TXN612 [STMICROELECTRONICS]
HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY; 高浪涌能力高通态电流高稳定性和可靠性型号: | TXN612 |
厂家: | ST |
描述: | HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY |
文件: | 总5页 (文件大小:73K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TXN/TYN 0512 --->
TXN/TYN 1012
SCR
FEATURES
.
.
.
.
HIGH SURGE CAPABILITY
HIGH ON-STATE CURRENT
HIGH STABILITY AND RELIABILITY
TXN Serie :
INSULATED VOLTAGE = 2500V
(UL RECOGNIZED : E81734)
(RMS)
DESCRIPTION
The TYN/TXN 0512 ---> TYN/TXN 1012 Family
of Silicon Controlled Rectifiers uses a high per-
formance glass passivated technology.
G
A
K
This general purpose Family of Silicon Controlled
Rectifiers is designed for power supplies up to
400Hz on resistive or inductive load.
TO220AB
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
I
RMS on-state current
(180° conduction angle)
TXN
TYN
Tc=80°C
Tc=90°C
12
A
T(RMS)
I
Average on-state current
(180° conduction angle,single phase circuit)
TXN
TYN
Tc=80°C
Tc=90°C
8
A
A
T(AV)
I
Non repetitive surge peak on-state current
( Tj initial = 25°C )
tp=8.3 ms
tp=10 ms
tp=10 ms
125
120
72
TSM
2
I t
2
2
A s
I t value
dI/dt
Critical rate of rise of on-state current
100
A/µs
Gate supply : I = 100 mA di /dt = 1 A/µs
G
G
Tstg
Tj
Storage and operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
°C
Tl
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
260
°C
Symbol
Parameter
TYN/TXN
Unit
0512
112
212
412
612
600
812
1012
1000
V
V
Repetitive peak off-state voltage
Tj = 125 °C
50
100
200
400
800
V
DRM
RRM
1/5
April 1995
TXN/TYN 0512 ---> TXN/TYN 1012
THERMAL RESISTANCES
Symbol
Parameter
Value
60
Unit
°C/W
°C/W
Rth (j-a)
Junction to ambient
Rth (j-c) DC Junction to case for DC
TXN
TYN
3.5
2.5
GATE CHARACTERISTICS (maximum values)
P
= 1W
P
GM
= 10W (tp = 20 µs)
I
= 4A (tp = 20 µs)
V
RGM
= 5 V.
G (AV)
FGM
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
V =12V (DC) R =33Ω
Value
15
Unit
mA
V
I
Tj=25°C
Tj=25°C
Tj= 125°C
Tj=25°C
MAX
GT
D
L
V
V =12V (DC) R =33Ω
MAX
MIN
TYP
1.5
0.2
2
GT
GD
D
L
V
V =V
R =3.3kΩ
V
D
DRM
DRM
L
tgt
V =V
I
= 40mA
µs
D
G
dI /dt = 0.5A/µs
G
I
I = 1.2 I
GT
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj= 125°C
Tj= 125°C
TYP
MAX
MAX
MAX
50
30
mA
mA
V
L
G
I
I = 100mA gate open
T
H
V
ITM= 24A tp= 380µs
1.6
0.01
3
TM
I
I
V
Rated
Rated
mA
DRM
RRM
DRM
V
RRM
dV/dt
tq
Linear slope up to V =67%V
D
gate open
MIN
TYP
200
V/µs
µs
DRM
V =67%V
dI /dt=30 A/µs
TM
I
= 24A V = 25V
Tj= 125°C
70
D
DRM
TM
R
dV /dt= 50V/µs
D
2/5
TXN/TYN 0512 ---> TXN/TYN 1012
Fig.1 : Maximum average power dissipation versus
Fig.2 : Correlation between maximum average power
average on-state current (TXN).
dissipation and maximum allowable temperatures (T
amb
for different thermal resistances heatsink +
contact (TXN).
and T
)
case
Fig.3 : Maximum average power dissipation versus
average on-state current (TYN).
Fig.4 : Correlation between maximum average power
dissipation and maximum allowable temperatures (T
amb
for different thermal resistances heatsink +
contact (TYN).
and T
)
case
Fig.5
:
Average on-state current versus case
Fig.6
:
Average on-state current versus case
temperature (TXN).
temperature (TYN).
3/5
TXN/TYN 0512 ---> TXN/TYN 1012
Fig.7 : Relative variation of thermal impedance versus
Fig.8 : Relative variation of gate trigger current versus
pulse duration.
junction temperature.
Zth/Rth
1
Zth(j-c)
0.1
Zth(j-a)
tp(s)
1E+2 5E+2
0.01
1E-3
1E-2
1E-1
1E+0
1E+1
Fig.9 : Non repetitive surge peak on-state current
Fig.10 : Non repetitive surge peak on-state current for
versus number of cycles.
a sinusoidal pulse with width : t ≤ 10 ms, and
corresponding value of I t.
2
Fig.11 : On-state characteristics (maximum values).
4/5
TXN/TYN 0512 ---> TXN/TYN 1012
PACKAGE MECHANICAL DATA
TO220AB Plastic
REF.
DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A
H
G
A
B
C
D
F
G
H
I
J
L
M
N
O
P
10.00 10.40 0.393 0.409
15.20 15.90 0.598 0.625
13.00 14.00 0.511 0.551
J
I
D
B
C
6.20
3.50
2.65
4.40
3.75
1.23
0.49
2.40
4.80
1.14
0.61
6.60 0.244 0.259
4.20 0.137 0.165
2.95 0.104 0.116
4.60 0.173 0.181
3.85 0.147 0.151
1.32 0.048 0.051
0.70 0.019 0.027
2.72 0.094 0.107
5.40 0.188 0.212
1.70 0.044 0.066
0.88 0.024 0.034
F
L
O
P
M
= N =
Cooling method : by conduction (method C)
Marking : type number
Weight : 2.3 g
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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