TN16 [STMICROELECTRONICS]
16A SCRs; 可控硅16A
| 型号： | TN16 |
| 厂家： | 
ST |
| 描述： | 16A SCRs |
| 文件： | 总7页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TN16 and TYNx16 Series
®
STANDARD
16A SCRs
MAIN FEATURES:
Symbol
A
Value
16
Unit
A
G
I
T(RMS)
K
V
/V
600 to 1000
25
V
DRM RRM
A
I
mA
GT
A
K
A
G
K
DESCRIPTION
A
G
2
D PAK
The TYN / TN16 SCR Series is suitable for
general purpose applications.
Using clip assembly technology, they provide a
superior performance in surge current capabilities.
(TN16-G)
TO-220AB
(TYN)
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
I
RMS on-state current (180° conduction angle)
T(RMS)
Tc = 110°C
16
10
A
A
T
Average on-state current (180° conduction angle)
(AV)
Tc = 110°C
Tj = 25°C
I
Non repetitive surge peak on-state
current
tp = 8.3 ms
tp = 10 ms
200
190
TSM
A
²
²
2
tp = 10 ms
F = 60 Hz
tp = 20 µs
Tj = 25°C
180
50
A S
I t
I t Value for fusing
Critical rate of rise of on-state current
dI/dt
Tj = 125°C
A/µs
I
= 2 x I , tr ≤ 100 ns
G
GT
I
Peak gate current
Tj = 125°C
Tj = 125°C
4
1
A
GM
P
Average gate power dissipation
W
G(AV)
T
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
stg
°C
V
Tj
V
Maximum peak reverse gate voltage
5
RGM
April 2002 - Ed: 4A
1/7
TN16 and TYNx16 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Test Conditions
Value
Unit
I
MIN.
MAX.
MAX.
MIN.
2
GT
mA
25
1.3
V
V
= 12 V
R = 33 Ω
D
L
V
V
GT
V
Tj = 125°C
= V
R = 3.3 kΩ
0.2
40
V
GD
D
DRM
L
I = 500 mA Gate open
MAX.
MAX.
mA
mA
I
T
H
I
I = 1.2 x I
G GT
60
500
1.6
0.77
23
L
dV/dt
V
I
= 67 % V
Gate open
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MIN.
MAX.
MAX.
MAX.
MAX.
V/µs
V
D
DRM
V
= 32 A tp = 380 µs
TM
TM
V
Threshold voltage
V
t0
R
Dynamic resistance
mΩ
µA
mA
d
I
5
DRM
V
= V
RRM
DRM
I
2
RRM
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
R
R
Junction to case (DC)
Junction to ambient (DC)
°C/W
°C/W
1.1
60
45
th(j-c)
TO-220AB
th(j-a)
²
²
S = 1 cm
D PAK
S = Copper surface under tab
PRODUCT SELECTOR
Voltage (xxx)
Package
Part Number
Sensitivity
600 V
800 V
1000 V
²
TN1625-xxxG
TYNx16
X
X
X
X
X
X
25 mA
25 mA
D PAK
TO-220AB
2/7
TN16 and TYNx16 Series
ORDERING INFORMATION
TN 16 25 - 600 G (-TR)
STANDARD
SCR
SERIES
PACKING MODE:
Blank:Tube
-TR:Tape & Reel
PACKAGE:
G: D2PAK
CURRENT: 16A
SENSITIVITY:
25: 25mA
VOLTAGE:
600: 600V
800: 800V
1000: 1000V
TYN 6 16 (RG)
STANDARD
SCR
SERIES
PACKING MODE
Blank: Bulk
RG:Tube
VOLTAGE:
CURRENT: 16A
6: 600V
8: 800V
10: 1000V
OTHER INFORMATION
Part Number
Marking
Weight
Base Quantity
Packing mode
TN1625-x00G
TN1625-x00G-TR
TYNx16
TN1625x00G
TN1625x00G
1.5 g
1.5 g
2.3 g
2.3 g
50
1000
250
50
Tube
Tape & reel
Bulk
TYNx16
TYNx16
TYNx16RG
Tube
Note: x = voltage
3/7
TN16 and TYNx16 Series
Fig. 1: Maximum average power dissipation
Fig. 2-1: Average and D.C. on-state current
versus average on-state current.
versus case temperature.
IT(av)(A)
P(W)
18
16
D.C.
α = 180°
16
14
14
12
10
8
12
α =180°
10
8
6
6
360°
4
4
2
2
α
IT(av)(A)
Tcase(°C)
0
0
0
2
4
6
8
10
12
0
25
50
75
100
125
Fig. 2-2: Average and D.C. on-state current
versus ambient temperature (copper surface
under tab: S = 1 cm² (for D²PAK).
Fig. 3: Relative variation of thermal impedance
versus pulse duration.
IT(av)(A)
K = [Zth/Rth]
4.0
3.5
1.00
Zth(j-c)
D.C.
3.0
2.5
α = 180°
0.10
2.0
Zth(j-a)
1.5
1.0
0.5
tp(s)
Tamb(°C)
0.01
0.0
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
0
25
50
75
100
125
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature.
Fig. 5: Surge peak on-state current versus
number of cycles.
IGT,IH,IL [Tj] / IGR,IH,IL [Tj = 25 °C]
ITSM(A)
2.5
200
180
2.0
160
140
120
100
80
tp = 10ms
One cycle
IGT
Non repetitive
Tj initial = 25°C
1.5
IH & IL
Repetitive
Tcase = 110 °C
1.0
60
0.5
40
20
0
Tj(°C)
Number of cycles
0.0
-40 -20
0
20
40
60
80 100 120 140
1
10
100
1000
4/7
TN16 and TYNx16 Series
Fig. 6: Non-repetitive surge peak on-state
current for sinusoidal pulse with width
tp < 10 ms, and corresponding value of I²t.
Fig. 7: On-state characteristics (maximum
values).
a
2
2
ITM(A)
ITSM(A),I t(A s)
200
2000
1000
Tj max.:
Tj initial = 25°C
Vto = 0.77V
100
ITSM
Rd = 23mΩ
Tj = Tjmax.
dI/dt
limitattion
I2t
10
100
Tj = 25°C
VTM(V)
tp(ms)
1
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
0.01
0.10
1.00
10.00
Fig. 8: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35 µm) (for
D²PAK).
Rth(j-a) (°C/W)
80
70
60
50
40
30
20
10
0
2
S (cm )
0
4
8
12 16 20 24 28 32 36 40
5/7
TN16 and TYNx16 Series
PACKAGE MECHANICAL DATA
D²PAK (Plastic)
DIMENSIONS
Millimeters
Min. Typ. Max. Min. Typ. Max.
REF.
Inches
A
E
C2
L2
L3
A
A1
A2
B
4.30
2.49
0.03
0.70
1.25
0.45
1.21
8.95
10.00
4.88
15.00
1.27
1.40
4.60 0.169
2.69 0.098
0.23 0.001
0.93 0.027
0.181
0.106
0.009
0.037
D
L
B2
C
1.40
0.048 0.055
A1
0.60 0.017
1.36 0.047
9.35 0.352
10.28 0.393
5.28 0.192
15.85 0.590
1.40 0.050
1.75 0.055
0.024
0.054
0.368
0.405
0.208
0.624
0.055
0.069
C2
D
B2
B
R
C
E
G
G
L
A2
2.0 MIN.
L2
L3
R
FLAT ZONE
0.40
0.016
V2
V2
0°
8°
0°
8°
FOOTPRINT DIMENSIONS (in millimeters)
D²PAK (Plastic)
16.90
10.30
5.08
1.30
3.70
8.90
6/7
TN16 and TYNx16 Series
PACKAGE MECHANICAL DATA
TO-220AB (Plastic)
DIMENSIONS
REF.
Millimeters
Inches
B
C
b2
Min. Typ. Max. Min. Typ. Max.
A
a1
a2
B
15.20
15.90 0.598
0.625
L
3.75
0.147
F
13.00
10.00
0.61
1.23
4.40
0.49
2.40
2.40
6.20
3.75
14.00 0.511
10.40 0.393
0.88 0.024
1.32 0.048
4.60 0.173
0.70 0.019
2.72 0.094
2.70 0.094
6.60 0.244
3.85 0.147
0.551
0.409
0.034
0.051
0.181
0.027
0.107
0.106
0.259
0.151
I
A
b1
b2
C
l4
c1
c2
e
c2
a1
l3
l2
a2
F
I
I4
L
15.80 16.40 16.80 0.622 0.646 0.661
2.65
1.14
1.14
2.95 0.104
1.70 0.044
1.70 0.044
0.116
0.066
0.066
b1
M
l2
l3
M
c1
e
2.60
0.102
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved
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