TN22-1500K [STMICROELECTRONICS]
2A, 400V, ASSYMETRIC SCR;
| 型号： | TN22-1500K |
| 厂家： | 
ST |
| 描述： | 2A, 400V, ASSYMETRIC SCR 栅 栅极 |
| 文件： | 总7页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TN22
STARTLIGHT
FEATURES
VBR :1200 - 1500V and 1000- 1600V versions
IH > 175 mA
IGT < 1.5 mA
SOT 194
(Plastic)
DESCRIPTION
The TN22 is an high performance asymetrical
SCR in high voltage PNPN diffused planar tech-
nology.
K
A
G
Package either in TO220AB, SOT 82 or SOT 194,
these parts are intended for use in electronic
TO220AB
(Plastic)
SOT 82
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
VDRM
Parameter
Value
400
2
Unit
V
Repetitive peak off-state voltage
Tj = 110°C
Tc= 95°C
IT(RMS)
RMS on-state current
A
Full sine ware (180° conductionangle)
IT(AV)
ITSM
Mean on-state current
Tc= 95°C
1.8
22
A
A
Full sine ware (180° conductionangle)
Non repetitivesurge peak on-state current
(Tj initial = 25°C)
tp = 8.3ms
tp = 10ms
tp = 10ms
20
2
I2t
I2t Value for fusing
A2s
dI/dt
Critical rate of rise of on-state current
50
A/µs
IG = 5 mA
dIG /dt = 70 mA/µs.
Tstg
Tj
Storage and operating junction temperature range
- 40 to + 150
- 40 to + 110
°C
°C
Tl
Maximum lead temperature for soldering during 10s at
4.5mm from case
260
April 1995
1/7
TN22
THERMAL RESISTANCES
Symbol
Parameter
Value
60
Unit
Rth(j-a)
Junction to ambient
TO220AB
°C/W
SOT 82 / SOT 194
100
3
Junction to case
Rth(j-c)
°C/W
GATE CHARACTERISTICS (maximum values)
PG (AV)= 300 mW PGM = 2 W (tp = 20 µs) IFGM = 1 A (tp = 20 µs) VRGM = 6V
ELECTRICAL CHARACTERISTICS
Symbol
IGT
Test Conditions
VD=12V (DC) RL=33Ω
Type
Tj= 25°C MAX
Tj= 25°C MAX
Value
1.5
Unit
mA
V
VGT
VD=12V (DC) RL=33Ω
RGK = 1 KΩ
3
IH
VGK = 0V
Tj= 25°C
MIN
175
3.1
0.1
500
mA
V
VTM
ITM= 2A tp= 380µs
VDRM Rated
Tj= 25°C MAX
Tj= 25°C MAX
Tj= 110°C MIN
IDRM
dV/dt
mA
V/µs
Linear slope up to
VD=67%VDRM VGK = 0V
Test Conditions
Suffix
TN22-1500 TN22-1600
Symbol
Unit
VBR
ID= 5mA VGK = 0V
Tj = 25°C
MIN
1200
1500
1000
1600
V
V
MAX
ORDERING INFORMATION
T
N
2
2
-
XXXX
X
THYRISTOR
FAMILY
STARLIGHT
I
MAX
I
MAX
V MAX
BR
1500 : 1500 V
Packages
T(RMS)
GT
2 : 2 A
2 : 1.5 mA
T : TO220AB
D : SOT 82
K : SOT 194
1600 : 1600V
2/7
TN22
This thyristor has been designed for use as a fluo-
rescent tube starter switch.
A pre-heating period during which a heating
current is applied to the cathode heaters.
One or several high voltage striking pulses
across the lamp.
Au electronic starter circuit provides :
BASIC APPLICATION DIAGRAM
INDUCTANCE
BALLAST
STARTER CIRCUIT
220 V
FLUORESCENT
AV
R
TUBE
VOLTAGE
CONTROLER
TN22
(TIMER)
S
PRINCIPLE OF OPERATION
pulse. This overvoltage is clamped by the thyristor
avalanche characteristic(VBR).
1/ Pre-heating
If thelamp is not struck after the first pulse, the sys-
tem starts a new ignition sequence again.
At rest the switch S is opened and when the mains
voltage is applied across the circuit a full wave rec-
tified current flows through the resistor R and the
TN22 gate : At every half-cycle when this current
reaches the gate triggering current (IGT) the thyris-
tor turns on.
3/ Steadystate
When the lamp is on the running voltage is about
150V and the starter switch is in the off-state.
IMPLEMENTATION
When the device is turned-on the heating current,
limited by the ballast choke, flows through the tube
heaters.
The resistor R must be chosen to ensure a proper
triggering in the worst case (minimum operating
temperature) according to the specified gate trig-
gering current and the peak line voltage.
The pre-heatingtime is typically 2 or 3 seconds.
Switch S : This functioncan be realized with a gate
sensitive SCR type : P0130AA...
2/ Pulsing
This component is a low voltage device (< 50V)
and the maximum current sink through this switch
can reach the level of the thyristor holding current.
At the end of the pre-heating phase the switch S is
turned on. At this moment :
If the current through the devices is higher than the
holding current (IH) the thyristor remains on until
the current falls (below IH). Then the thyristor turns
off.
The pre-heating period can be determined by the
time constant of
a capacitor-resistor circuit
charged by the voltage drop of diodes used in se-
ries in the thyristor cathode.
If thecurrent is equal or lower than the holding cur-
rent the thyristor turns off the instantaneously.
When the thyristor turns off the current flowing
through the ballas choke generates a high voltage
3/7
TN22
Fig.1 : Maximum average power dissipation ver-
sus average on-state current (rectified full sine
wave).
Fig.2 : Correlation between maximum average
power dissipation and maximum allowable tem-
perature (Tamb and Tcase) for different thermal
resistances heatsink + contact.
P
(W)
P
(W)
T(av)
T(av)
6
5
6
5
o
o
o
Rth=8 C/W
Rth=4 C/W
Rth=0 C/W
= 180o
= 120o
= 90o
= 60o
= 30o
o
Rth=12 C/W
4
3
2
1
4
3
2
1
0
= 180o
I
(A)
T(av)
o
Tcase ( C)
0
0
0.2 0.4 0.6 0.8
1.2 1.4 1.6 1.8 2
1
0
10 20 30 40 50 60 70 80 90 100 110
Fig.3 : Average on-state current versus case tem-
perature(rectified full sine wave).
Fig.4 : Thermal transient impedance junction to
ambient versus pulse duration.
I
(A)
Zth(j-a)(oC/W)
1.0E+02
T(av)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
= 180o
1.0E+01
1.0E+00
Tcase ( oC)
tp(S)
1.0E-01
70
0.0 10 20 30 40 50 60
80 90 100 110
1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.
Igt[Tj]
Ih[Tj]
I
(A)
TSM
Igt[Tj=25 o C] Ih[Tj=25 o C]
20
18
16
14
12
10
8
Tj initial = 25oC
F = 50Hz
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Igt
Ih
6
4
2
Number of cycles
10
Tj(oC)
20
0
1
100
1000
-40 -20
0
40
60
80 100 120 140
4/7
TN22
Fig.7 : Non repetitive surge peak on-state current
for a sinusoidal pulse with width : tp ≤ 10ms, and
correspondingvalue of I2t.
Fig.8 : On-statecharacteristics(maximum values).
2
2
I
(A). I t (A s)
V
TM
(V)
TSM
100
10
1
8
7
6
5
4
3
2
1
0
Tj initial = 25oC
o
Tj=110 C
Vto =2.50V
Rt =0.235
I
TSM
Tj=110 oC
Tj=25oC
2
I
t
I
(A)
TM
tp(ms)
0.1
20
1
10
1
10
Fig.9 : Relative variation of holding current versus
gate-cathoderesistance (typical values).
Fig.10 : Maximum allowable RMS current versus
time conduction and initial case temperature
(Package : SOT 82).
Note : Calculation made fot Tj max = 135°C (the
failure mode will be short circuit)
I
H
(mA)
I
(A)
T(rms)
500
100
11
10
9
Tj=25oC
Tc initial = 25oC
8
7
Tc initial = 45oC
6
5
Tc initial = 65oC
10
4
3
2
tp(s)
Rgk(
100
)
1
1
1
0.1
1
10
100
10
1000
5/7
TN22
PACKAGE MECHANICAL DATA
TO220AB(Plastic)
DIMENSIONS
Millimeters Inches
REF.
Min.
10.0
15.2
13
Max.
10.4
15.9
14
Min.
Max.
0.409
0.626
0.551
0.260
A
B
C
D
E
F
0.393
0.598
0.511
0.244
6.2
6.6•
16.4 typ.
0.645 typ.
3.5
2.65
4.4
4.2
2.95
4.6
0.137
0.104
0.173
0.147
0.048
0.165
0.116
0.181
0.151
0.051
G
H
I
3.75
1.23
3.85
1.32
J
K
L
1.27 typ.
0.050 typ.
0.49
2.4
0.70
2.72
5.15
2.70
1.70
0.88
0.019
0.094
0.194
0.094
0.044
0.024
0.027
0.107
0.203
0.106
0.067
0.034
M
N
N1
O
P
4.95
2.40
1.14
0.61
Cooling method : C
Marking : Type number
Weight : 2 g
Recommended torque values : 5.5 m.N.
Maximum torque values : 0.70 m.N.
PACKAGE MECHANICAL DATA
SOT 82 (Plastic)
DIMENSIONS
Millimeters Inches
C
A
REF.
Min.
7.4
Max.
7.8
Min.
0.291
0.413
0.094
0.027
Max.
0.307
0.425
0.106
0.035
B
L
A
B
10.5
2.4
10.8
2.7
C
H
D
0.7
0.9
E
2.2 typ.
0.087 typ.
F
0.49
4.15
0.75
4.65
2.54
0.019
0.163
0.029
0.183
0.100
G
D
E
H (1)
L
M
15.7 typ.
0.618 typ.
F
G
M
1.0
1.3
0.039
0.051
(1) Within this region the cross-section of the leads is
uncontrolled
Marking : Type number
Weight : 0.72 g
6/7
TN22
PACKAGE MECHANICAL DATA
SOT 194 (Plastic)
DIMENSIONS
Millimeters Inches
Min. Max.
REF.
C
A
Min.
7.4
Max.
7.8
A
B
C
D
E
F
G
I
0.291
0.413
0.094
0.027
0.307
0.425
0.106
0.035
10.5
2.4
10.8
2.7
B
O
0.7
0.9
2.2 typ.
0.087 typ.
L
M
0.49
4.15
0.75
4.65
0.019
0.163
0.020
0.183
D
F
E
N
1.3 typ.
0.051 typ.
L
0.1 typ.
4 typ
0.004 typ.
0.158 typ
0.078 typ.
0.236 typ.
45°
G
I
M
N
O
α
2 typ.
6 typ.
45°
Marking : Type number
Weight : 0.68 g
FOOT PRINT
6.7
8.5
3.5
4.5
1.2
1
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized foruse as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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7/7
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