ture sensing technique which ” dynamically” con-  
trols the maximum dissipation.  
In addition to the overload protection described  
Figure 3: Principle Schematic of a DMOS unity-gain buffer.  
6/11  
TDA7296S  
Figure 4: Turn ON/OFF Suggested Sequence  
+Vs  
(V)  
+40  
-40  
-Vs  
V
(mV)  
IN  
V
ST-BY  
5V  
5V  
PIN #9  
(V)  
V
MUTE  
PIN #10  
(V)  
I
Q
(mA)  
V
OUT  
(V)  
OFF  
ST-BY  
PLAY  
ST-BY  
OFF  
MUTE  
MUTE  
D98AU817  
above, the device features a thermal shutdown  
avoid any kind of uncontrolled audible transient at  
the output.  
circuit which initially puts the device into a muting  
o
state (@ Tj = 150 C) and then into stand-by (@  
The sequence that we recommend during the  
ON/OFF transients is shown by Figure 4.  
The application of figure 5 shows the possibility of  
using only one command for both st-by and mute  
functions. On both the pins, the maximum appli-  
cable range corresponds to the operating supply  
voltage.  
Tj = 160 oC).  
Full protection against electrostatic discharges on  
every pin is included.  
Figure 5: Single Signal ST-BY/MUTE Control  
Circuit  
APPLICATION INFORMATION  
BRIDGE APPLICATION  
MUTE  
STBY  
Another application suggestion is the BRIDGE  
configuration,where two TDA7296S are used.  
In this application, the value of the load must not  
be lower than 8 Ohm for dissipation and current  
capability reasons.  
20K  
30K  
MUTE/  
ST-BY  
10K  
10µF  
10µF  
1N4148  
A suitable field of application includes HI-FI/TV  
subwoofersrealizations.  
D93AU014  
The main advantagesoffered by this solution are:  
- High power performanceswith limited supply  
voltage level.  
- Considerablyhigh output power even with high  
load values (i.e. 16 Ohm).  
3) Other Features  
The device is provided with both stand-by and  
mute functions, independently driven by two  
CMOS logic compatible input pins.  
With Rl= 8 Ohm, Vs = ±23V the maximum output  
power obtainableis 120W (Music Power)  
The circuits dedicated to the switching on and off  
of the amplifier have been carefully optimized to  
7/11  
TDA7296S  
The slave SGND pin must be tied to the nega-  
tive supply.  
APPLICATION NOTE: (ref. fig. 7)  
The slave ST-BY pin must be connected to  
ST-BY pin.  
The bootstrap lines must be connected to-  
gether and the bootstrap capacitor must be in-  
creased: for N devices the boostrap capacitor  
must be 22µF times N.  
Modular Application (more Devices in Parallel)  
The use of the modular application lets very high  
power be delivered to very low impedance loads.  
The modular application implies one device to act  
as a masterand the others as slaves.  
The slave power stages are driven by the master  
device and work in parallel all together, while the  
input and the gain stages of the slave device are  
disabled, the figure below shows the connections  
required to configure two devices to work to-  
gether.  
The slave Mute and IN-pins must be grounded.  
THE BOOTSTRAP CAPACITOR  
For compatibility purpose with the previous de-  
vices of the family, the boostrap capacitor can be  
connectedboth between the bootstrappin (6) and  
the output pin (14) or between the boostrap pin  
(6) and the bootstraploader pin (12).  
The master chip connections are the same as  
the normal single ones.  
The outputs can be connected together with-  
out the need of any ballast resistance.  
Figure 6: ModularApplication Circuit  
+Vs  
C7 100nF  
C6 1000µF  
R3 22K  
MASTER  
BUFFER  
DRIVER  
+Vs  
+PWVs  
13  
C2  
R2  
7
11  
22µF  
680Ω  
IN-  
2
3
-
14  
12  
OUT  
C1 470nF  
IN+  
C10  
100nF  
+
BOOT  
LOADER  
R1 22K  
R7  
2Ω  
SGND  
MUTE  
STBY  
4
C5  
47µF  
VMUTE  
VSTBY  
R5 10K  
10  
9
6
5
BOOTSTRAP  
MUTE  
THERMAL  
SHUTDOWN  
S/C  
PROTECTION  
CLIP DET  
STBY  
1
R4 22K  
8
-Vs  
15  
STBY-GND  
-PWVs  
C4 10µF  
C9 100nF  
C8 1000µF  
C3 10µF  
-Vs  
+Vs  
C7 100nF  
C6 1000µF  
BUFFER  
DRIVER  
+Vs  
+PWVs  
13  
7
11  
IN-  
2
3
-
14  
12  
OUT  
IN+  
+
BOOT  
LOADER  
SLAVE  
SGND  
MUTE  
4
10  
9
6
5
MUTE  
BOOTSTRAP  
THERMAL  
SHUTDOWN  
S/C  
PROTECTION  
STBY  
STBY  
1
8
-Vs  
15  
STBY-GND  
-PWVs  
C9 100nF  
C8 1000µF  
D97AU808C  
-Vs  
8/11  
TDA7296S  
Figure 7a: Modular Application P.C. Board and ComponentLayout (scale 1:1) (Component SIDE)  
Figure 7b: Modular Application P.C. Board and ComponentLayout (scale 1:1) (Solder SIDE)  
9/11  
TDA7296S  
mm  
inch  
DIM.  
OUTLINE AND  
MIN. TYP. MAX. MIN. TYP. MAX.  
MECHANICAL DATA  
A
B
5
0.197  
0.104  
0.063  
2.65  
1.6  
C
D
1
0.039  
E
0.49  
0.66  
1.02  
0.55 0.019  
0.75 0.026  
0.022  
0.030  
F
G
1.27  
1.52 0.040 0.050 0.060  
G1  
H1  
H2  
L
17.53 17.78 18.03 0.690 0.700 0.710  
19.6  
0.772  
20.2  
0.795  
21.9  
21.7  
22.2  
22.1  
22.5 0.862 0.874 0.886  
22.5 0.854 0.870 0.886  
L1  
L2  
L3  
L4  
L7  
M
17.65  
18.1 0.695  
0.713  
17.25 17.5 17.75 0.679 0.689 0.699  
10.3  
2.65  
4.25  
4.63  
1.9  
10.7  
10.9 0.406 0.421 0.429  
2.9 0.104 0.114  
4.55  
5.08  
4.85 0.167 0.179 0.191  
5.53 0.182 0.200 0.218  
M1  
S
2.6  
2.6  
0.075  
0.075  
0.102  
0.102  
0.152  
S1  
Dia1  
1.9  
Multiwatt15 V  
3.65  
3.85 0.144  
10/11  
TDA7296S  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is  
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are  
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products  
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics  
2000 STMicroelectronics – Printed in Italy – All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
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http://www.st.com  
11/11  

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