TN815-700B [STMICROELECTRONICS]
SCR’s; SCR的型号: | TN815-700B |
厂家: | ST |
描述: | SCR’s |
文件: | 总5页 (文件大小:77K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
®
TN805/TN815-B
SCR’s
FEATURES
A
ITRMS = 8 A
VDRM = 400 V to 800 V
≤
IGT 5 mA and 15 mA
DESCRIPTION
G
A
The TN805/TN815-B serie of Silicon Controlled
Rectifiers uses a high performance TOPGLASS
PNPN technology.
K
These parts are intended for general purpose
applications using mount technology.
DPAK
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
RMS on-state current
(180 conduction angle)
°
IT(RMS)
Tc= 105 C
8
A
°
IT(AV)
ITSM
Mean on-state current
Tc= 105°C
5
A
A
°
(180 conduction angle)
Non repetitive surge peak on-state current
(Tj initial = 25°C)
tp = 8.3 ms
73
tp = 10 ms
tp = 10ms
70
I2t
I2t Value for fusing
24.5
100
A2s
µ
A/ s
dI/dt
Critical rate of rise of on-state current
µ
dIG /dt = 1 A/ s.
IG = 100 mA
Storage junction temperature range
Operating junction temperature range
°
Tstg
Tj
- 40 to + 150
- 40 to + 125
C
C
°
Tl
Maximum lead temperature for soldering during 10s
260
TN805 or TN815
Symbol
Parameter
Unit
400B
600B
700B
700
800B
VDRM
VRRM
Repetitive peak-off voltage
Tj = 125°C
400
600
800
V
August 1998 - Ed: 1A
1/5
TN805/TN815-B
THERMAL RESISTANCES
Symbol
Parameter
Value
70
Unit
Junction to ambient (S=0.5cm2)
C/W
C/W
°
Rth(j-a)
Rth(j-c)
°
Junction to case for D.C
2.5
GATE CHARACTERISTICS
µ
µ
PG (AV)= 1W PGM = 10 W (tp = 20 s)
IGM = 4 A (tp = 20 s)
VRGM = 5 V
ELECTRICAL CHARACTERISTICS
Value
Symbol
Test Conditions
Type
Unit
TN805
TN815
Ω
Ω
°
µ
A
IGT
VGT
VGD
tgt
VD = 12V (DC) RL= 33
Tj= 25 C
MAX
MAX
5
15
VD = 12V (DC) RL= 33
Tj= 25°C
1.5
0.2
2
V
Ω
°
VD = VDRM RL = 3.3k
Tj= 125 C MIN
V
µ
s
VD = VDRM
IG = 40mA
ITM = 3 x IT(AV)
dIG/dt = 0.5A/us
Tj= 25°C
TYP
IH
IT= 150mA Gate open
IG = 1.2 IGT
Tj= 25°C
MAX
MAX
MAX
MAX
25
25
30
30
mA
mA
V
°
Tj= 25 C
IL
µ
ITM= 16A tp= 380 s
°
VTM
IDRM
IRRM
dV/dt
Tj= 25 C
1.6
10
2
VDRM Rated
VRRM Rated
°
µ
A
Tj= 25 C
Tj = 125°C MAX
mA
°
µ
V/ s
Linear slope up to
VD=67%VDRM Gate open
Tj= 125 C MIN
50
150
ORDERING INFORMATION
TN 8 05 - 600 B
PACKAGES :
B: DPAK
SCR
CURRENT
VDRM / VRRM
SENSITIVITY
2/5
TN805/815-B
Fig. 1:
Fig. 2 :
Correlation between maximum average
Maximum average power dissipation ver-
t
sus average on-state current .
power dissipation and maximum allowable em-
peratures (Tamb and Tcase) for different thermal
resistances heatsink+contact.
P(W)
P(W)
Tcase (°C)
8
α = 180°
8
7
6
5
4
3
2
1
0
α = 120°
α = 90°
7
6
5
4
3
2
1
0
105
110
115
120
D.C.
α = 180°
Rth=0°C/W
α = 60°
α = 30°
Rth=37°C/W
360°
Tamb(°C)
10 20 30 40 50 60 70 80 90 100 110 120 130
IT(av)(A)
α
125
0
0
1
2
3
4
5
6
7
Fig. 3-1:
Fig. 3-2:
Average and D.C. on-state current versus
case temperature.
Average and D.C. on-state current versus
case temperature.
IT(av)(A)
IT(av)(A)
10
2.0
D.C.
1.8
D.C.
1.6
8
6
4
2
0
1.4
1.2
α = 180°
α = 180°
1.0
0.8
0.6
0.4
0.2
0.0
Tamb(°C)
10 20 30 40 50 60 70 80 90 100 110 120 130
Tcase(°C)
10 20 30 40 50 60 70 80 90 100 110 120 130
0
0
Fig. 4-1:
versus pulse duration.
Fig. 4-2:
Relative variation of thermal impedance
versus pulse duration.
Relative variation of thermal impedance
K=[Zth(j-c)/Rth(j-c)]
K=[Zth(j-a)/Rth(j-a)]
1.0
1.00
0.5
0.10
0.01
0.2
0.1
tp(s)
tp(s)
1E+0
1E-3
1E-2
1E-1
1E+0
1E-2
1E-1
1E+1
1E+2 5E+2
3/5
TN805/TN815-B
Fig. 5:
Fig. 6:
Non repetitive surge peak on-state current
versus number of cycles.
Relative variation of gate trigger current and
holding current versus junction temperature.
Igt,IH[Tj]/Ig,IH[Tj=25°C]
ITSM(A)
80
2.0
Tj initial=25°C
F=50Hz
1.8
1.6
1.4
70
60
50
40
30
20
10
Igt
1.2
IH
1.0
0.8
0.6
0.4
0.2
Number of cycles
10 100
Tj(°C)
0.0
0
-40
-20
0
20
40
60
80
100 120
1
1000
Fig. 8:
Fig. 7:
On-state characteristics (maximum values).
Non repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and cor-
responding value of I2t.
ITM(A)
ITSM(A),I²t(A²s)
100.0
10.0
1.0
300
Tj initial=25°C
ITSM
Tj max.:
Vto=0.85V
Rt=46m
100
Tj=Tj max.
50
Tj=25°C
I²t
20
tp(ms)
VTM(V)
10
0.1
1
2
5
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 9:
Thermal resistance junction to ambient ver-
sus copper surface under tab (Epoxy printed circuit
board FR4, copper thickness: 35 m).
µ
Rth(j-a) (°C/W)
100
80
60
40
20
S(Cu) (cm²)
0
0
2
4
6
8
10 12
14
16 18
20
4/5
TN805/815-B
PACKAGE MECHANICAL DATA
DPAK
DIMENSIONS
Millimeters Inches
Min. Typ. Max Min. Typ. Max.
REF.
A
2.20
2.40 0.086
1.10 0.035
0.23 0.001
0.90 0.025
5.40 0.204
0.60 0.017
0.60 0.018
6.20 0.236
6.60 0.251
4.60 0.173
10.10 0.368
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.259
0.181
0.397
A1 0.90
A2 0.03
B
0.64
B2 5.20
0.45
C2 0.48
C
D
E
6.00
6.40
4.40
9.35
G
H
L2
0.80
0.031
L4 0.60
1.00 0.023
0.039
8°
V2
0°
8°
0°
WEIGHT :
MARKING
0.30g
FOOT PRINT DIMENSIONS
(in millimeters)
6.7
TYPE
MARKING
6.7
TN8
05x0
T805- x00B
6.7
3
TN8
15x0
T815-x00B
1.6
1.6
2.3 2.3
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